JP2017513239A5 - - Google Patents

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Publication number
JP2017513239A5
JP2017513239A5 JP2017501143A JP2017501143A JP2017513239A5 JP 2017513239 A5 JP2017513239 A5 JP 2017513239A5 JP 2017501143 A JP2017501143 A JP 2017501143A JP 2017501143 A JP2017501143 A JP 2017501143A JP 2017513239 A5 JP2017513239 A5 JP 2017513239A5
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JP
Japan
Prior art keywords
emitter
collector
semiconductor surface
base
metal
Prior art date
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Application number
JP2017501143A
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English (en)
Japanese (ja)
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JP2017513239A (ja
JP6607917B2 (ja
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Publication date
Priority claimed from US14/222,288 external-priority patent/US9153569B1/en
Application filed filed Critical
Publication of JP2017513239A publication Critical patent/JP2017513239A/ja
Publication of JP2017513239A5 publication Critical patent/JP2017513239A5/ja
Application granted granted Critical
Publication of JP6607917B2 publication Critical patent/JP6607917B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2017501143A 2014-03-21 2015-03-23 セグメント化ｎｐｎ垂直バイポーラトランジスタ Active JP6607917B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/222,288 2014-03-21
US14/222,288 US9153569B1 (en) 2014-03-21 2014-03-21 Segmented NPN vertical bipolar transistor
PCT/US2015/022030 WO2015143438A1 (en) 2014-03-21 2015-03-23 Segmented npn vertical bipolar transistor

Publications (3)

Publication Number Publication Date
JP2017513239A JP2017513239A (ja) 2017-05-25
JP2017513239A5 true JP2017513239A5 (enExample) 2018-04-19
JP6607917B2 JP6607917B2 (ja) 2019-11-20

Family

ID=54142857

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2017501143A Active JP6607917B2 (ja) 2014-03-21 2015-03-23 セグメント化ｎｐｎ垂直バイポーラトランジスタ

Country Status (5)

Country Link
US (1) US9153569B1 (enExample)
EP (1) EP3120386B1 (enExample)
JP (1) JP6607917B2 (enExample)
CN (1) CN106030808B (enExample)
WO (1) WO2015143438A1 (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105336738B (zh) * 2015-12-15 2018-03-20 电子科技大学 一种sa‑ligbt
CN108322195A (zh) * 2017-01-16 2018-07-24 天津大学（青岛）海洋工程研究院有限公司 一种具有静电放电保护电路的功率放大器
US10700055B2 (en) 2017-12-12 2020-06-30 Texas Instruments Incorporated Back ballasted vertical NPN transistor
US10249607B1 (en) 2017-12-15 2019-04-02 Texas Instruments Incorporated Internally stacked NPN with segmented collector
US11296075B2 (en) 2018-08-31 2022-04-05 Texas Instruments Incorporated High reliability polysilicon components
DE102020119781A1 (de) * 2019-07-26 2021-01-28 Texas Instruments Inc. Bipolartransistor mit segmentierten emitterkontakten
JP7157027B2 (ja) * 2019-09-12 2022-10-19 株式会社東芝 半導体装置
KR102804159B1 (ko) 2019-12-24 2025-05-09 에스케이하이닉스 주식회사 반도체 장치 및 이의 테스트 방법
US11156657B2 (en) * 2019-12-23 2021-10-26 SK Hynix Inc. Stacked semiconductor device and test method thereof
US11456283B2 (en) 2019-12-23 2022-09-27 SK Hynix Inc. Stacked semiconductor device and test method thereof
US11271099B2 (en) * 2020-07-28 2022-03-08 Amazing Microelectronic Corp. Vertical bipolar transistor device
US12389642B2 (en) 2022-04-29 2025-08-12 Texas Instruments Incorporated Semiconductor devices for high frequency applications

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5477414A (en) * 1993-05-03 1995-12-19 Xilinx, Inc. ESD protection circuit
US5455449A (en) * 1994-06-30 1995-10-03 National Semiconductor Corporation Offset lattice bipolar transistor architecture
US5473169A (en) * 1995-03-17 1995-12-05 United Microelectronics Corp. Complementary-SCR electrostatic discharge protection circuit
US5723897A (en) * 1995-06-07 1998-03-03 Vtc Inc. Segmented emitter low noise transistor
JPH09186249A (ja) * 1995-09-20 1997-07-15 Texas Instr Inc <Ti> Ｅｓｄ保護回路
US6529059B1 (en) * 2000-07-26 2003-03-04 Agere Systems Inc. Output stage ESD protection for an integrated circuit
US6472286B1 (en) 2000-08-09 2002-10-29 Taiwan Semiconductor Manufacturing Company Bipolar ESD protection structure
US6465870B2 (en) 2001-01-25 2002-10-15 International Business Machines Corporation ESD robust silicon germanium transistor with emitter NP-block mask extrinsic base ballasting resistor with doped facet region
US6541346B2 (en) * 2001-03-20 2003-04-01 Roger J. Malik Method and apparatus for a self-aligned heterojunction bipolar transistor using dielectric assisted metal liftoff process
FR2888664B1 (fr) * 2005-07-18 2008-05-02 Centre Nat Rech Scient Procede de realisation d'un transistor bipolaire a heterojonction
WO2008040031A2 (en) * 2006-09-26 2008-04-03 Texas Instruments Incorporated Emitter ballasting by contact area segmentation in esd bipolar based semiconductor component
JP2008118126A (ja) * 2006-10-13 2008-05-22 Toyota Central R&D Labs Inc 静電気保護用半導体装置
JP5595751B2 (ja) 2009-03-11 2014-09-24 ルネサスエレクトロニクス株式会社 Ｅｓｄ保護素子
US10199482B2 (en) * 2010-11-29 2019-02-05 Analog Devices, Inc. Apparatus for electrostatic discharge protection
US20130277804A1 (en) * 2012-04-20 2013-10-24 International Business Machines Corporation Bipolar junction transistors with reduced base-collector junction capacitance
US9224724B2 (en) 2012-05-30 2015-12-29 Texas Instruments Incorporated Mutual ballasting multi-finger bidirectional ESD device

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