JP2016500914A5 - - Google Patents

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Publication number
JP2016500914A5
JP2016500914A5 JP2015532558A JP2015532558A JP2016500914A5 JP 2016500914 A5 JP2016500914 A5 JP 2016500914A5 JP 2015532558 A JP2015532558 A JP 2015532558A JP 2015532558 A JP2015532558 A JP 2015532558A JP 2016500914 A5 JP2016500914 A5 JP 2016500914A5
Authority
JP
Japan
Prior art keywords
electronic device
semiconductor material
terminal
layer
terminals
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2015532558A
Other languages
English (en)
Japanese (ja)
Other versions
JP2016500914A (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/IB2013/058692 external-priority patent/WO2014049500A1/en
Publication of JP2016500914A publication Critical patent/JP2016500914A/ja
Publication of JP2016500914A5 publication Critical patent/JP2016500914A5/ja
Pending legal-status Critical Current

Links

JP2015532558A 2012-09-25 2013-09-20 電流切換トランジスタ Pending JP2016500914A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
ZA2012/07163 2012-09-25
ZA201207163 2012-09-25
PCT/IB2013/058692 WO2014049500A1 (en) 2012-09-25 2013-09-20 Current switching transistor

Publications (2)

Publication Number Publication Date
JP2016500914A JP2016500914A (ja) 2016-01-14
JP2016500914A5 true JP2016500914A5 (enExample) 2016-10-13

Family

ID=50387078

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2015532558A Pending JP2016500914A (ja) 2012-09-25 2013-09-20 電流切換トランジスタ

Country Status (7)

Country Link
US (1) US9601604B2 (enExample)
EP (1) EP2901492A4 (enExample)
JP (1) JP2016500914A (enExample)
KR (1) KR20150066547A (enExample)
CN (1) CN104662670B (enExample)
WO (1) WO2014049500A1 (enExample)
ZA (1) ZA201502852B (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9431205B1 (en) 2015-04-13 2016-08-30 International Business Machines Corporation Fold over emitter and collector field emission transistor
USD848384S1 (en) * 2017-08-17 2019-05-14 Epistar Corporation Transistor

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA272437A (en) 1925-10-22 1927-07-19 Edgar Lilienfeld Julius Electric current control mechanism
US2524033A (en) 1948-02-26 1950-10-03 Bell Telephone Labor Inc Three-electrode circuit element utilizing semiconductive materials
US2524035A (en) 1948-02-26 1950-10-03 Bell Telphone Lab Inc Three-electrode circuit element utilizing semiconductive materials
US2569347A (en) 1948-06-26 1951-09-25 Bell Telephone Labor Inc Circuit element utilizing semiconductive material
FR2241875B1 (enExample) * 1973-08-21 1977-09-09 Radiotechnique Compelec
JPS5816602B2 (ja) * 1979-02-09 1983-04-01 ティーディーケイ株式会社 電圧非直線性抵抗素子
DE3004736C2 (de) 1979-02-09 1986-08-21 TDK Corporation, Tokio/Tokyo Varistor und Verfahren zu seiner Herstellung
JPS5735303A (en) * 1980-07-30 1982-02-25 Taiyo Yuden Kk Voltage vs current characteristic nonlinear semiconductor porcelain composition and method of producing same
JPH01146305A (ja) * 1987-12-03 1989-06-08 Nec Corp 金属酸化物バリスタ
JP2712046B2 (ja) * 1989-10-18 1998-02-10 宇部興産株式会社 液晶表示装置
JP2556151B2 (ja) * 1989-11-21 1996-11-20 株式会社村田製作所 積層型バリスタ
JPH05275958A (ja) * 1992-03-25 1993-10-22 Murata Mfg Co Ltd ノイズフィルタ
JP2001023805A (ja) * 1999-07-09 2001-01-26 Matsushita Electric Ind Co Ltd バリスタの製造方法
DE10059498A1 (de) 2000-11-30 2002-06-13 Infineon Technologies Ag Substrat mit einer halbleitenden Schicht, elektronisches Bauelement mit diesem Substrat, elektronische Schaltung mit mindestens einem solchen elektronischen Bauelement, druckbare Zusammensetzung sowie Verfahren zur Herstellung eines Substrats
WO2004068536A2 (en) 2003-01-30 2004-08-12 University Of Cape Town A thin film semiconductor device and method of manufacturing a thin film semiconductor device
JP2005340301A (ja) * 2004-05-24 2005-12-08 Tdk Corp 電圧依存性非直線抵抗体
US8183504B2 (en) * 2005-03-28 2012-05-22 Tyco Electronics Corporation Surface mount multi-layer electrical circuit protection device with active element between PPTC layers
JP4487963B2 (ja) 2006-03-27 2010-06-23 Tdk株式会社 バリスタ及び発光装置
WO2008010437A1 (en) 2006-07-20 2008-01-24 Otowa Electric Co., Ltd. Lead line extracting type spd and spd manufacturing method
US8203421B2 (en) 2008-04-14 2012-06-19 Shocking Technologies, Inc. Substrate device or package using embedded layer of voltage switchable dielectric material in a vertical switching configuration
US20100159259A1 (en) * 2008-12-19 2010-06-24 Lex Kosowsky Voltage switchable dielectric material incorporating p and n type material
KR101679099B1 (ko) 2009-03-26 2016-11-23 쇼킹 테크놀로지스 인코포레이티드 전압 스위칭형 유전 물질을 갖는 소자
US20110132645A1 (en) * 2009-12-04 2011-06-09 Ning Shi Granular varistor and applications for use thereof
JP5543190B2 (ja) 2009-12-17 2014-07-09 株式会社日本自動車部品総合研究所 回転検出装置
US9320135B2 (en) 2010-02-26 2016-04-19 Littelfuse, Inc. Electric discharge protection for surface mounted and embedded components

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