TWI619164B - 用於電漿蝕刻操作的基材支撐件 - Google Patents

用於電漿蝕刻操作的基材支撐件 Download PDF

Info

Publication number
TWI619164B
TWI619164B TW103104948A TW103104948A TWI619164B TW I619164 B TWI619164 B TW I619164B TW 103104948 A TW103104948 A TW 103104948A TW 103104948 A TW103104948 A TW 103104948A TW I619164 B TWI619164 B TW I619164B
Authority
TW
Taiwan
Prior art keywords
substrate support
top surface
substrate
dielectric
conductive plate
Prior art date
Application number
TW103104948A
Other languages
English (en)
Chinese (zh)
Other versions
TW201436034A (zh
Inventor
弗雷澤賴瑞
蔡振雄
福斯特約翰Ｃ
楊美寶
傑克森麥可Ｓ
Original Assignee
應用材料股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 應用材料股份有限公司 filed Critical 應用材料股份有限公司
Publication of TW201436034A publication Critical patent/TW201436034A/zh
Application granted granted Critical
Publication of TWI619164B publication Critical patent/TWI619164B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Plasma Technology (AREA)
TW103104948A 2013-03-12 2014-02-14 用於電漿蝕刻操作的基材支撐件 TWI619164B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/798,028 US10593521B2 (en) 2013-03-12 2013-03-12 Substrate support for plasma etch operations
US13/798,028 2013-03-12

Publications (2)

Publication Number Publication Date
TW201436034A TW201436034A (zh) 2014-09-16
TWI619164B true TWI619164B (zh) 2018-03-21

Family

ID=51522153

Family Applications (1)

Application Number Title Priority Date Filing Date
TW103104948A TWI619164B (zh) 2013-03-12 2014-02-14 用於電漿蝕刻操作的基材支撐件

Country Status (6)

Country Link
US (1) US10593521B2 (enExample)
JP (1) JP6391662B2 (enExample)
KR (1) KR102232796B1 (enExample)
CN (1) CN105122430B (enExample)
TW (1) TWI619164B (enExample)
WO (1) WO2014163800A1 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013147966A2 (en) * 2012-01-06 2013-10-03 President And Fellows Of Harvard College Small-scale fabrication systems and methods
US10622243B2 (en) * 2016-10-28 2020-04-14 Lam Research Corporation Planar substrate edge contact with open volume equalization pathways and side containment
JP6641608B1 (ja) * 2018-07-30 2020-02-05 Toto株式会社 静電チャック
CN110783162B (zh) * 2018-07-30 2024-02-13 Toto株式会社 静电吸盘
JP7373111B2 (ja) * 2018-07-30 2023-11-02 Toto株式会社 静電チャック
US11410867B2 (en) 2018-07-30 2022-08-09 Toto Ltd. Electrostatic chuck
JP6587223B1 (ja) * 2018-07-30 2019-10-09 Toto株式会社 静電チャック
JP7371401B2 (ja) * 2019-09-05 2023-10-31 Toto株式会社 静電チャック
JP7400276B2 (ja) * 2019-09-05 2023-12-19 Toto株式会社 静電チャック
CN117059466A (zh) * 2023-10-13 2023-11-14 江苏邑文微电子科技有限公司 半导体沉积设备
WO2025170929A1 (en) * 2024-02-07 2025-08-14 Applied Materials, Inc. Substrate processing chambers having high conductance hardware

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4692836A (en) * 1983-10-31 1987-09-08 Toshiba Kikai Kabushiki Kaisha Electrostatic chucks
US5716486A (en) * 1994-01-13 1998-02-10 Selwyn; Gary S. Method and apparatus for tuning field for plasma processing using corrected electrode
US6077353A (en) * 1998-06-02 2000-06-20 Applied Materials, Inc. Pedestal insulator for a pre-clean chamber
US20040250955A1 (en) * 2003-06-12 2004-12-16 Applied Materials, Inc. RF current return path for a large area substrate plasma reactor
US20110073037A1 (en) * 2007-12-28 2011-03-31 Shin-Etsu Handotai Co., Ltd. Epitaxial growth susceptor
US20110222038A1 (en) * 2008-09-16 2011-09-15 Tokyo Electron Limited Substrate processing apparatus and substrate placing table
US20120250212A1 (en) * 2011-03-30 2012-10-04 Ngk Insulators, Ltd. Method for producing electrostatic chuck and electrostatic chuck

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6095931A (ja) * 1983-10-31 1985-05-29 Toshiba Mach Co Ltd 静電チヤツク
JPS6369250A (ja) 1986-09-10 1988-03-29 Hitachi Electronics Eng Co Ltd 移動ステ−ジ機構
JPH0758083A (ja) * 1993-08-18 1995-03-03 Toshiba Corp 半導体製造装置
US5688358A (en) * 1995-03-08 1997-11-18 Applied Materials, Inc. R.F. plasma reactor with larger-than-wafer pedestal conductor
TW334609B (en) * 1996-09-19 1998-06-21 Hitachi Ltd Electrostatic chuck, method and device for processing sanyle use the same
JP3207147B2 (ja) * 1997-12-19 2001-09-10 日本エー・エス・エム株式会社 半導体処理用の基板保持装置
US6228438B1 (en) * 1999-08-10 2001-05-08 Unakis Balzers Aktiengesellschaft Plasma reactor for the treatment of large size substrates
JP2001308165A (ja) * 2000-04-19 2001-11-02 Sumitomo Osaka Cement Co Ltd サセプタ及びその製造方法
US6693789B2 (en) 2000-04-05 2004-02-17 Sumitomo Osaka Cement Co., Ltd. Susceptor and manufacturing method thereof
US6700397B2 (en) 2000-07-13 2004-03-02 The Micromanipulator Company, Inc. Triaxial probe assembly
JP2002134484A (ja) 2000-10-19 2002-05-10 Asm Japan Kk 半導体基板保持装置
US6652713B2 (en) * 2001-08-09 2003-11-25 Applied Materials, Inc. Pedestal with integral shield
KR20040049907A (ko) 2002-12-05 2004-06-14 삼성전자주식회사 프리크리닝 장치
WO2004090960A1 (ja) 2003-04-07 2004-10-21 Tokyo Electron Limited 載置台構造及びこの載置台構造を有する熱処理装置
JP4238772B2 (ja) * 2003-05-07 2009-03-18 東京エレクトロン株式会社 載置台構造及び熱処理装置
JP5029089B2 (ja) * 2007-03-26 2012-09-19 東京エレクトロン株式会社 プラズマ処理装置用の載置台及びプラズマ処理装置
JP5312923B2 (ja) 2008-01-31 2013-10-09 大日本スクリーン製造株式会社 基板処理装置
US7674723B2 (en) * 2008-02-06 2010-03-09 Applied Materials, Inc. Plasma immersion ion implantation using an electrode with edge-effect suppression by a downwardly curving edge
JP2010021510A (ja) 2008-06-13 2010-01-28 Canon Anelva Corp 基板保持装置およびプラズマ処理装置

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4692836A (en) * 1983-10-31 1987-09-08 Toshiba Kikai Kabushiki Kaisha Electrostatic chucks
US5716486A (en) * 1994-01-13 1998-02-10 Selwyn; Gary S. Method and apparatus for tuning field for plasma processing using corrected electrode
US6077353A (en) * 1998-06-02 2000-06-20 Applied Materials, Inc. Pedestal insulator for a pre-clean chamber
US20040250955A1 (en) * 2003-06-12 2004-12-16 Applied Materials, Inc. RF current return path for a large area substrate plasma reactor
US20110073037A1 (en) * 2007-12-28 2011-03-31 Shin-Etsu Handotai Co., Ltd. Epitaxial growth susceptor
US20110222038A1 (en) * 2008-09-16 2011-09-15 Tokyo Electron Limited Substrate processing apparatus and substrate placing table
US20120250212A1 (en) * 2011-03-30 2012-10-04 Ngk Insulators, Ltd. Method for producing electrostatic chuck and electrostatic chuck

Also Published As

Publication number Publication date
CN105122430A (zh) 2015-12-02
KR102232796B1 (ko) 2021-03-25
CN105122430B (zh) 2018-12-21
JP6391662B2 (ja) 2018-09-19
WO2014163800A1 (en) 2014-10-09
US10593521B2 (en) 2020-03-17
KR20150129814A (ko) 2015-11-20
JP2016512393A (ja) 2016-04-25
TW201436034A (zh) 2014-09-16
US20140262043A1 (en) 2014-09-18

Similar Documents

Publication Publication Date Title
TWI619164B (zh) 用於電漿蝕刻操作的基材支撐件
TWI861122B (zh) 載置台及電漿處理裝置
KR102356211B1 (ko) 에칭 방법
KR102364322B1 (ko) 에칭 방법
TWI870500B (zh) 膜之蝕刻方法及電漿處理裝置
TWI851651B (zh) 基板支撐組件、處理腔室、及處理基板的方法
KR102364434B1 (ko) 에칭 방법
CN112447484B (zh) 等离子体处理装置、处理方法及上部电极构造
JP6159172B2 (ja) 温度制御方法及びプラズマ処理装置
CN105283944A (zh) 用于边缘关键尺寸均匀性控制的工艺套件
CN113903647B (zh) 边缘环和蚀刻装置
JP5933222B2 (ja) 温度制御方法、制御装置及びプラズマ処理装置
CN105702572B (zh) 等离子体蚀刻方法
JP2016207788A (ja) 上部電極の表面処理方法、プラズマ処理装置及び上部電極
KR102735318B1 (ko) 클리닝 방법 및 플라즈마 처리 장치
TW202020973A (zh) 具有整合加熱器的腔室蓋
JP5171584B2 (ja) 基板処理装置の基板載置台、基板処理装置及び半導体デバイスの製造方法
JP2021012960A (ja) プラズマ処理装置
JP7229033B2 (ja) 基板処理方法及び基板処理装置
TW202205348A (zh) 邊緣環及電漿處理裝置
TW202215528A (zh) 蝕刻方法及蝕刻裝置