JP2016066742A - 発光装置 - Google Patents
発光装置 Download PDFInfo
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- JP2016066742A JP2016066742A JP2014195595A JP2014195595A JP2016066742A JP 2016066742 A JP2016066742 A JP 2016066742A JP 2014195595 A JP2014195595 A JP 2014195595A JP 2014195595 A JP2014195595 A JP 2014195595A JP 2016066742 A JP2016066742 A JP 2016066742A
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- 239000004065 semiconductor Substances 0.000 claims abstract description 113
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- 238000000149 argon plasma sintering Methods 0.000 claims abstract description 71
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- 238000006243 chemical reaction Methods 0.000 claims description 83
- 239000000126 substance Substances 0.000 claims description 6
- 230000004907 flux Effects 0.000 abstract description 36
- 239000000463 material Substances 0.000 abstract description 36
- 230000002708 enhancing effect Effects 0.000 abstract 1
- 239000000758 substrate Substances 0.000 description 26
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 23
- 230000000052 comparative effect Effects 0.000 description 22
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- 125000000118 dimethyl group Chemical group [H]C([H])([H])* 0.000 description 13
- 230000007423 decrease Effects 0.000 description 11
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- 239000011347 resin Substances 0.000 description 9
- YIWGJFPJRAEKMK-UHFFFAOYSA-N 1-(2H-benzotriazol-5-yl)-3-methyl-8-[2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carbonyl]-1,3,8-triazaspiro[4.5]decane-2,4-dione Chemical compound CN1C(=O)N(c2ccc3n[nH]nc3c2)C2(CCN(CC2)C(=O)c2cnc(NCc3cccc(OC(F)(F)F)c3)nc2)C1=O YIWGJFPJRAEKMK-UHFFFAOYSA-N 0.000 description 6
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- 239000012780 transparent material Substances 0.000 description 2
- DEXFNLNNUZKHNO-UHFFFAOYSA-N 6-[3-[4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]piperidin-1-yl]-3-oxopropyl]-3H-1,3-benzoxazol-2-one Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C1CCN(CC1)C(CCC1=CC2=C(NC(O2)=O)C=C1)=O DEXFNLNNUZKHNO-UHFFFAOYSA-N 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
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- 229910004298 SiO 2 Inorganic materials 0.000 description 1
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- 238000007796 conventional method Methods 0.000 description 1
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- 230000000694 effects Effects 0.000 description 1
- 238000000295 emission spectrum Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 239000002609 medium Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
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- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Images
Classifications
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
- F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
- F21K9/60—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction
- F21K9/69—Details of refractors forming part of the light source
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
- F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
- F21K9/60—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction
- F21K9/65—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction specially adapted for changing the characteristics or the distribution of the light, e.g. by adjustment of parts
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V7/00—Reflectors for light sources
- F21V7/22—Reflectors for light sources characterised by materials, surface treatments or coatings, e.g. dichroic reflectors
- F21V7/24—Reflectors for light sources characterised by materials, surface treatments or coatings, e.g. dichroic reflectors characterised by the material
- F21V7/26—Reflectors for light sources characterised by materials, surface treatments or coatings, e.g. dichroic reflectors characterised by the material the material comprising photoluminescent substances
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2115/00—Light-generating elements of semiconductor light sources
- F21Y2115/10—Light-emitting diodes [LED]
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2115/00—Light-generating elements of semiconductor light sources
- F21Y2115/30—Semiconductor lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0091—Scattering means in or on the semiconductor body or semiconductor body package
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/0045—Devices characterised by their operation the devices being superluminescent diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
- H01L33/504—Elements with two or more wavelength conversion materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Led Device Packages (AREA)
Abstract
【解決手段】発光装置の光源として、ピーク波長が395〜410nmの半導体発光素子11を用い、バンドギャップが3.4eV以上の物質からなる光散乱粒子を反射部材14の分散中に分散し、光散乱粒子の屈折率を分散媒の屈折率よりも0.3以上大きくする。また、半導体発光素子11は、発光積分強度において1パーセンタイルの値が365〜383nmの範囲内とする。
【選択図】図1
Description
(第1実施形態)
[実施例]
(第2実施形態)
(第3実施形態)
(第4実施形態)
(第5実施形態)
(第6実施形態)
(第7実施形態)
10 基板
11 半導体発光素子
12 波長変換部材
13 ダム部材
14 反射部材
15 透光性部材
Claims (5)
- ピーク波長が395〜410nmの半導体発光素子と、分散媒中に光散乱粒子が分散された反射部材とを有し、
前記光散乱粒子は、バンドギャップが3.4eV以上の物質からなり、
前記分散媒の屈折率よりも前記光散乱粒子の屈折率のほうが0.3以上大きいことを特徴とする発光装置。 - 請求項1に記載の発光装置であって、
前記半導体発光素子は、発光積分強度において1パーセンタイルの値が365〜383nmであることを特徴とする発光装置。 - 請求項1又は2に記載の発光装置であって、
前記反射部材は、前記半導体発光素子の周囲を囲んで0.2〜2.0mmの幅で形成されていることを特徴とする発光装置。 - 請求項1から3のいずれか1つに記載の発光装置であって、
前記半導体発光素子からの光によって励起されて、他の波長の光を発光する波長変換部材を有し、
前記波長変換部材は、前記半導体発光素子上に50〜500nmの厚みで形成され、
前記反射部材は前記半導体発光素子及び前記波長変換部材の周囲の少なくとも一部に形成されていることを特徴とする発光装置。 - 請求項1から4のいずれか1つに記載の発光装置であって、
前記光散乱粒子は、Nb2O5及びTa2O5の少なくとも一方であることを特徴とする発光装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014195595A JP6457225B2 (ja) | 2014-09-25 | 2014-09-25 | 発光装置 |
KR1020150130828A KR20160036489A (ko) | 2014-09-25 | 2015-09-16 | 발광 장치 |
US14/855,713 US20160093779A1 (en) | 2014-09-25 | 2015-09-16 | Light emitting device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014195595A JP6457225B2 (ja) | 2014-09-25 | 2014-09-25 | 発光装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2016066742A true JP2016066742A (ja) | 2016-04-28 |
JP6457225B2 JP6457225B2 (ja) | 2019-01-23 |
Family
ID=55585371
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014195595A Expired - Fee Related JP6457225B2 (ja) | 2014-09-25 | 2014-09-25 | 発光装置 |
Country Status (3)
Country | Link |
---|---|
US (1) | US20160093779A1 (ja) |
JP (1) | JP6457225B2 (ja) |
KR (1) | KR20160036489A (ja) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2018212300A1 (ja) * | 2017-05-19 | 2018-11-22 | シチズン電子株式会社 | 発光装置 |
JP2020013944A (ja) * | 2018-07-20 | 2020-01-23 | スタンレー電気株式会社 | 発光装置 |
JP2020092251A (ja) * | 2018-11-22 | 2020-06-11 | 日亜化学工業株式会社 | 発光装置及びその製造方法 |
JP2020202399A (ja) * | 2020-09-10 | 2020-12-17 | 日亜化学工業株式会社 | 発光装置 |
US11189764B2 (en) | 2018-11-22 | 2021-11-30 | Nichia Corporation | Light-emitting device and manufacturing method thereof |
JP7505395B2 (ja) | 2020-12-21 | 2024-06-25 | 豊田合成株式会社 | 発光装置とその製造方法 |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106601898A (zh) * | 2015-10-19 | 2017-04-26 | 展晶科技(深圳)有限公司 | 发光二极管封装结构 |
GB2576578A (en) * | 2018-08-24 | 2020-02-26 | Luxvici Ltd | Lighting apparatus |
KR20220079327A (ko) * | 2020-12-04 | 2022-06-13 | 코닝 인코포레이티드 | 광추출 기판 및 이를 구비하는 유기발광장치 |
DE102022123051A1 (de) | 2022-09-09 | 2024-03-14 | Schott Ag | Beleuchtungseinrichtung und Lichtkonversionseinheit |
Citations (9)
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JP2006210887A (ja) * | 2004-12-28 | 2006-08-10 | Sharp Corp | 発光デバイスならびにそれを用いた照明機器および表示機器 |
WO2006090834A1 (ja) * | 2005-02-24 | 2006-08-31 | Kyocera Corporation | 発光装置および照明装置 |
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-
2014
- 2014-09-25 JP JP2014195595A patent/JP6457225B2/ja not_active Expired - Fee Related
-
2015
- 2015-09-16 US US14/855,713 patent/US20160093779A1/en not_active Abandoned
- 2015-09-16 KR KR1020150130828A patent/KR20160036489A/ko not_active Application Discontinuation
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WO2006090834A1 (ja) * | 2005-02-24 | 2006-08-31 | Kyocera Corporation | 発光装置および照明装置 |
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Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPWO2018212300A1 (ja) * | 2017-05-19 | 2020-03-19 | シチズン電子株式会社 | 発光装置 |
WO2018212300A1 (ja) * | 2017-05-19 | 2018-11-22 | シチズン電子株式会社 | 発光装置 |
JP7161990B2 (ja) | 2017-05-19 | 2022-10-27 | シチズン電子株式会社 | 発光装置 |
US11177423B2 (en) | 2017-05-19 | 2021-11-16 | Citizen Electronics Co., Ltd. | Light emitting device |
JP7161330B2 (ja) | 2018-07-20 | 2022-10-26 | スタンレー電気株式会社 | 発光装置 |
JP2020013944A (ja) * | 2018-07-20 | 2020-01-23 | スタンレー電気株式会社 | 発光装置 |
JP2020092251A (ja) * | 2018-11-22 | 2020-06-11 | 日亜化学工業株式会社 | 発光装置及びその製造方法 |
JP7137079B2 (ja) | 2018-11-22 | 2022-09-14 | 日亜化学工業株式会社 | 発光装置及びその製造方法 |
US11189764B2 (en) | 2018-11-22 | 2021-11-30 | Nichia Corporation | Light-emitting device and manufacturing method thereof |
US11677054B2 (en) | 2018-11-22 | 2023-06-13 | Nichia Corporation | Light-emitting device |
JP7057528B2 (ja) | 2020-09-10 | 2022-04-20 | 日亜化学工業株式会社 | 発光装置 |
JP2020202399A (ja) * | 2020-09-10 | 2020-12-17 | 日亜化学工業株式会社 | 発光装置 |
JP7505395B2 (ja) | 2020-12-21 | 2024-06-25 | 豊田合成株式会社 | 発光装置とその製造方法 |
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