CN102208455A - 硅控整流器 - Google Patents
硅控整流器 Download PDFInfo
- Publication number
- CN102208455A CN102208455A CN2011100765635A CN201110076563A CN102208455A CN 102208455 A CN102208455 A CN 102208455A CN 2011100765635 A CN2011100765635 A CN 2011100765635A CN 201110076563 A CN201110076563 A CN 201110076563A CN 102208455 A CN102208455 A CN 102208455A
- Authority
- CN
- China
- Prior art keywords
- doped region
- trap
- thyristor
- well
- controlled rectifier
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title abstract description 6
- 229910052710 silicon Inorganic materials 0.000 title abstract description 6
- 239000010703 silicon Substances 0.000 title abstract description 6
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 239000004065 semiconductor Substances 0.000 claims abstract description 11
- 238000002955 isolation Methods 0.000 claims description 15
- 239000002184 metal Substances 0.000 claims description 14
- 229910021332 silicide Inorganic materials 0.000 claims description 14
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 14
- 230000000903 blocking effect Effects 0.000 claims description 12
- 230000003071 parasitic effect Effects 0.000 abstract description 14
- 230000003292 diminished effect Effects 0.000 abstract 1
- 230000003068 static effect Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 230000003321 amplification Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/87—Thyristor diodes, e.g. Shockley diodes, break-over diodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
Abstract
Description
Claims (6)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201110076563.5A CN102208455B (zh) | 2011-03-29 | 2011-03-29 | 硅控整流器 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201110076563.5A CN102208455B (zh) | 2011-03-29 | 2011-03-29 | 硅控整流器 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102208455A true CN102208455A (zh) | 2011-10-05 |
CN102208455B CN102208455B (zh) | 2016-01-06 |
Family
ID=44697199
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201110076563.5A Active CN102208455B (zh) | 2011-03-29 | 2011-03-29 | 硅控整流器 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN102208455B (zh) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103579203A (zh) * | 2013-08-06 | 2014-02-12 | 晶焱科技股份有限公司 | 高效率硅控整流装置 |
CN106876389A (zh) * | 2017-04-28 | 2017-06-20 | 江南大学 | 一种具有阻容二极管辅助触发scr结构的esd防护器件 |
CN107785364A (zh) * | 2016-08-31 | 2018-03-09 | 创意电子股份有限公司 | 有界栅极的硅控整流器 |
CN112466938A (zh) * | 2020-11-26 | 2021-03-09 | 中国科学院微电子研究所 | 一种应用于深亚微米级电路静电防护的可控硅器件 |
CN113990866A (zh) * | 2021-12-28 | 2022-01-28 | 北京芯可鉴科技有限公司 | 一种硅控整流器、芯片及电路 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030197242A1 (en) * | 2002-04-22 | 2003-10-23 | United Microelectronics Corp. | Structure and fabrication method of electrostatic discharge protection circuit |
US20070090392A1 (en) * | 2005-10-11 | 2007-04-26 | Texas Instruments Incorporated | Low capacitance SCR with trigger element |
CN1979858A (zh) * | 2005-12-01 | 2007-06-13 | 上海华虹Nec电子有限公司 | 防静电保护器件 |
CN101728428A (zh) * | 2008-10-10 | 2010-06-09 | 和舰科技(苏州)有限公司 | 一种硅控整流器及其制造方法 |
-
2011
- 2011-03-29 CN CN201110076563.5A patent/CN102208455B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030197242A1 (en) * | 2002-04-22 | 2003-10-23 | United Microelectronics Corp. | Structure and fabrication method of electrostatic discharge protection circuit |
US20070090392A1 (en) * | 2005-10-11 | 2007-04-26 | Texas Instruments Incorporated | Low capacitance SCR with trigger element |
CN1979858A (zh) * | 2005-12-01 | 2007-06-13 | 上海华虹Nec电子有限公司 | 防静电保护器件 |
CN101728428A (zh) * | 2008-10-10 | 2010-06-09 | 和舰科技(苏州)有限公司 | 一种硅控整流器及其制造方法 |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103579203A (zh) * | 2013-08-06 | 2014-02-12 | 晶焱科技股份有限公司 | 高效率硅控整流装置 |
CN103579203B (zh) * | 2013-08-06 | 2016-03-30 | 晶焱科技股份有限公司 | 高效率硅控整流装置 |
CN107785364A (zh) * | 2016-08-31 | 2018-03-09 | 创意电子股份有限公司 | 有界栅极的硅控整流器 |
CN107785364B (zh) * | 2016-08-31 | 2020-04-21 | 创意电子股份有限公司 | 有界栅极的硅控整流器 |
CN106876389A (zh) * | 2017-04-28 | 2017-06-20 | 江南大学 | 一种具有阻容二极管辅助触发scr结构的esd防护器件 |
CN106876389B (zh) * | 2017-04-28 | 2023-07-25 | 江南大学 | 一种具有阻容二极管辅助触发scr结构的esd防护器件 |
CN112466938A (zh) * | 2020-11-26 | 2021-03-09 | 中国科学院微电子研究所 | 一种应用于深亚微米级电路静电防护的可控硅器件 |
CN112466938B (zh) * | 2020-11-26 | 2023-11-14 | 中国科学院微电子研究所 | 一种应用于深亚微米级电路静电防护的可控硅器件 |
CN113990866A (zh) * | 2021-12-28 | 2022-01-28 | 北京芯可鉴科技有限公司 | 一种硅控整流器、芯片及电路 |
Also Published As
Publication number | Publication date |
---|---|
CN102208455B (zh) | 2016-01-06 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HONGLI SEMICONDUCTOR MANUFACTURE CO LTD, SHANGHAI Effective date: 20140424 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20140424 Address after: 201203 Shanghai Zhangjiang hi tech park Zuchongzhi Road No. 1399 Applicant after: Shanghai Huahong Grace Semiconductor Manufacturing Corp. Address before: 201203 Shanghai Guo Shou Jing Road, Pudong New Area Zhangjiang hi tech Park No. 818 Applicant before: Shanghai Huahong Grace Semiconductor Manufacturing Corp. Effective date of registration: 20140424 Address after: 201203 Shanghai Guo Shou Jing Road, Pudong New Area Zhangjiang hi tech Park No. 818 Applicant after: Shanghai Huahong Grace Semiconductor Manufacturing Corp. Address before: 201203 Shanghai Guo Shou Jing Road, Pudong New Area Zhangjiang hi tech Park No. 818 Applicant before: Grace Semiconductor Manufacturing Corp. |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant |