JP2016184618A - 電子デバイス、その製造方法、および、回路基板 - Google Patents
電子デバイス、その製造方法、および、回路基板 Download PDFInfo
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Abstract
【解決手段】基板10と、基板10に設けられた、電子部品30を搭載するための領域20と、領域20内に配置され、電子部品30と電気的に接続される第1回路パターン40と、第1回路パターン40に接続されて、領域20の外側から第1回路パターンに電流を供給する第2回路パターン50と備える。第1回路パターン40の一部または全部は、粒径が1μm未満の導電性ナノサイズ粒子を焼結した層によって構成されている。第2回路パターンは、第1回路パターンよりも厚さが大きい。
【選択図】図1
Description
上述の電子デバイスの第1の製造方法を図2を用いて説明する。
第2の製造方法を図3を用いて説明する。
第3の製造方法を図4(a)〜(h)を用いて説明する。
第4の製造方法では、第2回路パターン50を光照射により形成する。
第4の製造方法では、基板10上に第2回路パターン50を形成した後で、第1〜第3の製造方法のいずれかを行う方法について説明したが、第5の製造方法では、第4の製造方法により第2回路パターン50となる塗膜までを形成した後、光照射を行わないまま、第1〜第3の製造方法を行って、第1回路パターン40となる膜41までを形成する。
Claims (9)
- 基板と、前記基板に設けられた、電子部品を搭載するための領域と、前記領域内に配置され、前記電子部品と電気的に接続される第1回路パターンと、前記第1回路パターンに接続されて、前記領域の外側から前記第1回路パターンに電流を供給する第2回路パターンと、前記領域に搭載され、前記第1回路パターンに接続された電子部品とを有し、
前記第1回路パターンの一部または全部は、粒径が1μm未満である導電性ナノサイズ粒子を焼結した層によって構成され、
前記第2回路パターンは、前記第1回路パターンよりも厚さが大きいことを特徴とする電子デバイス。 - 請求項1に記載の電子デバイスであって、前記第2回路パターンの一部または全部は、導電性粒子を焼結した層によって構成され、前記導電性粒子は、粒径が1μm未満の導電性ナノサイズ粒子と、粒径1μm以上の導電性マイクロサイズ粒子とを含むことを特徴とする電子デバイス。
- 請求項1または2に記載の電子デバイスであって、前記第1回路パターンは、前記導電性ナノサイズ粒子を焼結した層に連続する非導電性層を含み、前記非導電性層は、絶縁膜で被覆された導電性ナノサイズ粒子を含有することを特徴とする電子デバイス。
- 請求項1ないし3のいずれか1項に記載の電子デバイスであって、前記第1回路パターンの前記導電性ナノサイズ粒子を焼結した層の幅は、前記第2回路パターンよりも狭いことを特徴とする電子デバイス。
- 請求項3に記載の電子デバイスであって、前記第2回路パターンは、前記電子部品を搭載するための前記領域の両脇に配置され、
前記第1回路パターンは、前記領域内に少なくとも一対配置され、一対の前記第1回路パターンは、前記領域の両脇の前記第2回路パターンとそれぞれ接続され、
前記一対の第1回路パターンの間には、前記非導電性層が配置されていることを特徴とする電子デバイス。 - 粒径が1μm未満である導電性ナノサイズ粒子と絶縁材料とが分散された溶液、もしくは、絶縁材料層で被覆された前記導電性ナノサイズ粒子が分散された溶液を、基板表面に所望の形状で塗布し、膜を形成する第1工程と、
前記膜に所定のパターンで光を照射し、前記光によって導電性ナノサイズ粒子を焼結し、前記所定のパターンの導電性ナノサイズ粒子層である第1回路パターンを形成する第2工程と、
前記膜上に電子部品を搭載した後、前記電子部品の電極を前記導電性ナノサイズ粒子層に接続する第3工程と、
前記基板表面に、前記第1回路パターンと連続する、第2回路パターンを形成する第4工程と、を有し、
前記第2回路パターンは、前記第1回路パターンより厚い膜厚で形成されることを特徴とする電子デバイスの製造方法。 - 請求項6に記載の電子デバイス製造方法であって、前記基板として光を透過する基板を用い、
前記第4工程は、粒径が1μm未満である導電性ナノサイズ粒子と、粒径が1μm以上である導電性マイクロサイズ粒子と、絶縁材料とが分散された溶液、もしくは、絶縁材料層でそれぞれ被覆された前記導電性ナノサイズ粒子および前記導電性マイクロサイズ粒子が分散された溶液を、前記基板の表面に所望の形状で塗布し、前記絶縁材料で被覆された前記導電性ナノサイズ粒子と前記導電性マイクロサイズ粒子の第2の膜を形成する第4−1工程と、
前記第2の膜に、前記基板の裏面側から、前記第2の膜に所定のパターンで光を照射して、前記光によって導電性ナノサイズ粒子と導電性マイクロサイズ粒子とを焼結し、第2回路パターンを形成する第4−2工程とを有することを特徴とする電子デバイスの製造方法。 - 請求項6または7に記載の電子デバイス製造方法であって、前記基板として光を透過する基板を用い、
前記第2工程では、前記光を基板の裏面側から、前記基板を通して前記膜に照射することを特徴とする電子デバイスの製造方法。 - 基板と、前記基板に設けられた、電子部品を搭載するための領域と、前記領域内に配置され、前記電子部品と電気的に接続される第1回路パターンと、前記第1回路パターンに接続されて、前記領域の外側から前記第1回路パターンに電流を供給する第2回路パターンとを有し、
前記第1回路パターンの一部または全部は、粒径が1μm未満である導電性ナノサイズ粒子を焼結した層によって構成され、
前記第2回路パターンは、前記第1回路パターンよりも厚さが大きいことを特徴とする回路基板。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015063313A JP6630053B2 (ja) | 2015-03-25 | 2015-03-25 | 電子デバイスの製造方法 |
PCT/JP2016/058525 WO2016152725A1 (ja) | 2015-03-25 | 2016-03-17 | 電子デバイス、その製造方法、および、回路基板 |
CN201680016340.0A CN107409466A (zh) | 2015-03-25 | 2016-03-17 | 电子器件及其制造方法以及电路基板 |
US15/560,439 US10383214B2 (en) | 2015-03-25 | 2016-03-17 | Electronic device, method for producing same, and circuit substrate |
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