JP2016515166A5 - - Google Patents

Download PDF

Info

Publication number
JP2016515166A5
JP2016515166A5 JP2015559305A JP2015559305A JP2016515166A5 JP 2016515166 A5 JP2016515166 A5 JP 2016515166A5 JP 2015559305 A JP2015559305 A JP 2015559305A JP 2015559305 A JP2015559305 A JP 2015559305A JP 2016515166 A5 JP2016515166 A5 JP 2016515166A5
Authority
JP
Japan
Prior art keywords
substrate
moisture
film
silicon
precursor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2015559305A
Other languages
English (en)
Japanese (ja)
Other versions
JP2016515166A (ja
JP6437463B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/US2014/018765 external-priority patent/WO2014134204A1/en
Publication of JP2016515166A publication Critical patent/JP2016515166A/ja
Publication of JP2016515166A5 publication Critical patent/JP2016515166A5/ja
Application granted granted Critical
Publication of JP6437463B2 publication Critical patent/JP6437463B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2015559305A 2013-02-27 2014-02-26 混合金属‐シリコン‐酸化物バリア Active JP6437463B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201361770230P 2013-02-27 2013-02-27
US61/770,230 2013-02-27
PCT/US2014/018765 WO2014134204A1 (en) 2013-02-27 2014-02-26 Mixed metal-silicon-oxide barriers

Publications (3)

Publication Number Publication Date
JP2016515166A JP2016515166A (ja) 2016-05-26
JP2016515166A5 true JP2016515166A5 (enExample) 2017-04-06
JP6437463B2 JP6437463B2 (ja) 2018-12-12

Family

ID=51388551

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2015559305A Active JP6437463B2 (ja) 2013-02-27 2014-02-26 混合金属‐シリコン‐酸化物バリア

Country Status (6)

Country Link
US (2) US9263359B2 (enExample)
EP (1) EP2922979B1 (enExample)
JP (1) JP6437463B2 (enExample)
KR (1) KR102213047B1 (enExample)
CN (1) CN105143501B (enExample)
WO (1) WO2014134204A1 (enExample)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102014211720A1 (de) * 2014-06-18 2015-12-24 Robert Bosch Gmbh Optikträger, Verfahren zur Herstellung eines Optikträgers, Vorrichtung zur Herstellung eines Optikträgers und Kamerasystem
KR102278917B1 (ko) * 2014-07-24 2021-07-20 오스람 오엘이디 게엠베하 배리어층을 형성하는 방법 및 상기 배리어층을 포함하는 지지체
DE102015102535B4 (de) * 2015-02-23 2023-08-03 Infineon Technologies Ag Verbundsystem und Verfahren zum haftenden Verbinden eines hygroskopischen Materials
JP6970022B2 (ja) 2015-06-29 2021-11-24 スリーエム イノベイティブ プロパティズ カンパニー 極薄バリア積層体及びデバイス
WO2017057228A1 (ja) * 2015-10-01 2017-04-06 シャープ株式会社 エレクトロルミネッセンス装置
CN105405986A (zh) * 2015-12-16 2016-03-16 张家港康得新光电材料有限公司 水汽阻隔膜、其制备方法与包含其的显示器
US10354950B2 (en) * 2016-02-25 2019-07-16 Ferric Inc. Systems and methods for microelectronics fabrication and packaging using a magnetic polymer
JP2019513189A (ja) 2016-04-01 2019-05-23 スリーエム イノベイティブ プロパティズ カンパニー ロールツーロール原子層堆積装置及び方法
US10049869B2 (en) * 2016-09-30 2018-08-14 Lam Research Corporation Composite dielectric interface layers for interconnect structures
KR102799270B1 (ko) * 2017-01-05 2025-04-23 주성엔지니어링(주) 투습 방지막과 그 제조 방법
US11769682B2 (en) 2017-08-09 2023-09-26 Asm Ip Holding B.V. Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
JP7124098B2 (ja) * 2018-02-14 2022-08-23 エーエスエム・アイピー・ホールディング・ベー・フェー 周期的堆積プロセスにより基材上にルテニウム含有膜を堆積させる方法
US10655217B2 (en) * 2018-05-01 2020-05-19 Spts Technologies Limited Method of forming a passivation layer on a substrate
US20200017970A1 (en) * 2018-07-12 2020-01-16 Lotus Applied Technology, Llc Water-insensitive methods of forming metal oxide films and products related thereto
JP2020113494A (ja) * 2019-01-16 2020-07-27 セイコーエプソン株式会社 有機エレクトロルミネッセンス装置の製造方法
KR102288163B1 (ko) * 2019-03-08 2021-08-11 (주)디엔에프 박막 내 금속 또는 금속 산화물을 포함하는 실리콘 금속 산화물 봉지막 및 이의 제조방법
CN113906579B (zh) * 2019-03-08 2025-02-11 Dnf有限公司 硅金属氧化物封装膜及其制备方法
KR102385042B1 (ko) * 2020-03-20 2022-04-11 한양대학교 산학협력단 봉지막 및 그 제조방법
EP4165225A1 (en) 2020-06-10 2023-04-19 3M Innovative Properties Company Roll-to-roll vapor deposition apparatus and method
JP2026067053A (ja) * 2024-10-08 2026-04-20 株式会社オプトラン 赤外線カットフィルタおよび赤外線カットフィルタを用いた撮像装置

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FI119941B (fi) 1999-10-15 2009-05-15 Asm Int Menetelmä nanolaminaattien valmistamiseksi
JPH0780692B2 (ja) * 1989-08-01 1995-08-30 旭硝子株式会社 電導性ガラス及びその製造方法
DE69027590T2 (de) 1989-08-01 1996-12-05 Asahi Glass Co Ltd Verfahren zur Herstellung von Schichten auf basis von Siliziumdioxyd mittels DC Sputtern und Target dafür
KR0185716B1 (en) * 1989-08-01 1999-05-01 Asahi Glass Co Ltd Laminated glass structure
US6835425B2 (en) * 2000-12-12 2004-12-28 Konica Corporation Layer-forming method using plasma state reactive gas
AU2003247771A1 (en) 2002-09-17 2004-04-08 3M Innovative Properties Company Porous surfactant mediated metal oxide films
US7018713B2 (en) 2003-04-02 2006-03-28 3M Innovative Properties Company Flexible high-temperature ultrabarrier
WO2005074330A1 (en) 2004-01-28 2005-08-11 Agency For Science, Technology And Research Multicolor organic light emitting devices
US20050221021A1 (en) 2004-03-31 2005-10-06 Tokyo Electron Limited Method and system for performing atomic layer deposition
US20080226924A1 (en) * 2004-03-31 2008-09-18 Yasushi Okubo Transparent Conductive Film, Method For Producing Transparent Conductive Film and Organic Electroluminescent Device
US7687409B2 (en) * 2005-03-29 2010-03-30 Micron Technology, Inc. Atomic layer deposited titanium silicon oxide films
KR100647702B1 (ko) * 2005-09-15 2006-11-23 삼성에스디아이 주식회사 플렉시블 장치, 및 플렉시블 평판 표시장치
US20090130414A1 (en) * 2007-11-08 2009-05-21 Air Products And Chemicals, Inc. Preparation of A Metal-containing Film Via ALD or CVD Processes
WO2010024193A1 (ja) 2008-08-25 2010-03-04 コニカミノルタホールディングス株式会社 耐候性物品、耐候性フィルム及び光学部材
FR2936651B1 (fr) * 2008-09-30 2011-04-08 Commissariat Energie Atomique Dispositif optoelectronique organique et son procede d'encapsulation.
US8939606B2 (en) * 2010-02-26 2015-01-27 Guardian Industries Corp. Heatable lens for luminaires, and/or methods of making the same
US9254506B2 (en) * 2010-07-02 2016-02-09 3M Innovative Properties Company Moisture resistant coating for barrier films
EP2604427A4 (en) * 2010-08-13 2014-12-24 Asahi Glass Co Ltd LAMINATE AND LAMINATE MANUFACTURING METHOD
US8101531B1 (en) * 2010-09-23 2012-01-24 Novellus Systems, Inc. Plasma-activated deposition of conformal films

Similar Documents

Publication Publication Date Title
JP5929775B2 (ja) ガスバリア性フィルムおよびその製造方法、ならびに前記ガスバリア性フィルムを含む電子デバイス
JP6504284B2 (ja) ガスバリア性フィルム、その製造方法、およびこれを用いた電子デバイス
KR102300403B1 (ko) 박막 증착 방법
WO2007140376A3 (en) A method for depositing and curing low-k films for gapfill and conformal film applications
JP2019116097A5 (enExample)
WO2017023693A8 (en) Compositions and methods for depositing silicon nitride films
WO2011084532A3 (en) Dielectric film formation using inert gas excitation
CN105246683A (zh) 阻气性膜及其制造方法
WO2019055393A8 (en) Compositions and methods for depositing silicon-containing films
US20150331153A1 (en) Gas barrier film, and method for manufacturing same
JP2010507259A5 (enExample)
JP2012504867A5 (enExample)
JP2013508563A5 (enExample)
KR20150125941A (ko) 혼합된 금속-실리콘-산화물 장벽들
JP2012124492A5 (enExample)
CN109071847B (zh) 用于制备阻挡膜的方法
JP2013052561A (ja) ガスバリア性フィルム及びガスバリア性フィルムの製造方法
JP2012091353A5 (enExample)
MY166453A (en) Gas-barrier plastic molded product and manufacturing process therefor
IL275283B1 (en) Process for the generation of metal-containing films
Lim et al. Ultralow water permeation barrier films of triad a-SiN x: H/n-SiO x N y/h-SiO x structure for organic light-emitting diodes
Kim et al. A thin film encapsulation layer fabricated via initiated chemical vapor deposition and atomic layer deposition
WO2016191194A8 (en) Pentachlorodisilane
CN104846350A (zh) 一种有机无机杂化的高阻隔膜及其制备方法
Wang et al. Realization of an autonomously controllable process for atomic layer deposition and its encapsulation application in flexible organic light-emitting diodes