JP2016526800A - トレンチの下にシンカー拡散を有するバイポーラトランジスタ - Google Patents

トレンチの下にシンカー拡散を有するバイポーラトランジスタ Download PDF

Info

Publication number
JP2016526800A
JP2016526800A JP2016524356A JP2016524356A JP2016526800A JP 2016526800 A JP2016526800 A JP 2016526800A JP 2016524356 A JP2016524356 A JP 2016524356A JP 2016524356 A JP2016524356 A JP 2016524356A JP 2016526800 A JP2016526800 A JP 2016526800A
Authority
JP
Japan
Prior art keywords
trench
enclosure
bipolar transistor
semiconductor surface
base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2016524356A
Other languages
English (en)
Japanese (ja)
Other versions
JP2016526800A5 (enExample
Inventor
リッツマン エドワーズ ヘンリー
リッツマン エドワーズ ヘンリー
エイ サルマン アクラム
エイ サルマン アクラム
Original Assignee
日本テキサス・インスツルメンツ株式会社
テキサス インスツルメンツ インコーポレイテッド
テキサス インスツルメンツ インコーポレイテッド
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日本テキサス・インスツルメンツ株式会社, テキサス インスツルメンツ インコーポレイテッド, テキサス インスツルメンツ インコーポレイテッド filed Critical 日本テキサス・インスツルメンツ株式会社
Publication of JP2016526800A publication Critical patent/JP2016526800A/ja
Publication of JP2016526800A5 publication Critical patent/JP2016526800A5/ja
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/40—Vertical BJTs
    • H10D10/421—Vertical BJTs having both emitter-base and base-collector junctions ending at the same surface of the body
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/40—Vertical BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/80—Heterojunction BJTs
    • H10D10/821—Vertical heterojunction BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/115—Dielectric isolations, e.g. air gaps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/137—Collector regions of BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/711—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using bipolar transistors as protective elements

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
JP2016524356A 2013-07-02 2014-07-02 トレンチの下にシンカー拡散を有するバイポーラトランジスタ Pending JP2016526800A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/933,910 US9006833B2 (en) 2013-07-02 2013-07-02 Bipolar transistor having sinker diffusion under a trench
US13/933,910 2013-07-02
PCT/US2014/045326 WO2015003102A1 (en) 2013-07-02 2014-07-02 Bipolar transistor having sinker diffusion under a trench

Publications (2)

Publication Number Publication Date
JP2016526800A true JP2016526800A (ja) 2016-09-05
JP2016526800A5 JP2016526800A5 (enExample) 2017-07-27

Family

ID=52132232

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016524356A Pending JP2016526800A (ja) 2013-07-02 2014-07-02 トレンチの下にシンカー拡散を有するバイポーラトランジスタ

Country Status (5)

Country Link
US (1) US9006833B2 (enExample)
EP (1) EP3017477A4 (enExample)
JP (1) JP2016526800A (enExample)
CN (1) CN105393358A (enExample)
WO (1) WO2015003102A1 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10700055B2 (en) 2017-12-12 2020-06-30 Texas Instruments Incorporated Back ballasted vertical NPN transistor
US11374124B2 (en) 2018-06-28 2022-06-28 Texas Instruments Incorporated Protection of drain extended transistor field oxide
US11152505B2 (en) 2018-06-28 2021-10-19 Texas Instruments Incorporated Drain extended transistor
US10461182B1 (en) 2018-06-28 2019-10-29 Texas Instruments Incorporated Drain centered LDMOS transistor with integrated dummy patterns
GB2623027B (en) * 2021-08-10 2024-09-25 Ideal Power Inc System and method for bi-directional trench power switches
CN116110903B (zh) * 2023-02-14 2025-09-09 江苏庆延微电子有限公司 高鲁棒性防静电浪涌衬底型esd/tvs管结构及方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003086599A (ja) * 2001-09-10 2003-03-20 Rohm Co Ltd バイポーラトランジスタ及びその製造方法
US20060076629A1 (en) * 2004-10-07 2006-04-13 Hamza Yilmaz Semiconductor devices with isolation and sinker regions containing trenches filled with conductive material
JP2006108249A (ja) * 2004-10-01 2006-04-20 Sharp Corp 半導体装置及びその製造方法
JP2008159675A (ja) * 2006-12-21 2008-07-10 Sanyo Electric Co Ltd 半導体装置及びその製造方法
JP2010522986A (ja) * 2007-03-28 2010-07-08 アドバンスト・アナロジック・テクノロジーズ・インコーポレイテッド 絶縁分離された集積回路装置

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4494134A (en) * 1982-07-01 1985-01-15 General Electric Company High voltage semiconductor devices comprising integral JFET
RU1098456C (ru) * 1982-10-18 1993-03-07 Организация П/Я М-5222 Способ изготовлени интегральных схем
US4929996A (en) 1988-06-29 1990-05-29 Texas Instruments Incorporated Trench bipolar transistor
US5057443A (en) * 1988-06-29 1991-10-15 Texas Instruments Incorporated Method for fabricating a trench bipolar transistor
RU1699313C (ru) * 1990-01-08 1994-03-30 Глущенко Виктор Николаевич Полупроводниковая структура
US5747834A (en) * 1995-09-29 1998-05-05 Texas Instruments Inc Adjustable Bipolar SCR holding voltage for ESD protection circuits in high speed Bipolar/BiCMOS circuits
US5850095A (en) * 1996-09-24 1998-12-15 Texas Instruments Incorporated ESD protection circuit using zener diode and interdigitated NPN transistor
RU2111578C1 (ru) * 1997-05-13 1998-05-20 Научно-производственный комплекс "Технологический центр" Московского института электронной техники Комплементарная биполярная транзисторная структура интегральной схемы
US6140196A (en) * 1998-12-02 2000-10-31 United Microelectronics Corp. Method of fabricating high power bipolar junction transistor
JP4342142B2 (ja) * 2002-03-22 2009-10-14 富士通マイクロエレクトロニクス株式会社 半導体受光素子
US6943426B2 (en) * 2002-08-14 2005-09-13 Advanced Analogic Technologies, Inc. Complementary analog bipolar transistors with trench-constrained isolation diffusion
US20080087978A1 (en) * 2006-10-11 2008-04-17 Coolbaugh Douglas D Semiconductor structure and method of manufacture
US20080316659A1 (en) * 2007-06-19 2008-12-25 Ismail Hakki Oguzman High voltage esd protection featuring pnp bipolar junction transistor
CN102231379B (zh) * 2009-12-21 2013-03-13 上海华虹Nec电子有限公司 SiGe异质结双极晶体管多指结构
CN102117795B (zh) * 2009-12-31 2012-09-05 上海华虹Nec电子有限公司 场氧化隔离工艺中的电极引出结构
US8735289B2 (en) * 2010-11-29 2014-05-27 Infineon Technologies Ag Method of contacting a doping region in a semiconductor substrate

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003086599A (ja) * 2001-09-10 2003-03-20 Rohm Co Ltd バイポーラトランジスタ及びその製造方法
JP2006108249A (ja) * 2004-10-01 2006-04-20 Sharp Corp 半導体装置及びその製造方法
US20060076629A1 (en) * 2004-10-07 2006-04-13 Hamza Yilmaz Semiconductor devices with isolation and sinker regions containing trenches filled with conductive material
JP2008159675A (ja) * 2006-12-21 2008-07-10 Sanyo Electric Co Ltd 半導体装置及びその製造方法
JP2010522986A (ja) * 2007-03-28 2010-07-08 アドバンスト・アナロジック・テクノロジーズ・インコーポレイテッド 絶縁分離された集積回路装置

Also Published As

Publication number Publication date
US20150008561A1 (en) 2015-01-08
US9006833B2 (en) 2015-04-14
WO2015003102A1 (en) 2015-01-08
EP3017477A4 (en) 2017-03-01
CN105393358A (zh) 2016-03-09
EP3017477A1 (en) 2016-05-11

Similar Documents

Publication Publication Date Title
US12205944B2 (en) Isolation structure for IC with epi regions sharing the same tank
US8981483B2 (en) ESD protection structure and ESD protection circuit
US9231403B2 (en) ESD protection circuit with plural avalanche diodes
US8692289B2 (en) Fast turn on silicon controlled rectifiers for ESD protection
US9397085B2 (en) Bi-directional ESD protection device
JP6607917B2 (ja) セグメント化ｎｐｎ垂直バイポーラトランジスタ
EP0745275A1 (en) Diode device to protect metal-oxide-metal capacitors
CN104218077A (zh) Esd晶体管
JP2016526800A (ja) トレンチの下にシンカー拡散を有するバイポーラトランジスタ
US8598625B2 (en) ESD protection device with tunable design windows
US11894362B2 (en) PNP controlled ESD protection device with high holding voltage and snapback
US10269898B2 (en) Surrounded emitter bipolar device
US9960251B2 (en) ESD protection structure and method of fabrication thereof
KR20160029216A (ko) 정전기 방전 보호 소자
US9153570B2 (en) ESD tolerant I/O pad circuit including a surrounding well
JP2012114401A (ja) 半導体装置およびその製造方法
JP2014038922A (ja) 半導体装置
US12027612B2 (en) SCR having selective well contacts
US8916935B2 (en) ESD clamp in integrated circuits
US9793258B1 (en) Electrostatic discharge device
KR20170121906A (ko) 바이폴라 접합 트랜지스터 및 이의 제조 방법
JP2011103474A (ja) 半導体装置

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A821

Effective date: 20151228

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20170619

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20170619

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20180313

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20180320

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20180614

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20181114

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20190212

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20190710