JP2019511113A5 - - Google Patents

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Publication number
JP2019511113A5
JP2019511113A5 JP2018546551A JP2018546551A JP2019511113A5 JP 2019511113 A5 JP2019511113 A5 JP 2019511113A5 JP 2018546551 A JP2018546551 A JP 2018546551A JP 2018546551 A JP2018546551 A JP 2018546551A JP 2019511113 A5 JP2019511113 A5 JP 2019511113A5
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JP
Japan
Prior art keywords
doped
region
doped region
integrated circuit
transistor
Prior art date
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Granted
Application number
JP2018546551A
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English (en)
Japanese (ja)
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JP2019511113A (ja
JP6916536B2 (ja
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Publication date
Priority claimed from US15/386,252 external-priority patent/US10498326B2/en
Application filed filed Critical
Publication of JP2019511113A publication Critical patent/JP2019511113A/ja
Publication of JP2019511113A5 publication Critical patent/JP2019511113A5/ja
Application granted granted Critical
Publication of JP6916536B2 publication Critical patent/JP6916536B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2018546551A 2016-03-01 2017-03-01 パワーダウン保護を備えた出力ドライバ Active JP6916536B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201662301804P 2016-03-01 2016-03-01
US62/301,804 2016-03-01
US15/386,252 2016-12-21
US15/386,252 US10498326B2 (en) 2016-03-01 2016-12-21 Output driver with power down protection
PCT/US2017/020294 WO2017151827A1 (en) 2016-03-01 2017-03-01 Output drive with power down protection

Publications (3)

Publication Number Publication Date
JP2019511113A JP2019511113A (ja) 2019-04-18
JP2019511113A5 true JP2019511113A5 (enExample) 2020-04-09
JP6916536B2 JP6916536B2 (ja) 2021-08-11

Family

ID=59724427

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2018546551A Active JP6916536B2 (ja) 2016-03-01 2017-03-01 パワーダウン保護を備えた出力ドライバ

Country Status (4)

Country Link
US (1) US10498326B2 (enExample)
JP (1) JP6916536B2 (enExample)
CN (1) CN109075215B (enExample)
WO (1) WO2017151827A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10573639B2 (en) * 2016-02-29 2020-02-25 Globalfoundries Singapore Pte. Ltd. Silicon controlled rectifier (SCR) based ESD protection device
US10283584B2 (en) * 2016-09-27 2019-05-07 Globalfoundries Inc. Capacitive structure in a semiconductor device having reduced capacitance variability
US12027612B2 (en) * 2021-01-14 2024-07-02 Texas Instruments Incorporated SCR having selective well contacts

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5324982A (en) * 1985-09-25 1994-06-28 Hitachi, Ltd. Semiconductor memory device having bipolar transistor and structure to avoid soft error
DE69427025T2 (de) * 1994-08-31 2001-09-27 Stmicroelectronics S.R.L., Agrate Brianza Doppelquellenspannungsversorgungsschaltung
US6855985B2 (en) * 2002-09-29 2005-02-15 Advanced Analogic Technologies, Inc. Modular bipolar-CMOS-DMOS analog integrated circuit & power transistor technology
ATE490597T1 (de) 2003-07-04 2010-12-15 Dialog Semiconductor Gmbh Hochspannungschnittstelle und steuerschaltung dafür
US7166876B2 (en) 2004-04-28 2007-01-23 Taiwan Semiconductor Manufacturing Company, Ltd. MOSFET with electrostatic discharge protection structure and method of fabrication
EP2028760B1 (en) * 2007-08-22 2020-06-17 Semiconductor Components Industries, LLC A low side driver
US8049250B2 (en) * 2008-10-27 2011-11-01 Taiwan Semiconductor Manufacturing Company, Ltd. Circuit and method for power clamp triggered dual SCR ESD protection
US8344789B2 (en) * 2010-01-20 2013-01-01 Intersil Americas Inc. Analog switch with internal device body control
CN102097441B (zh) * 2010-12-17 2013-01-02 电子科技大学 用于等离子显示屏驱动芯片的soi器件
US9607978B2 (en) * 2013-01-30 2017-03-28 Microchip Technology Incorporated ESD-protection circuit for integrated circuit device

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