JP2016500914A - 電流切換トランジスタ - Google Patents

電流切換トランジスタ Download PDF

Info

Publication number
JP2016500914A
JP2016500914A JP2015532558A JP2015532558A JP2016500914A JP 2016500914 A JP2016500914 A JP 2016500914A JP 2015532558 A JP2015532558 A JP 2015532558A JP 2015532558 A JP2015532558 A JP 2015532558A JP 2016500914 A JP2016500914 A JP 2016500914A
Authority
JP
Japan
Prior art keywords
semiconductor material
terminal
electronic device
terminals
conductive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2015532558A
Other languages
English (en)
Japanese (ja)
Other versions
JP2016500914A5 (enExample
Inventor
デイビッド・トーマス・ブリットン
マルギット・ヘルティング
スタンリー・ダグラス・ウォルトン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
PST Sensors Pty Ltd
Original Assignee
PST Sensors Pty Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by PST Sensors Pty Ltd filed Critical PST Sensors Pty Ltd
Publication of JP2016500914A publication Critical patent/JP2016500914A/ja
Publication of JP2016500914A5 publication Critical patent/JP2016500914A5/ja
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/34—Bipolar devices
    • H10D48/345—Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/34—Bipolar devices
    • H10D48/341—Unijunction transistors, i.e. double base diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N97/00—Electric solid-state thin-film or thick-film devices, not otherwise provided for
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
    • H01C7/1013—Thin film varistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H10K85/1135—Polyethylene dioxythiophene [PEDOT]; Derivatives thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
  • Thin Film Transistor (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
JP2015532558A 2012-09-25 2013-09-20 電流切換トランジスタ Pending JP2016500914A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
ZA2012/07163 2012-09-25
ZA201207163 2012-09-25
PCT/IB2013/058692 WO2014049500A1 (en) 2012-09-25 2013-09-20 Current switching transistor

Publications (2)

Publication Number Publication Date
JP2016500914A true JP2016500914A (ja) 2016-01-14
JP2016500914A5 JP2016500914A5 (enExample) 2016-10-13

Family

ID=50387078

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2015532558A Pending JP2016500914A (ja) 2012-09-25 2013-09-20 電流切換トランジスタ

Country Status (7)

Country Link
US (1) US9601604B2 (enExample)
EP (1) EP2901492A4 (enExample)
JP (1) JP2016500914A (enExample)
KR (1) KR20150066547A (enExample)
CN (1) CN104662670B (enExample)
WO (1) WO2014049500A1 (enExample)
ZA (1) ZA201502852B (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9431205B1 (en) 2015-04-13 2016-08-30 International Business Machines Corporation Fold over emitter and collector field emission transistor
USD848384S1 (en) * 2017-08-17 2019-05-14 Epistar Corporation Transistor

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01146305A (ja) * 1987-12-03 1989-06-08 Nec Corp 金属酸化物バリスタ
US20100159259A1 (en) * 2008-12-19 2010-06-24 Lex Kosowsky Voltage switchable dielectric material incorporating p and n type material

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA272437A (en) 1925-10-22 1927-07-19 Edgar Lilienfeld Julius Electric current control mechanism
US2524033A (en) 1948-02-26 1950-10-03 Bell Telephone Labor Inc Three-electrode circuit element utilizing semiconductive materials
US2524035A (en) 1948-02-26 1950-10-03 Bell Telphone Lab Inc Three-electrode circuit element utilizing semiconductive materials
US2569347A (en) 1948-06-26 1951-09-25 Bell Telephone Labor Inc Circuit element utilizing semiconductive material
FR2241875B1 (enExample) * 1973-08-21 1977-09-09 Radiotechnique Compelec
JPS5816602B2 (ja) * 1979-02-09 1983-04-01 ティーディーケイ株式会社 電圧非直線性抵抗素子
DE3004736C2 (de) 1979-02-09 1986-08-21 TDK Corporation, Tokio/Tokyo Varistor und Verfahren zu seiner Herstellung
JPS5735303A (en) * 1980-07-30 1982-02-25 Taiyo Yuden Kk Voltage vs current characteristic nonlinear semiconductor porcelain composition and method of producing same
JP2712046B2 (ja) * 1989-10-18 1998-02-10 宇部興産株式会社 液晶表示装置
JP2556151B2 (ja) * 1989-11-21 1996-11-20 株式会社村田製作所 積層型バリスタ
JPH05275958A (ja) * 1992-03-25 1993-10-22 Murata Mfg Co Ltd ノイズフィルタ
JP2001023805A (ja) * 1999-07-09 2001-01-26 Matsushita Electric Ind Co Ltd バリスタの製造方法
DE10059498A1 (de) 2000-11-30 2002-06-13 Infineon Technologies Ag Substrat mit einer halbleitenden Schicht, elektronisches Bauelement mit diesem Substrat, elektronische Schaltung mit mindestens einem solchen elektronischen Bauelement, druckbare Zusammensetzung sowie Verfahren zur Herstellung eines Substrats
WO2004068536A2 (en) 2003-01-30 2004-08-12 University Of Cape Town A thin film semiconductor device and method of manufacturing a thin film semiconductor device
JP2005340301A (ja) * 2004-05-24 2005-12-08 Tdk Corp 電圧依存性非直線抵抗体
US8183504B2 (en) * 2005-03-28 2012-05-22 Tyco Electronics Corporation Surface mount multi-layer electrical circuit protection device with active element between PPTC layers
JP4487963B2 (ja) 2006-03-27 2010-06-23 Ｔｄｋ株式会社 バリスタ及び発光装置
WO2008010437A1 (en) 2006-07-20 2008-01-24 Otowa Electric Co., Ltd. Lead line extracting type spd and spd manufacturing method
US8203421B2 (en) 2008-04-14 2012-06-19 Shocking Technologies, Inc. Substrate device or package using embedded layer of voltage switchable dielectric material in a vertical switching configuration
KR101679099B1 (ko) 2009-03-26 2016-11-23 쇼킹 테크놀로지스 인코포레이티드 전압 스위칭형 유전 물질을 갖는 소자
US20110132645A1 (en) * 2009-12-04 2011-06-09 Ning Shi Granular varistor and applications for use thereof
JP5543190B2 (ja) 2009-12-17 2014-07-09 株式会社日本自動車部品総合研究所 回転検出装置
US9320135B2 (en) 2010-02-26 2016-04-19 Littelfuse, Inc. Electric discharge protection for surface mounted and embedded components

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01146305A (ja) * 1987-12-03 1989-06-08 Nec Corp 金属酸化物バリスタ
US20100159259A1 (en) * 2008-12-19 2010-06-24 Lex Kosowsky Voltage switchable dielectric material incorporating p and n type material

Also Published As

Publication number Publication date
US20150236140A1 (en) 2015-08-20
EP2901492A4 (en) 2016-06-22
WO2014049500A1 (en) 2014-04-03
EP2901492A1 (en) 2015-08-05
US9601604B2 (en) 2017-03-21
ZA201502852B (en) 2016-11-30
KR20150066547A (ko) 2015-06-16
CN104662670B (zh) 2019-03-12
CN104662670A (zh) 2015-05-27

Similar Documents

Publication Publication Date Title
JP5231327B2 (ja) 薄膜トランジスタ
US20110114914A1 (en) Field effect transistor and circuit device
US9773990B1 (en) Semiconductor device
JP2008258608A (ja) 両極性トランジスタ設計
US20140209997A1 (en) Thin film transistor
US10121981B2 (en) Field effect transistor and method for production thereof
KR101487443B1 (ko) 유전막 표면 개질용 트랜지스터 및 이의 제조 방법
JP2016500914A (ja) 電流切換トランジスタ
CN105932049A (zh) 一种纳米二极管器件及其制备方法
CN107078163A (zh) 薄膜晶体管阵列及其制造方法
JP5898226B2 (ja) ダイオード、その使用、及びそれを製造するための方法
WO2011088340A2 (en) A carbon nanotube crossbar based nano-architecture
KR101499075B1 (ko) 유전막 표면 개질용 저전압 트랜지스터 및 이의 제조 방법
US9859514B1 (en) Method for making nano-heterostructure
KR102320396B1 (ko) 그래핀과 탄소 나노 튜브 접합에 기반하는 트랜지스터 및 이를 제조하는 방법
CN103579349A (zh) 一种具有改良栅结构的晶体管
US20060001021A1 (en) Multiple semiconductor inks apparatus and method
EP2232603A1 (en) Printed organic logic circuits using an organic semiconductor as a resistive load device
JP6123413B2 (ja) 薄膜トランジスタアレイおよび画像表示装置
JP5277532B2 (ja) 電子素子
Moriwaki et al. Fabrication of Flexible Organic Field Effect Transistor Using Patterned Electrospray Deposition
US11264516B2 (en) Thin film transistor
US20080237584A1 (en) Organic Component and Electric Circuit Comprising Said Component
CN101410998A (zh) 多栅极印刷晶体管方法及装置

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20160826

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20160826

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20170518

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20170523

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20180109