JP2016504764A - 絶縁ゲート型電界効果トランジスタ素子及びその作製方法 - Google Patents

絶縁ゲート型電界効果トランジスタ素子及びその作製方法 Download PDF

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Publication number
JP2016504764A
JP2016504764A JP2015547954A JP2015547954A JP2016504764A JP 2016504764 A JP2016504764 A JP 2016504764A JP 2015547954 A JP2015547954 A JP 2015547954A JP 2015547954 A JP2015547954 A JP 2015547954A JP 2016504764 A JP2016504764 A JP 2016504764A
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Prior art keywords
semiconductor substrate
well region
gate
gate oxide
region
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Pending
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JP2015547954A
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Japanese (ja)
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JP2016504764A5 (enExample
Inventor
アーサー，スティーブン・デイリー
マトチャ，ケヴィン・ショーン
ラオ，ラマクリシュナ
ルージー，ピーター・アルマーン
ボロトニコフ，アレクサンダー・ウィークトロヴィチ
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General Electric Co
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General Electric Co
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Publication of JP2016504764A publication Critical patent/JP2016504764A/ja
Publication of JP2016504764A5 publication Critical patent/JP2016504764A5/ja
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/351—Substrate regions of field-effect devices
    • H10D62/357—Substrate regions of field-effect devices of FETs
    • H10D62/364—Substrate regions of field-effect devices of FETs of IGFETs
    • H10D62/371—Inactive supplementary semiconductor regions, e.g. for preventing punch-through, improving capacity effect or leakage current
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/514—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers
    • H10D64/516—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers the thicknesses being non-uniform
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Junction Field-Effect Transistors (AREA)
JP2015547954A 2012-12-12 2013-11-18 絶縁ゲート型電界効果トランジスタ素子及びその作製方法 Pending JP2016504764A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/712,188 2012-12-12
US13/712,188 US9123798B2 (en) 2012-12-12 2012-12-12 Insulating gate field effect transistor device and method for providing the same
PCT/US2013/070522 WO2014092936A1 (en) 2012-12-12 2013-11-18 Insulated gate field-effect transistor device and method of making the same

Publications (2)

Publication Number Publication Date
JP2016504764A true JP2016504764A (ja) 2016-02-12
JP2016504764A5 JP2016504764A5 (enExample) 2017-01-05

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JP2015547954A Pending JP2016504764A (ja) 2012-12-12 2013-11-18 絶縁ゲート型電界効果トランジスタ素子及びその作製方法

Country Status (6)

Country Link
US (2) US9123798B2 (enExample)
EP (2) EP2932531B1 (enExample)
JP (1) JP2016504764A (enExample)
KR (1) KR102106187B1 (enExample)
CN (1) CN104838502B (enExample)
WO (1) WO2014092936A1 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9123798B2 (en) * 2012-12-12 2015-09-01 General Electric Company Insulating gate field effect transistor device and method for providing the same
US10211304B2 (en) * 2013-12-04 2019-02-19 General Electric Company Semiconductor device having gate trench in JFET region
US9978849B2 (en) 2015-12-29 2018-05-22 Globalfoundries Inc. SOI-MOSFET gate insulation layer with different thickness
US10269951B2 (en) 2017-05-16 2019-04-23 General Electric Company Semiconductor device layout and method for forming same
KR102417362B1 (ko) * 2017-12-14 2022-07-05 현대자동차 주식회사 반도체 소자 및 그 제조 방법
CN109192659B (zh) * 2018-08-31 2020-08-11 江苏丽隽功率半导体有限公司 一种耗尽型场效应管的制作方法
CN119698187B (zh) * 2023-09-25 2025-11-28 中芯国际集成电路制造(北京)有限公司 基于oled显示的半导体器件结构、形成方法和显示器件

Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6048759A (en) * 1998-02-11 2000-04-11 Magepower Semiconductor Corporation Gate/drain capacitance reduction for double gate-oxide DMOS without degrading avalanche breakdown
US20030057478A1 (en) * 2001-09-12 2003-03-27 Chong-Man Yun Mos-gated power semiconductor device
US20040108547A1 (en) * 2002-12-09 2004-06-10 Semiconductor Components Industries, Llc. Power switching transistor with low drain to gate capacitance
JP2008182191A (ja) * 2006-11-02 2008-08-07 Stmicroelectronics Srl 電離放射線に対して耐性を示すｍｏｓデバイス
JP2008258327A (ja) * 2007-04-03 2008-10-23 Toshiba Corp 電力用半導体素子
JP2009032919A (ja) * 2007-07-27 2009-02-12 Sumitomo Electric Ind Ltd 酸化膜電界効果トランジスタおよびその製造方法
JP2010509771A (ja) * 2006-11-03 2010-03-25 クリー インコーポレイテッド 整流接合分路を含むパワースイッチング半導体デバイス
JP2011129547A (ja) * 2009-12-15 2011-06-30 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP2011193020A (ja) * 2003-04-24 2011-09-29 Cree Inc 自己整合ソースおよびウェル領域を有する炭化珪素パワーデバイスならびにその製造方法
JP2011199141A (ja) * 2010-03-23 2011-10-06 Nissan Motor Co Ltd 半導体装置
JP2011243915A (ja) * 2010-05-21 2011-12-01 Toshiba Corp 半導体装置及びその製造方法
WO2012056642A1 (ja) * 2010-10-29 2012-05-03 パナソニック株式会社 半導体素子

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4448400A (en) * 1981-07-13 1984-05-15 Eliyahou Harari Highly scalable dynamic RAM cell with self-signal amplification
US5422288A (en) 1994-05-19 1995-06-06 Harris Corporation Method of doping a JFET region in a MOS-gated semiconductor device
JP3206727B2 (ja) 1997-02-20 2001-09-10 富士電機株式会社 炭化けい素縦型ｍｏｓｆｅｔおよびその製造方法
US5879994A (en) 1997-04-15 1999-03-09 National Semiconductor Corporation Self-aligned method of fabricating terrace gate DMOS transistor
US5894150A (en) 1997-12-08 1999-04-13 Magepower Semiconductor Corporation Cell density improvement in planar DMOS with farther-spaced body regions and novel gates
JP3428459B2 (ja) 1998-09-01 2003-07-22 富士電機株式会社 炭化けい素ｎチャネルＭＯＳ半導体素子およびその製造方法
KR20010040186A (ko) 1999-10-27 2001-05-15 인터실 코포레이션 디모스, 절연게이트 바이폴라 트랜지스터, 및 금속 산화막반도체 전계 효과 트랜지스터 등의 전력 모스 소자의게이트 전하 및 게이트/드레인 정전용량 최소화기술
US6956238B2 (en) 2000-10-03 2005-10-18 Cree, Inc. Silicon carbide power metal-oxide semiconductor field effect transistors having a shorting channel and methods of fabricating silicon carbide metal-oxide semiconductor field effect transistors having a shorting channel
JP3845261B2 (ja) * 2001-02-28 2006-11-15 矢崎総業株式会社 自動車用電気負荷駆動制御装置
EP1427021B1 (en) 2001-09-14 2011-08-31 Panasonic Corporation Semiconductor device
JP2004319964A (ja) 2003-03-28 2004-11-11 Mitsubishi Electric Corp 半導体装置及びその製造方法
US7205629B2 (en) 2004-06-03 2007-04-17 Widebandgap Llc Lateral super junction field effect transistor
US7091069B2 (en) 2004-06-30 2006-08-15 International Business Machines Corporation Ultra thin body fully-depleted SOI MOSFETs
US20060194400A1 (en) * 2005-01-21 2006-08-31 Cooper James A Method for fabricating a semiconductor device
US7291521B2 (en) 2005-04-25 2007-11-06 Freescale Semiconductor, Inc. Self correcting suppression of threshold voltage variation in fully depleted transistors
US7659570B2 (en) 2005-05-09 2010-02-09 Alpha & Omega Semiconductor Ltd. Power MOSFET device structure for high frequency applications
US7504676B2 (en) 2006-05-31 2009-03-17 Alpha & Omega Semiconductor, Ltd. Planar split-gate high-performance MOSFET structure and manufacturing method
US8188538B2 (en) * 2008-12-25 2012-05-29 Rohm Co., Ltd. Semiconductor device and method of manufacturing semiconductor device
US8461647B2 (en) 2010-03-10 2013-06-11 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device having multi-thickness gate dielectric
CN102456738A (zh) * 2010-10-29 2012-05-16 上海宏力半导体制造有限公司 一种vdmos晶体管
JP5694119B2 (ja) 2010-11-25 2015-04-01 三菱電機株式会社 炭化珪素半導体装置
US9123798B2 (en) * 2012-12-12 2015-09-01 General Electric Company Insulating gate field effect transistor device and method for providing the same

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6048759A (en) * 1998-02-11 2000-04-11 Magepower Semiconductor Corporation Gate/drain capacitance reduction for double gate-oxide DMOS without degrading avalanche breakdown
US20030057478A1 (en) * 2001-09-12 2003-03-27 Chong-Man Yun Mos-gated power semiconductor device
US20040108547A1 (en) * 2002-12-09 2004-06-10 Semiconductor Components Industries, Llc. Power switching transistor with low drain to gate capacitance
JP2011193020A (ja) * 2003-04-24 2011-09-29 Cree Inc 自己整合ソースおよびウェル領域を有する炭化珪素パワーデバイスならびにその製造方法
JP2008182191A (ja) * 2006-11-02 2008-08-07 Stmicroelectronics Srl 電離放射線に対して耐性を示すｍｏｓデバイス
JP2010509771A (ja) * 2006-11-03 2010-03-25 クリー インコーポレイテッド 整流接合分路を含むパワースイッチング半導体デバイス
JP2008258327A (ja) * 2007-04-03 2008-10-23 Toshiba Corp 電力用半導体素子
JP2009032919A (ja) * 2007-07-27 2009-02-12 Sumitomo Electric Ind Ltd 酸化膜電界効果トランジスタおよびその製造方法
JP2011129547A (ja) * 2009-12-15 2011-06-30 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP2011199141A (ja) * 2010-03-23 2011-10-06 Nissan Motor Co Ltd 半導体装置
JP2011243915A (ja) * 2010-05-21 2011-12-01 Toshiba Corp 半導体装置及びその製造方法
WO2012056642A1 (ja) * 2010-10-29 2012-05-03 パナソニック株式会社 半導体素子

Also Published As

Publication number Publication date
EP2932531A1 (en) 2015-10-21
EP4243080A3 (en) 2023-11-08
US9123798B2 (en) 2015-09-01
CN104838502A (zh) 2015-08-12
EP4243080A2 (en) 2023-09-13
US20140159141A1 (en) 2014-06-12
KR102106187B1 (ko) 2020-05-04
KR20150094681A (ko) 2015-08-19
EP2932531B1 (en) 2023-08-30
CN104838502B (zh) 2018-05-11
WO2014092936A1 (en) 2014-06-19
US9735263B2 (en) 2017-08-15
US20160087091A1 (en) 2016-03-24

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