JP2016149389A - 半導体発光装置及び蛍光体層の形成方法 - Google Patents
半導体発光装置及び蛍光体層の形成方法 Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
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- H—ELECTRICITY
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- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
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- H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
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- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
Abstract
Description
0<x≦1、
0.6<a1<0.95、
2<b1<3.9、
0.25<c1<0.45、
4<d1<5.7
0<x≦1、
0.93<a2<1.3、
4.0<b2<5.8、
0.6<c2<1、6<d2<11
図3(b)は、半導体発光装置101の実装面(図2の下面)の模式平面図である。
図8は、エアロゾルデポジション装置の一例の模式図である。
図5は、半導体発光装置102の実装面側の模式平面図であり、図4の下面図に対応する。
Claims (9)
- 発光素子と、
前記発光素子上に設けられた蛍光体層であって、複数の蛍光体粒子と、前記複数の蛍光体粒子の間で凝集して前記複数の蛍光体粒子どうしを結合し、前記蛍光体粒子よりもサイズが小さい複数の無機粒子とを有する蛍光体層と、
を備えた半導体発光装置。 - 前記無機粒子の熱伝導率は、20W/m・K以上である請求項1記載の半導体発光装置。
- 前記蛍光体粒子の表面および前記無機粒子の表面を覆う透明無機膜をさらに備えた請求項1または2に記載の半導体発光装置。
- 前記透明無機膜の一部は、前記蛍光体粒子の表面および前記無機粒子の表面よりも内部における前記複数の無機粒子間の隙間、および前記無機粒子と前記蛍光体粒子との間の隙間に設けられている請求項3記載の半導体発光装置。
- 前記蛍光体層は樹脂を含まず、
前記複数の無機粒子の間、および前記無機粒子と前記蛍光体粒子との間に空隙が形成されている請求項1または2に記載の半導体発光装置。 - 前記複数の無機粒子間の隙間、および前記無機粒子と前記蛍光体粒子との間の隙間に設けられた樹脂をさらに備えた請求項1または2に記載の半導体発光装置。
- 発光素子を含むウェーハ上に、複数の蛍光体粒子と、前記蛍光体粒子よりもサイズが小さい複数の無機粒子とを、同時または別々にキャリアガスとともに吹き付けて、前記ウェーハ上に、前記複数の蛍光体粒子と前記複数の無機粒子との凝集体を形成する蛍光体層の形成方法。
- 発光素子を含むウェーハ上に、溶剤と、前記溶剤中に分散された複数の蛍光体粒子および前記蛍光体粒子よりもサイズが小さい複数の無機粒子と、を含む溶液を供給し、
前記溶剤を揮発させ、前記ウェーハ上に、前記複数の蛍光体粒子と前記複数の無機粒子との凝集体を形成する蛍光体層の形成方法。 - 前記凝集体に透明樹脂を含浸する工程をさらに備えた請求項7または8に記載の蛍光体層の形成方法。
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JP2015024066A JP6646934B2 (ja) | 2015-02-10 | 2015-02-10 | 半導体発光装置及び半導体発光装置の製造方法 |
TW104127682A TW201630219A (zh) | 2015-02-10 | 2015-08-25 | 半導體發光裝置及螢光體層之形成方法 |
US14/835,937 US20160233389A1 (en) | 2015-02-10 | 2015-08-26 | Semiconductor light emitting device and method for forming phosphor layer |
EP15182529.6A EP3057145B1 (en) | 2015-02-10 | 2015-08-26 | Semiconductor light emitting device and method for forming phosphor layer |
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Cited By (7)
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WO2019116916A1 (ja) * | 2017-12-12 | 2019-06-20 | 日本電気硝子株式会社 | 波長変換部材及びその製造方法、並びに発光装置 |
JP2019105826A (ja) * | 2017-12-12 | 2019-06-27 | 日本電気硝子株式会社 | 波長変換部材及びその製造方法、並びに発光装置 |
WO2019239850A1 (ja) * | 2018-06-12 | 2019-12-19 | 日本電気硝子株式会社 | 波長変換部材及び波長変換素子、並びにそれらの製造方法、並びに発光装置 |
EP3699652A4 (en) * | 2017-10-19 | 2020-08-26 | Panasonic Intellectual Property Management Co., Ltd. | WAVELENGTH CONVERTER |
US11177417B2 (en) | 2017-02-13 | 2021-11-16 | Nichia Corporation | Light emitting device including phosphor layer with protrusions and recesses and method for manufacturing same |
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JP6868842B2 (ja) * | 2016-10-25 | 2021-05-12 | パナソニックIpマネジメント株式会社 | 波長変換デバイス、光源装置、照明装置、及び、投写型映像表示装置 |
US10700242B2 (en) * | 2016-12-27 | 2020-06-30 | Nichia Corporation | Method of producing wavelength conversion member |
JP7053252B2 (ja) * | 2017-12-26 | 2022-04-12 | 日機装株式会社 | 半導体発光装置 |
JP2020095233A (ja) * | 2018-06-12 | 2020-06-18 | 日本電気硝子株式会社 | 波長変換部材及び波長変換素子、並びにそれらの製造方法、並びに発光装置 |
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US20160233389A1 (en) | 2016-08-11 |
EP3057145B1 (en) | 2020-06-10 |
TW201630219A (zh) | 2016-08-16 |
EP3057145A1 (en) | 2016-08-17 |
JP6646934B2 (ja) | 2020-02-14 |
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