JP2016216297A - 炭化ケイ素基板および炭化ケイ素基板の製造方法 - Google Patents
炭化ケイ素基板および炭化ケイ素基板の製造方法 Download PDFInfo
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- JP2016216297A JP2016216297A JP2015102026A JP2015102026A JP2016216297A JP 2016216297 A JP2016216297 A JP 2016216297A JP 2015102026 A JP2015102026 A JP 2015102026A JP 2015102026 A JP2015102026 A JP 2015102026A JP 2016216297 A JP2016216297 A JP 2016216297A
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- silicon carbide
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- carbide substrate
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- silicon
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- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 284
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 269
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 36
- 239000010703 silicon Substances 0.000 claims abstract description 36
- 230000000149 penetrating effect Effects 0.000 claims abstract description 3
- 238000000034 method Methods 0.000 claims description 73
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- 229910052799 carbon Inorganic materials 0.000 claims description 16
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 12
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- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 description 1
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- BUMGIEFFCMBQDG-UHFFFAOYSA-N dichlorosilicon Chemical compound Cl[Si]Cl BUMGIEFFCMBQDG-UHFFFAOYSA-N 0.000 description 1
- UBHZUDXTHNMNLD-UHFFFAOYSA-N dimethylsilane Chemical compound C[SiH2]C UBHZUDXTHNMNLD-UHFFFAOYSA-N 0.000 description 1
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- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
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- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
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- UIUXUFNYAYAMOE-UHFFFAOYSA-N methylsilane Chemical compound [SiH3]C UIUXUFNYAYAMOE-UHFFFAOYSA-N 0.000 description 1
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- 229910052757 nitrogen Inorganic materials 0.000 description 1
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- 238000004904 shortening Methods 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- LXEXBJXDGVGRAR-UHFFFAOYSA-N trichloro(trichlorosilyl)silane Chemical compound Cl[Si](Cl)(Cl)[Si](Cl)(Cl)Cl LXEXBJXDGVGRAR-UHFFFAOYSA-N 0.000 description 1
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 1
- 239000005052 trichlorosilane Substances 0.000 description 1
- PQDJYEQOELDLCP-UHFFFAOYSA-N trimethylsilane Chemical compound C[SiH](C)C PQDJYEQOELDLCP-UHFFFAOYSA-N 0.000 description 1
- VEDJZFSRVVQBIL-UHFFFAOYSA-N trisilane Chemical compound [SiH3][SiH2][SiH3] VEDJZFSRVVQBIL-UHFFFAOYSA-N 0.000 description 1
- 238000009279 wet oxidation reaction Methods 0.000 description 1
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Abstract
Description
前記シリコン基板上に積層された炭化ケイ素下地膜と、
前記炭化ケイ素下地膜を貫通する貫通孔と、
前記貫通孔に対応して前記シリコン基板と前記炭化ケイ素下地膜との間に位置する空孔と、
前記空孔の前記シリコン基板面を覆う酸化膜と、
を有することを特徴とする。
これにより、高品質な炭化ケイ素成長層を有する炭化ケイ素基板が得られる。
前記第1の炭化ケイ素基板に酸化処理を施し、第2の炭化ケイ素基板を形成する第2の工程と、
を有し、
前記第2の炭化ケイ素基板は、前記第1の炭化ケイ素基板における前記シリコン基板と前記炭化ケイ素下地膜との間の空孔に酸化膜が形成された基板であることを特徴とする。
本実施形態は、シリコン基板とシリコン基板上に積層された炭化ケイ素下地膜との間の空孔に酸化膜が形成された炭化ケイ素基板について説明をするものである。
炭化ケイ素基板1は、Si基板2(シリコン基板)と、Si基板2上に積層されたSiC下地膜3(炭化ケイ素下地膜)と、を有している。このような炭化ケイ素基板1は、SiC下地膜3をシード層として立方晶炭化ケイ素をエピタキシャル成長させるための下地として用いられる。
本実施形態は、第1実施形態で説明した炭化ケイ素基板1の上に、更に、SiC下地膜3をシード層として立方晶炭化ケイ素をエピタキシャル成長させた炭化ケイ素基板10について説明をするものである。
本実施形態は、第1実施形態で示した炭化ケイ素基板1を製造する方法(本発明の炭化ケイ素基板の製造方法の実施形態)について説明するものである。
本実施形態に係る炭化ケイ素基板1の製造方法は、[1]Si基板2の上面にSiC下地膜3を形成する下地膜形成工程(第1の工程)と、[2]SiC下地膜3に酸化処理を施し、Si基板2とSiC下地膜3との間に酸化膜33を形成する酸化工程(第2の工程)と、を有する。以下、各工程について順次説明する。
本実施形態は、第2実施形態で説明した炭化ケイ素基板10の製造方法を説明するものである。図4は、炭化ケイ素基板10を製造する方法を説明するための図である。
1a 炭化ケイ素基板
2 Si基板
3 SiC下地膜
4 SiC成長層
5 酸化被膜
10 炭化ケイ素基板
31 欠損部
32 空孔
33 酸化膜
Claims (11)
- シリコン基板と、
前記シリコン基板上に積層された炭化ケイ素下地膜と、
前記炭化ケイ素下地膜を貫通する貫通孔と、
前記貫通孔に対応して前記シリコン基板と前記炭化ケイ素下地膜との間に位置する空孔と、
前記空孔の前記シリコン基板面を覆う酸化膜と、
を有することを特徴とする炭化ケイ素基板。 - 前記炭化ケイ素下地膜の厚さは、2nm以上100nm以下であることを特徴とする請求項1に記載の炭化ケイ素基板。
- 前記酸化膜の厚さは、3nm以上300nm以下であることを特徴とする請求項1または2に記載の炭化ケイ素基板。
- 更に、前記炭化ケイ素下地膜上に炭化ケイ素成長層を有することを特徴とする請求項1ないし3のいずれか1項に記載の炭化ケイ素基板。
- シリコン基板の一方の面側に炭化ケイ素下地膜を形成し、第1の炭化ケイ素基板を形成する第1の工程と、
前記第1の炭化ケイ素基板に酸化処理を施し、第2の炭化ケイ素基板を形成する第2の工程と、
を有し、
前記第2の炭化ケイ素基板は、前記第1の炭化ケイ素基板における前記シリコン基板と前記炭化ケイ素下地膜との間の空孔に酸化膜が形成された基板であることを特徴とする炭化ケイ素基板の製造方法。 - 前記酸化処理は、前記第1の炭化ケイ素基板を、酸素系ガス雰囲気中で加熱する処理であることを特徴とする請求項5に記載の炭化ケイ素基板の製造方法。
- 更に、前記第2の炭化ケイ素基板にフッ酸を含む溶液を用いたエッチング処理を施し、第3の炭化ケイ素基板を形成する第3の工程を有することを特徴とする請求項5または6に記載の炭化ケイ素基板の製造方法。
- 前記第1の工程は、炭素系ガス雰囲気中で前記シリコン基板を加熱する工程を含むことを特徴とする請求項5ないし7のいずれか1項に記載の炭化ケイ素基板の製造方法。
- 前記第1の工程から前記第2の工程への移行に際し、前記第1の炭化ケイ素基板の温度を常温以上に保つことを特徴とする請求項5ないし8のいずれか1項に記載の炭化ケイ素基板の製造方法。
- 更に、前記第3の炭化ケイ素基板に炭化ケイ素をエピタキシャル成長させる第4の工程を有することを特徴とする請求項7ないし9のいずれか1項に記載の炭化ケイ素基板の製造方法。
- 前記第2の工程における加熱温度は、前記第1の工程における加熱温度より低い温度であることを特徴とする請求項5ないし10のいずれか1項に記載の炭化ケイ素基板の製造方法。
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US15/153,319 US9882010B2 (en) | 2015-05-19 | 2016-05-12 | Silicon carbide substrate and method for producing silicon carbide substrate |
CN201610319055.8A CN106169497B (zh) | 2015-05-19 | 2016-05-12 | 碳化硅基板以及碳化硅基板的制造方法 |
TW105115077A TW201700802A (zh) | 2015-05-19 | 2016-05-16 | 碳化矽基板及碳化矽基板之製造方法 |
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