JP2016127252A - ヘテロ接合型太陽電池及びその製造方法 - Google Patents
ヘテロ接合型太陽電池及びその製造方法 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 18
- 239000004065 semiconductor Substances 0.000 claims abstract description 227
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 137
- 239000000758 substrate Substances 0.000 claims abstract description 30
- 238000000034 method Methods 0.000 claims description 22
- 239000007789 gas Substances 0.000 claims description 18
- 239000001257 hydrogen Substances 0.000 claims description 12
- 229910052739 hydrogen Inorganic materials 0.000 claims description 12
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 10
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 claims description 10
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 8
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 claims description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- 229910000073 phosphorus hydride Inorganic materials 0.000 claims description 5
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 description 17
- 230000007547 defect Effects 0.000 description 13
- 238000002407 reforming Methods 0.000 description 9
- 230000000694 effects Effects 0.000 description 8
- 230000005669 field effect Effects 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 229910021419 crystalline silicon Inorganic materials 0.000 description 4
- -1 hydrogen ions Chemical class 0.000 description 4
- 230000002779 inactivation Effects 0.000 description 4
- 230000001965 increasing effect Effects 0.000 description 4
- 230000005527 interface trap Effects 0.000 description 3
- 239000004020 conductor Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000005685 electric field effect Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000009849 deactivation Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000009510 drug design Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
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Abstract
Description
対向に設置される第一表面及び第二表面を有し、且つ第一型半導体がドープされる半導体基板と、
前記第一表面に設置される第一n型緩衝層と、
前記第二表面に設置される第二n型緩衝層と、
前記第一n型緩衝層に設置され、且つ第二型半導体がドープされる第一非晶質シリコン半導体層と、
前記第二n型緩衝層に設置され、且つ前記第一型半導体がドープされる第二非晶質シリコン半導体層と、
前記第一非晶質シリコン半導体層に設置される第一透明導電層と、
前記第二非晶質シリコン半導体層に設置される第二透明導電層を備え、
ここでは、前記第一n型緩衝層は、
前記第一表面に設置されると共にそれのn型半導体のドープ濃度は1×1014〜1×1016原子/cm3の間である第一n型非晶質シリコン半導体層と、
前記第一n型非晶質シリコン半導体層に設置される第二n型非晶質シリコン半導体層を更に含み、
また、第二n型緩衝層は、
前記第二表面に設置されると共にそれのn型半導体のドープ濃度は1×1014〜1×1016原子/cm3の間である第三n型非晶質シリコン半導体層と、
前記第三n型非晶質シリコン半導体層に設置される第四n型非晶質シリコン半導体層を更に具備することを特徴とする。
以下、本発明の具体的な実施形態について添付図面に基づき説明する。なお、本発明の第1実施形態の構成を図2から図3Bに示す。図2は本発明の好ましい実施形態に係るヘテロ接合型太陽電池の構成を示す概略図である。図2に示すように、ヘテロ接合型太陽電池100は、半導体基板1、第一n型緩衝層2、第二n型緩衝層3、第一非晶質シリコン半導体層4、第二非晶質シリコン半導体層5、第一透明導電層6、第二透明導電層7、複数の第一導線8、及び複数の第二導線9を備える。
PA1 : 半導体基板
PA2 : 第一真性非晶質シリコン半導体層
PA3 : 第二真性非晶質シリコン半導体層
PA4 : 第一非晶質シリコン半導体層
PA5 : 第二非晶質シリコン半導体層
PA6 : 第一透明導電層
PA7 : 第二透明導電層
PA8 : 第一導線
PA9 : 第二導線
1 : 半導体基板
2 : 第一n型緩衝層
2a : 第一n型非晶質シリコン半導体層
2b : 第二n型非晶質シリコン半導体層
3 : 第二n型緩衝層
3a : 第三n型非晶質シリコン半導体層
3b : 第四n型非晶質シリコン半導体層
4 : 第一非晶質シリコン半導体層
5 : 第二非晶質シリコン半導体層
6 : 第一透明導電層
7 : 第二透明導電層
8 : 第一導線
9 : 第二導線
11 : 第一表面
12 : 第二表面
100 : ヘテロ接合型太陽電池
Claims (13)
- 対向に設置される第一表面及び第二表面を有し、且つ第一型半導体がドープされる半導体基板と、
前記第一表面に設置される第一n型緩衝層と、
前記第二表面に設置される第二n型緩衝層と、
前記第一n型緩衝層に設置され、且つ第二型半導体がドープされる第一非晶質シリコン半導体層と、
前記第二n型緩衝層に設置され、且つ前記第一型半導体がドープされる第二非晶質シリコン半導体層と、
前記第一非晶質シリコン半導体層に設置される第一透明導電層と、
前記第二非晶質シリコン半導体層に設置される第二透明導電層を備え、
ここでは、前記第一n型緩衝層は、
前記第一表面に設置されると共にそれのn型半導体のドープ濃度は1×1014〜1×1016原子/cm3の間である第一n型非晶質シリコン半導体層と、
前記第一n型非晶質シリコン半導体層に設置される第二n型非晶質シリコン半導体層を更に含み、
また、第二n型緩衝層は、
前記第二表面に設置されると共にそれのn型半導体のドープ濃度は1×1014〜1×1016原子/cm3の間である第三n型非晶質シリコン半導体層と、
前記第三n型非晶質シリコン半導体層に設置される第四n型非晶質シリコン半導体層を更に具備することを特徴とするヘテロ接合型太陽電池。 - 前記第一n型緩衝層の厚さは1nmから15nmであることを特徴とする、請求項1に記載のヘテロ接合型太陽電池。
- 前記第一n型非晶質シリコン半導体層の厚さは0.9nmから10nmであり、前記第二n型非晶質シリコン半導体層の厚さは少なくとも0.1nmであることを特徴とする、請求項2に記載のヘテロ接合型太陽電池。
- 前記第二n型緩衝層の厚さは1nmから15nmであることを特徴とする、請求項1に記載のヘテロ接合型太陽電池。
- 前記第三n型非晶質シリコン半導体層の厚さは0.9nmから10nmであり、前記第四n型非晶質シリコン半導体層の厚さは少なくとも0.1nmであることを特徴とする、請求項4に記載のヘテロ接合型太陽電池。
- 前記第一型半導体及び前記第二型半導体の内の何れか1つはn型半導体であり、もう一方はp型半導体であることを特徴とする、請求項1に記載のヘテロ接合型太陽電池。
- 第一型半導体がドープされる半導体基板を提供する工程(a)と、
前記半導体基板の第一表面上に第一n型緩衝層が形成される工程(b)と、
前記半導体基板の第二表面上に第二n型緩衝層が形成される工程(c)と、
前記第一n型緩衝層に第二型半導体がドープされる第一非晶質シリコン半導体層が形成される工程(d)と、
前記第二n型緩衝層上に前記第一型半導体がドープされる第二非晶質シリコン半導体層が形成される工程(e)と、
前記第一非晶質シリコン半導体層に第一透明導電層が形成される工程(f)と、
前記第二非晶質シリコン半導体層に第二透明導電層が形成される工程(g)を含むことを特徴とするヘテロ接合型太陽電池の製造方法。 - 工程(b)は、
前記半導体基板の前記第一表面上には前記第一n型緩衝層の第一n型非晶質シリコン半導体層が形成される工程(b1)と、
前記第一n型非晶質シリコン半導体層に前記第一n型緩衝層の第二n型非晶質シリコン半導体層が形成される工程(b2)をさらに含むことを特徴とする、請求項7に記載のヘテロ接合型太陽電池の製造方法。 - 前記工程(b1)の後には、ドープガスにより、前記第一n型非晶質シリコン半導体層の処理が施される工程(b11)を更に含むことを特徴とする、請求項8に記載のヘテロ接合型太陽電池の製造方法。
- 前記ドープガスはホスフィンガス、アルシンガス、窒素、及び水素の内の少なくとも1つを含むことを特徴とする、請求項9に記載のヘテロ接合型太陽電池の製造方法。
- 工程(c)は、
前記半導体基板の前記第二表面上に前記第二n型緩衝層の第三n型非晶質シリコン半導体層が形成される工程(c1)と、
前記第二n型非晶質シリコン半導体層上に前記第二n型緩衝層の第四n型非晶質シリコン半導体層が形成される工程(c2)を含むことを特徴とする、請求項7に記載のヘテロ接合型太陽電池の製造方法。 - 前記工程(c1)の後には、ドープガスにより前記第三n型非晶質シリコン半導体層の処理が施される工程(c11)を更に含むことを特徴とする、請求項11に記載のヘテロ接合型太陽電池の製造方法。
- 前記ドープガスはホスフィンガス、アルシンガス、窒素、及び水素の内の少なくとも1つを含むことを特徴とする、請求項12に記載のヘテロ接合型太陽電池の製造方法。
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CN115132884A (zh) * | 2022-09-01 | 2022-09-30 | 福建金石能源有限公司 | 一种异质结太阳能电池的制作方法 |
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CN112531052B (zh) * | 2020-12-28 | 2022-03-22 | 苏州腾晖光伏技术有限公司 | 异质结电池结构及其制备方法 |
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