JP2016219528A - 加工装置 - Google Patents
加工装置 Download PDFInfo
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- JP2016219528A JP2016219528A JP2015100786A JP2015100786A JP2016219528A JP 2016219528 A JP2016219528 A JP 2016219528A JP 2015100786 A JP2015100786 A JP 2015100786A JP 2015100786 A JP2015100786 A JP 2015100786A JP 2016219528 A JP2016219528 A JP 2016219528A
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- 238000001514 detection method Methods 0.000 claims abstract description 13
- 238000003384 imaging method Methods 0.000 claims description 22
- 238000005259 measurement Methods 0.000 abstract 1
- 238000005520 cutting process Methods 0.000 description 63
- 239000004065 semiconductor Substances 0.000 description 39
- 238000000034 method Methods 0.000 description 14
- 238000003754 machining Methods 0.000 description 12
- 238000004140 cleaning Methods 0.000 description 8
- 230000001678 irradiating effect Effects 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- BZHJMEDXRYGGRV-UHFFFAOYSA-N Vinyl chloride Chemical compound ClC=C BZHJMEDXRYGGRV-UHFFFAOYSA-N 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000002679 ablation Methods 0.000 description 1
- 239000006061 abrasive grain Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/02—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills
- B28D5/022—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills by cutting with discs or wheels
- B28D5/026—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills by cutting with discs or wheels with a cutting blade carried by a movable arm, e.g. pivoted
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
- H01L21/67778—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading involving loading and unloading of wafers
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
- B28D5/0082—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for supporting, holding, feeding, conveying or discharging work
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
- B28D5/0082—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for supporting, holding, feeding, conveying or discharging work
- B28D5/0094—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for supporting, holding, feeding, conveying or discharging work the supporting or holding device being of the vacuum type
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
- H01L21/67706—Mechanical details, e.g. roller, belt
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
- H01L21/681—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment using optical controlling means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
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- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
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Abstract
Description
更に、ウエーハを分割予定ラインに沿ってアブレーション加工することにより、ウエーハを分割予定ラインに沿って完全切断して個々のデバイスに分割する技術も提案されている。
しかるに、ウエーハをダイシングテープを介して支持する環状のフレームと仮置き手段を構成する一対の支持レールとの間には1〜2mm程度の隙間があり、環状のフレームをカセット載置手段に載置されたカセットに向けて移動する際に揺動するため、適正な画像を取得することができないという問題がある。
該仮置き手段は、該搬出・搬入手段による被加工物の搬出・搬入方向に被加工物を摺動可能に案内する第1の底壁と第1の側壁とを備えた第1の支持レールと、該第1の支持レールに対向して配設され被加工物を摺動可能に案内する第2の底壁と第2の側壁とを備えた第2の支持レールと、該第1の支持レールと該第2の支持レールとを互いに接近および離反する方向に作動せしめる支持レール作動手段と、該支持レール作動手段の負荷を検出する負荷検出手段とを具備しており、
該制御手段は、該支持レール作動手段を作動して該第1の支持レールと該第2の支持レールとを互いに接近させて該第1の側壁と該第2の側壁とで被加工物を挟持する際における該負荷検出手段からの負荷信号を入力し、該負荷検出手段からの負荷値が所定値に達したならば該第1の支持レールと該第2の支持レールとを互いに所定量離反する方向に作動するように該支持レール作動手段を作動せしめる、
ことを特徴とする加工装置が提供される。
また、上記仮置き手段の上側には第1の支持レールと第2の支持レール上に仮置きされた被加工物を撮像する撮像手段が配設されており、該撮像手段は加工された被加工物を上記搬出・搬入手段によってカセット載置手段に載置されたカセットに収容する際に、第1の支持レールと第2の支持レールに沿って摺動する被加工物の加工状態を撮像する。
図示の実施形態における切削装置は、略直方体状の装置ハウジング2を具備している。この装置ハウジング2内には、後述する被加工物組立体を保持する被加工物保持手段としてのチャックテーブル3が加工送り方向である矢印Xで示す方向(X軸方向) に移動可能に配設されている。チャックテーブル3は、テーブル本体31と、該テーブル本体31上に配設された吸着チャック32を具備しており、該吸着チャック32の上面である保持面上に後述する被加工物組立体の被加工物を図示しない吸引手段を作動することによって吸引保持するようになっている。また、チャックテーブル3は、図示しない回転機構によって回転可能に構成されている。なお、チャックテーブル31には、後述する被加工物組立体の環状のフレームを固定するためのクランプ機構33が配設されている。
図2の(a)には、被加工物としての半導体ウエーハの斜視図が示されている。図2の(a)に示す半導体ウエーハ10は、例えば厚さが600μmのシリコンウエーハからなっており、表面10aに複数の分割予定ライン101が格子状に形成されているとともに、該複数の分割予定ライン101によって区画された複数の領域にIC、LSI等のデバイス102が形成されている。
制御手段20は、先ずカセット載置手段7の図示しない昇降手段を作動してカセット載置手段7上に載置されたカセット4を上下動することにより、カセット4の所定位置に収容されている被加工物組立体100を搬出位置に位置付ける。次に、制御手段20は、搬出手段11の図示しない作動手段を作動して可動ブロック111を前進作動して搬出位置に位置付けられた被加工物組立体100の環状のフレームFを一対の把持片112によって把持し、図示しない作動手段により可動ブロック111を後進作動して一対の把持片112によって環状のフレームFが把持された被加工物組立体100を仮置き手段9を構成する第1の支持レール91の第1の底壁911および第2の支持レール92の第2の底壁921上に搬送する。
先ず制御手段20は、ステップS1において仮置き手段9の支持レール作動手段93を構成するパルスモータ96(M)を正転作動して第1の移動ブロック938aと第2の移動ブロック938bを互いに離反する方向に移動し、第1のリンク931aおよび931bと第2のリンク932aおよび932bによって連結された第1の支持レール91と第2の支持レール92が互いに接近する方向に移動せしめる。この結果、第1の支持レール91の第1の側壁912と第2の支持レール92の第2の側壁922によって被加工物組立体10の環状のフレームFが挟持され、パルスモータ96(M)の負荷が上昇する。次に、制御手段20はステップS2に進んで、パルスモータ96(M)の負荷を検出するトルク計測器97からの負荷信号を入力し、負荷トルクが1N・m以上であるか否かをチェックする。負荷トルクが1N・m未満である場合には、制御手段20は第1の支持レール91の第1の側壁912と第2の支持レール92の第2の側壁922によって環状のフレームFが確実に挟持されていないと判断し、ステップS1に戻ってステップS1およびステップS2を繰り返し実行する。上記ステップS2において負荷トルクが1N・m以上の場合には、制御手段20は第1の支持レール91の第1の側壁912と第2の支持レール92の第2の側壁922によって環状のフレームFが確実に挟持されて負荷トルクが所定値(1N・m)に達したと判断し、ステップS3に進んでパルスモータ96(M)を所定量例えば10パルス逆転作動する。この結果、第1の移動ブロック938aと第2の移動ブロック938bを互いに離反する方向に移動し、第1のリンク931aおよび931bと第2のリンク932aおよび932bによって連結された第1の支持レール91と第2の支持レール92が互いに離反する方向に所定量移動せしめられ、第1の支持レール91の第1の側壁912および第2の支持レール92の第2の側壁922と被加工物組立体10の環状のフレームFとの間にガタが生じない程度の極めて僅かの隙間(例えば、0.1mm)が生じる。従って、第1の支持レール91と第2の支持レール92に支持された被加工物組立体10は、環状のフレームFが第1の支持レール91の第1の側壁912と第2の支持レール92の第2の側壁922によって案内されて揺動することなく円滑に移動することができる。
3:チャックテーブ
4:スピンドルユニット
43:切削ブレード
5:アライメント手段
6:表示手段
7:カセット載置手段
8:カセット
9:仮置き手段
91:第1の支持レール
92:第2の支持レール
93:支持レール作動手段
95:雄ネジロッド
96:パルスモータ(M)
97:トルク計測器
10:半導体ウエーハ
100:被加工物組立体
11:搬出・搬入手段
12:第1の搬送手段
13:洗浄手段
14:第2の搬送手段
15:撮像手段置
20:制御手段
F:環状の支持フレーム
T:ダイシングテープ
Claims (3)
- 被加工物を保持する被加工物保持手段と、該被加工物保持手段に保持された被加工物を加工する加工手段と、複数の被加工物を収容したカセットが載置されるカセット載置手段と、該カセット載置手段に載置されたカセットから被加工物を搬出および搬入する搬出・搬入手段と、該搬出・搬入手段によって搬出された被加工物を仮置きする仮置き手段と、該仮置き手段に仮置きされた被加工物を被加工物保持手段に搬送する被加工物搬送手段と、制御手段と、を具備する加工装置であって、
該仮置き手段は、該搬出・搬入手段による被加工物の搬出・搬入方向に被加工物を摺動可能に案内する第1の底壁と第1の側壁とを備えた第1の支持レールと、該第1の支持レールに対向して配設され被加工物を摺動可能に案内する第2の底壁と第2の側壁とを備えた第2の支持レールと、該第1の支持レールと該第2の支持レールとを互いに接近および離反する方向に作動せしめる支持レール作動手段と、該支持レール作動手段の負荷を検出する負荷検出手段とを具備しており、
該制御手段は、該支持レール作動手段を作動して該第1の支持レールと該第2の支持レールとを互いに接近させて該第1の側壁と該第2の側壁とで被加工物を挟持する際における該負荷検出手段からの負荷信号を入力し、該負荷検出手段からの負荷値が所定値に達したならば該第1の支持レールと該第2の支持レールとを互いに所定量離反する方向に作動するように該支持レール作動手段を作動せしめる、
ことを特徴とする加工装置。 - 該被加工物は表面に複数の分割予定ラインによって区画された複数の領域にデバイスが形成されたウエーハであり、該ウエーハは裏面が環状のフレームの内側開口部を覆うように外周部が装着されたダイシングテープの表面に貼着される、請求項1記載の加工装置。
- 該仮置き手段の上側には該第1の支持レールと該第2の支持レール上に仮置きされた被加工物を撮像する撮像手段が配設されており、該撮像手段は加工された被加工物を該搬出・搬入手段によって該カセット載置手段に載置されたカセットに収容する際に、該第1の支持レールと該第2の支持レールに沿って移動する被加工物の加工状態を撮像する、請求項1又は2記載の加工装置。
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JP2015100786A JP6456768B2 (ja) | 2015-05-18 | 2015-05-18 | 加工装置 |
TW105111067A TWI672188B (zh) | 2015-05-18 | 2016-04-08 | 加工裝置 |
SG10201603207YA SG10201603207YA (en) | 2015-05-18 | 2016-04-22 | Processing apparatus |
US15/148,349 US10079166B2 (en) | 2015-05-18 | 2016-05-06 | Processing apparatus |
KR1020160058060A KR20160135659A (ko) | 2015-05-18 | 2016-05-12 | 가공 장치 |
CN201610325495.4A CN106166801B (zh) | 2015-05-18 | 2016-05-17 | 加工装置 |
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