JP2016526800A5 - - Google Patents
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- Publication number
- JP2016526800A5 JP2016526800A5 JP2016524356A JP2016524356A JP2016526800A5 JP 2016526800 A5 JP2016526800 A5 JP 2016526800A5 JP 2016524356 A JP2016524356 A JP 2016524356A JP 2016524356 A JP2016524356 A JP 2016524356A JP 2016526800 A5 JP2016526800 A5 JP 2016526800A5
- Authority
- JP
- Japan
- Prior art keywords
- enclosure
- trench
- semiconductor surface
- bipolar transistor
- top side
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims 14
- 238000009792 diffusion process Methods 0.000 claims 6
- 229910052710 silicon Inorganic materials 0.000 claims 6
- 239000010703 silicon Substances 0.000 claims 6
- 239000000758 substrate Substances 0.000 claims 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims 2
- 229910052732 germanium Inorganic materials 0.000 claims 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims 2
- 229910052698 phosphorus Inorganic materials 0.000 claims 2
- 239000011574 phosphorus Substances 0.000 claims 2
- 230000001681 protective effect Effects 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/933,910 US9006833B2 (en) | 2013-07-02 | 2013-07-02 | Bipolar transistor having sinker diffusion under a trench |
| US13/933,910 | 2013-07-02 | ||
| PCT/US2014/045326 WO2015003102A1 (en) | 2013-07-02 | 2014-07-02 | Bipolar transistor having sinker diffusion under a trench |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2016526800A JP2016526800A (ja) | 2016-09-05 |
| JP2016526800A5 true JP2016526800A5 (enExample) | 2017-07-27 |
Family
ID=52132232
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016524356A Pending JP2016526800A (ja) | 2013-07-02 | 2014-07-02 | トレンチの下にシンカー拡散を有するバイポーラトランジスタ |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US9006833B2 (enExample) |
| EP (1) | EP3017477A4 (enExample) |
| JP (1) | JP2016526800A (enExample) |
| CN (1) | CN105393358A (enExample) |
| WO (1) | WO2015003102A1 (enExample) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10700055B2 (en) | 2017-12-12 | 2020-06-30 | Texas Instruments Incorporated | Back ballasted vertical NPN transistor |
| US11374124B2 (en) | 2018-06-28 | 2022-06-28 | Texas Instruments Incorporated | Protection of drain extended transistor field oxide |
| US11152505B2 (en) | 2018-06-28 | 2021-10-19 | Texas Instruments Incorporated | Drain extended transistor |
| US10461182B1 (en) | 2018-06-28 | 2019-10-29 | Texas Instruments Incorporated | Drain centered LDMOS transistor with integrated dummy patterns |
| GB2623027B (en) * | 2021-08-10 | 2024-09-25 | Ideal Power Inc | System and method for bi-directional trench power switches |
| CN116110903B (zh) * | 2023-02-14 | 2025-09-09 | 江苏庆延微电子有限公司 | 高鲁棒性防静电浪涌衬底型esd/tvs管结构及方法 |
Family Cites Families (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4494134A (en) * | 1982-07-01 | 1985-01-15 | General Electric Company | High voltage semiconductor devices comprising integral JFET |
| RU1098456C (ru) * | 1982-10-18 | 1993-03-07 | Организация П/Я М-5222 | Способ изготовлени интегральных схем |
| US4929996A (en) | 1988-06-29 | 1990-05-29 | Texas Instruments Incorporated | Trench bipolar transistor |
| US5057443A (en) * | 1988-06-29 | 1991-10-15 | Texas Instruments Incorporated | Method for fabricating a trench bipolar transistor |
| RU1699313C (ru) * | 1990-01-08 | 1994-03-30 | Глущенко Виктор Николаевич | Полупроводниковая структура |
| US5747834A (en) * | 1995-09-29 | 1998-05-05 | Texas Instruments Inc | Adjustable Bipolar SCR holding voltage for ESD protection circuits in high speed Bipolar/BiCMOS circuits |
| US5850095A (en) * | 1996-09-24 | 1998-12-15 | Texas Instruments Incorporated | ESD protection circuit using zener diode and interdigitated NPN transistor |
| RU2111578C1 (ru) * | 1997-05-13 | 1998-05-20 | Научно-производственный комплекс "Технологический центр" Московского института электронной техники | Комплементарная биполярная транзисторная структура интегральной схемы |
| US6140196A (en) * | 1998-12-02 | 2000-10-31 | United Microelectronics Corp. | Method of fabricating high power bipolar junction transistor |
| JP2003086599A (ja) * | 2001-09-10 | 2003-03-20 | Rohm Co Ltd | バイポーラトランジスタ及びその製造方法 |
| JP4342142B2 (ja) * | 2002-03-22 | 2009-10-14 | 富士通マイクロエレクトロニクス株式会社 | 半導体受光素子 |
| US6943426B2 (en) * | 2002-08-14 | 2005-09-13 | Advanced Analogic Technologies, Inc. | Complementary analog bipolar transistors with trench-constrained isolation diffusion |
| JP2006108249A (ja) * | 2004-10-01 | 2006-04-20 | Sharp Corp | 半導体装置及びその製造方法 |
| US20060076629A1 (en) * | 2004-10-07 | 2006-04-13 | Hamza Yilmaz | Semiconductor devices with isolation and sinker regions containing trenches filled with conductive material |
| US20080087978A1 (en) * | 2006-10-11 | 2008-04-17 | Coolbaugh Douglas D | Semiconductor structure and method of manufacture |
| JP2008159675A (ja) * | 2006-12-21 | 2008-07-10 | Sanyo Electric Co Ltd | 半導体装置及びその製造方法 |
| US7737526B2 (en) * | 2007-03-28 | 2010-06-15 | Advanced Analogic Technologies, Inc. | Isolated trench MOSFET in epi-less semiconductor sustrate |
| US20080316659A1 (en) * | 2007-06-19 | 2008-12-25 | Ismail Hakki Oguzman | High voltage esd protection featuring pnp bipolar junction transistor |
| CN102231379B (zh) * | 2009-12-21 | 2013-03-13 | 上海华虹Nec电子有限公司 | SiGe异质结双极晶体管多指结构 |
| CN102117795B (zh) * | 2009-12-31 | 2012-09-05 | 上海华虹Nec电子有限公司 | 场氧化隔离工艺中的电极引出结构 |
| US8735289B2 (en) * | 2010-11-29 | 2014-05-27 | Infineon Technologies Ag | Method of contacting a doping region in a semiconductor substrate |
-
2013
- 2013-07-02 US US13/933,910 patent/US9006833B2/en active Active
-
2014
- 2014-07-02 WO PCT/US2014/045326 patent/WO2015003102A1/en not_active Ceased
- 2014-07-02 EP EP14819416.0A patent/EP3017477A4/en not_active Withdrawn
- 2014-07-02 CN CN201480037806.6A patent/CN105393358A/zh active Pending
- 2014-07-02 JP JP2016524356A patent/JP2016526800A/ja active Pending
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