JP2016509743A - 光抽出層を有する柔軟な密封性薄膜 - Google Patents
光抽出層を有する柔軟な密封性薄膜 Download PDFInfo
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- JP2016509743A JP2016509743A JP2015555224A JP2015555224A JP2016509743A JP 2016509743 A JP2016509743 A JP 2016509743A JP 2015555224 A JP2015555224 A JP 2015555224A JP 2015555224 A JP2015555224 A JP 2015555224A JP 2016509743 A JP2016509743 A JP 2016509743A
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- 238000000605 extraction Methods 0.000 title claims abstract description 59
- 238000007789 sealing Methods 0.000 title description 2
- 230000004888 barrier function Effects 0.000 claims abstract description 77
- 239000000758 substrate Substances 0.000 claims abstract description 45
- 239000011521 glass Substances 0.000 claims abstract description 35
- 239000011159 matrix material Substances 0.000 claims abstract description 33
- 239000002245 particle Substances 0.000 claims abstract description 28
- 239000000463 material Substances 0.000 claims abstract description 27
- GCFDVEHYSAUQGL-UHFFFAOYSA-J fluoro-dioxido-oxo-$l^{5}-phosphane;tin(4+) Chemical compound [Sn+4].[O-]P([O-])(F)=O.[O-]P([O-])(F)=O GCFDVEHYSAUQGL-UHFFFAOYSA-J 0.000 claims abstract description 15
- 239000005303 fluorophosphate glass Substances 0.000 claims abstract description 14
- 239000005385 borate glass Substances 0.000 claims abstract description 5
- 239000005387 chalcogenide glass Substances 0.000 claims abstract description 5
- SITVSCPRJNYAGV-UHFFFAOYSA-L tellurite Chemical compound [O-][Te]([O-])=O SITVSCPRJNYAGV-UHFFFAOYSA-L 0.000 claims abstract description 5
- 239000005365 phosphate glass Substances 0.000 claims abstract description 4
- 229910052760 oxygen Inorganic materials 0.000 claims description 8
- 229910052718 tin Inorganic materials 0.000 claims description 7
- 229910052731 fluorine Inorganic materials 0.000 claims description 4
- 229910052698 phosphorus Inorganic materials 0.000 claims description 4
- 229910052758 niobium Inorganic materials 0.000 claims description 3
- 230000003287 optical effect Effects 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 164
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- 238000010586 diagram Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 238000005452 bending Methods 0.000 description 5
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- 239000004743 Polypropylene Substances 0.000 description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 229920001155 polypropylene Polymers 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910008449 SnF 2 Inorganic materials 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 229910010272 inorganic material Inorganic materials 0.000 description 3
- 239000011147 inorganic material Substances 0.000 description 3
- 239000010955 niobium Substances 0.000 description 3
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 3
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 3
- 239000004926 polymethyl methacrylate Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229920012266 Poly(ether sulfone) PES Polymers 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
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- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 239000004417 polycarbonate Substances 0.000 description 2
- 229920000515 polycarbonate Polymers 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
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- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- 230000005068 transpiration Effects 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910001928 zirconium oxide Inorganic materials 0.000 description 2
- 206010067484 Adverse reaction Diseases 0.000 description 1
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 1
- 239000005751 Copper oxide Substances 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 102220575517 Glutamate receptor ionotropic, NMDA 2A_Q56A_mutation Human genes 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 239000007983 Tris buffer Substances 0.000 description 1
- 230000006838 adverse reaction Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
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- 238000003486 chemical etching Methods 0.000 description 1
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- 239000000945 filler Substances 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 239000005350 fused silica glass Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000010954 inorganic particle Substances 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical group [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000013081 microcrystal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 229910000484 niobium oxide Inorganic materials 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- 238000000879 optical micrograph Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910002077 partially stabilized zirconia Inorganic materials 0.000 description 1
- 238000005424 photoluminescence Methods 0.000 description 1
- 238000013001 point bending Methods 0.000 description 1
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- 238000007788 roughening Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
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- 239000004416 thermosoftening plastic Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- QUBMWJKTLKIJNN-UHFFFAOYSA-B tin(4+);tetraphosphate Chemical compound [Sn+4].[Sn+4].[Sn+4].[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O QUBMWJKTLKIJNN-UHFFFAOYSA-B 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
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- 238000007740 vapor deposition Methods 0.000 description 1
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- 239000011787 zinc oxide Substances 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/875—Arrangements for extracting light from the devices
- H10K59/877—Arrangements for extracting light from the devices comprising scattering means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/854—Arrangements for extracting light from the devices comprising scattering means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/873—Encapsulations
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- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Glass Compositions (AREA)
Abstract
Description
4 活性層
4a 電子輸送層
4b 正孔輸送層
6 底部電極
8 バリア層
9 AlQ3層
10 支持基板
12 光抽出層
14 散乱性粒子
14a 多結晶性ドメイン
15 オイル層
16 マトリックス材料
200 OLED装置
300 ボトムエミッション型OLED構造
400 トップエミッション型装置
Claims (5)
- 基板上に提供された装置構造体と、
該有機発光ダイオード構造体の少なくとも一部を覆うように形成された密封性バリア層と、
光抽出層と、
を含む、保護された光学装置であって、
前記バリア層が、スズ‐フルオロリン酸塩ガラス、タングステンをドープしたスズ‐フルオロリン酸塩ガラス、カルコゲナイドガラス、テルライトガラス、ホウ酸塩ガラスおよびリン酸塩ガラスからなる群より選択されるガラス材料を含み、前記光抽出層が、マトリックス材料と、散乱層とを含み、該散乱層が、該マトリックス材料全体に分散された散乱性粒子および粗化された表面からなる群より選択される装置。 - 前記装置構造体が有機発光ダイオードを含む、請求項1記載の装置。
- 前記基板が柔軟な基板である、請求項1記載の装置。
- 前記バリア層が、
20〜75質量%のSnと、
2〜20質量%のPと、
10〜36質量%のOと、
10〜36質量%のFと、
0〜5質量%のNbと
を含むガラス材料を含む、請求項1記載の装置。 - 前記バリア層が、
55〜75質量%のSnと、
4〜14質量%のPと、
6〜24質量%のOと、
4〜22質量%のFと、
0.15〜15質量%のWと
を含むガラス材料を含む、請求項1記載の装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/751,638 US8754434B1 (en) | 2013-01-28 | 2013-01-28 | Flexible hermetic thin film with light extraction layer |
US13/751,638 | 2013-01-28 | ||
PCT/US2014/012436 WO2014116630A1 (en) | 2013-01-28 | 2014-01-22 | Flexible hermetic thin film with light extraction layer |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2016509743A true JP2016509743A (ja) | 2016-03-31 |
Family
ID=50031642
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015555224A Pending JP2016509743A (ja) | 2013-01-28 | 2014-01-22 | 光抽出層を有する柔軟な密封性薄膜 |
Country Status (7)
Country | Link |
---|---|
US (2) | US8754434B1 (ja) |
EP (1) | EP2948993B1 (ja) |
JP (1) | JP2016509743A (ja) |
KR (1) | KR102127295B1 (ja) |
CN (1) | CN105190931B (ja) |
TW (1) | TWI627775B (ja) |
WO (1) | WO2014116630A1 (ja) |
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CN105122491B (zh) * | 2013-03-12 | 2019-06-07 | Vitro可变资本股份有限公司 | 具光提取层的有机发光二极管 |
WO2014141330A1 (ja) * | 2013-03-13 | 2014-09-18 | パナソニック株式会社 | 電子デバイス |
KR20140120541A (ko) * | 2013-04-03 | 2014-10-14 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 그 제조 방법 |
KR102072805B1 (ko) * | 2013-04-15 | 2020-02-04 | 삼성디스플레이 주식회사 | 유기발광표시장치 및 그의 제조방법 |
CN105325056B (zh) * | 2013-06-18 | 2017-09-08 | 柯尼卡美能达株式会社 | 有机发光元件 |
KR20150012540A (ko) * | 2013-07-25 | 2015-02-04 | 삼성디스플레이 주식회사 | 유기발광표시장치의 제조방법. |
KR20150018246A (ko) * | 2013-08-09 | 2015-02-23 | 한국전자통신연구원 | 유기발광 다이오드 및 이의 제조 방법 |
US9484553B2 (en) * | 2013-09-25 | 2016-11-01 | Boe Technology Group Co., Ltd. | Organic light-emitting diode device and manufacturing method thereof |
WO2016047970A2 (ko) * | 2014-09-25 | 2016-03-31 | 코닝정밀소재 주식회사 | 유기발광소자용 광추출 기판 및 이를 포함하는 유기발광소자 |
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KR20170132257A (ko) | 2015-03-31 | 2017-12-01 | 코닝 인코포레이티드 | 광 산란 표면을 포함하는 도파관 및 이를 포함하는 디스플레이 장치 |
KR102434699B1 (ko) * | 2015-07-31 | 2022-08-22 | 삼성전자주식회사 | 확산방지층을 포함하는 다층구조체 및 이를 구비하는 소자 |
US10109821B2 (en) | 2015-09-23 | 2018-10-23 | Corning Incorporated | OLED light extraction using nanostructured coatings |
CN105226198A (zh) * | 2015-10-13 | 2016-01-06 | 京东方科技集团股份有限公司 | 一种防水增透型柔性oled器件装置及其制备方法 |
US9978990B2 (en) | 2016-07-12 | 2018-05-22 | Corning Incorporated | Waveguides comprising light extraction nanostructures and display devices comprising the same |
JP6740762B2 (ja) * | 2016-07-13 | 2020-08-19 | 日亜化学工業株式会社 | 発光装置およびその製造方法 |
CN106784364B (zh) * | 2016-11-28 | 2019-03-01 | 深圳市华星光电技术有限公司 | 一种有机电致发光器件及其制备方法 |
CN107316882A (zh) * | 2017-06-09 | 2017-11-03 | 深圳市华星光电技术有限公司 | Oled拼接显示面板 |
CN107946476A (zh) * | 2017-11-29 | 2018-04-20 | 信利(惠州)智能显示有限公司 | 有机发光显示装置 |
CN110056786A (zh) * | 2018-01-18 | 2019-07-26 | 展晶科技(深圳)有限公司 | 可挠式超薄发光体结构及其制作方法 |
US11251406B2 (en) * | 2019-03-07 | 2022-02-15 | Vitro Flat Glass Llc | Borosilicate light extraction region |
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KR102127295B1 (ko) | 2020-06-29 |
CN105190931A (zh) | 2015-12-23 |
EP2948993A1 (en) | 2015-12-02 |
US8946754B2 (en) | 2015-02-03 |
KR20150111960A (ko) | 2015-10-06 |
TW201444138A (zh) | 2014-11-16 |
WO2014116630A1 (en) | 2014-07-31 |
EP2948993B1 (en) | 2018-02-21 |
CN105190931B (zh) | 2017-08-04 |
US20140291656A1 (en) | 2014-10-02 |
TWI627775B (zh) | 2018-06-21 |
US8754434B1 (en) | 2014-06-17 |
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