JP2012089652A - 半導体発光デバイス - Google Patents
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0091—Scattering means in or on the semiconductor body or semiconductor body package
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
- H01L33/18—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous within the light emitting region
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Abstract
【解決手段】偏光光を放射する窒化物半導体発光素子402と、窒化物半導体発光素子402の光取り出し面を覆っており、樹脂と、樹脂内に分散された非蛍光体粒子とを含む光取り出し制御層404とを備え、光取り出し制御層404は、非蛍光体粒子を0.01vol%以上10vol%以下の割合で含み、非蛍光体粒子の直径は、30nm以上150nm以下である。
【選択図】図4
Description
図4(a)は、実施の形態1の窒化物半導体発光デバイスの封止形態を示す図である。
実施の形態2について、図4(b)を用いて説明する。図4(b)において、図4(a)と同じ構成要素については同じ符号を用い、説明を省略する。また、製造方法に関しても、実施の形態1と同様の方法で製造が可能であるため、説明は省略する。
実施の形態3について、図4(c)を用いて説明する。図4(c)において、図4(a)または図4(b)と同じ構成要素については同じ符号を用い、説明を省略する。また製造方法に関しても、実施の形態1と同様の方法で製造が可能であるため、説明は省略する。
実施の形態4について、図5(a)を用いて説明する。図5(a)において、図4(a)または図4(c)と同じ構成要素については同じ符号を用い、説明を省略する。また製造方法に関しても、実施の形態1と同様の方法で製造が可能であるため、説明は省略する。
302 偏光光を発する発光素子
303 光透過性樹脂部
304 基本容器
305 半導体素体
306 注型材料
307 発光物質顔料
308 パッケージ
309 光半導体素子
310 媒体
311 蛍光体粒子
401 実装基板
402 窒化物半導体発光素子
403 第1の封止部
404 光取り出し制御層
405 第2の封止部
1201 基板
1202 n型窒化物半導体層
1203 窒化物半導体活性層
1204 p型窒化物半導体層
1205 n型電極
1206 p型電極
1207 アンドープGaN層
1208 p-AlGaN層
Claims (14)
- 光取り出し面を有し、前記光取り出し面から偏光光が放射される窒化物半導体発光素子と、
前記窒化物半導体発光素子における前記光取り出し面を覆っており、樹脂と、前記樹脂内に分散された非蛍光体粒子とを含む光取り出し制御層と
を備え、
前記光取り出し制御層は、前記非蛍光体粒子を0.01vol%以上10vol%以下の割合で含み、
前記非蛍光体粒子の直径は、30nm以上150nm以下である、発光デバイス。 - 前記非蛍光体粒子の屈折率が1.4以上2.9以下である、請求項1に記載の発光デバイス。
- 前記非蛍光体粒子のバンドギャップが3.0eV以上6.3eV以下である、請求項1または2に記載の発光デバイス。
- 前記窒化物半導体発光素子を主面において支持する実装基板をさらに備え、
前記窒化物半導体発光素子を前記実装基板の前記主面に正射影した図形の対角線の交点から前記光取り出し制御層の表面までの層内距離の最大値は、前記窒化物半導体発光素子を前記実装基板の前記主面に正射影した図形の辺の2点を結ぶ線分の素子内距離の最大値の1.5倍以上である、請求項1から3のいずれかに記載の発光デバイス。 - 前記素子内距離の最大値に対する前記光取り出し制御層の層内距離の最大値の比の値は、前記樹脂封止部の屈折率よりも大きい、請求項4に記載の発光デバイス。
- 前記光取り出し制御層は蛍光体物質を含む、請求項1から5のいずれかに記載の発光デバイス。
- 前記光取り出し制御層の表面を覆う第2の封止部をさらに備える、請求項1から6のいずれかに記載の発光デバイス。
- 前記窒化物半導体発光素子を主面において支持する実装基板をさらに備え、
前記窒化物半導体発光素子を前記実装基板の前記主面に正射影した図形の対角線の交点から前記第2の封止部の表面までの層内距離の最大値は、前記窒化物半導体発光素子を前記実装基板の前記主面に正射影した図形の対角線の交点から前記光取り出し制御層の表面までの層内距離の最大値の1.5倍以上である、請求項7に記載の発光デバイス。 - 前記光取り出し制御層の層内距離の最大値に対する前記第2の封止部の層内距離の最大値の比は、前記光取り出し制御層の屈折率よりも大きい、請求項8に記載の発光デバイス。
- 前記第2の封止部は、無機材料から構成されている、請求項7から9のいずれかに記載の発光デバイス。
- 前記窒化物半導体発光素子の光取り出し面を覆う第1の封止部をさらに備え、
前記光取り出し制御層は、前記第1の封止部の上から前記窒化物半導体発光素子の光取り出し面を覆っている、請求項1から10のいずれかに記載の発光デバイス。 - 前記第1の封止部は蛍光体物質を含む、請求項11に記載の発光デバイス。
- 前記第1の封止部の硬度は、前記光取り出し制御層の硬度よりも低い、請求項11または12に記載の発光デバイス。
- 前記第1の封止部の屈折率が、前記光取り出し制御層の屈折率よりも大きい、請求項11から13のいずれかに記載の発光デバイス。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010234544A JP5468517B2 (ja) | 2010-10-19 | 2010-10-19 | 半導体発光デバイス |
US13/274,759 US8455905B2 (en) | 2010-10-19 | 2011-10-17 | Semiconductor light-emitting device |
CN2011203989883U CN202405309U (zh) | 2010-10-19 | 2011-10-19 | 半导体发光器件 |
CN2011103176276A CN102456821A (zh) | 2010-10-19 | 2011-10-19 | 半导体发光器件 |
Applications Claiming Priority (1)
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JP2010234544A JP5468517B2 (ja) | 2010-10-19 | 2010-10-19 | 半導体発光デバイス |
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JP2012089652A true JP2012089652A (ja) | 2012-05-10 |
JP5468517B2 JP5468517B2 (ja) | 2014-04-09 |
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JP2010234544A Expired - Fee Related JP5468517B2 (ja) | 2010-10-19 | 2010-10-19 | 半導体発光デバイス |
Country Status (3)
Country | Link |
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US (1) | US8455905B2 (ja) |
JP (1) | JP5468517B2 (ja) |
CN (2) | CN202405309U (ja) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5374002B1 (ja) * | 2012-09-10 | 2013-12-25 | パナソニック株式会社 | 窒化物半導体発光装置 |
WO2014024371A1 (ja) * | 2012-08-10 | 2014-02-13 | パナソニック株式会社 | 半導体発光装置 |
WO2014038113A1 (ja) * | 2012-09-10 | 2014-03-13 | パナソニック株式会社 | 窒化物半導体発光装置 |
JP2016066742A (ja) * | 2014-09-25 | 2016-04-28 | 株式会社小糸製作所 | 発光装置 |
JP2016149389A (ja) * | 2015-02-10 | 2016-08-18 | 株式会社東芝 | 半導体発光装置及び蛍光体層の形成方法 |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102010028246A1 (de) * | 2010-04-27 | 2011-10-27 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement und Verfahren zum Herstellen eines optoelektronischen Bauelements |
CN103503182A (zh) * | 2012-01-23 | 2014-01-08 | 松下电器产业株式会社 | 氮化物半导体发光装置 |
DE102013207460A1 (de) * | 2013-04-24 | 2014-10-30 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement |
US9293611B1 (en) * | 2014-09-24 | 2016-03-22 | Huey-Liang Hwang | Solar cell structure and method for fabricating the same |
JP6740762B2 (ja) * | 2016-07-13 | 2020-08-19 | 日亜化学工業株式会社 | 発光装置およびその製造方法 |
JP7117170B2 (ja) * | 2018-06-20 | 2022-08-12 | スタンレー電気株式会社 | 発光装置 |
JP7244745B2 (ja) * | 2019-02-15 | 2023-03-23 | 日亜化学工業株式会社 | 発光装置、及び、光学装置 |
CN112038463A (zh) * | 2019-06-04 | 2020-12-04 | 佛山市国星光电股份有限公司 | 一种紫外led器件及其制备方法 |
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2010
- 2010-10-19 JP JP2010234544A patent/JP5468517B2/ja not_active Expired - Fee Related
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2011
- 2011-10-17 US US13/274,759 patent/US8455905B2/en not_active Expired - Fee Related
- 2011-10-19 CN CN2011203989883U patent/CN202405309U/zh not_active Expired - Fee Related
- 2011-10-19 CN CN2011103176276A patent/CN102456821A/zh not_active Withdrawn
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Also Published As
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CN102456821A (zh) | 2012-05-16 |
JP5468517B2 (ja) | 2014-04-09 |
CN202405309U (zh) | 2012-08-29 |
US20120091490A1 (en) | 2012-04-19 |
US8455905B2 (en) | 2013-06-04 |
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