JP6276905B2 - 縦型半導体装置の性能を精確に強化するための装置アーキテクチャおよび方法 - Google Patents

縦型半導体装置の性能を精確に強化するための装置アーキテクチャおよび方法 Download PDF

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JP6276905B2
JP6276905B2 JP2015544198A JP2015544198A JP6276905B2 JP 6276905 B2 JP6276905 B2 JP 6276905B2 JP 2015544198 A JP2015544198 A JP 2015544198A JP 2015544198 A JP2015544198 A JP 2015544198A JP 6276905 B2 JP6276905 B2 JP 6276905B2
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gate
trim
terminal
fuse
resistance
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JP2016508284A5 (enExample
JP2016508284A (ja
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ハリントン、トーマス、イー．、サード
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ディー スリー セミコンダクター エルエルシー
ディー スリー セミコンダクター エルエルシー
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
    • H01L23/5256—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
    • H01L23/5256—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive
    • H01L23/5258—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive the change of state resulting from the use of an external beam, e.g. laser beam or ion beam
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/40—Resistors
    • H10D1/47—Resistors having no potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H10D12/032—Manufacture or treatment of IGBTs of vertical IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/63—Vertical IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices
    • H10B20/20—Programmable ROM [PROM] devices comprising field-effect components
    • H10B20/25—One-time programmable ROM [OTPROM] devices, e.g. using electrically-fusible links

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
JP2015544198A 2012-11-26 2013-11-26 縦型半導体装置の性能を精確に強化するための装置アーキテクチャおよび方法 Expired - Fee Related JP6276905B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201261729720P 2012-11-26 2012-11-26
US61/729,720 2012-11-26
PCT/US2013/072111 WO2014082098A1 (en) 2012-11-26 2013-11-26 Device architecture and method for precision enhancement of vertical semiconductor devices

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JP2016508284A JP2016508284A (ja) 2016-03-17
JP2016508284A5 JP2016508284A5 (enExample) 2017-03-09
JP6276905B2 true JP6276905B2 (ja) 2018-02-07

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JP2015544198A Expired - Fee Related JP6276905B2 (ja) 2012-11-26 2013-11-26 縦型半導体装置の性能を精確に強化するための装置アーキテクチャおよび方法

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US (3) US9117709B2 (enExample)
EP (1) EP2923375A4 (enExample)
JP (1) JP6276905B2 (enExample)
KR (1) KR20150092212A (enExample)
CN (2) CN108389807A (enExample)
MY (1) MY170333A (enExample)
WO (1) WO2014082098A1 (enExample)

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US9704598B2 (en) * 2014-12-27 2017-07-11 Intel Corporation Use of in-field programmable fuses in the PCH dye
JP6610785B2 (ja) * 2016-07-04 2019-11-27 三菱電機株式会社 半導体装置の製造方法
WO2018125110A1 (en) * 2016-12-29 2018-07-05 Intel Corporation Configurable resistor
CN107065997B (zh) * 2017-02-09 2018-10-26 张帅 修调功率器件输入电阻的控制方法
CN107769767B (zh) * 2017-10-16 2021-03-09 苏州浪潮智能科技有限公司 一种电阻修调电路及方法
US10650888B1 (en) * 2018-12-26 2020-05-12 Micron Technology, Inc. Tuning voltages in a read circuit
WO2020209110A1 (ja) * 2019-04-08 2020-10-15 ローム株式会社 デバイスパラメータの測定方法
CN115461847A (zh) * 2021-03-31 2022-12-09 华为技术有限公司 一种场效应晶体管、其制作方法、开关电路及电路板
JP7775618B2 (ja) * 2021-10-05 2025-11-26 富士電機株式会社 デバイス、半導体装置、ゲートドライバ、および、パワーモジュール
CN115684864B (zh) * 2023-01-05 2023-03-31 佛山市联动科技股份有限公司 适于开关时间测试和阈值电压测试的测试电路及测试方法

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DE3532383A1 (de) * 1985-09-11 1987-03-19 Bosch Gmbh Robert Multizellentransistor
US4779060A (en) * 1987-06-01 1988-10-18 Gentron Corporation Linear power amplifying system
JP2664793B2 (ja) * 1990-04-06 1997-10-22 株式会社東芝 半導体装置の製造方法
US5446310A (en) * 1992-06-08 1995-08-29 North Carolina State University Integrated circuit power device with external disabling of defective devices and method of fabricating same
US5563447A (en) * 1993-09-07 1996-10-08 Delco Electronics Corp. High power semiconductor switch module
JPH08316327A (ja) * 1995-05-18 1996-11-29 Sony Corp 半導体装置の製造方法
GB9605672D0 (en) * 1996-03-18 1996-05-22 Westinghouse Brake & Signal Insulated gate bipolar transistors
KR100251528B1 (ko) * 1997-10-22 2000-04-15 김덕중 복수개의 센스 소오스 패드를 구비한 센스 전계효과 트랜지스터
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CN105051876B (zh) 2018-03-27
US9117709B2 (en) 2015-08-25
CN108389807A (zh) 2018-08-10
MY170333A (en) 2019-07-17
US20140145240A1 (en) 2014-05-29
EP2923375A4 (en) 2016-07-20
EP2923375A1 (en) 2015-09-30
US9997455B2 (en) 2018-06-12
WO2014082098A1 (en) 2014-05-30
US9589889B2 (en) 2017-03-07
CN105051876A (zh) 2015-11-11
US20150340318A1 (en) 2015-11-26
JP2016508284A (ja) 2016-03-17
US20170179024A1 (en) 2017-06-22
KR20150092212A (ko) 2015-08-12

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