CN106030808B - 分段式npn垂直双极晶体管 - Google Patents

分段式npn垂直双极晶体管 Download PDF

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Publication number
CN106030808B
CN106030808B CN201580009877.XA CN201580009877A CN106030808B CN 106030808 B CN106030808 B CN 106030808B CN 201580009877 A CN201580009877 A CN 201580009877A CN 106030808 B CN106030808 B CN 106030808B
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China
Prior art keywords
emitter
collector
semiconductor surface
base
metal
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CN201580009877.XA
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Chinese (zh)
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CN106030808A (zh
Inventor
亨利·利茨曼·爱德华兹
阿克拉姆·A·萨勒曼
Md·伊克巴勒·马哈茂德
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Texas Instruments Inc
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Texas Instruments Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/711—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using bipolar transistors as protective elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/40—Vertical BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/133—Emitter regions of BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/231—Emitter or collector electrodes for bipolar transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/641—Combinations of only vertical BJTs
    • H10D84/642—Combinations of non-inverted vertical BJTs of the same conductivity type having different characteristics, e.g. Darlington transistors

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  • Bipolar Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
CN201580009877.XA 2014-03-21 2015-03-23 分段式npn垂直双极晶体管 Active CN106030808B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/222,288 US9153569B1 (en) 2014-03-21 2014-03-21 Segmented NPN vertical bipolar transistor
US14/222,288 2014-03-21
PCT/US2015/022030 WO2015143438A1 (en) 2014-03-21 2015-03-23 Segmented npn vertical bipolar transistor

Publications (2)

Publication Number Publication Date
CN106030808A CN106030808A (zh) 2016-10-12
CN106030808B true CN106030808B (zh) 2020-06-16

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN201580009877.XA Active CN106030808B (zh) 2014-03-21 2015-03-23 分段式npn垂直双极晶体管

Country Status (5)

Country Link
US (1) US9153569B1 (enExample)
EP (1) EP3120386B1 (enExample)
JP (1) JP6607917B2 (enExample)
CN (1) CN106030808B (enExample)
WO (1) WO2015143438A1 (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105336738B (zh) * 2015-12-15 2018-03-20 电子科技大学 一种sa‑ligbt
CN108322195A (zh) * 2017-01-16 2018-07-24 天津大学（青岛）海洋工程研究院有限公司 一种具有静电放电保护电路的功率放大器
US10700055B2 (en) 2017-12-12 2020-06-30 Texas Instruments Incorporated Back ballasted vertical NPN transistor
US10249607B1 (en) 2017-12-15 2019-04-02 Texas Instruments Incorporated Internally stacked NPN with segmented collector
US11296075B2 (en) 2018-08-31 2022-04-05 Texas Instruments Incorporated High reliability polysilicon components
US11923442B2 (en) * 2019-07-26 2024-03-05 Texas Instruments Incorporated Bipolar transistor with segmented emitter contacts
JP7157027B2 (ja) * 2019-09-12 2022-10-19 株式会社東芝 半導体装置
KR102804159B1 (ko) 2019-12-24 2025-05-09 에스케이하이닉스 주식회사 반도체 장치 및 이의 테스트 방법
US11456283B2 (en) 2019-12-23 2022-09-27 SK Hynix Inc. Stacked semiconductor device and test method thereof
US11156657B2 (en) * 2019-12-23 2021-10-26 SK Hynix Inc. Stacked semiconductor device and test method thereof
US11271099B2 (en) * 2020-07-28 2022-03-08 Amazing Microelectronic Corp. Vertical bipolar transistor device
US12389642B2 (en) 2022-04-29 2025-08-12 Texas Instruments Incorporated Semiconductor devices for high frequency applications

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5455186A (en) * 1994-06-30 1995-10-03 National Semiconductor Corporation Method for manufacturing an offset lattice bipolar transistor
US5723897A (en) * 1995-06-07 1998-03-03 Vtc Inc. Segmented emitter low noise transistor
US20040169234A1 (en) * 2000-08-09 2004-09-02 Taiwan Semiconductor Manufacturing Company Bipolar ESD protection structure
WO2008040031A2 (en) * 2006-09-26 2008-04-03 Texas Instruments Incorporated Emitter ballasting by contact area segmentation in esd bipolar based semiconductor component

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5477414A (en) * 1993-05-03 1995-12-19 Xilinx, Inc. ESD protection circuit
US5473169A (en) * 1995-03-17 1995-12-05 United Microelectronics Corp. Complementary-SCR electrostatic discharge protection circuit
EP0768713B1 (en) * 1995-09-20 2006-03-08 Texas Instruments Incorporated Circuit including protection means
US6529059B1 (en) * 2000-07-26 2003-03-04 Agere Systems Inc. Output stage ESD protection for an integrated circuit
US6465870B2 (en) 2001-01-25 2002-10-15 International Business Machines Corporation ESD robust silicon germanium transistor with emitter NP-block mask extrinsic base ballasting resistor with doped facet region
US6541346B2 (en) * 2001-03-20 2003-04-01 Roger J. Malik Method and apparatus for a self-aligned heterojunction bipolar transistor using dielectric assisted metal liftoff process
FR2888664B1 (fr) * 2005-07-18 2008-05-02 Centre Nat Rech Scient Procede de realisation d'un transistor bipolaire a heterojonction
JP2008118126A (ja) * 2006-10-13 2008-05-22 Toyota Central R&D Labs Inc 静電気保護用半導体装置
JP5595751B2 (ja) 2009-03-11 2014-09-24 ルネサスエレクトロニクス株式会社 Ｅｓｄ保護素子
US10199482B2 (en) * 2010-11-29 2019-02-05 Analog Devices, Inc. Apparatus for electrostatic discharge protection
US20130277804A1 (en) * 2012-04-20 2013-10-24 International Business Machines Corporation Bipolar junction transistors with reduced base-collector junction capacitance
US9224724B2 (en) 2012-05-30 2015-12-29 Texas Instruments Incorporated Mutual ballasting multi-finger bidirectional ESD device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5455186A (en) * 1994-06-30 1995-10-03 National Semiconductor Corporation Method for manufacturing an offset lattice bipolar transistor
US5723897A (en) * 1995-06-07 1998-03-03 Vtc Inc. Segmented emitter low noise transistor
US20040169234A1 (en) * 2000-08-09 2004-09-02 Taiwan Semiconductor Manufacturing Company Bipolar ESD protection structure
WO2008040031A2 (en) * 2006-09-26 2008-04-03 Texas Instruments Incorporated Emitter ballasting by contact area segmentation in esd bipolar based semiconductor component

Also Published As

Publication number Publication date
JP2017513239A (ja) 2017-05-25
CN106030808A (zh) 2016-10-12
EP3120386A4 (en) 2017-11-08
EP3120386B1 (en) 2024-07-17
EP3120386A1 (en) 2017-01-25
JP6607917B2 (ja) 2019-11-20
US20150270256A1 (en) 2015-09-24
WO2015143438A1 (en) 2015-09-24
US9153569B1 (en) 2015-10-06

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