JP2016521428A5 - - Google Patents

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Publication number
JP2016521428A5
JP2016521428A5 JP2016501222A JP2016501222A JP2016521428A5 JP 2016521428 A5 JP2016521428 A5 JP 2016521428A5 JP 2016501222 A JP2016501222 A JP 2016501222A JP 2016501222 A JP2016501222 A JP 2016501222A JP 2016521428 A5 JP2016521428 A5 JP 2016521428A5
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JP
Japan
Prior art keywords
memory array
voltage
nbti
operating voltage
temperature
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Application number
JP2016501222A
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English (en)
Japanese (ja)
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JP6069575B2 (ja
JP2016521428A (ja
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Priority claimed from US13/842,263 external-priority patent/US9378803B2/en
Application filed filed Critical
Publication of JP2016521428A publication Critical patent/JP2016521428A/ja
Publication of JP2016521428A5 publication Critical patent/JP2016521428A5/ja
Application granted granted Critical
Publication of JP6069575B2 publication Critical patent/JP6069575B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2016501222A 2013-03-15 2014-03-11 メモリアレイの動作電圧を調整するためのシステムおよび方法 Expired - Fee Related JP6069575B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/842,263 US9378803B2 (en) 2013-03-15 2013-03-15 System and method to regulate operating voltage of a memory array
US13/842,263 2013-03-15
PCT/US2014/023381 WO2014150487A2 (en) 2013-03-15 2014-03-11 System and method to regulate operating voltage of a memory array

Publications (3)

Publication Number Publication Date
JP2016521428A JP2016521428A (ja) 2016-07-21
JP2016521428A5 true JP2016521428A5 (https=) 2016-12-28
JP6069575B2 JP6069575B2 (ja) 2017-02-01

Family

ID=50686112

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016501222A Expired - Fee Related JP6069575B2 (ja) 2013-03-15 2014-03-11 メモリアレイの動作電圧を調整するためのシステムおよび方法

Country Status (6)

Country Link
US (1) US9378803B2 (https=)
EP (1) EP2973577B1 (https=)
JP (1) JP6069575B2 (https=)
KR (1) KR101725828B1 (https=)
CN (1) CN105027214B (https=)
WO (1) WO2014150487A2 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9251909B1 (en) 2014-09-29 2016-02-02 International Business Machines Corporation Background threshold voltage shifting using base and delta threshold voltage shift values in flash memory
US10126791B2 (en) * 2014-11-04 2018-11-13 Progranalog Corp. Configurable power management integrated circuit
EP3379416B1 (en) * 2017-03-24 2023-06-14 Nxp B.V. Memory system
KR102831926B1 (ko) * 2020-10-16 2025-07-10 에스케이하이닉스 주식회사 저장 장치 및 그 동작 방법
KR102893634B1 (ko) * 2021-10-29 2025-12-09 삼성전자주식회사 스토리지 장치 및 스토리지 장치의 제어 방법
US12379768B2 (en) 2021-12-22 2025-08-05 Samsung Electronics Co., Ltd. Electronic device and method of controlling temperature associated with a semiconductor device using dynamic voltage frequency scaling (DVFS)

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06314491A (ja) * 1993-04-30 1994-11-08 Hitachi Ltd 半導体記憶装置
US7941675B2 (en) 2002-12-31 2011-05-10 Burr James B Adaptive power control
US7317605B2 (en) * 2004-03-11 2008-01-08 International Business Machines Corporation Method and apparatus for improving performance margin in logic paths
US6933869B1 (en) 2004-03-17 2005-08-23 Altera Corporation Integrated circuits with temperature-change and threshold-voltage drift compensation
KR100735677B1 (ko) 2005-12-28 2007-07-04 삼성전자주식회사 스탠바이 전류 저감 회로 및 이를 구비한 반도체 메모리장치
JP2007323770A (ja) * 2006-06-02 2007-12-13 Renesas Technology Corp Ｓｒａｍ
US20090168573A1 (en) 2007-12-31 2009-07-02 Ming Zhang Adaptive memory array voltage adjustment
US8593203B2 (en) 2008-07-29 2013-11-26 Qualcomm Incorporated High signal level compliant input/output circuits
US8161431B2 (en) 2008-10-30 2012-04-17 Agere Systems Inc. Integrated circuit performance enhancement using on-chip adaptive voltage scaling
KR101402178B1 (ko) * 2009-03-30 2014-05-30 퀄컴 인코포레이티드 적응형 전압 스케일링
JP2011054248A (ja) * 2009-09-02 2011-03-17 Toshiba Corp 参照電流生成回路
CN102597906B (zh) * 2009-11-06 2016-02-03 飞思卡尔半导体公司 对电子器件中的损耗的响应
US8354875B2 (en) 2010-03-25 2013-01-15 Qualcomm Incorporated Low voltage temperature sensor and use thereof for autonomous multiprobe measurement device
US8330534B2 (en) * 2010-11-17 2012-12-11 Advanced Micro Devices, Inc. Circuit for negative bias temperature instability compensation

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