CN105393358A - 在沟槽下方具有沉块扩散区的双极晶体管 - Google Patents

在沟槽下方具有沉块扩散区的双极晶体管 Download PDF

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Publication number
CN105393358A
CN105393358A CN201480037806.6A CN201480037806A CN105393358A CN 105393358 A CN105393358 A CN 105393358A CN 201480037806 A CN201480037806 A CN 201480037806A CN 105393358 A CN105393358 A CN 105393358A
Authority
CN
China
Prior art keywords
trench
package
semiconductor surface
transistor
base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201480037806.6A
Other languages
English (en)
Chinese (zh)
Inventor
H·L·爱德华兹
A·A·萨尔曼
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of CN105393358A publication Critical patent/CN105393358A/zh
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/40—Vertical BJTs
    • H10D10/421—Vertical BJTs having both emitter-base and base-collector junctions ending at the same surface of the body
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/40—Vertical BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/80—Heterojunction BJTs
    • H10D10/821—Vertical heterojunction BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/115—Dielectric isolations, e.g. air gaps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/137—Collector regions of BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/711—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using bipolar transistors as protective elements

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
CN201480037806.6A 2013-07-02 2014-07-02 在沟槽下方具有沉块扩散区的双极晶体管 Pending CN105393358A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/933,910 US9006833B2 (en) 2013-07-02 2013-07-02 Bipolar transistor having sinker diffusion under a trench
US13/933,910 2013-07-02
PCT/US2014/045326 WO2015003102A1 (en) 2013-07-02 2014-07-02 Bipolar transistor having sinker diffusion under a trench

Publications (1)

Publication Number Publication Date
CN105393358A true CN105393358A (zh) 2016-03-09

Family

ID=52132232

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201480037806.6A Pending CN105393358A (zh) 2013-07-02 2014-07-02 在沟槽下方具有沉块扩散区的双极晶体管

Country Status (5)

Country Link
US (1) US9006833B2 (enExample)
EP (1) EP3017477A4 (enExample)
JP (1) JP2016526800A (enExample)
CN (1) CN105393358A (enExample)
WO (1) WO2015003102A1 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10700055B2 (en) 2017-12-12 2020-06-30 Texas Instruments Incorporated Back ballasted vertical NPN transistor
US11374124B2 (en) 2018-06-28 2022-06-28 Texas Instruments Incorporated Protection of drain extended transistor field oxide
US11152505B2 (en) 2018-06-28 2021-10-19 Texas Instruments Incorporated Drain extended transistor
US10461182B1 (en) 2018-06-28 2019-10-29 Texas Instruments Incorporated Drain centered LDMOS transistor with integrated dummy patterns
GB2623027B (en) * 2021-08-10 2024-09-25 Ideal Power Inc System and method for bi-directional trench power switches
CN116110903B (zh) * 2023-02-14 2025-09-09 江苏庆延微电子有限公司 高鲁棒性防静电浪涌衬底型esd/tvs管结构及方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1447445A (zh) * 2002-03-22 2003-10-08 富士通株式会社 在杂质扩散区之间具有减小的寄生电容的半导体器件
CN1698208A (zh) * 2002-08-14 2005-11-16 先进模拟科技公司 具有槽限制的隔离扩散的互补模拟双极型晶体管
US20080087978A1 (en) * 2006-10-11 2008-04-17 Coolbaugh Douglas D Semiconductor structure and method of manufacture
CN101730934A (zh) * 2007-03-28 2010-06-09 先进模拟科技公司 被隔离的集成电路器件

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Publication number Priority date Publication date Assignee Title
US4494134A (en) * 1982-07-01 1985-01-15 General Electric Company High voltage semiconductor devices comprising integral JFET
RU1098456C (ru) * 1982-10-18 1993-03-07 Организация П/Я М-5222 Способ изготовлени интегральных схем
US4929996A (en) 1988-06-29 1990-05-29 Texas Instruments Incorporated Trench bipolar transistor
US5057443A (en) * 1988-06-29 1991-10-15 Texas Instruments Incorporated Method for fabricating a trench bipolar transistor
RU1699313C (ru) * 1990-01-08 1994-03-30 Глущенко Виктор Николаевич Полупроводниковая структура
US5747834A (en) * 1995-09-29 1998-05-05 Texas Instruments Inc Adjustable Bipolar SCR holding voltage for ESD protection circuits in high speed Bipolar/BiCMOS circuits
US5850095A (en) * 1996-09-24 1998-12-15 Texas Instruments Incorporated ESD protection circuit using zener diode and interdigitated NPN transistor
RU2111578C1 (ru) * 1997-05-13 1998-05-20 Научно-производственный комплекс "Технологический центр" Московского института электронной техники Комплементарная биполярная транзисторная структура интегральной схемы
US6140196A (en) * 1998-12-02 2000-10-31 United Microelectronics Corp. Method of fabricating high power bipolar junction transistor
JP2003086599A (ja) * 2001-09-10 2003-03-20 Rohm Co Ltd バイポーラトランジスタ及びその製造方法
JP2006108249A (ja) * 2004-10-01 2006-04-20 Sharp Corp 半導体装置及びその製造方法
US20060076629A1 (en) * 2004-10-07 2006-04-13 Hamza Yilmaz Semiconductor devices with isolation and sinker regions containing trenches filled with conductive material
JP2008159675A (ja) * 2006-12-21 2008-07-10 Sanyo Electric Co Ltd 半導体装置及びその製造方法
US20080316659A1 (en) * 2007-06-19 2008-12-25 Ismail Hakki Oguzman High voltage esd protection featuring pnp bipolar junction transistor
CN102231379B (zh) * 2009-12-21 2013-03-13 上海华虹Nec电子有限公司 SiGe异质结双极晶体管多指结构
CN102117795B (zh) * 2009-12-31 2012-09-05 上海华虹Nec电子有限公司 场氧化隔离工艺中的电极引出结构
US8735289B2 (en) * 2010-11-29 2014-05-27 Infineon Technologies Ag Method of contacting a doping region in a semiconductor substrate

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1447445A (zh) * 2002-03-22 2003-10-08 富士通株式会社 在杂质扩散区之间具有减小的寄生电容的半导体器件
CN1698208A (zh) * 2002-08-14 2005-11-16 先进模拟科技公司 具有槽限制的隔离扩散的互补模拟双极型晶体管
US20080087978A1 (en) * 2006-10-11 2008-04-17 Coolbaugh Douglas D Semiconductor structure and method of manufacture
CN101730934A (zh) * 2007-03-28 2010-06-09 先进模拟科技公司 被隔离的集成电路器件

Also Published As

Publication number Publication date
US20150008561A1 (en) 2015-01-08
US9006833B2 (en) 2015-04-14
JP2016526800A (ja) 2016-09-05
WO2015003102A1 (en) 2015-01-08
EP3017477A4 (en) 2017-03-01
EP3017477A1 (en) 2016-05-11

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SE01 Entry into force of request for substantive examination
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Application publication date: 20160309