KR101725828B1 - 메모리 어레이의 동작 전압을 조정하는 시스템 및 방법 - Google Patents

메모리 어레이의 동작 전압을 조정하는 시스템 및 방법 Download PDF

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Publication number
KR101725828B1
KR101725828B1 KR1020157028539A KR20157028539A KR101725828B1 KR 101725828 B1 KR101725828 B1 KR 101725828B1 KR 1020157028539 A KR1020157028539 A KR 1020157028539A KR 20157028539 A KR20157028539 A KR 20157028539A KR 101725828 B1 KR101725828 B1 KR 101725828B1
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KR
South Korea
Prior art keywords
voltage
memory array
nbti
operating voltage
temperature
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KR1020157028539A
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English (en)
Korean (ko)
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KR20150131179A (ko
Inventor
스탠리 승철 송
총제 왕
Original Assignee
퀄컴 인코포레이티드
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4074—Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits
    • G06F17/5072—
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F30/00—Computer-aided design [CAD]
    • G06F30/30—Circuit design
    • G06F30/39—Circuit design at the physical level
    • G06F30/392—Floor-planning or layout, e.g. partitioning or placement
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/04—Arrangements for writing information into, or reading information out from, a digital store with means for avoiding disturbances due to temperature effects

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Architecture (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Evolutionary Computation (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Power Sources (AREA)
  • Static Random-Access Memory (AREA)
  • Read Only Memory (AREA)
KR1020157028539A 2013-03-15 2014-03-11 메모리 어레이의 동작 전압을 조정하는 시스템 및 방법 Expired - Fee Related KR101725828B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/842,263 US9378803B2 (en) 2013-03-15 2013-03-15 System and method to regulate operating voltage of a memory array
US13/842,263 2013-03-15
PCT/US2014/023381 WO2014150487A2 (en) 2013-03-15 2014-03-11 System and method to regulate operating voltage of a memory array

Publications (2)

Publication Number Publication Date
KR20150131179A KR20150131179A (ko) 2015-11-24
KR101725828B1 true KR101725828B1 (ko) 2017-04-11

Family

ID=50686112

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020157028539A Expired - Fee Related KR101725828B1 (ko) 2013-03-15 2014-03-11 메모리 어레이의 동작 전압을 조정하는 시스템 및 방법

Country Status (6)

Country Link
US (1) US9378803B2 (https=)
EP (1) EP2973577B1 (https=)
JP (1) JP6069575B2 (https=)
KR (1) KR101725828B1 (https=)
CN (1) CN105027214B (https=)
WO (1) WO2014150487A2 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9251909B1 (en) 2014-09-29 2016-02-02 International Business Machines Corporation Background threshold voltage shifting using base and delta threshold voltage shift values in flash memory
US10126791B2 (en) * 2014-11-04 2018-11-13 Progranalog Corp. Configurable power management integrated circuit
EP3379416B1 (en) * 2017-03-24 2023-06-14 Nxp B.V. Memory system
KR102831926B1 (ko) * 2020-10-16 2025-07-10 에스케이하이닉스 주식회사 저장 장치 및 그 동작 방법
KR102893634B1 (ko) * 2021-10-29 2025-12-09 삼성전자주식회사 스토리지 장치 및 스토리지 장치의 제어 방법
US12379768B2 (en) 2021-12-22 2025-08-05 Samsung Electronics Co., Ltd. Electronic device and method of controlling temperature associated with a semiconductor device using dynamic voltage frequency scaling (DVFS)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050201188A1 (en) 2004-03-11 2005-09-15 International Business Machines Corporation Method and apparatus for improving performance margin in logic paths
US20110080202A1 (en) 2009-03-30 2011-04-07 Qualcomm Incorporated ADAPTIVE VOLTAGE SCALERS (AVSs), SYSTEMS, AND RELATED METHODS
US20120119825A1 (en) 2010-11-17 2012-05-17 Bo Zhai Circuit for negative bias temperature instability compensation
US20120206183A1 (en) 2009-11-06 2012-08-16 Freescale Semiconductor, Inc. Response to wearout in an electronic device

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06314491A (ja) * 1993-04-30 1994-11-08 Hitachi Ltd 半導体記憶装置
US7941675B2 (en) 2002-12-31 2011-05-10 Burr James B Adaptive power control
US6933869B1 (en) 2004-03-17 2005-08-23 Altera Corporation Integrated circuits with temperature-change and threshold-voltage drift compensation
KR100735677B1 (ko) 2005-12-28 2007-07-04 삼성전자주식회사 스탠바이 전류 저감 회로 및 이를 구비한 반도체 메모리장치
JP2007323770A (ja) * 2006-06-02 2007-12-13 Renesas Technology Corp Ｓｒａｍ
US20090168573A1 (en) 2007-12-31 2009-07-02 Ming Zhang Adaptive memory array voltage adjustment
US8593203B2 (en) 2008-07-29 2013-11-26 Qualcomm Incorporated High signal level compliant input/output circuits
US8161431B2 (en) 2008-10-30 2012-04-17 Agere Systems Inc. Integrated circuit performance enhancement using on-chip adaptive voltage scaling
JP2011054248A (ja) * 2009-09-02 2011-03-17 Toshiba Corp 参照電流生成回路
US8354875B2 (en) 2010-03-25 2013-01-15 Qualcomm Incorporated Low voltage temperature sensor and use thereof for autonomous multiprobe measurement device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050201188A1 (en) 2004-03-11 2005-09-15 International Business Machines Corporation Method and apparatus for improving performance margin in logic paths
US20110080202A1 (en) 2009-03-30 2011-04-07 Qualcomm Incorporated ADAPTIVE VOLTAGE SCALERS (AVSs), SYSTEMS, AND RELATED METHODS
US20120206183A1 (en) 2009-11-06 2012-08-16 Freescale Semiconductor, Inc. Response to wearout in an electronic device
US20120119825A1 (en) 2010-11-17 2012-05-17 Bo Zhai Circuit for negative bias temperature instability compensation

Also Published As

Publication number Publication date
US9378803B2 (en) 2016-06-28
CN105027214A (zh) 2015-11-04
WO2014150487A2 (en) 2014-09-25
CN105027214B (zh) 2017-10-27
EP2973577A2 (en) 2016-01-20
KR20150131179A (ko) 2015-11-24
US20140269020A1 (en) 2014-09-18
WO2014150487A3 (en) 2014-11-13
EP2973577B1 (en) 2017-12-20
JP6069575B2 (ja) 2017-02-01
JP2016521428A (ja) 2016-07-21

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