JP2016512393A5 - - Google Patents

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Publication number
JP2016512393A5
JP2016512393A5 JP2016500279A JP2016500279A JP2016512393A5 JP 2016512393 A5 JP2016512393 A5 JP 2016512393A5 JP 2016500279 A JP2016500279 A JP 2016500279A JP 2016500279 A JP2016500279 A JP 2016500279A JP 2016512393 A5 JP2016512393 A5 JP 2016512393A5
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JP
Japan
Prior art keywords
conductive plate
plate
processing
substrate
dielectric
Prior art date
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Application number
JP2016500279A
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English (en)
Japanese (ja)
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JP6391662B2 (ja
JP2016512393A (ja
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Publication date
Priority claimed from US13/798,028 external-priority patent/US10593521B2/en
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Publication of JP2016512393A publication Critical patent/JP2016512393A/ja
Publication of JP2016512393A5 publication Critical patent/JP2016512393A5/ja
Application granted granted Critical
Publication of JP6391662B2 publication Critical patent/JP6391662B2/ja
Active legal-status Critical Current
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JP2016500279A 2013-03-12 2014-02-17 プラズマエッチング作業工程用の基板支持体 Active JP6391662B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/798,028 US10593521B2 (en) 2013-03-12 2013-03-12 Substrate support for plasma etch operations
US13/798,028 2013-03-12
PCT/US2014/016719 WO2014163800A1 (en) 2013-03-12 2014-02-17 Substrate support for plasma etch operations

Publications (3)

Publication Number Publication Date
JP2016512393A JP2016512393A (ja) 2016-04-25
JP2016512393A5 true JP2016512393A5 (enExample) 2017-03-23
JP6391662B2 JP6391662B2 (ja) 2018-09-19

Family

ID=51522153

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016500279A Active JP6391662B2 (ja) 2013-03-12 2014-02-17 プラズマエッチング作業工程用の基板支持体

Country Status (6)

Country Link
US (1) US10593521B2 (enExample)
JP (1) JP6391662B2 (enExample)
KR (1) KR102232796B1 (enExample)
CN (1) CN105122430B (enExample)
TW (1) TWI619164B (enExample)
WO (1) WO2014163800A1 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8999105B2 (en) * 2012-01-06 2015-04-07 President And Fellows Of Harvard College Small-scale fabrication systems and methods
US10622243B2 (en) 2016-10-28 2020-04-14 Lam Research Corporation Planar substrate edge contact with open volume equalization pathways and side containment
US11410867B2 (en) 2018-07-30 2022-08-09 Toto Ltd. Electrostatic chuck
JP7373111B2 (ja) * 2018-07-30 2023-11-02 Toto株式会社 静電チャック
JP6641608B1 (ja) * 2018-07-30 2020-02-05 Toto株式会社 静電チャック
JP6587223B1 (ja) * 2018-07-30 2019-10-09 Toto株式会社 静電チャック
CN110783162B (zh) * 2018-07-30 2024-02-13 Toto株式会社 静电吸盘
JP7371401B2 (ja) * 2019-09-05 2023-10-31 Toto株式会社 静電チャック
JP7400276B2 (ja) * 2019-09-05 2023-12-19 Toto株式会社 静電チャック
CN117059466A (zh) * 2023-10-13 2023-11-14 江苏邑文微电子科技有限公司 半导体沉积设备
WO2025170929A1 (en) * 2024-02-07 2025-08-14 Applied Materials, Inc. Substrate processing chambers having high conductance hardware

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US4692836A (en) * 1983-10-31 1987-09-08 Toshiba Kikai Kabushiki Kaisha Electrostatic chucks
JPS6095931A (ja) * 1983-10-31 1985-05-29 Toshiba Mach Co Ltd 静電チヤツク
JPS6369250A (ja) 1986-09-10 1988-03-29 Hitachi Electronics Eng Co Ltd 移動ステ−ジ機構
JPH0758083A (ja) * 1993-08-18 1995-03-03 Toshiba Corp 半導体製造装置
JP2659919B2 (ja) * 1994-01-13 1997-09-30 インターナショナル・ビジネス・マシーンズ・コーポレイション プラズマの不均一性を補正するプラズマ装置
US5688358A (en) * 1995-03-08 1997-11-18 Applied Materials, Inc. R.F. plasma reactor with larger-than-wafer pedestal conductor
TW334609B (en) * 1996-09-19 1998-06-21 Hitachi Ltd Electrostatic chuck, method and device for processing sanyle use the same
JP3207147B2 (ja) 1997-12-19 2001-09-10 日本エー・エス・エム株式会社 半導体処理用の基板保持装置
US6077353A (en) * 1998-06-02 2000-06-20 Applied Materials, Inc. Pedestal insulator for a pre-clean chamber
US6228438B1 (en) * 1999-08-10 2001-05-08 Unakis Balzers Aktiengesellschaft Plasma reactor for the treatment of large size substrates
US6693789B2 (en) 2000-04-05 2004-02-17 Sumitomo Osaka Cement Co., Ltd. Susceptor and manufacturing method thereof
JP2001308165A (ja) * 2000-04-19 2001-11-02 Sumitomo Osaka Cement Co Ltd サセプタ及びその製造方法
US6700397B2 (en) 2000-07-13 2004-03-02 The Micromanipulator Company, Inc. Triaxial probe assembly
JP2002134484A (ja) 2000-10-19 2002-05-10 Asm Japan Kk 半導体基板保持装置
US6652713B2 (en) * 2001-08-09 2003-11-25 Applied Materials, Inc. Pedestal with integral shield
KR20040049907A (ko) 2002-12-05 2004-06-14 삼성전자주식회사 프리크리닝 장치
WO2004090960A1 (ja) 2003-04-07 2004-10-21 Tokyo Electron Limited 載置台構造及びこの載置台構造を有する熱処理装置
JP4238772B2 (ja) * 2003-05-07 2009-03-18 東京エレクトロン株式会社 載置台構造及び熱処理装置
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JP5029089B2 (ja) * 2007-03-26 2012-09-19 東京エレクトロン株式会社 プラズマ処理装置用の載置台及びプラズマ処理装置
DE112008003535T5 (de) * 2007-12-28 2010-12-09 Shin-Etsu Handotai Co., Ltd. Suszeptor für das epitaxiale Wachstum
JP5312923B2 (ja) 2008-01-31 2013-10-09 大日本スクリーン製造株式会社 基板処理装置
US7674723B2 (en) * 2008-02-06 2010-03-09 Applied Materials, Inc. Plasma immersion ion implantation using an electrode with edge-effect suppression by a downwardly curving edge
JP2010021510A (ja) 2008-06-13 2010-01-28 Canon Anelva Corp 基板保持装置およびプラズマ処理装置
KR101227743B1 (ko) * 2008-09-16 2013-01-29 도쿄엘렉트론가부시키가이샤 기판 처리 장치 및 기판 배치대
JP5458050B2 (ja) * 2011-03-30 2014-04-02 日本碍子株式会社 静電チャックの製法

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