KR20150092212A - 수직 반도체 디바이스의 정밀도 개선을 위한 디바이스 아키텍처 및 방법 - Google Patents

수직 반도체 디바이스의 정밀도 개선을 위한 디바이스 아키텍처 및 방법 Download PDF

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Publication number
KR20150092212A
KR20150092212A KR1020157017256A KR20157017256A KR20150092212A KR 20150092212 A KR20150092212 A KR 20150092212A KR 1020157017256 A KR1020157017256 A KR 1020157017256A KR 20157017256 A KR20157017256 A KR 20157017256A KR 20150092212 A KR20150092212 A KR 20150092212A
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South Korea
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gate
vertical semiconductor
terminal
fuses
fuse
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KR1020157017256A
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Korean (ko)
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토마스 이. 삼세 해링톤
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디3 세미컨덕터 엘엘씨
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    • H01L22/14—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/49—Adaptable interconnections, e.g. fuses or antifuses
    • H10W20/493—Fuses, i.e. interconnections changeable from conductive to non-conductive
    • H01L22/20—
    • H01L27/0203—
    • H01L27/11519—
    • H01L27/11521—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/40—Resistors
    • H10D1/47—Resistors having no potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H10D12/032—Manufacture or treatment of IGBTs of vertical IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/63—Vertical IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/207—Electrical properties, e.g. testing or measuring of resistance, deep levels or capacitance-voltage characteristics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/49—Adaptable interconnections, e.g. fuses or antifuses
    • H10W20/493—Fuses, i.e. interconnections changeable from conductive to non-conductive
    • H10W20/494—Fuses, i.e. interconnections changeable from conductive to non-conductive changeable by the use of an external beam, e.g. laser beam or ion beam
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices
    • H10B20/20—Programmable ROM [PROM] devices comprising field-effect components
    • H10B20/25—One-time programmable ROM [OTPROM] devices, e.g. using electrically-fusible links

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  • Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
KR1020157017256A 2012-11-26 2013-11-26 수직 반도체 디바이스의 정밀도 개선을 위한 디바이스 아키텍처 및 방법 Ceased KR20150092212A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201261729720P 2012-11-26 2012-11-26
US61/729,720 2012-11-26
PCT/US2013/072111 WO2014082098A1 (en) 2012-11-26 2013-11-26 Device architecture and method for precision enhancement of vertical semiconductor devices

Publications (1)

Publication Number Publication Date
KR20150092212A true KR20150092212A (ko) 2015-08-12

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KR1020157017256A Ceased KR20150092212A (ko) 2012-11-26 2013-11-26 수직 반도체 디바이스의 정밀도 개선을 위한 디바이스 아키텍처 및 방법

Country Status (7)

Country Link
US (3) US9117709B2 (enExample)
EP (1) EP2923375A4 (enExample)
JP (1) JP6276905B2 (enExample)
KR (1) KR20150092212A (enExample)
CN (2) CN105051876B (enExample)
MY (1) MY170333A (enExample)
WO (1) WO2014082098A1 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9704598B2 (en) * 2014-12-27 2017-07-11 Intel Corporation Use of in-field programmable fuses in the PCH dye
CN109417019B (zh) 2016-07-04 2023-12-05 三菱电机株式会社 半导体装置的制造方法
WO2018125110A1 (en) * 2016-12-29 2018-07-05 Intel Corporation Configurable resistor
CN107065997B (zh) * 2017-02-09 2018-10-26 张帅 修调功率器件输入电阻的控制方法
CN107769767B (zh) * 2017-10-16 2021-03-09 苏州浪潮智能科技有限公司 一种电阻修调电路及方法
US10650888B1 (en) * 2018-12-26 2020-05-12 Micron Technology, Inc. Tuning voltages in a read circuit
CN113678241B (zh) * 2019-04-08 2023-10-03 罗姆股份有限公司 器件参数的测量方法
CN115461847A (zh) * 2021-03-31 2022-12-09 华为技术有限公司 一种场效应晶体管、其制作方法、开关电路及电路板
JP7775618B2 (ja) * 2021-10-05 2025-11-26 富士電機株式会社 デバイス、半導体装置、ゲートドライバ、および、パワーモジュール
CN115684864B (zh) * 2023-01-05 2023-03-31 佛山市联动科技股份有限公司 适于开关时间测试和阈值电压测试的测试电路及测试方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3532383A1 (de) * 1985-09-11 1987-03-19 Bosch Gmbh Robert Multizellentransistor
US4779060A (en) * 1987-06-01 1988-10-18 Gentron Corporation Linear power amplifying system
JP2664793B2 (ja) * 1990-04-06 1997-10-22 株式会社東芝 半導体装置の製造方法
US5446310A (en) * 1992-06-08 1995-08-29 North Carolina State University Integrated circuit power device with external disabling of defective devices and method of fabricating same
US5563447A (en) * 1993-09-07 1996-10-08 Delco Electronics Corp. High power semiconductor switch module
JPH08316327A (ja) * 1995-05-18 1996-11-29 Sony Corp 半導体装置の製造方法
GB9605672D0 (en) * 1996-03-18 1996-05-22 Westinghouse Brake & Signal Insulated gate bipolar transistors
KR100251528B1 (ko) * 1997-10-22 2000-04-15 김덕중 복수개의 센스 소오스 패드를 구비한 센스 전계효과 트랜지스터
US20050007160A1 (en) * 2003-07-10 2005-01-13 Neff Robert M. R. Tunable differential transconductor and adjustment method
US7271643B2 (en) * 2005-05-26 2007-09-18 International Business Machines Corporation Circuit for blowing an electrically blowable fuse in SOI technologies
GB2444740A (en) 2006-12-14 2008-06-18 Cambridge Semiconductor Ltd Trimming integrated circuits
US7960997B2 (en) * 2007-08-08 2011-06-14 Advanced Analogic Technologies, Inc. Cascode current sensor for discrete power semiconductor devices
US10600902B2 (en) * 2008-02-13 2020-03-24 Vishay SIliconix, LLC Self-repairing field effect transisitor
DE102009047670B4 (de) * 2009-12-08 2020-07-30 Robert Bosch Gmbh Schaltungseinrichtung mit einem Halbleiter-Bauelement
JP2012160538A (ja) * 2011-01-31 2012-08-23 Elpida Memory Inc 半導体装置
KR20130017349A (ko) * 2011-08-10 2013-02-20 삼성전자주식회사 모니터링 패드 및 이를 포함하는 반도체 장치

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Publication number Publication date
EP2923375A4 (en) 2016-07-20
US9117709B2 (en) 2015-08-25
CN105051876B (zh) 2018-03-27
WO2014082098A1 (en) 2014-05-30
JP2016508284A (ja) 2016-03-17
CN108389807A (zh) 2018-08-10
US20170179024A1 (en) 2017-06-22
JP6276905B2 (ja) 2018-02-07
US9589889B2 (en) 2017-03-07
CN105051876A (zh) 2015-11-11
US20150340318A1 (en) 2015-11-26
EP2923375A1 (en) 2015-09-30
MY170333A (en) 2019-07-17
US9997455B2 (en) 2018-06-12
US20140145240A1 (en) 2014-05-29

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