KR102232796B1 - 플라즈마 에칭 작업용 기판 지지부 - Google Patents

플라즈마 에칭 작업용 기판 지지부 Download PDF

Info

Publication number
KR102232796B1
KR102232796B1 KR1020157028684A KR20157028684A KR102232796B1 KR 102232796 B1 KR102232796 B1 KR 102232796B1 KR 1020157028684 A KR1020157028684 A KR 1020157028684A KR 20157028684 A KR20157028684 A KR 20157028684A KR 102232796 B1 KR102232796 B1 KR 102232796B1
Authority
KR
South Korea
Prior art keywords
substrate support
conductive plate
substrate
top surface
dielectric
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020157028684A
Other languages
English (en)
Korean (ko)
Other versions
KR20150129814A (ko
Inventor
래리 프레이저
청-슝 매튜 차이
존 씨. 포스터
메이 포 융
마이클 에스. 잭슨
Original Assignee
어플라이드 머티어리얼스, 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 어플라이드 머티어리얼스, 인코포레이티드 filed Critical 어플라이드 머티어리얼스, 인코포레이티드
Publication of KR20150129814A publication Critical patent/KR20150129814A/ko
Application granted granted Critical
Publication of KR102232796B1 publication Critical patent/KR102232796B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Plasma Technology (AREA)
KR1020157028684A 2013-03-12 2014-02-17 플라즈마 에칭 작업용 기판 지지부 Active KR102232796B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/798,028 US10593521B2 (en) 2013-03-12 2013-03-12 Substrate support for plasma etch operations
US13/798,028 2013-03-12
PCT/US2014/016719 WO2014163800A1 (en) 2013-03-12 2014-02-17 Substrate support for plasma etch operations

Publications (2)

Publication Number Publication Date
KR20150129814A KR20150129814A (ko) 2015-11-20
KR102232796B1 true KR102232796B1 (ko) 2021-03-25

Family

ID=51522153

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020157028684A Active KR102232796B1 (ko) 2013-03-12 2014-02-17 플라즈마 에칭 작업용 기판 지지부

Country Status (6)

Country Link
US (1) US10593521B2 (enExample)
JP (1) JP6391662B2 (enExample)
KR (1) KR102232796B1 (enExample)
CN (1) CN105122430B (enExample)
TW (1) TWI619164B (enExample)
WO (1) WO2014163800A1 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8999105B2 (en) * 2012-01-06 2015-04-07 President And Fellows Of Harvard College Small-scale fabrication systems and methods
US10622243B2 (en) 2016-10-28 2020-04-14 Lam Research Corporation Planar substrate edge contact with open volume equalization pathways and side containment
JP6587223B1 (ja) * 2018-07-30 2019-10-09 Toto株式会社 静電チャック
JP7373111B2 (ja) * 2018-07-30 2023-11-02 Toto株式会社 静電チャック
US11410867B2 (en) 2018-07-30 2022-08-09 Toto Ltd. Electrostatic chuck
CN110783162B (zh) * 2018-07-30 2024-02-13 Toto株式会社 静电吸盘
JP6641608B1 (ja) * 2018-07-30 2020-02-05 Toto株式会社 静電チャック
JP7400276B2 (ja) * 2019-09-05 2023-12-19 Toto株式会社 静電チャック
JP7371401B2 (ja) * 2019-09-05 2023-10-31 Toto株式会社 静電チャック
CN117059466A (zh) * 2023-10-13 2023-11-14 江苏邑文微电子科技有限公司 半导体沉积设备
WO2025170929A1 (en) * 2024-02-07 2025-08-14 Applied Materials, Inc. Substrate processing chambers having high conductance hardware

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6095931A (ja) * 1983-10-31 1985-05-29 Toshiba Mach Co Ltd 静電チヤツク
US4692836A (en) * 1983-10-31 1987-09-08 Toshiba Kikai Kabushiki Kaisha Electrostatic chucks
JPS6369250A (ja) 1986-09-10 1988-03-29 Hitachi Electronics Eng Co Ltd 移動ステ−ジ機構
JPH0758083A (ja) * 1993-08-18 1995-03-03 Toshiba Corp 半導体製造装置
JP2659919B2 (ja) * 1994-01-13 1997-09-30 インターナショナル・ビジネス・マシーンズ・コーポレイション プラズマの不均一性を補正するプラズマ装置
US5688358A (en) * 1995-03-08 1997-11-18 Applied Materials, Inc. R.F. plasma reactor with larger-than-wafer pedestal conductor
TW334609B (en) * 1996-09-19 1998-06-21 Hitachi Ltd Electrostatic chuck, method and device for processing sanyle use the same
JP3207147B2 (ja) * 1997-12-19 2001-09-10 日本エー・エス・エム株式会社 半導体処理用の基板保持装置
US6077353A (en) * 1998-06-02 2000-06-20 Applied Materials, Inc. Pedestal insulator for a pre-clean chamber
US6228438B1 (en) * 1999-08-10 2001-05-08 Unakis Balzers Aktiengesellschaft Plasma reactor for the treatment of large size substrates
JP2001308165A (ja) * 2000-04-19 2001-11-02 Sumitomo Osaka Cement Co Ltd サセプタ及びその製造方法
US6693789B2 (en) 2000-04-05 2004-02-17 Sumitomo Osaka Cement Co., Ltd. Susceptor and manufacturing method thereof
US6700397B2 (en) 2000-07-13 2004-03-02 The Micromanipulator Company, Inc. Triaxial probe assembly
JP2002134484A (ja) 2000-10-19 2002-05-10 Asm Japan Kk 半導体基板保持装置
US6652713B2 (en) * 2001-08-09 2003-11-25 Applied Materials, Inc. Pedestal with integral shield
KR20040049907A (ko) 2002-12-05 2004-06-14 삼성전자주식회사 프리크리닝 장치
WO2004090960A1 (ja) 2003-04-07 2004-10-21 Tokyo Electron Limited 載置台構造及びこの載置台構造を有する熱処理装置
JP4238772B2 (ja) * 2003-05-07 2009-03-18 東京エレクトロン株式会社 載置台構造及び熱処理装置
US7083702B2 (en) * 2003-06-12 2006-08-01 Applied Materials, Inc. RF current return path for a large area substrate plasma reactor
JP5029089B2 (ja) * 2007-03-26 2012-09-19 東京エレクトロン株式会社 プラズマ処理装置用の載置台及びプラズマ処理装置
KR101516164B1 (ko) * 2007-12-28 2015-05-04 신에쯔 한도타이 가부시키가이샤 에피텍셜 성장용 서셉터
JP5312923B2 (ja) 2008-01-31 2013-10-09 大日本スクリーン製造株式会社 基板処理装置
US7674723B2 (en) * 2008-02-06 2010-03-09 Applied Materials, Inc. Plasma immersion ion implantation using an electrode with edge-effect suppression by a downwardly curving edge
JP2010021510A (ja) 2008-06-13 2010-01-28 Canon Anelva Corp 基板保持装置およびプラズマ処理装置
KR101227743B1 (ko) * 2008-09-16 2013-01-29 도쿄엘렉트론가부시키가이샤 기판 처리 장치 및 기판 배치대
JP5458050B2 (ja) * 2011-03-30 2014-04-02 日本碍子株式会社 静電チャックの製法

Also Published As

Publication number Publication date
TWI619164B (zh) 2018-03-21
US20140262043A1 (en) 2014-09-18
JP6391662B2 (ja) 2018-09-19
TW201436034A (zh) 2014-09-16
CN105122430A (zh) 2015-12-02
KR20150129814A (ko) 2015-11-20
WO2014163800A1 (en) 2014-10-09
JP2016512393A (ja) 2016-04-25
CN105122430B (zh) 2018-12-21
US10593521B2 (en) 2020-03-17

Similar Documents

Publication Publication Date Title
KR102232796B1 (ko) 플라즈마 에칭 작업용 기판 지지부
EP3133635B1 (en) Edge ring assembly for improving feature profile tilting at extreme edge of wafer
KR102614244B1 (ko) 플라즈마 처리 장치 및 플라즈마 처리 방법
CN112447484B (zh) 等离子体处理装置、处理方法及上部电极构造
KR20100128238A (ko) 플라즈마 처리용 원환 형상 부품 및 플라즈마 처리 장치
CN105283944A (zh) 用于边缘关键尺寸均匀性控制的工艺套件
WO2015018316A1 (zh) 预清洗腔室及半导体加工设备
CN113903647B (zh) 边缘环和蚀刻装置
CN102017122A (zh) 低轮廓性的工艺套组
US20200328105A1 (en) Substrate processing apparatus including edge ring
KR102350148B1 (ko) 플라즈마 처리 방법
CN111180305A (zh) 在icp等离子体处理腔室中用于高产出、衬底极端边缘缺陷减少的单环设计
KR20150001664A (ko) 온도 제어 방법 및 플라즈마 처리 장치
TWI719958B (zh) 電漿蝕刻方法
KR102799000B1 (ko) 플라즈마 처리 장치
TW201937597A (zh) 清洗方法及電漿處理裝置
JP7471810B2 (ja) リングアセンブリ、基板支持体及び基板処理装置
CN107403750B (zh) 基座组件及反应腔室
JP7605695B2 (ja) エッジリング及びエッチング装置
KR102904930B1 (ko) 플라즈마 처리 장치, 처리 방법 및 상부 전극 구조
TW202205348A (zh) 邊緣環及電漿處理裝置

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

R15-X000 Change to inventor requested

St.27 status event code: A-3-3-R10-R15-oth-X000

R16-X000 Change to inventor recorded

St.27 status event code: A-3-3-R10-R16-oth-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

A201 Request for examination
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

R17 Change to representative recorded

Free format text: ST27 STATUS EVENT CODE: A-5-5-R10-R17-OTH-X000 (AS PROVIDED BY THE NATIONAL OFFICE)

R17-X000 Change to representative recorded

St.27 status event code: A-5-5-R10-R17-oth-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6