JP2016504764A5 - - Google Patents
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- JP2016504764A5 JP2016504764A5 JP2015547954A JP2015547954A JP2016504764A5 JP 2016504764 A5 JP2016504764 A5 JP 2016504764A5 JP 2015547954 A JP2015547954 A JP 2015547954A JP 2015547954 A JP2015547954 A JP 2015547954A JP 2016504764 A5 JP2016504764 A5 JP 2016504764A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor substrate
- gate oxide
- well region
- gate
- section
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/712,188 US9123798B2 (en) | 2012-12-12 | 2012-12-12 | Insulating gate field effect transistor device and method for providing the same |
| US13/712,188 | 2012-12-12 | ||
| PCT/US2013/070522 WO2014092936A1 (en) | 2012-12-12 | 2013-11-18 | Insulated gate field-effect transistor device and method of making the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2016504764A JP2016504764A (ja) | 2016-02-12 |
| JP2016504764A5 true JP2016504764A5 (enExample) | 2017-01-05 |
Family
ID=49679680
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015547954A Pending JP2016504764A (ja) | 2012-12-12 | 2013-11-18 | 絶縁ゲート型電界効果トランジスタ素子及びその作製方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US9123798B2 (enExample) |
| EP (2) | EP4243080A3 (enExample) |
| JP (1) | JP2016504764A (enExample) |
| KR (1) | KR102106187B1 (enExample) |
| CN (1) | CN104838502B (enExample) |
| WO (1) | WO2014092936A1 (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9123798B2 (en) * | 2012-12-12 | 2015-09-01 | General Electric Company | Insulating gate field effect transistor device and method for providing the same |
| US10211304B2 (en) * | 2013-12-04 | 2019-02-19 | General Electric Company | Semiconductor device having gate trench in JFET region |
| US9978849B2 (en) | 2015-12-29 | 2018-05-22 | Globalfoundries Inc. | SOI-MOSFET gate insulation layer with different thickness |
| US10269951B2 (en) * | 2017-05-16 | 2019-04-23 | General Electric Company | Semiconductor device layout and method for forming same |
| KR102417362B1 (ko) * | 2017-12-14 | 2022-07-05 | 현대자동차 주식회사 | 반도체 소자 및 그 제조 방법 |
| CN109192659B (zh) * | 2018-08-31 | 2020-08-11 | 江苏丽隽功率半导体有限公司 | 一种耗尽型场效应管的制作方法 |
| CN119698187B (zh) * | 2023-09-25 | 2025-11-28 | 中芯国际集成电路制造(北京)有限公司 | 基于oled显示的半导体器件结构、形成方法和显示器件 |
Family Cites Families (34)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4448400A (en) * | 1981-07-13 | 1984-05-15 | Eliyahou Harari | Highly scalable dynamic RAM cell with self-signal amplification |
| US5422288A (en) | 1994-05-19 | 1995-06-06 | Harris Corporation | Method of doping a JFET region in a MOS-gated semiconductor device |
| JP3206727B2 (ja) | 1997-02-20 | 2001-09-10 | 富士電機株式会社 | 炭化けい素縦型ｍｏｓｆｅｔおよびその製造方法 |
| US5879994A (en) | 1997-04-15 | 1999-03-09 | National Semiconductor Corporation | Self-aligned method of fabricating terrace gate DMOS transistor |
| US5894150A (en) | 1997-12-08 | 1999-04-13 | Magepower Semiconductor Corporation | Cell density improvement in planar DMOS with farther-spaced body regions and novel gates |
| US6048759A (en) * | 1998-02-11 | 2000-04-11 | Magepower Semiconductor Corporation | Gate/drain capacitance reduction for double gate-oxide DMOS without degrading avalanche breakdown |
| JP3428459B2 (ja) | 1998-09-01 | 2003-07-22 | 富士電機株式会社 | 炭化けい素ｎチャネルＭＯＳ半導体素子およびその製造方法 |
| KR20010040186A (ko) | 1999-10-27 | 2001-05-15 | 인터실 코포레이션 | 디모스, 절연게이트 바이폴라 트랜지스터, 및 금속 산화막반도체 전계 효과 트랜지스터 등의 전력 모스 소자의게이트 전하 및 게이트/드레인 정전용량 최소화기술 |
| US6956238B2 (en) | 2000-10-03 | 2005-10-18 | Cree, Inc. | Silicon carbide power metal-oxide semiconductor field effect transistors having a shorting channel and methods of fabricating silicon carbide metal-oxide semiconductor field effect transistors having a shorting channel |
| JP3845261B2 (ja) * | 2001-02-28 | 2006-11-15 | 矢崎総業株式会社 | 自動車用電気負荷駆動制御装置 |
| KR100854078B1 (ko) | 2001-09-12 | 2008-08-25 | 페어차일드코리아반도체 주식회사 | 모스 게이트형 전력용 반도체소자 및 그 제조방법 |
| JP4381807B2 (ja) | 2001-09-14 | 2009-12-09 | パナソニック株式会社 | 半導体装置 |
| US6870221B2 (en) | 2002-12-09 | 2005-03-22 | Semiconductor Components Industries, Llc | Power switching transistor with low drain to gate capacitance |
| JP2004319964A (ja) | 2003-03-28 | 2004-11-11 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
| US7074643B2 (en) * | 2003-04-24 | 2006-07-11 | Cree, Inc. | Silicon carbide power devices with self-aligned source and well regions and methods of fabricating same |
| US7205629B2 (en) | 2004-06-03 | 2007-04-17 | Widebandgap Llc | Lateral super junction field effect transistor |
| US7091069B2 (en) | 2004-06-30 | 2006-08-15 | International Business Machines Corporation | Ultra thin body fully-depleted SOI MOSFETs |
| US20060194400A1 (en) * | 2005-01-21 | 2006-08-31 | Cooper James A | Method for fabricating a semiconductor device |
| US7291521B2 (en) | 2005-04-25 | 2007-11-06 | Freescale Semiconductor, Inc. | Self correcting suppression of threshold voltage variation in fully depleted transistors |
| US7659570B2 (en) | 2005-05-09 | 2010-02-09 | Alpha & Omega Semiconductor Ltd. | Power MOSFET device structure for high frequency applications |
| US7504676B2 (en) | 2006-05-31 | 2009-03-17 | Alpha & Omega Semiconductor, Ltd. | Planar split-gate high-performance MOSFET structure and manufacturing method |
| ITTO20060785A1 (it) | 2006-11-02 | 2008-05-03 | St Microelectronics Srl | Dispositivo mos resistente alla radiazione ionizzante |
| US7598567B2 (en) * | 2006-11-03 | 2009-10-06 | Cree, Inc. | Power switching semiconductor devices including rectifying junction-shunts |
| JP4620075B2 (ja) * | 2007-04-03 | 2011-01-26 | 株式会社東芝 | 電力用半導体素子 |
| JP5012286B2 (ja) | 2007-07-27 | 2012-08-29 | 住友電気工業株式会社 | 酸化膜電界効果トランジスタ |
| US8188538B2 (en) * | 2008-12-25 | 2012-05-29 | Rohm Co., Ltd. | Semiconductor device and method of manufacturing semiconductor device |
| JP2011129547A (ja) * | 2009-12-15 | 2011-06-30 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
| US8461647B2 (en) | 2010-03-10 | 2013-06-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device having multi-thickness gate dielectric |
| JP5533104B2 (ja) * | 2010-03-23 | 2014-06-25 | 日産自動車株式会社 | 半導体装置 |
| JP2011243915A (ja) * | 2010-05-21 | 2011-12-01 | Toshiba Corp | 半導体装置及びその製造方法 |
| CN102456738A (zh) * | 2010-10-29 | 2012-05-16 | 上海宏力半导体制造有限公司 | 一种vdmos晶体管 |
| US8742427B2 (en) * | 2010-10-29 | 2014-06-03 | Panasonic Corporation | Semiconductor element |
| JP5694119B2 (ja) | 2010-11-25 | 2015-04-01 | 三菱電機株式会社 | 炭化珪素半導体装置 |
| US9123798B2 (en) * | 2012-12-12 | 2015-09-01 | General Electric Company | Insulating gate field effect transistor device and method for providing the same |
-
2012
- 2012-12-12 US US13/712,188 patent/US9123798B2/en active Active
-
2013
- 2013-11-18 WO PCT/US2013/070522 patent/WO2014092936A1/en not_active Ceased
- 2013-11-18 KR KR1020157018075A patent/KR102106187B1/ko active Active
- 2013-11-18 JP JP2015547954A patent/JP2016504764A/ja active Pending
- 2013-11-18 EP EP23185430.8A patent/EP4243080A3/en active Pending
- 2013-11-18 CN CN201380065184.3A patent/CN104838502B/zh active Active
- 2013-11-18 US US14/787,545 patent/US9735263B2/en active Active
- 2013-11-18 EP EP13798512.3A patent/EP2932531B1/en active Active
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