JP2016518693A - 有機発光素子及びこの製造方法 - Google Patents
有機発光素子及びこの製造方法 Download PDFInfo
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- JP2016518693A JP2016518693A JP2016515283A JP2016515283A JP2016518693A JP 2016518693 A JP2016518693 A JP 2016518693A JP 2016515283 A JP2016515283 A JP 2016515283A JP 2016515283 A JP2016515283 A JP 2016515283A JP 2016518693 A JP2016518693 A JP 2016518693A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 15
- 229910052751 metal Inorganic materials 0.000 claims description 119
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- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 19
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 17
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 9
- 229910052782 aluminium Inorganic materials 0.000 claims description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 9
- 229910052802 copper Inorganic materials 0.000 claims description 9
- 239000010949 copper Substances 0.000 claims description 9
- 229910052759 nickel Inorganic materials 0.000 claims description 9
- 239000010935 stainless steel Substances 0.000 claims description 9
- 229910001220 stainless steel Inorganic materials 0.000 claims description 9
- 239000010409 thin film Substances 0.000 claims description 9
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 8
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 8
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- 239000010931 gold Substances 0.000 claims description 8
- 229910052742 iron Inorganic materials 0.000 claims description 8
- 229910052709 silver Inorganic materials 0.000 claims description 8
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- 229910000851 Alloy steel Inorganic materials 0.000 description 1
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- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 239000004820 Pressure-sensitive adhesive Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
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- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
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- 230000000694 effects Effects 0.000 description 1
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- 239000007789 gas Substances 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
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- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
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- 229910052750 molybdenum Inorganic materials 0.000 description 1
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- 230000007704 transition Effects 0.000 description 1
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
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Abstract
Description
前記密封部が、基材と、前記基材の一端に形成された金属パターンを備える印刷回路基板と、前記印刷回路基板と前記有機発光部の外側との間を満たすシーリング層とを備える有機発光素子を提供する。
前記基板のうち、前記有機発光部の外側を覆う密封部を設けるステップと、を含み、
前記密封部が、基材と、前記基材の一端に形成された金属パターンを備える印刷回路基板と、前記印刷回路基板と前記有機発光部の外側との間を満たすシーリング層とを備える有機発光素子の製造方法を提供する。
前記基材の一端に備えられた金属パターンと、
前記基材の他面に備えられたシーリング層と、を備える印刷回路基板の構造体を提供する。
第1の金属パターンは、第1の電極と外部電源とを電気的に接続し、
第2の金属パターンは、第2の電極と外部電源とを電気的に接続し、
第1の金属パターン及び第2の金属パターンは、各々離隔して電気的に短絡した構造である。
基板のうち、有機発光部の外側を覆う密封部を設けるステップと、を含み、
密封部が、基材と、基材の一端に形成された金属パターンを備える印刷回路基板と、印刷回路基板と有機発光部の外側との間を満たすシーリング層とを備える有機発光素子の製造方法を提供する。
第2の金属パターンは、第2の電極と外部電源とを電気的に接続し、
第1の金属パターン及び第2の金属パターンは、各々離隔して電気的に短絡した構造である。
Claims (42)
- 基板と、前記基板上に第1の電極、有機物層、及び第2の電極が順次積層された有機発光部と、前記基板のうち、有機発光部の外側を覆う密封部とを備え、
前記密封部が、基材と、前記基材の一端に形成された金属パターンを備える印刷回路基板と、前記印刷回路基板と前記有機発光部の外側との間を満たすシーリング層と、を備える有機発光素子。 - 前記印刷回路基板が、1種以上の金属パターンを備える、請求項1に記載の有機発光素子。
- 前記印刷回路基板が、前記基材と金属パターンとの間、2種以上の金属パターンの間、及び金属パターンの上部のうち、少なくとも1つに備えられた絶縁層を備える、請求項2に記載の有機発光素子。
- 前記印刷回路基板が、軟性印刷回路基板である、請求項1に記載の有機発光素子。
- 前記第1の電極または第2の電極が、前記金属パターンを介して外部電源と電気的に接続される、請求項1に記載の有機発光素子。
- 前記金属パターンが、前記第1の電極と外部電源とを電気的に接続する第1の金属パターンを備える、請求項1に記載の有機発光素子。
- 前記金属パターンが、前記第2の電極と外部電源とを電気的に接続する第2の金属パターンを備える、請求項1に記載の有機発光素子。
- 前記基材の一面に前記金属パターンと接続されない金属板を備え、前記金属板が、前記有機発光部の発光領域の上部に備えられる、請求項1に記載の有機発光素子。
- 前記金属板が、銅、鉄、ニッケル、チタニウム、アルミニウム、銀、及び金からなる群より選ばれる1種または2種以上の合金、またはステンレス鋼の薄膜である、請求項8に記載の有機発光素子。
- 前記金属板の大きさが、前記有機発光部の大きさに対応するか、前記有機発光部の大きさよりさらに大きい、請求項8に記載の有機発光素子。
- 前記基材の一端に備えられた金属パターンが、第1の金属パターン及び第2の金属パターンを備え、
前記第1の金属パターンが、前記第1の電極と外部電源とを電気的に接続し、
前記第2の金属パターンが、前記第2の電極と外部電源とを電気的に接続し、
前記第1の金属パターン及び第2の金属パターンが、各々離隔して電気的に短絡した構造である、請求項1に記載の有機発光素子。 - 前記密封部が、前記印刷回路基板と前記基板とを接着する異方性導電フィルムをさらに備える、請求項1に記載の有機発光素子。
- 前記有機発光素子が、前記基材の他端に備えられた異方性導電フィルムをさらに備え、
前記シーリング層が、前記基材の他面のうち、異方性導電フィルムが備えられていない領域に備えられる、請求項1に記載の有機発光素子。 - 前記絶縁層の材質が、ポリイミド系樹脂である、請求項3に記載の有機発光素子。
- 前記金属パターンが、銅、鉄、ニッケル、チタニウム、アルミニウム、銀、及び金からなる群より選ばれる1種または2種以上の合金、またはステンレス鋼の薄膜である、請求項1に記載の有機発光素子。
- 前記基板が、ガラス基板またはプラスチック基板である、請求項1に記載の有機発光素子。
- 前記印刷回路基板の厚さが、20〜200μmである、請求項1に記載の有機発光素子。
- 前記シーリング層の厚さが、10〜50μmである、請求項1に記載の有機発光素子。
- 前記シーリング層が、ゲッターを含む粘着剤である、請求項1に記載の有機発光素子。
- 前記有機発光素子が、フレキシブル有機発光素子である、請求項1に記載の有機発光素子。
- 前記基板と前記第1の電極との間及び前記第1の電極が備えられる面と対向する面のうち、少なくとも1つに、1つ以上の光散乱層をさらに備える、請求項1に記載の有機発光素子。
- 請求項1から21のいずれか1項に記載の有機発光素子を備えるディスプレイ装置。
- 請求項1から21のいずれか1項に記載の有機発光素子を備える照明装置。
- 基板上に第1の電極、有機物層、及び第2の電極を順次積層して有機発光部を形成するステップと、
前記基板のうち、有機発光部の外側を覆う密封部を設けるステップと、
を含み、
前記密封部が、基材と、前記基材の一端に形成された金属パターンを備える印刷回路基板と、前記印刷回路基板と前記有機発光部の外側との間を満たすシーリング層とを備える有機発光素子の製造方法。 - 前記印刷回路基板が、1種以上の金属パターンを備える、請求項24に記載の有機発光素子の製造方法。
- 前記印刷回路基板が、前記基材と金属パターンとの間、2種以上の金属パターンの間、及び金属パターンの上部のうち、少なくとも1つに備えられた絶縁層を備える、請求項24に記載の有機発光素子の製造方法。
- 前記印刷回路基板が、軟性印刷回路基板である、請求項24に記載の有機発光素子の製造方法。
- 前記密封部を設けるステップにおいて、前記印刷回路基板と前記基板とが、異方性導電フィルムによって接着された、請求項24に記載の有機発光素子の製造方法。
- 前記密封部が、前記基材の一面の中央に位置し、前記金属パターンと接続されない金属板をさらに備える、請求項24に記載の有機発光素子の製造方法。
- 前記金属板が、銅、鉄、ニッケル、チタニウム、アルミニウム、銀、及び金からなる群より選ばれる1種または2種以上の合金、またはステンレス鋼の薄膜である、請求項29に記載の有機発光素子の製造方法。
- 基材と、
前記基材の一端に備えられた金属パターンと、
前記基材の他面に備えられたシーリング層と、
を備える印刷回路基板の構造体。 - 前記金属パターンが、1種以上の金属パターンを備える、請求項31に記載の印刷回路基板の構造体。
- 前記印刷回路基板が、前記基材と金属パターンとの間、2種以上の金属パターンの間、及び金属パターンの上部のうち、少なくとも1つに備えられた絶縁層を備える、請求項32に記載の印刷回路基板の構造体。
- 前記印刷回路基板の構造体が、軟性印刷回路基板の構造体である、請求項31に記載の印刷回路基板の構造体。
- 前記基材の一面の中央に位置し、前記金属パターンと接続されない金属板をさらに備える、請求項31に記載の印刷回路基板の構造体。
- 前記金属板が、銅、鉄、ニッケル、チタニウム、アルミニウム、銀、及び金からなる群より選ばれる1種または2種以上の合金、またはステンレス鋼の薄膜である、請求項35に記載の印刷回路基板の構造体。
- 前記印刷回路基板の構造体が、第1の電極及び第2の電極が備えられた素子をさらに備え、
前記金属パターンが、前記第1の電極と外部電源とを電気的に接続する第1の金属パターン及び前記第2の電極と外部電源とを電気的に接続する第2の金属パターンを備える、請求項31に記載の印刷回路基板の構造体。 - 前記絶縁層の材質が、ポリイミド系樹脂である、請求項33に記載の印刷回路基板の構造体。
- 前記金属パターンが、銅、鉄、ニッケル、チタニウム、アルミニウム、銀、及び金からなる群より選ばれる1種または2種以上の合金、またはステンレス鋼の薄膜である、請求項31に記載の印刷回路基板の構造体。
- 前記基材の他端に備えられた異方性導電フィルムをさらに備え、前記シーリング層が、前記基材の他面のうち、異方性導電フィルムが備えられていない領域に備えられる、請求項31に記載の印刷回路基板の構造体。
- 前記シーリング層の厚さが、10〜50μmである、請求項31に記載の印刷回路基板の構造体。
- 前記シーリング層が、ゲッターを含む粘着剤である、請求項31に記載の印刷回路基板の構造体。
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