JP2016508284A5 - - Google Patents

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Publication number
JP2016508284A5
JP2016508284A5 JP2015544198A JP2015544198A JP2016508284A5 JP 2016508284 A5 JP2016508284 A5 JP 2016508284A5 JP 2015544198 A JP2015544198 A JP 2015544198A JP 2015544198 A JP2015544198 A JP 2015544198A JP 2016508284 A5 JP2016508284 A5 JP 2016508284A5
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JP
Japan
Prior art keywords
parallel
fuses
fusing
measuring
field effect
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Application number
JP2015544198A
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English (en)
Japanese (ja)
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JP2016508284A (ja
JP6276905B2 (ja
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Priority claimed from PCT/US2013/072111 external-priority patent/WO2014082098A1/en
Publication of JP2016508284A publication Critical patent/JP2016508284A/ja
Publication of JP2016508284A5 publication Critical patent/JP2016508284A5/ja
Application granted granted Critical
Publication of JP6276905B2 publication Critical patent/JP6276905B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2015544198A 2012-11-26 2013-11-26 縦型半導体装置の性能を精確に強化するための装置アーキテクチャおよび方法 Expired - Fee Related JP6276905B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201261729720P 2012-11-26 2012-11-26
US61/729,720 2012-11-26
PCT/US2013/072111 WO2014082098A1 (en) 2012-11-26 2013-11-26 Device architecture and method for precision enhancement of vertical semiconductor devices

Publications (3)

Publication Number Publication Date
JP2016508284A JP2016508284A (ja) 2016-03-17
JP2016508284A5 true JP2016508284A5 (enExample) 2017-03-09
JP6276905B2 JP6276905B2 (ja) 2018-02-07

Family

ID=50772486

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2015544198A Expired - Fee Related JP6276905B2 (ja) 2012-11-26 2013-11-26 縦型半導体装置の性能を精確に強化するための装置アーキテクチャおよび方法

Country Status (7)

Country Link
US (3) US9117709B2 (enExample)
EP (1) EP2923375A4 (enExample)
JP (1) JP6276905B2 (enExample)
KR (1) KR20150092212A (enExample)
CN (2) CN105051876B (enExample)
MY (1) MY170333A (enExample)
WO (1) WO2014082098A1 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9704598B2 (en) * 2014-12-27 2017-07-11 Intel Corporation Use of in-field programmable fuses in the PCH dye
CN109417019B (zh) 2016-07-04 2023-12-05 三菱电机株式会社 半导体装置的制造方法
WO2018125110A1 (en) * 2016-12-29 2018-07-05 Intel Corporation Configurable resistor
CN107065997B (zh) * 2017-02-09 2018-10-26 张帅 修调功率器件输入电阻的控制方法
CN107769767B (zh) * 2017-10-16 2021-03-09 苏州浪潮智能科技有限公司 一种电阻修调电路及方法
US10650888B1 (en) * 2018-12-26 2020-05-12 Micron Technology, Inc. Tuning voltages in a read circuit
CN113678241B (zh) * 2019-04-08 2023-10-03 罗姆股份有限公司 器件参数的测量方法
CN115461847A (zh) * 2021-03-31 2022-12-09 华为技术有限公司 一种场效应晶体管、其制作方法、开关电路及电路板
JP7775618B2 (ja) * 2021-10-05 2025-11-26 富士電機株式会社 デバイス、半導体装置、ゲートドライバ、および、パワーモジュール
CN115684864B (zh) * 2023-01-05 2023-03-31 佛山市联动科技股份有限公司 适于开关时间测试和阈值电压测试的测试电路及测试方法

Family Cites Families (16)

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DE3532383A1 (de) * 1985-09-11 1987-03-19 Bosch Gmbh Robert Multizellentransistor
US4779060A (en) * 1987-06-01 1988-10-18 Gentron Corporation Linear power amplifying system
JP2664793B2 (ja) * 1990-04-06 1997-10-22 株式会社東芝 半導体装置の製造方法
US5446310A (en) * 1992-06-08 1995-08-29 North Carolina State University Integrated circuit power device with external disabling of defective devices and method of fabricating same
US5563447A (en) * 1993-09-07 1996-10-08 Delco Electronics Corp. High power semiconductor switch module
JPH08316327A (ja) * 1995-05-18 1996-11-29 Sony Corp 半導体装置の製造方法
GB9605672D0 (en) * 1996-03-18 1996-05-22 Westinghouse Brake & Signal Insulated gate bipolar transistors
KR100251528B1 (ko) * 1997-10-22 2000-04-15 김덕중 복수개의 센스 소오스 패드를 구비한 센스 전계효과 트랜지스터
US20050007160A1 (en) * 2003-07-10 2005-01-13 Neff Robert M. R. Tunable differential transconductor and adjustment method
US7271643B2 (en) * 2005-05-26 2007-09-18 International Business Machines Corporation Circuit for blowing an electrically blowable fuse in SOI technologies
GB2444740A (en) 2006-12-14 2008-06-18 Cambridge Semiconductor Ltd Trimming integrated circuits
US7960997B2 (en) * 2007-08-08 2011-06-14 Advanced Analogic Technologies, Inc. Cascode current sensor for discrete power semiconductor devices
US10600902B2 (en) * 2008-02-13 2020-03-24 Vishay SIliconix, LLC Self-repairing field effect transisitor
DE102009047670B4 (de) * 2009-12-08 2020-07-30 Robert Bosch Gmbh Schaltungseinrichtung mit einem Halbleiter-Bauelement
JP2012160538A (ja) * 2011-01-31 2012-08-23 Elpida Memory Inc 半導体装置
KR20130017349A (ko) * 2011-08-10 2013-02-20 삼성전자주식회사 모니터링 패드 및 이를 포함하는 반도체 장치

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