JP2016515166A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2016515166A5 JP2016515166A5 JP2015559305A JP2015559305A JP2016515166A5 JP 2016515166 A5 JP2016515166 A5 JP 2016515166A5 JP 2015559305 A JP2015559305 A JP 2015559305A JP 2015559305 A JP2015559305 A JP 2015559305A JP 2016515166 A5 JP2016515166 A5 JP 2016515166A5
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- moisture
- film
- silicon
- precursor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 claims 19
- 239000010408 film Substances 0.000 claims 18
- 239000000758 substrate Substances 0.000 claims 16
- 239000002243 precursor Substances 0.000 claims 15
- 229910052760 oxygen Inorganic materials 0.000 claims 13
- 239000001301 oxygen Substances 0.000 claims 13
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 12
- 230000004888 barrier function Effects 0.000 claims 9
- 229910052814 silicon oxide Inorganic materials 0.000 claims 9
- 150000001875 compounds Chemical class 0.000 claims 8
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 claims 4
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 claims 4
- 229910002091 carbon monoxide Inorganic materials 0.000 claims 4
- 238000005336 cracking Methods 0.000 claims 4
- 150000003376 silicon Chemical class 0.000 claims 4
- 230000005540 biological transmission Effects 0.000 claims 3
- 229910052751 metal Inorganic materials 0.000 claims 3
- 239000002184 metal Substances 0.000 claims 3
- 239000000203 mixture Substances 0.000 claims 3
- 229910052757 nitrogen Inorganic materials 0.000 claims 3
- 125000002524 organometallic group Chemical group 0.000 claims 3
- 239000003642 reactive oxygen metabolite Substances 0.000 claims 3
- 238000000926 separation method Methods 0.000 claims 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims 2
- 229920005570 flexible polymer Polymers 0.000 claims 2
- 239000010409 thin film Substances 0.000 claims 2
- 239000010936 titanium Substances 0.000 claims 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 claims 2
- MGWGWNFMUOTEHG-UHFFFAOYSA-N 4-(3,5-dimethylphenyl)-1,3-thiazol-2-amine Chemical compound CC1=CC(C)=CC(C=2N=C(N)SC=2)=C1 MGWGWNFMUOTEHG-UHFFFAOYSA-N 0.000 claims 1
- NRUDICNDZOYWRM-UHFFFAOYSA-N N-(disilanyl)ethanamine Chemical class C(C)N[SiH2][SiH3] NRUDICNDZOYWRM-UHFFFAOYSA-N 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- VOSJXMPCFODQAR-UHFFFAOYSA-N ac1l3fa4 Chemical compound [SiH3]N([SiH3])[SiH3] VOSJXMPCFODQAR-UHFFFAOYSA-N 0.000 claims 1
- 229910002092 carbon dioxide Inorganic materials 0.000 claims 1
- 239000001569 carbon dioxide Substances 0.000 claims 1
- HQWPLXHWEZZGKY-UHFFFAOYSA-N diethylzinc Chemical compound CC[Zn]CC HQWPLXHWEZZGKY-UHFFFAOYSA-N 0.000 claims 1
- 230000005284 excitation Effects 0.000 claims 1
- HOXINJBQVZWYGZ-UHFFFAOYSA-N fenbutatin oxide Chemical compound C=1C=CC=CC=1C(C)(C)C[Sn](O[Sn](CC(C)(C)C=1C=CC=CC=1)(CC(C)(C)C=1C=CC=CC=1)CC(C)(C)C=1C=CC=CC=1)(CC(C)(C)C=1C=CC=CC=1)CC(C)(C)C1=CC=CC=C1 HOXINJBQVZWYGZ-UHFFFAOYSA-N 0.000 claims 1
- 230000009477 glass transition Effects 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- VYIRVGYSUZPNLF-UHFFFAOYSA-N n-(tert-butylamino)silyl-2-methylpropan-2-amine Chemical compound CC(C)(C)N[SiH2]NC(C)(C)C VYIRVGYSUZPNLF-UHFFFAOYSA-N 0.000 claims 1
- SSCVMVQLICADPI-UHFFFAOYSA-N n-methyl-n-[tris(dimethylamino)silyl]methanamine Chemical compound CN(C)[Si](N(C)C)(N(C)C)N(C)C SSCVMVQLICADPI-UHFFFAOYSA-N 0.000 claims 1
- JCXJVPUVTGWSNB-UHFFFAOYSA-N nitrogen dioxide Inorganic materials O=[N]=O JCXJVPUVTGWSNB-UHFFFAOYSA-N 0.000 claims 1
- -1 oxygen radicals Chemical class 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 claims 1
- GIRKRMUMWJFNRI-UHFFFAOYSA-N tris(dimethylamino)silicon Chemical compound CN(C)[Si](N(C)C)N(C)C GIRKRMUMWJFNRI-UHFFFAOYSA-N 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201361770230P | 2013-02-27 | 2013-02-27 | |
| US61/770,230 | 2013-02-27 | ||
| PCT/US2014/018765 WO2014134204A1 (en) | 2013-02-27 | 2014-02-26 | Mixed metal-silicon-oxide barriers |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2016515166A JP2016515166A (ja) | 2016-05-26 |
| JP2016515166A5 true JP2016515166A5 (enExample) | 2017-04-06 |
| JP6437463B2 JP6437463B2 (ja) | 2018-12-12 |
Family
ID=51388551
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015559305A Active JP6437463B2 (ja) | 2013-02-27 | 2014-02-26 | 混合金属‐シリコン‐酸化物バリア |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US9263359B2 (enExample) |
| EP (1) | EP2922979B1 (enExample) |
| JP (1) | JP6437463B2 (enExample) |
| KR (1) | KR102213047B1 (enExample) |
| CN (1) | CN105143501B (enExample) |
| WO (1) | WO2014134204A1 (enExample) |
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102014211720A1 (de) * | 2014-06-18 | 2015-12-24 | Robert Bosch Gmbh | Optikträger, Verfahren zur Herstellung eines Optikträgers, Vorrichtung zur Herstellung eines Optikträgers und Kamerasystem |
| EP3172263B1 (en) * | 2014-07-24 | 2020-12-02 | OSRAM OLED GmbH | Method for producing a barrier layer and carrier body comprising such a barrier layer |
| DE102015102535B4 (de) * | 2015-02-23 | 2023-08-03 | Infineon Technologies Ag | Verbundsystem und Verfahren zum haftenden Verbinden eines hygroskopischen Materials |
| US10654251B2 (en) | 2015-06-29 | 2020-05-19 | 3M Innovative Properties Company | Ultrathin barrier laminates and devices |
| WO2017057228A1 (ja) * | 2015-10-01 | 2017-04-06 | シャープ株式会社 | エレクトロルミネッセンス装置 |
| CN105405986A (zh) * | 2015-12-16 | 2016-03-16 | 张家港康得新光电材料有限公司 | 水汽阻隔膜、其制备方法与包含其的显示器 |
| US10354950B2 (en) * | 2016-02-25 | 2019-07-16 | Ferric Inc. | Systems and methods for microelectronics fabrication and packaging using a magnetic polymer |
| WO2017172531A1 (en) | 2016-04-01 | 2017-10-05 | 3M Innovative Properties Company | Roll-to-roll atomic layer deposition apparatus and method |
| US10049869B2 (en) * | 2016-09-30 | 2018-08-14 | Lam Research Corporation | Composite dielectric interface layers for interconnect structures |
| KR102799270B1 (ko) * | 2017-01-05 | 2025-04-23 | 주성엔지니어링(주) | 투습 방지막과 그 제조 방법 |
| US11769682B2 (en) | 2017-08-09 | 2023-09-26 | Asm Ip Holding B.V. | Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith |
| US11685991B2 (en) * | 2018-02-14 | 2023-06-27 | Asm Ip Holding B.V. | Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process |
| US10655217B2 (en) * | 2018-05-01 | 2020-05-19 | Spts Technologies Limited | Method of forming a passivation layer on a substrate |
| DE112019003547T5 (de) * | 2018-07-12 | 2021-03-25 | Lotus Applied Technology, Llc | Wasserunempfindliche verfahren zum bilden von metalloxidfilmen und damit in zusammenhang stehenden produkten |
| JP2020113494A (ja) * | 2019-01-16 | 2020-07-27 | セイコーエプソン株式会社 | 有機エレクトロルミネッセンス装置の製造方法 |
| KR102288163B1 (ko) * | 2019-03-08 | 2021-08-11 | (주)디엔에프 | 박막 내 금속 또는 금속 산화물을 포함하는 실리콘 금속 산화물 봉지막 및 이의 제조방법 |
| CN113906579B (zh) * | 2019-03-08 | 2025-02-11 | Dnf有限公司 | 硅金属氧化物封装膜及其制备方法 |
| KR102385042B1 (ko) * | 2020-03-20 | 2022-04-11 | 한양대학교 산학협력단 | 봉지막 및 그 제조방법 |
| EP4165225A1 (en) | 2020-06-10 | 2023-04-19 | 3M Innovative Properties Company | Roll-to-roll vapor deposition apparatus and method |
| JP2026067053A (ja) * | 2024-10-08 | 2026-04-20 | 株式会社オプトラン | 赤外線カットフィルタおよび赤外線カットフィルタを用いた撮像装置 |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FI119941B (fi) * | 1999-10-15 | 2009-05-15 | Asm Int | Menetelmä nanolaminaattien valmistamiseksi |
| WO1991002102A1 (fr) * | 1989-08-01 | 1991-02-21 | Asahi Glass Company Ltd. | Film base sur du dioxide de silicium et sa production |
| JP2917432B2 (ja) * | 1989-08-01 | 1999-07-12 | 旭硝子株式会社 | 電導性ガラスの製造方法 |
| KR0185716B1 (en) * | 1989-08-01 | 1999-05-01 | Asahi Glass Co Ltd | Laminated glass structure |
| JP4254236B2 (ja) * | 2000-12-12 | 2009-04-15 | コニカミノルタホールディングス株式会社 | 薄膜形成方法 |
| JP2005538921A (ja) | 2002-09-17 | 2005-12-22 | スリーエム イノベイティブ プロパティズ カンパニー | ポーラスな界面活性剤媒介金属酸化物フィルム |
| US7018713B2 (en) | 2003-04-02 | 2006-03-28 | 3M Innovative Properties Company | Flexible high-temperature ultrabarrier |
| WO2005074330A1 (en) | 2004-01-28 | 2005-08-11 | Agency For Science, Technology And Research | Multicolor organic light emitting devices |
| EP1731299A1 (en) * | 2004-03-31 | 2006-12-13 | Konica Minolta Holdings, Inc. | Transparent conductive film, method for producing transparent conductive film and organic electroluminescent device |
| US20050221021A1 (en) | 2004-03-31 | 2005-10-06 | Tokyo Electron Limited | Method and system for performing atomic layer deposition |
| US7687409B2 (en) * | 2005-03-29 | 2010-03-30 | Micron Technology, Inc. | Atomic layer deposited titanium silicon oxide films |
| KR100647702B1 (ko) * | 2005-09-15 | 2006-11-23 | 삼성에스디아이 주식회사 | 플렉시블 장치, 및 플렉시블 평판 표시장치 |
| US20090130414A1 (en) * | 2007-11-08 | 2009-05-21 | Air Products And Chemicals, Inc. | Preparation of A Metal-containing Film Via ALD or CVD Processes |
| JP5482656B2 (ja) | 2008-08-25 | 2014-05-07 | コニカミノルタ株式会社 | 耐候性物品、耐候性フィルム及び光学部材 |
| FR2936651B1 (fr) * | 2008-09-30 | 2011-04-08 | Commissariat Energie Atomique | Dispositif optoelectronique organique et son procede d'encapsulation. |
| US8939606B2 (en) * | 2010-02-26 | 2015-01-27 | Guardian Industries Corp. | Heatable lens for luminaires, and/or methods of making the same |
| US9254506B2 (en) * | 2010-07-02 | 2016-02-09 | 3M Innovative Properties Company | Moisture resistant coating for barrier films |
| WO2012020771A1 (ja) * | 2010-08-13 | 2012-02-16 | 旭硝子株式会社 | 積層体および積層体の製造方法 |
| US8101531B1 (en) * | 2010-09-23 | 2012-01-24 | Novellus Systems, Inc. | Plasma-activated deposition of conformal films |
-
2014
- 2014-02-26 EP EP14757288.7A patent/EP2922979B1/en active Active
- 2014-02-26 CN CN201480005971.3A patent/CN105143501B/zh active Active
- 2014-02-26 US US14/191,235 patent/US9263359B2/en active Active
- 2014-02-26 WO PCT/US2014/018765 patent/WO2014134204A1/en not_active Ceased
- 2014-02-26 KR KR1020157023229A patent/KR102213047B1/ko active Active
- 2014-02-26 JP JP2015559305A patent/JP6437463B2/ja active Active
-
2016
- 2016-02-16 US US15/044,890 patent/US20170025635A1/en not_active Abandoned
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2016515166A5 (enExample) | ||
| JP5929775B2 (ja) | ガスバリア性フィルムおよびその製造方法、ならびに前記ガスバリア性フィルムを含む電子デバイス | |
| KR102300403B1 (ko) | 박막 증착 방법 | |
| WO2007140376A3 (en) | A method for depositing and curing low-k films for gapfill and conformal film applications | |
| JP2019116097A5 (enExample) | ||
| JP6287858B2 (ja) | ガスバリア性フィルム、その製造方法、およびこれを用いた電子デバイス | |
| CN105246683A (zh) | 阻气性膜及其制造方法 | |
| WO2017023693A8 (en) | Compositions and methods for depositing silicon nitride films | |
| WO2019055393A8 (en) | Compositions and methods for depositing silicon-containing films | |
| CN104903090B (zh) | 气体阻隔性膜 | |
| US20150331153A1 (en) | Gas barrier film, and method for manufacturing same | |
| JP2010507259A5 (enExample) | ||
| JP2012504867A5 (enExample) | ||
| JP2013508563A5 (enExample) | ||
| KR20150125941A (ko) | 혼합된 금속-실리콘-산화물 장벽들 | |
| JP2012124492A5 (enExample) | ||
| CN105050808B (zh) | 层积体、阻隔膜及其制造方法 | |
| CN109071847B (zh) | 用于制备阻挡膜的方法 | |
| JP2013052561A (ja) | ガスバリア性フィルム及びガスバリア性フィルムの製造方法 | |
| JP2012091353A5 (enExample) | ||
| MY166453A (en) | Gas-barrier plastic molded product and manufacturing process therefor | |
| IL275283B1 (en) | Process for the generation of metal-containing films | |
| Lim et al. | Ultralow water permeation barrier films of triad a-SiN x: H/n-SiO x N y/h-SiO x structure for organic light-emitting diodes | |
| Kim et al. | A thin film encapsulation layer fabricated via initiated chemical vapor deposition and atomic layer deposition | |
| WO2016191194A8 (en) | Pentachlorodisilane |