CN104662670B - 电流开关晶体管 - Google Patents

电流开关晶体管 Download PDF

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Publication number
CN104662670B
CN104662670B CN201380049979.5A CN201380049979A CN104662670B CN 104662670 B CN104662670 B CN 104662670B CN 201380049979 A CN201380049979 A CN 201380049979A CN 104662670 B CN104662670 B CN 104662670B
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CN
China
Prior art keywords
terminal
semiconductor material
contact
electronic device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201380049979.5A
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English (en)
Chinese (zh)
Other versions
CN104662670A (zh
Inventor
大卫·托马斯·布里顿
马尔吉特·黑廷
斯坦利·道格拉斯·沃顿
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PST Sensors Pty Ltd
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PST Sensors Pty Ltd
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Publication of CN104662670A publication Critical patent/CN104662670A/zh
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Expired - Fee Related legal-status Critical Current
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/34—Bipolar devices
    • H10D48/345—Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/34—Bipolar devices
    • H10D48/341—Unijunction transistors, i.e. double base diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N97/00—Electric solid-state thin-film or thick-film devices, not otherwise provided for
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
    • H01C7/1013—Thin film varistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H10K85/1135—Polyethylene dioxythiophene [PEDOT]; Derivatives thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Thin Film Transistor (AREA)
CN201380049979.5A 2012-09-25 2013-09-20 电流开关晶体管 Expired - Fee Related CN104662670B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
ZA2012/07163 2012-09-25
ZA201207163 2012-09-25
PCT/IB2013/058692 WO2014049500A1 (en) 2012-09-25 2013-09-20 Current switching transistor

Publications (2)

Publication Number Publication Date
CN104662670A CN104662670A (zh) 2015-05-27
CN104662670B true CN104662670B (zh) 2019-03-12

Family

ID=50387078

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201380049979.5A Expired - Fee Related CN104662670B (zh) 2012-09-25 2013-09-20 电流开关晶体管

Country Status (7)

Country Link
US (1) US9601604B2 (enExample)
EP (1) EP2901492A4 (enExample)
JP (1) JP2016500914A (enExample)
KR (1) KR20150066547A (enExample)
CN (1) CN104662670B (enExample)
WO (1) WO2014049500A1 (enExample)
ZA (1) ZA201502852B (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9431205B1 (en) 2015-04-13 2016-08-30 International Business Machines Corporation Fold over emitter and collector field emission transistor
USD848384S1 (en) * 2017-08-17 2019-05-14 Epistar Corporation Transistor

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4316171A (en) * 1979-02-09 1982-02-16 Tdk Electronics Co., Ltd. Non-linear resistance elements and method for manufacturing same
CN101047052A (zh) * 2006-03-27 2007-10-03 Tdk株式会社 可变电阻和发光装置
US20110132645A1 (en) * 2009-12-04 2011-06-09 Ning Shi Granular varistor and applications for use thereof
CN102550132A (zh) * 2009-03-26 2012-07-04 肖克科技有限公司 具有电压可切换电介质材料的元件

Family Cites Families (21)

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Publication number Priority date Publication date Assignee Title
CA272437A (en) 1925-10-22 1927-07-19 Edgar Lilienfeld Julius Electric current control mechanism
US2524033A (en) 1948-02-26 1950-10-03 Bell Telephone Labor Inc Three-electrode circuit element utilizing semiconductive materials
US2524035A (en) 1948-02-26 1950-10-03 Bell Telphone Lab Inc Three-electrode circuit element utilizing semiconductive materials
US2569347A (en) 1948-06-26 1951-09-25 Bell Telephone Labor Inc Circuit element utilizing semiconductive material
FR2241875B1 (enExample) * 1973-08-21 1977-09-09 Radiotechnique Compelec
DE3004736C2 (de) 1979-02-09 1986-08-21 TDK Corporation, Tokio/Tokyo Varistor und Verfahren zu seiner Herstellung
JPS5735303A (en) * 1980-07-30 1982-02-25 Taiyo Yuden Kk Voltage vs current characteristic nonlinear semiconductor porcelain composition and method of producing same
JPH01146305A (ja) * 1987-12-03 1989-06-08 Nec Corp 金属酸化物バリスタ
JP2712046B2 (ja) * 1989-10-18 1998-02-10 宇部興産株式会社 液晶表示装置
JP2556151B2 (ja) * 1989-11-21 1996-11-20 株式会社村田製作所 積層型バリスタ
JPH05275958A (ja) * 1992-03-25 1993-10-22 Murata Mfg Co Ltd ノイズフィルタ
JP2001023805A (ja) * 1999-07-09 2001-01-26 Matsushita Electric Ind Co Ltd バリスタの製造方法
DE10059498A1 (de) 2000-11-30 2002-06-13 Infineon Technologies Ag Substrat mit einer halbleitenden Schicht, elektronisches Bauelement mit diesem Substrat, elektronische Schaltung mit mindestens einem solchen elektronischen Bauelement, druckbare Zusammensetzung sowie Verfahren zur Herstellung eines Substrats
WO2004068536A2 (en) 2003-01-30 2004-08-12 University Of Cape Town A thin film semiconductor device and method of manufacturing a thin film semiconductor device
JP2005340301A (ja) * 2004-05-24 2005-12-08 Tdk Corp 電圧依存性非直線抵抗体
US8183504B2 (en) * 2005-03-28 2012-05-22 Tyco Electronics Corporation Surface mount multi-layer electrical circuit protection device with active element between PPTC layers
WO2008010437A1 (en) 2006-07-20 2008-01-24 Otowa Electric Co., Ltd. Lead line extracting type spd and spd manufacturing method
US8203421B2 (en) 2008-04-14 2012-06-19 Shocking Technologies, Inc. Substrate device or package using embedded layer of voltage switchable dielectric material in a vertical switching configuration
US20100159259A1 (en) * 2008-12-19 2010-06-24 Lex Kosowsky Voltage switchable dielectric material incorporating p and n type material
JP5543190B2 (ja) 2009-12-17 2014-07-09 株式会社日本自動車部品総合研究所 回転検出装置
US9320135B2 (en) 2010-02-26 2016-04-19 Littelfuse, Inc. Electric discharge protection for surface mounted and embedded components

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4316171A (en) * 1979-02-09 1982-02-16 Tdk Electronics Co., Ltd. Non-linear resistance elements and method for manufacturing same
CN101047052A (zh) * 2006-03-27 2007-10-03 Tdk株式会社 可变电阻和发光装置
CN102550132A (zh) * 2009-03-26 2012-07-04 肖克科技有限公司 具有电压可切换电介质材料的元件
US20110132645A1 (en) * 2009-12-04 2011-06-09 Ning Shi Granular varistor and applications for use thereof

Also Published As

Publication number Publication date
US20150236140A1 (en) 2015-08-20
EP2901492A4 (en) 2016-06-22
WO2014049500A1 (en) 2014-04-03
EP2901492A1 (en) 2015-08-05
US9601604B2 (en) 2017-03-21
ZA201502852B (en) 2016-11-30
KR20150066547A (ko) 2015-06-16
JP2016500914A (ja) 2016-01-14
CN104662670A (zh) 2015-05-27

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Granted publication date: 20190312

Termination date: 20190920