CN104838502B - 绝缘栅场效应晶体管装置及其制作方法 - Google Patents
绝缘栅场效应晶体管装置及其制作方法 Download PDFInfo
- Publication number
- CN104838502B CN104838502B CN201380065184.3A CN201380065184A CN104838502B CN 104838502 B CN104838502 B CN 104838502B CN 201380065184 A CN201380065184 A CN 201380065184A CN 104838502 B CN104838502 B CN 104838502B
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- CN
- China
- Prior art keywords
- well region
- semiconductor body
- gate
- gate oxide
- inner segment
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Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
- H10D12/01—Manufacture or treatment
- H10D12/031—Manufacture or treatment of IGBTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
- H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
- H10D30/66—Vertical DMOS [VDMOS] FETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D62/351—Substrate regions of field-effect devices
- H10D62/357—Substrate regions of field-effect devices of FETs
- H10D62/364—Substrate regions of field-effect devices of FETs of IGFETs
- H10D62/371—Inactive supplementary semiconductor regions, e.g. for preventing punch-through, improving capacity effect or leakage current
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
- H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
- H10D62/8325—Silicon carbide
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
- H10D64/311—Gate electrodes for field-effect devices
- H10D64/411—Gate electrodes for field-effect devices for FETs
- H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
- H10D64/514—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers
- H10D64/516—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers the thicknesses being non-uniform
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
- H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
Landscapes
- Insulated Gate Type Field-Effect Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/712,188 US9123798B2 (en) | 2012-12-12 | 2012-12-12 | Insulating gate field effect transistor device and method for providing the same |
| US13/712188 | 2012-12-12 | ||
| PCT/US2013/070522 WO2014092936A1 (en) | 2012-12-12 | 2013-11-18 | Insulated gate field-effect transistor device and method of making the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104838502A CN104838502A (zh) | 2015-08-12 |
| CN104838502B true CN104838502B (zh) | 2018-05-11 |
Family
ID=49679680
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201380065184.3A Active CN104838502B (zh) | 2012-12-12 | 2013-11-18 | 绝缘栅场效应晶体管装置及其制作方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US9123798B2 (enExample) |
| EP (2) | EP4243080A3 (enExample) |
| JP (1) | JP2016504764A (enExample) |
| KR (1) | KR102106187B1 (enExample) |
| CN (1) | CN104838502B (enExample) |
| WO (1) | WO2014092936A1 (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9123798B2 (en) * | 2012-12-12 | 2015-09-01 | General Electric Company | Insulating gate field effect transistor device and method for providing the same |
| US10211304B2 (en) * | 2013-12-04 | 2019-02-19 | General Electric Company | Semiconductor device having gate trench in JFET region |
| US9978849B2 (en) | 2015-12-29 | 2018-05-22 | Globalfoundries Inc. | SOI-MOSFET gate insulation layer with different thickness |
| US10269951B2 (en) * | 2017-05-16 | 2019-04-23 | General Electric Company | Semiconductor device layout and method for forming same |
| KR102417362B1 (ko) * | 2017-12-14 | 2022-07-05 | 현대자동차 주식회사 | 반도체 소자 및 그 제조 방법 |
| CN109192659B (zh) * | 2018-08-31 | 2020-08-11 | 江苏丽隽功率半导体有限公司 | 一种耗尽型场效应管的制作方法 |
| CN119698187B (zh) * | 2023-09-25 | 2025-11-28 | 中芯国际集成电路制造(北京)有限公司 | 基于oled显示的半导体器件结构、形成方法和显示器件 |
Family Cites Families (34)
| Publication number | Priority date | Publication date | Assignee | Title |
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| US4448400A (en) * | 1981-07-13 | 1984-05-15 | Eliyahou Harari | Highly scalable dynamic RAM cell with self-signal amplification |
| US5422288A (en) | 1994-05-19 | 1995-06-06 | Harris Corporation | Method of doping a JFET region in a MOS-gated semiconductor device |
| JP3206727B2 (ja) | 1997-02-20 | 2001-09-10 | 富士電機株式会社 | 炭化けい素縦型ｍｏｓｆｅｔおよびその製造方法 |
| US5879994A (en) | 1997-04-15 | 1999-03-09 | National Semiconductor Corporation | Self-aligned method of fabricating terrace gate DMOS transistor |
| US5894150A (en) | 1997-12-08 | 1999-04-13 | Magepower Semiconductor Corporation | Cell density improvement in planar DMOS with farther-spaced body regions and novel gates |
| US6048759A (en) * | 1998-02-11 | 2000-04-11 | Magepower Semiconductor Corporation | Gate/drain capacitance reduction for double gate-oxide DMOS without degrading avalanche breakdown |
| JP3428459B2 (ja) | 1998-09-01 | 2003-07-22 | 富士電機株式会社 | 炭化けい素ｎチャネルＭＯＳ半導体素子およびその製造方法 |
| KR20010040186A (ko) | 1999-10-27 | 2001-05-15 | 인터실 코포레이션 | 디모스, 절연게이트 바이폴라 트랜지스터, 및 금속 산화막반도체 전계 효과 트랜지스터 등의 전력 모스 소자의게이트 전하 및 게이트/드레인 정전용량 최소화기술 |
| US6956238B2 (en) | 2000-10-03 | 2005-10-18 | Cree, Inc. | Silicon carbide power metal-oxide semiconductor field effect transistors having a shorting channel and methods of fabricating silicon carbide metal-oxide semiconductor field effect transistors having a shorting channel |
| JP3845261B2 (ja) * | 2001-02-28 | 2006-11-15 | 矢崎総業株式会社 | 自動車用電気負荷駆動制御装置 |
| KR100854078B1 (ko) * | 2001-09-12 | 2008-08-25 | 페어차일드코리아반도체 주식회사 | 모스 게이트형 전력용 반도체소자 및 그 제조방법 |
| CN1265467C (zh) | 2001-09-14 | 2006-07-19 | 松下电器产业株式会社 | 半导体装置 |
| US6870221B2 (en) | 2002-12-09 | 2005-03-22 | Semiconductor Components Industries, Llc | Power switching transistor with low drain to gate capacitance |
| JP2004319964A (ja) | 2003-03-28 | 2004-11-11 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
| US7074643B2 (en) * | 2003-04-24 | 2006-07-11 | Cree, Inc. | Silicon carbide power devices with self-aligned source and well regions and methods of fabricating same |
| US7205629B2 (en) | 2004-06-03 | 2007-04-17 | Widebandgap Llc | Lateral super junction field effect transistor |
| US7091069B2 (en) | 2004-06-30 | 2006-08-15 | International Business Machines Corporation | Ultra thin body fully-depleted SOI MOSFETs |
| US20060194400A1 (en) * | 2005-01-21 | 2006-08-31 | Cooper James A | Method for fabricating a semiconductor device |
| US7291521B2 (en) | 2005-04-25 | 2007-11-06 | Freescale Semiconductor, Inc. | Self correcting suppression of threshold voltage variation in fully depleted transistors |
| US7659570B2 (en) | 2005-05-09 | 2010-02-09 | Alpha & Omega Semiconductor Ltd. | Power MOSFET device structure for high frequency applications |
| US7504676B2 (en) | 2006-05-31 | 2009-03-17 | Alpha & Omega Semiconductor, Ltd. | Planar split-gate high-performance MOSFET structure and manufacturing method |
| ITTO20060785A1 (it) * | 2006-11-02 | 2008-05-03 | St Microelectronics Srl | Dispositivo mos resistente alla radiazione ionizzante |
| US7598567B2 (en) * | 2006-11-03 | 2009-10-06 | Cree, Inc. | Power switching semiconductor devices including rectifying junction-shunts |
| JP4620075B2 (ja) * | 2007-04-03 | 2011-01-26 | 株式会社東芝 | 電力用半導体素子 |
| JP5012286B2 (ja) | 2007-07-27 | 2012-08-29 | 住友電気工業株式会社 | 酸化膜電界効果トランジスタ |
| JP5588671B2 (ja) * | 2008-12-25 | 2014-09-10 | ローム株式会社 | 半導体装置の製造方法 |
| JP2011129547A (ja) * | 2009-12-15 | 2011-06-30 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
| US8461647B2 (en) | 2010-03-10 | 2013-06-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device having multi-thickness gate dielectric |
| JP5533104B2 (ja) * | 2010-03-23 | 2014-06-25 | 日産自動車株式会社 | 半導体装置 |
| JP2011243915A (ja) * | 2010-05-21 | 2011-12-01 | Toshiba Corp | 半導体装置及びその製造方法 |
| CN102456738A (zh) | 2010-10-29 | 2012-05-16 | 上海宏力半导体制造有限公司 | 一种vdmos晶体管 |
| JP4965754B2 (ja) * | 2010-10-29 | 2012-07-04 | パナソニック株式会社 | 半導体素子 |
| JP5694119B2 (ja) | 2010-11-25 | 2015-04-01 | 三菱電機株式会社 | 炭化珪素半導体装置 |
| US9123798B2 (en) * | 2012-12-12 | 2015-09-01 | General Electric Company | Insulating gate field effect transistor device and method for providing the same |
-
2012
- 2012-12-12 US US13/712,188 patent/US9123798B2/en active Active
-
2013
- 2013-11-18 CN CN201380065184.3A patent/CN104838502B/zh active Active
- 2013-11-18 EP EP23185430.8A patent/EP4243080A3/en active Pending
- 2013-11-18 WO PCT/US2013/070522 patent/WO2014092936A1/en not_active Ceased
- 2013-11-18 JP JP2015547954A patent/JP2016504764A/ja active Pending
- 2013-11-18 KR KR1020157018075A patent/KR102106187B1/ko active Active
- 2013-11-18 EP EP13798512.3A patent/EP2932531B1/en active Active
- 2013-11-18 US US14/787,545 patent/US9735263B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| EP4243080A2 (en) | 2023-09-13 |
| US9123798B2 (en) | 2015-09-01 |
| US20140159141A1 (en) | 2014-06-12 |
| CN104838502A (zh) | 2015-08-12 |
| EP2932531B1 (en) | 2023-08-30 |
| EP2932531A1 (en) | 2015-10-21 |
| WO2014092936A1 (en) | 2014-06-19 |
| KR102106187B1 (ko) | 2020-05-04 |
| US9735263B2 (en) | 2017-08-15 |
| KR20150094681A (ko) | 2015-08-19 |
| JP2016504764A (ja) | 2016-02-12 |
| US20160087091A1 (en) | 2016-03-24 |
| EP4243080A3 (en) | 2023-11-08 |
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Legal Events
| Date | Code | Title | Description |
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| PB01 | Publication | ||
| EXSB | Decision made by sipo to initiate substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |