JP2016213336A - 封止材用シリコーン樹脂組成物及び該組成物を用いたパワー半導体モジュール - Google Patents
封止材用シリコーン樹脂組成物及び該組成物を用いたパワー半導体モジュール Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 36
- 239000011342 resin composition Substances 0.000 title claims abstract description 34
- 229920002050 silicone resin Polymers 0.000 title claims abstract description 33
- 239000000565 sealant Substances 0.000 title abstract 2
- 230000035515 penetration Effects 0.000 claims abstract description 23
- 229920001296 polysiloxane Polymers 0.000 claims description 51
- 230000001070 adhesive effect Effects 0.000 claims description 29
- 239000000853 adhesive Substances 0.000 claims description 28
- 239000003566 sealing material Substances 0.000 claims description 20
- 239000003431 cross linking reagent Substances 0.000 claims description 19
- 239000003795 chemical substances by application Substances 0.000 claims description 17
- -1 polysiloxane Polymers 0.000 claims description 15
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 10
- 239000000203 mixture Substances 0.000 claims description 8
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 7
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 claims description 4
- 125000001183 hydrocarbyl group Chemical group 0.000 claims 4
- 239000000463 material Substances 0.000 claims 1
- 238000005336 cracking Methods 0.000 abstract description 2
- 238000011417 postcuring Methods 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 description 17
- 239000002184 metal Substances 0.000 description 17
- 238000012360 testing method Methods 0.000 description 15
- 150000002430 hydrocarbons Chemical group 0.000 description 13
- 238000002156 mixing Methods 0.000 description 9
- 238000001723 curing Methods 0.000 description 8
- 238000000034 method Methods 0.000 description 7
- 238000012644 addition polymerization Methods 0.000 description 5
- 238000013329 compounding Methods 0.000 description 4
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 125000001931 aliphatic group Chemical group 0.000 description 3
- 125000002029 aromatic hydrocarbon group Chemical group 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 238000009833 condensation Methods 0.000 description 3
- 230000005494 condensation Effects 0.000 description 3
- 125000004122 cyclic group Chemical group 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 3
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 3
- 239000003960 organic solvent Substances 0.000 description 3
- 229930195734 saturated hydrocarbon Natural products 0.000 description 3
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 2
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 2
- OFBQJSOFQDEBGM-UHFFFAOYSA-N Pentane Chemical compound CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000004132 cross linking Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005304 joining Methods 0.000 description 2
- 238000004898 kneading Methods 0.000 description 2
- 239000002075 main ingredient Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 2
- 238000007586 pull-out test Methods 0.000 description 2
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 description 2
- 229920005992 thermoplastic resin Polymers 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- UOCLXMDMGBRAIB-UHFFFAOYSA-N 1,1,1-trichloroethane Chemical compound CC(Cl)(Cl)Cl UOCLXMDMGBRAIB-UHFFFAOYSA-N 0.000 description 1
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- XSTXAVWGXDQKEL-UHFFFAOYSA-N Trichloroethylene Chemical group ClC=C(Cl)Cl XSTXAVWGXDQKEL-UHFFFAOYSA-N 0.000 description 1
- 235000010724 Wisteria floribunda Nutrition 0.000 description 1
- 125000005370 alkoxysilyl group Chemical group 0.000 description 1
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 1
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 description 1
- 230000001588 bifunctional effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000008393 encapsulating agent Substances 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000003925 fat Substances 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 150000008282 halocarbons Chemical class 0.000 description 1
- 238000013007 heat curing Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 125000005375 organosiloxane group Chemical group 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 150000003058 platinum compounds Chemical class 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000004382 potting Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 150000003284 rhodium compounds Chemical class 0.000 description 1
- 238000009864 tensile test Methods 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- UBOXGVDOUJQMTN-UHFFFAOYSA-N trichloroethylene Natural products ClCC(Cl)Cl UBOXGVDOUJQMTN-UHFFFAOYSA-N 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
- H01L23/296—Organo-silicon compounds
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
- C08L83/04—Polysiloxanes
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- C09J183/00—Adhesives based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Adhesives based on derivatives of such polymers
- C09J183/04—Polysiloxanes
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
- C09D183/04—Polysiloxanes
- C09D183/08—Polysiloxanes containing silicon bound to organic groups containing atoms other than carbon, hydrogen, and oxygen
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/22—Polysiloxanes containing silicon bound to organic groups containing atoms other than carbon, hydrogen and oxygen
- C08G77/28—Polysiloxanes containing silicon bound to organic groups containing atoms other than carbon, hydrogen and oxygen sulfur-containing groups
-
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- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
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- C08L2201/00—Properties
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- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L2203/00—Applications
- C08L2203/20—Applications use in electrical or conductive gadgets
- C08L2203/206—Applications use in electrical or conductive gadgets use in coating or encapsulating of electronic parts
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
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- C08L2205/00—Polymer mixtures characterised by other features
- C08L2205/02—Polymer mixtures characterised by other features containing two or more polymers of the same C08L -group
- C08L2205/025—Polymer mixtures characterised by other features containing two or more polymers of the same C08L -group containing two or more polymers of the same hierarchy C08L, and differing only in parameters such as density, comonomer content, molecular weight, structure
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- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
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- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
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Abstract
【解決手段】 硬化後に、針入度が35〜70となり、且つ表面にCu層を配置した絶縁回路基板との接着強度が50kPa〜180kPaとなるシリコーン樹脂組成物をパワー半導体モジュールの封止材として用いる。
【選択図】図1
Description
このようなシリコーン樹脂組成物は、主剤(A)100質量部に対して、架橋剤(B)を5質量部〜20質量部、且つ接着改良剤(C)を0.2質量部〜3質量部加えることによって調製することができる。
主剤(A)の100質量部に対し、架橋剤(B)を1質量部、5質量部、10質量部、20質量部、22質量部、25質量部、30質量部の7段階に変化させ、架橋剤(B)を0質量部、0.2質量部、0.5質量部、1質量部、3質量部、5質量部の6段階に変化させて混練し、41種類のシリコーン樹脂組成物を調製した。
針入度は、JIS K2220に準拠し、1/4コーンを使用して、荷重9.38gを加え、針の貫入度を測定した。
図4(a)を参照し、試験サンプルについて説明する。接着力の測定に用いる絶縁回路基板2として、アルミナ製の絶縁基板2aの両面にCu膜を接合したものを使用した。絶縁基板2aの外形は、幅35.2mm×長さ52.5mm×厚さ0.7mmで、外周に沿って幅1mmを残して、その内側はすべてCu膜2b、2c(各厚さ0.05mm)に覆われている。
パワー半導体モジュール用パッケージは、富士電機製M249(外形62mm×108mm)を使用した。絶縁回路基板としては、M249に適合するアルミナ基板にCu膜を接合したDCB基板を用い、パワー半導体素子としてIGBT1個とFWD素子2個を搭載して、パッケージに組み込んだ。このようにして組み立てたパッケージを150℃で、60分間加熱して十分乾燥させた後、常温まで冷却し、上述の配合量を変えたシリコーン樹脂組成物を注入し、80℃で60分間加熱して硬化させた。
上記の手順で組み立てた半導体モジュールを高温加湿槽に入れ、85℃、85%RHの下で24時間放置した後、高温加湿槽から取り出して室温まで冷却し、次いで120℃の熱板上に60分間放置したものを目視で観察して、気泡発生の有無を評価する試験である。
上記の手順で組み立てた半導体モジュールを恒温槽に入れ、215℃で2000時間放置した後、恒温槽から取り出して室温まで冷却し、エミッター端子とコレクタ端子との間に4.1kVの電圧を10秒間印加し、絶縁破壊の有無を判定した。
上記の手順で組み立てた半導体モジュールを温度サイクル試験機に入れ、−40℃での70分間保持と、125℃での70分間保持を交互に300サイクル繰り返す温度サイクル試験を実施し、温度サイクル試験機から取り出して目視で観察し、シリコーンゲルの亀裂を評価する試験である。
表1には、実施例1〜10、比較例1〜31の試験結果が示されている。表1中の不良モードの欄の○印は、試験においてその不良モードが観測されたことを示す。
2 絶縁回路基板
2a 絶縁基板
2b 第1金属層(Cu膜)
2c 第2金属層(Cu膜)
3 金属板(Cu板)
4 ボンディングワイヤ
5 外部端子
6a,6b 接合部材
7 ケース
8 封止材(シリコーンゲル)
9 封止材と第1金属層との界面
10 パワー半導体モジュール
11 気泡
12 ビーカー
Claims (4)
- パワー半導体モジュールの封止材として用いるシリコーン樹脂組成物であって、
硬化後に、針入度が35〜70となり、且つ表面にCu層を配置した絶縁回路基板との接着強度が50kPa〜180kPaとなることを特徴とする封止材用シリコーン樹脂組成物。 - 前記シリコーン樹脂組成物は、下記(A)の主剤100質量部に対し、下記(B)の架橋剤5質量部〜20質量部と、下記(C)の接着改良剤0.2質量部〜3質量部と、を含有する請求項1記載の封止材用シリコーン樹脂組成物。
(A)(CH2=CH)SiO1.5単位、RSiO1.5単位、R(CH2=CH)SiO単位、R2SiO単位、R3SiO0.5単位、R2(CH2=CH)SiO0.5単位、及びRH(CH2=CH)SiO0.5単位(ここで、RはSiに結合する炭化水素基である)からなる群から選択された構造単位で構成され、且つ分子中にSi原子に結合したビニル基を平均で1.5個以上含有する有機ポリシロキサン。
(B)HSiO1.5単位、RSiO1.5単位、RHSiO単位、R2SiO単位、RH2SiO0.5単位、R2HSiO0.5単位及びR3SiO0.5単位(ここで、RはSiに結合する炭化水素基)からなる群から選択された構造単位で構成され、且つ分子中にSi原子に結合したH基を平均で1.5個以上含有する有機ポリシロキサン。
(C) H3SiO0.5単位を必須単位として有し、HSiO1.5単位、RSiO1.5単位、RHSiO単位、R2SiO単位、RH2SiO0.5単位、R2HSiO0.5単位、R3SiO0.5単位(ここで、RはSiに結合する炭化水素基である)からなる群から選択された構造単位で構成され、且つ分子中にH3SiO0.5単位を平均で0.1個以上含有する有機ポリシロキサン。 - 前記(A)、前記(B)、前記(C)において、
Siに結合する炭化水素基Rは、全てメチル基、又はメチル基とフェニル基が混在していてもよいが、全てフェニル基ではない、請求項2に記載の封止材用シリコーン樹脂組成物。 - 請求項1〜3のいずれか一項に記載のシリコーン樹脂組成物を硬化させて封止したパワー半導体モジュール。
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US15/090,861 US9617455B2 (en) | 2015-05-11 | 2016-04-05 | Silicone resin composition for sealant and power semiconductor module that uses this composition |
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