SG107645A1 - Electrostatic discharge protection silicon controlled rectifier (esd-scr) for silicon germanium technologies - Google Patents

Electrostatic discharge protection silicon controlled rectifier (esd-scr) for silicon germanium technologies

Info

Publication number
SG107645A1
SG107645A1 SG200301628A SG200301628A SG107645A1 SG 107645 A1 SG107645 A1 SG 107645A1 SG 200301628 A SG200301628 A SG 200301628A SG 200301628 A SG200301628 A SG 200301628A SG 107645 A1 SG107645 A1 SG 107645A1
Authority
SG
Singapore
Prior art keywords
esd
scr
electrostatic discharge
controlled rectifier
discharge protection
Prior art date
Application number
SG200301628A
Inventor
Christian Buss Cornelius
Paul Josef Mergens Markus
Armer John
Czeslaw Jozwiak Philip
Original Assignee
Sarnoff Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/238,699 external-priority patent/US6770918B2/en
Application filed by Sarnoff Corp filed Critical Sarnoff Corp
Publication of SG107645A1 publication Critical patent/SG107645A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0259—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using bipolar transistors as protective elements
    • H01L27/0262—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using bipolar transistors as protective elements including a PNP transistor and a NPN transistor, wherein each of said transistors has its base coupled to the collector of the other transistor, e.g. silicon controlled rectifier [SCR] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
SG200301628A 2002-09-10 2003-03-13 Electrostatic discharge protection silicon controlled rectifier (esd-scr) for silicon germanium technologies SG107645A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/238,699 US6770918B2 (en) 2001-09-11 2002-09-10 Electrostatic discharge protection silicon controlled rectifier (ESD-SCR) for silicon germanium technologies
EP02256293A EP1294025A3 (en) 2001-09-11 2002-09-11 Scr electrostatic discharge protection for integrated circuits

Publications (1)

Publication Number Publication Date
SG107645A1 true SG107645A1 (en) 2004-12-29

Family

ID=34196103

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200301628A SG107645A1 (en) 2002-09-10 2003-03-13 Electrostatic discharge protection silicon controlled rectifier (esd-scr) for silicon germanium technologies

Country Status (3)

Country Link
KR (1) KR20040023477A (en)
CN (1) CN1482680A (en)
SG (1) SG107645A1 (en)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101771043B (en) * 2010-01-19 2011-07-20 浙江大学 Complementary SCR structure triggered with assistance of Zener diode
CN102130155B (en) * 2010-01-20 2012-11-07 上海华虹Nec电子有限公司 Manufacturing method of silicon control rectifier structure
JP5708660B2 (en) * 2010-12-06 2015-04-30 富士電機株式会社 Semiconductor device
US8642452B2 (en) * 2011-01-24 2014-02-04 International Business Machines Corporation Semiconductor-on-insulator device with asymmetric structure
CN103165681B (en) * 2011-12-09 2015-12-02 上海华虹宏力半导体制造有限公司 Clamp diode and manufacture method thereof
US8551841B2 (en) * 2012-01-06 2013-10-08 Taiwan Semiconductor Manufacturing Company, Ltd. IO ESD device and methods for forming the same
CN103247616B (en) * 2012-02-14 2017-03-01 联华电子股份有限公司 Electrostatic discharge protective equipment
CN104241265B (en) * 2013-06-09 2017-05-17 中芯国际集成电路制造(上海)有限公司 Electrostatic discharge protection structure
US9412879B2 (en) 2013-07-18 2016-08-09 Texas Instruments Incorporated Integration of the silicon IMPATT diode in an analog technology
US9515177B2 (en) 2014-11-25 2016-12-06 Infineon Technologies Ag Vertically integrated semiconductor device and manufacturing method
CN106206565B (en) * 2015-05-08 2019-04-23 创意电子股份有限公司 Diode and diode string circuit
CN106298966B (en) * 2015-05-25 2020-05-12 中芯国际集成电路制造(上海)有限公司 Semiconductor device, method of manufacturing the same, and electronic apparatus
KR101666753B1 (en) * 2015-06-18 2016-10-14 주식회사 동부하이텍 Semiconductor device and radio frequency module formed on high resistivity substrate
US9633993B1 (en) * 2016-04-01 2017-04-25 Texas Instruments Incorporated Bipolar SCR
KR102398686B1 (en) * 2016-09-19 2022-05-16 주식회사 디비하이텍 Device for protecting ESD
CN107180858B (en) * 2017-05-22 2019-10-29 富芯微电子有限公司 A kind of silicon-controlled and its manufacturing method using heterojunction structure
CN109755174B (en) * 2019-01-23 2021-04-02 上海华虹宏力半导体制造有限公司 Deep trench isolation method for BCD device
US11018230B1 (en) * 2019-12-20 2021-05-25 Nxp B.V. Semiconductor devices with a mixed crystal region
CN115295531B (en) * 2022-10-09 2023-02-03 中芯越州集成电路制造(绍兴)有限公司 HBT device and protection circuit integrated structure and preparation method thereof

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6304127B1 (en) * 1998-07-30 2001-10-16 Winbond Electronics Corp. Negative-voltage-trigger SCR with a stack-gate ESD transient switch
US6323074B1 (en) * 2000-04-24 2001-11-27 Taiwan Semiconductor Manufacturing Company High voltage ESD protection device with very low snapback voltage by adding as a p+ diffusion and n-well to the NMOS drain
US20020050615A1 (en) * 2000-10-27 2002-05-02 Ming-Dou Ker Low-voltage-triggered electrostatic discharge protection device and relevant circuitry

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6304127B1 (en) * 1998-07-30 2001-10-16 Winbond Electronics Corp. Negative-voltage-trigger SCR with a stack-gate ESD transient switch
US6323074B1 (en) * 2000-04-24 2001-11-27 Taiwan Semiconductor Manufacturing Company High voltage ESD protection device with very low snapback voltage by adding as a p+ diffusion and n-well to the NMOS drain
US20020050615A1 (en) * 2000-10-27 2002-05-02 Ming-Dou Ker Low-voltage-triggered electrostatic discharge protection device and relevant circuitry

Also Published As

Publication number Publication date
KR20040023477A (en) 2004-03-18
CN1482680A (en) 2004-03-17

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