MY170333A - Device architecture and method for precision enhancement of vertical semiconductor devices - Google Patents

Device architecture and method for precision enhancement of vertical semiconductor devices

Info

Publication number
MY170333A
MY170333A MYPI2015001362A MYPI2015001362A MY170333A MY 170333 A MY170333 A MY 170333A MY PI2015001362 A MYPI2015001362 A MY PI2015001362A MY PI2015001362 A MYPI2015001362 A MY PI2015001362A MY 170333 A MY170333 A MY 170333A
Authority
MY
Malaysia
Prior art keywords
devices
vertical semiconductor
resistance
specifications
precise trimming
Prior art date
Application number
MYPI2015001362A
Other languages
English (en)
Inventor
Thomas E Harrington
Original Assignee
D3 Semiconductor LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by D3 Semiconductor LLC filed Critical D3 Semiconductor LLC
Publication of MY170333A publication Critical patent/MY170333A/en

Links

Classifications

    • H10W20/493—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/40—Resistors
    • H10D1/47—Resistors having no potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H10D12/032—Manufacture or treatment of IGBTs of vertical IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/63—Vertical IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10P74/207—
    • H10P74/23—
    • H10W20/494—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices
    • H10B20/20—Programmable ROM [PROM] devices comprising field-effect components
    • H10B20/25—One-time programmable ROM [OTPROM] devices, e.g. using electrically-fusible links

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
MYPI2015001362A 2012-11-26 2013-11-26 Device architecture and method for precision enhancement of vertical semiconductor devices MY170333A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US201261729720P 2012-11-26 2012-11-26

Publications (1)

Publication Number Publication Date
MY170333A true MY170333A (en) 2019-07-17

Family

ID=50772486

Family Applications (1)

Application Number Title Priority Date Filing Date
MYPI2015001362A MY170333A (en) 2012-11-26 2013-11-26 Device architecture and method for precision enhancement of vertical semiconductor devices

Country Status (7)

Country Link
US (3) US9117709B2 (enExample)
EP (1) EP2923375A4 (enExample)
JP (1) JP6276905B2 (enExample)
KR (1) KR20150092212A (enExample)
CN (2) CN105051876B (enExample)
MY (1) MY170333A (enExample)
WO (1) WO2014082098A1 (enExample)

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US9704598B2 (en) * 2014-12-27 2017-07-11 Intel Corporation Use of in-field programmable fuses in the PCH dye
WO2018008068A1 (ja) 2016-07-04 2018-01-11 三菱電機株式会社 半導体装置の製造方法
US11011481B2 (en) * 2016-12-29 2021-05-18 Intel Corporation Configurable resistor
CN107065997B (zh) * 2017-02-09 2018-10-26 张帅 修调功率器件输入电阻的控制方法
CN107769767B (zh) * 2017-10-16 2021-03-09 苏州浪潮智能科技有限公司 一种电阻修调电路及方法
US10650888B1 (en) * 2018-12-26 2020-05-12 Micron Technology, Inc. Tuning voltages in a read circuit
US11933836B2 (en) * 2019-04-08 2024-03-19 Rohm Co., Ltd. Method of measuring a device parameter
EP4300549A4 (en) * 2021-03-31 2024-06-19 Huawei Technologies Co., Ltd. Field effect transistor and manufacturing method therefor, and switching circuit and circuit board
JP7775618B2 (ja) * 2021-10-05 2025-11-26 富士電機株式会社 デバイス、半導体装置、ゲートドライバ、および、パワーモジュール
CN115684864B (zh) * 2023-01-05 2023-03-31 佛山市联动科技股份有限公司 适于开关时间测试和阈值电压测试的测试电路及测试方法

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DE3532383A1 (de) * 1985-09-11 1987-03-19 Bosch Gmbh Robert Multizellentransistor
US4779060A (en) * 1987-06-01 1988-10-18 Gentron Corporation Linear power amplifying system
JP2664793B2 (ja) * 1990-04-06 1997-10-22 株式会社東芝 半導体装置の製造方法
US5446310A (en) * 1992-06-08 1995-08-29 North Carolina State University Integrated circuit power device with external disabling of defective devices and method of fabricating same
US5563447A (en) * 1993-09-07 1996-10-08 Delco Electronics Corp. High power semiconductor switch module
JPH08316327A (ja) * 1995-05-18 1996-11-29 Sony Corp 半導体装置の製造方法
GB9605672D0 (en) 1996-03-18 1996-05-22 Westinghouse Brake & Signal Insulated gate bipolar transistors
KR100251528B1 (ko) * 1997-10-22 2000-04-15 김덕중 복수개의 센스 소오스 패드를 구비한 센스 전계효과 트랜지스터
US20050007160A1 (en) * 2003-07-10 2005-01-13 Neff Robert M. R. Tunable differential transconductor and adjustment method
US7271643B2 (en) * 2005-05-26 2007-09-18 International Business Machines Corporation Circuit for blowing an electrically blowable fuse in SOI technologies
US7782083B2 (en) 2006-12-14 2010-08-24 Cambridge Semiconductor Limited Trimming circuits and methods
US7960997B2 (en) * 2007-08-08 2011-06-14 Advanced Analogic Technologies, Inc. Cascode current sensor for discrete power semiconductor devices
US10600902B2 (en) 2008-02-13 2020-03-24 Vishay SIliconix, LLC Self-repairing field effect transisitor
DE102009047670B4 (de) * 2009-12-08 2020-07-30 Robert Bosch Gmbh Schaltungseinrichtung mit einem Halbleiter-Bauelement
JP2012160538A (ja) * 2011-01-31 2012-08-23 Elpida Memory Inc 半導体装置
KR20130017349A (ko) * 2011-08-10 2013-02-20 삼성전자주식회사 모니터링 패드 및 이를 포함하는 반도체 장치

Also Published As

Publication number Publication date
CN108389807A (zh) 2018-08-10
US9997455B2 (en) 2018-06-12
EP2923375A1 (en) 2015-09-30
CN105051876B (zh) 2018-03-27
JP2016508284A (ja) 2016-03-17
US9117709B2 (en) 2015-08-25
CN105051876A (zh) 2015-11-11
US20140145240A1 (en) 2014-05-29
US20150340318A1 (en) 2015-11-26
WO2014082098A1 (en) 2014-05-30
EP2923375A4 (en) 2016-07-20
JP6276905B2 (ja) 2018-02-07
KR20150092212A (ko) 2015-08-12
US9589889B2 (en) 2017-03-07
US20170179024A1 (en) 2017-06-22

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