JP2016175807A - 結晶積層構造体 - Google Patents
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Abstract
Description
(結晶積層構造体の構成)
図1は、実施の形態に係る結晶積層構造体1の垂直断面図である。結晶積層構造体1は、Ga2O3系基板10と、Ga2O3系基板10の主面11上にエピタキシャル結晶成長により形成されたβ−Ga2O3系単結晶膜12を有する。
以下に、本実施の形態に係るβ−Ga2O3系単結晶膜12の成長に用いる気相成長装置の構造の一例について説明する。
β−Ga2O3系単結晶膜12の成長には、特願2014−088589に開示されたβ−Ga2O3系単結晶膜の成長技術を用いることができる。以下に、本実施の形態に係るβ−Ga2O3系単結晶膜12の成長工程の一例について説明する。
以下の表1〜表3に、異なる成長条件で形成した複数のβ−Ga2O3系単結晶膜12のSi濃度及びキャリア密度の測定結果を示す。
上記実施の形態によれば、HVPE法を用いてβ−Ga2O3系単結晶を成長させながらドーパントを添加することにより、MBE法やEFG法を用いる場合よりも広い範囲でβ−Ga2O3系単結晶のドーパントの濃度を制御することができる。また、イオン注入法を用いる場合のように、ドーパントの注入深さが限定されたり、イオンビームにより結晶性が劣化したりするという問題が生じない。
Claims (10)
- Ga2O3系基板と、
前記Ga2O3系基板の主面上にエピタキシャル結晶成長により形成された、Cl及び結晶成長と並行してドーピングされた濃度1×1013atoms/cm3以上5.0×1020atoms/cm3以下のドーパントを含むβ−Ga2O3系単結晶膜と、
を含む結晶積層構造体。 - 前記β−Ga2O3系単結晶膜のCl濃度は、5×1016atoms/cm3以下である、
請求項1に記載の結晶積層構造体。 - 前記ドーパントがSiである、
請求項1又は2に記載の結晶積層構造体。 - 前記ドーパントの濃度が6.5×1015atoms/cm3以上2.1×1020atoms/cm3以下である、
請求項1〜3のいずれか1項に記載の結晶積層構造体。 - 前記ドーパントの添加により発生するキャリアの密度が1×1013cm−3以上5.0×1020cm−3以下である、
請求項1〜3のいずれか1項に記載の結晶積層構造体。 - 前記ドーパントの添加により発生するキャリアの密度が3.2x1015cm−3以上1.8x1018cm−3以下である、
請求項5に記載の結晶積層構造体。 - 前記β−Ga2O3系単結晶膜はβ−Ga2O3結晶膜である、
請求項1〜6のいずれか1項に記載の結晶積層構造体。 - 前記Ga2O3系基板の前記主面の面方位は、(001)、(010)、(−201)、又は(101)である、
請求項1〜7のいずれか1項に記載の結晶積層構造体。 - 前記ドーパントの原料ガスがSiCl4ガスである、
請求項3に記載の結晶積層構造体。 - β−Ga2O3系単結晶膜の厚さが1000nm以上である、
請求項1〜9のいずれか1項に記載の結晶積層構造体。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015058518A JP6376600B2 (ja) | 2015-03-20 | 2015-03-20 | 結晶積層構造体の製造方法 |
PCT/JP2016/054620 WO2016152335A1 (ja) | 2015-03-20 | 2016-02-17 | 結晶積層構造体 |
CN201680016988.8A CN107532326B (zh) | 2015-03-20 | 2016-02-17 | 晶体层叠结构体 |
EP16768238.4A EP3272915B1 (en) | 2015-03-20 | 2016-02-17 | Method for providing a crystal laminate structure |
US15/559,167 US10538862B2 (en) | 2015-03-20 | 2016-02-17 | Crystal laminate structure |
TW105105677A TWI684662B (zh) | 2015-03-20 | 2016-02-25 | 結晶積層構造體 |
US16/702,186 US11047067B2 (en) | 2015-03-20 | 2019-12-03 | Crystal laminate structure |
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JP2015058518A JP6376600B2 (ja) | 2015-03-20 | 2015-03-20 | 結晶積層構造体の製造方法 |
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JP2016175807A true JP2016175807A (ja) | 2016-10-06 |
JP2016175807A5 JP2016175807A5 (ja) | 2017-03-09 |
JP6376600B2 JP6376600B2 (ja) | 2018-08-22 |
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US (2) | US10538862B2 (ja) |
EP (1) | EP3272915B1 (ja) |
JP (1) | JP6376600B2 (ja) |
CN (1) | CN107532326B (ja) |
TW (1) | TWI684662B (ja) |
WO (1) | WO2016152335A1 (ja) |
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KR20200002789A (ko) * | 2017-01-25 | 2020-01-08 | 상하이 인스티튜트 오브 옵틱스 앤 파인 메카닉스, 차이니즈 아카데미 오브 사이언시스 | 도핑된 산화갈륨 결정질 재료 및 그의 제조 방법과 응용 |
JP2021038117A (ja) * | 2019-09-03 | 2021-03-11 | 信越化学工業株式会社 | 積層構造体、半導体装置及び半導体システム |
WO2021210476A1 (ja) * | 2020-04-14 | 2021-10-21 | 株式会社タムラ製作所 | 半導体膜及びその製造方法 |
JP7460975B2 (ja) | 2017-08-21 | 2024-04-03 | 株式会社Flosfia | 結晶膜の製造方法 |
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JP6376600B2 (ja) * | 2015-03-20 | 2018-08-22 | 株式会社タムラ製作所 | 結晶積層構造体の製造方法 |
WO2018052097A1 (ja) * | 2016-09-15 | 2018-03-22 | 株式会社Flosfia | 半導体膜の製造方法及び半導体膜並びにドーピング用錯化合物及びドーピング方法 |
JP7008293B2 (ja) * | 2017-04-27 | 2022-01-25 | 国立研究開発法人情報通信研究機構 | Ga2O3系半導体素子 |
JP7141849B2 (ja) * | 2018-05-16 | 2022-09-26 | 株式会社サイオクス | 窒化物結晶基板および窒化物結晶基板の製造方法 |
US11535951B1 (en) * | 2018-06-06 | 2022-12-27 | United States Of America As Represented By The Secretary Of The Air Force | Optimized thick heteroepitaxial growth of semiconductors with in-situ substrate pretreatment |
CN110323291B (zh) * | 2019-04-22 | 2020-07-10 | 湖北大学 | 基于(GaY)2O3非晶薄膜的高增益日盲紫外光探测器及其制备方法 |
KR20220052931A (ko) * | 2019-08-27 | 2022-04-28 | 신에쓰 가가꾸 고교 가부시끼가이샤 | 적층구조체 및 적층구조체의 제조방법 |
JP7093329B2 (ja) * | 2019-09-02 | 2022-06-29 | 信越化学工業株式会社 | 積層構造体、半導体装置及び半導体システム |
CN112853468A (zh) * | 2020-12-31 | 2021-05-28 | 杭州富加镓业科技有限公司 | 一种基于深度学习和热交换法的导电型氧化镓制备方法 |
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Cited By (7)
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KR20200002789A (ko) * | 2017-01-25 | 2020-01-08 | 상하이 인스티튜트 오브 옵틱스 앤 파인 메카닉스, 차이니즈 아카데미 오브 사이언시스 | 도핑된 산화갈륨 결정질 재료 및 그의 제조 방법과 응용 |
JP2020505305A (ja) * | 2017-01-25 | 2020-02-20 | 中国科学院上海光学精密机械研究所 | ドープされた酸化ガリウム結晶材料、その製造方法及び使用 |
KR102414621B1 (ko) * | 2017-01-25 | 2022-06-30 | 상하이 인스티튜트 오브 옵틱스 앤 파인 메카닉스, 차이니즈 아카데미 오브 사이언시스 | 도핑된 산화갈륨 결정질 재료 및 그의 제조 방법과 응용 |
JP7460975B2 (ja) | 2017-08-21 | 2024-04-03 | 株式会社Flosfia | 結晶膜の製造方法 |
JP2021038117A (ja) * | 2019-09-03 | 2021-03-11 | 信越化学工業株式会社 | 積層構造体、半導体装置及び半導体システム |
JP7097861B2 (ja) | 2019-09-03 | 2022-07-08 | 信越化学工業株式会社 | 積層構造体、半導体装置及び半導体システム |
WO2021210476A1 (ja) * | 2020-04-14 | 2021-10-21 | 株式会社タムラ製作所 | 半導体膜及びその製造方法 |
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CN107532326A (zh) | 2018-01-02 |
TWI684662B (zh) | 2020-02-11 |
WO2016152335A1 (ja) | 2016-09-29 |
US20180073164A1 (en) | 2018-03-15 |
JP6376600B2 (ja) | 2018-08-22 |
TW201641735A (zh) | 2016-12-01 |
US10538862B2 (en) | 2020-01-21 |
EP3272915A1 (en) | 2018-01-24 |
US11047067B2 (en) | 2021-06-29 |
CN107532326B (zh) | 2021-09-14 |
EP3272915A4 (en) | 2018-11-14 |
US20200102667A1 (en) | 2020-04-02 |
EP3272915B1 (en) | 2023-08-23 |
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