JP2016090510A - ガスセンサ及びその製造方法 - Google Patents
ガスセンサ及びその製造方法 Download PDFInfo
- Publication number
- JP2016090510A JP2016090510A JP2014228220A JP2014228220A JP2016090510A JP 2016090510 A JP2016090510 A JP 2016090510A JP 2014228220 A JP2014228220 A JP 2014228220A JP 2014228220 A JP2014228220 A JP 2014228220A JP 2016090510 A JP2016090510 A JP 2016090510A
- Authority
- JP
- Japan
- Prior art keywords
- film
- gnr
- gas sensor
- substrate
- graphene
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title abstract description 16
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 64
- 229910021389 graphene Inorganic materials 0.000 claims abstract description 62
- 239000000758 substrate Substances 0.000 claims abstract description 61
- 239000002074 nanoribbon Substances 0.000 claims abstract description 13
- 229910052801 chlorine Inorganic materials 0.000 claims abstract description 7
- 229910052751 metal Inorganic materials 0.000 claims description 49
- 239000002184 metal Substances 0.000 claims description 49
- 229910052697 platinum Inorganic materials 0.000 claims description 6
- 229910052737 gold Inorganic materials 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 229910052763 palladium Inorganic materials 0.000 claims description 4
- 239000012528 membrane Substances 0.000 abstract description 4
- 239000000126 substance Substances 0.000 abstract description 4
- 239000007789 gas Substances 0.000 description 109
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Chemical compound C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 description 41
- 238000000034 method Methods 0.000 description 24
- 239000002243 precursor Substances 0.000 description 20
- 239000004065 semiconductor Substances 0.000 description 20
- 238000001514 detection method Methods 0.000 description 19
- 238000000151 deposition Methods 0.000 description 15
- 239000010410 layer Substances 0.000 description 14
- 238000010586 diagram Methods 0.000 description 13
- 230000008021 deposition Effects 0.000 description 12
- 230000008859 change Effects 0.000 description 11
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 9
- 239000000460 chlorine Substances 0.000 description 8
- 239000010936 titanium Substances 0.000 description 8
- 239000010445 mica Substances 0.000 description 7
- 229910052618 mica group Inorganic materials 0.000 description 7
- 230000035945 sensitivity Effects 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- 238000000137 annealing Methods 0.000 description 5
- 239000002041 carbon nanotube Substances 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
- 230000004048 modification Effects 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- 238000007740 vapor deposition Methods 0.000 description 5
- KDEZIUOWTXJEJK-UHFFFAOYSA-N heptacene Chemical compound C1=CC=CC2=CC3=CC4=CC5=CC6=CC7=CC=CC=C7C=C6C=C5C=C4C=C3C=C21 KDEZIUOWTXJEJK-UHFFFAOYSA-N 0.000 description 4
- UIFXPOUSHBMMEG-UHFFFAOYSA-N nonacene Chemical compound C1=CC=CC2=CC3=CC4=CC5=CC6=CC7=CC8=CC9=CC=CC=C9C=C8C=C7C=C6C=C5C=C4C=C3C=C21 UIFXPOUSHBMMEG-UHFFFAOYSA-N 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 238000003786 synthesis reaction Methods 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- 208000005718 Stomach Neoplasms Diseases 0.000 description 3
- 125000004432 carbon atom Chemical group C* 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 206010017758 gastric cancer Diseases 0.000 description 3
- SLIUAWYAILUBJU-UHFFFAOYSA-N pentacene Chemical compound C1=CC=CC2=CC3=CC4=CC5=CC=CC=C5C=C4C=C3C=C21 SLIUAWYAILUBJU-UHFFFAOYSA-N 0.000 description 3
- 241000894007 species Species 0.000 description 3
- 201000011549 stomach cancer Diseases 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 239000012472 biological sample Substances 0.000 description 2
- 229910021393 carbon nanotube Inorganic materials 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 150000001923 cyclic compounds Chemical class 0.000 description 2
- 239000000539 dimer Substances 0.000 description 2
- 239000003814 drug Substances 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000036541 health Effects 0.000 description 2
- 230000003862 health status Effects 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 230000003449 preventive effect Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000007363 ring formation reaction Methods 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- 210000002784 stomach Anatomy 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 206010019375 Helicobacter infections Diseases 0.000 description 1
- 229910004129 HfSiO Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- -1 Si 3 N 4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 229910002367 SrTiO Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 125000005577 anthracene group Chemical group 0.000 description 1
- 150000001454 anthracenes Chemical class 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000008280 blood Substances 0.000 description 1
- 210000004369 blood Anatomy 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 208000010643 digestive system disease Diseases 0.000 description 1
- 201000010099 disease Diseases 0.000 description 1
- 208000037265 diseases, disorders, signs and symptoms Diseases 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000000609 electron-beam lithography Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 208000015181 infectious disease Diseases 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 230000000379 polymerizing effect Effects 0.000 description 1
- 238000010526 radical polymerization reaction Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 210000003296 saliva Anatomy 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000000352 supercritical drying Methods 0.000 description 1
- 210000004243 sweat Anatomy 0.000 description 1
- 238000001308 synthesis method Methods 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- 210000002700 urine Anatomy 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Landscapes
- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
Abstract
Description
以下、実施形態について説明する。
まず、図1(a)のように、絶縁基板11の上に、原子レベルで平坦な金属膜12を形成する。
以下、上述の方法により形成されたGNRネットワーク膜を有するガスセンサ(NH3ガスセンサ)の製造方法について説明する。
前記基板の上方に配置されたグラフェン膜と、
前記グラフェン膜に接触する第1の電極及び第2の電極とを有し、
前記グラフェン膜が、複数のアームチェア型グラフェンナノリボンが互いに接したネットワーク構造を有することを特徴とするガスセンサ。
前記下部電極を覆う絶縁膜とを有し、
前記グラフェン膜は前記絶縁膜上に配置され、
前記第1の電極及び前記第2の電極は前記グラフェン膜上にスリットを挟んで配置されていることを特徴とする付記1又は2に記載のガスセンサ。
前記金属膜上に、複数のアームチェア型グラフェンナノリボンが互いに接したネットワーク構造を有するグラフェン膜を形成する工程と、
前記第1の基板から前記金属膜と前記グラフェン膜との積層体を剥離する工程と、
前記金属膜と前記グラフェン膜との積層体を第2の基板上に転写する工程と
を有することを特徴とするガスセンサの製造方法。
前記金属膜にスリットを形成して、前記金属膜を、前記スリットを挟んで配置された第1の電極と第2の電極とに分離する工程を有する
ことを特徴とする付記9に記載のガスセンサの製造方法。
Claims (6)
- 基板と、
前記基板の上方に配置されたグラフェン膜と、
前記グラフェン膜に接触する第1の電極及び第2の電極とを有し、
前記グラフェン膜が、複数のアームチェア型グラフェンナノリボンが互いに接したネットワーク構造を有することを特徴とするガスセンサ。 - 前記グラフェンナノリボンのエッジが、Cl、F、OH、NH2、及びCH3のうちのいずれか一種により修飾されていることを特徴とする請求項1に記載のガスセンサ。
- 前記基板の上方に配置された下部電極と、
前記下部電極を覆う絶縁膜とを有し、
前記グラフェン膜は前記絶縁膜上に配置され、
前記第1の電極及び前記第2の電極は前記グラフェン膜上にスリットを挟んで配置されていることを特徴とする請求項1又は2に記載のガスセンサ。 - 前記グラフェン膜を加熱するヒーターを有することを特徴とする請求項3に記載のガスセンサ。
- 前記第1の電極及び第2の電極が、Ag、Al、Pd、Ni、Cu、Au及びPtのうちのいずれか1種により形成されていることを特徴とする請求項3に記載のガスセンサ。
- 第1の基板上に金属膜を形成する工程と、
前記金属膜上に、複数のアームチェア型グラフェンナノリボンが互いに接したネットワーク構造を有するグラフェン膜を形成する工程と、
前記第1の基板から前記金属膜と前記グラフェン膜との積層体を剥離する工程と、
前記金属膜と前記グラフェン膜との積層体を第2の基板上に転写する工程と
を有することを特徴とするガスセンサの製造方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014228220A JP6394301B2 (ja) | 2014-11-10 | 2014-11-10 | ガスセンサ及びその製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014228220A JP6394301B2 (ja) | 2014-11-10 | 2014-11-10 | ガスセンサ及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2016090510A true JP2016090510A (ja) | 2016-05-23 |
JP6394301B2 JP6394301B2 (ja) | 2018-09-26 |
Family
ID=56018448
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014228220A Expired - Fee Related JP6394301B2 (ja) | 2014-11-10 | 2014-11-10 | ガスセンサ及びその製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP6394301B2 (ja) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106525917A (zh) * | 2016-11-24 | 2017-03-22 | 北京无线电计量测试研究所 | 一种碳纳米管CuCl复合膜制剂、一氧化碳传感器和制作方法 |
JP2017227561A (ja) * | 2016-06-23 | 2017-12-28 | 富士通株式会社 | ガスセンサ及びその使用方法 |
JP2018155579A (ja) * | 2017-03-17 | 2018-10-04 | Tdk株式会社 | 弾性波センサ |
US10636539B2 (en) | 2017-06-16 | 2020-04-28 | Fujitsu Limited | Compound, compound fabrication method, and graphene nanoribbon fabrication method |
EP3702326A1 (en) | 2019-02-28 | 2020-09-02 | Fujitsu Limited | Compound, nanoribbon, and semiconductor device |
CN112485296A (zh) * | 2019-09-11 | 2021-03-12 | 中国科学院金属研究所 | 基于单壁碳纳米管的自供能气体传感器的制备方法 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109682866B (zh) * | 2019-01-07 | 2020-08-04 | 华中科技大学 | 基于磷钼酸分子修饰的碳纳米管气敏传感器 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006112819A (ja) * | 2004-10-12 | 2006-04-27 | Fujitsu Ltd | 気体検知装置 |
US20060249402A1 (en) * | 2005-03-15 | 2006-11-09 | Snow Eric S | Capacitive based sensing of molecular adsorbates on the surface of single wall nanotubes |
US20080030352A1 (en) * | 2006-02-27 | 2008-02-07 | Thorn Security Limited | Methods and systems for gas detection |
WO2008023669A1 (fr) * | 2006-08-21 | 2008-02-28 | Fujitsu Limited | Nanomatériau carboné semi-conducteur du type n, son procédé de production et procédé de fabrication d'un dispositif semi-conducteur |
JP2008216083A (ja) * | 2007-03-05 | 2008-09-18 | Sharp Corp | 化学物質センシング素子、化学物質センシング装置、及び化学物質センシング素子の製造方法 |
JP2011061046A (ja) * | 2009-09-10 | 2011-03-24 | Sony Corp | 3端子型電子デバイス及び2端子型電子デバイス |
JP2011169634A (ja) * | 2010-02-16 | 2011-09-01 | Fuji Electric Co Ltd | 薄膜ガスセンサ |
JP2012121751A (ja) * | 2010-12-07 | 2012-06-28 | Kanazawa Univ | グラフェン・ダイヤモンド積層体 |
-
2014
- 2014-11-10 JP JP2014228220A patent/JP6394301B2/ja not_active Expired - Fee Related
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006112819A (ja) * | 2004-10-12 | 2006-04-27 | Fujitsu Ltd | 気体検知装置 |
US20060249402A1 (en) * | 2005-03-15 | 2006-11-09 | Snow Eric S | Capacitive based sensing of molecular adsorbates on the surface of single wall nanotubes |
US20080030352A1 (en) * | 2006-02-27 | 2008-02-07 | Thorn Security Limited | Methods and systems for gas detection |
WO2008023669A1 (fr) * | 2006-08-21 | 2008-02-28 | Fujitsu Limited | Nanomatériau carboné semi-conducteur du type n, son procédé de production et procédé de fabrication d'un dispositif semi-conducteur |
JP2008216083A (ja) * | 2007-03-05 | 2008-09-18 | Sharp Corp | 化学物質センシング素子、化学物質センシング装置、及び化学物質センシング素子の製造方法 |
JP2011061046A (ja) * | 2009-09-10 | 2011-03-24 | Sony Corp | 3端子型電子デバイス及び2端子型電子デバイス |
JP2011169634A (ja) * | 2010-02-16 | 2011-09-01 | Fuji Electric Co Ltd | 薄膜ガスセンサ |
JP2012121751A (ja) * | 2010-12-07 | 2012-06-28 | Kanazawa Univ | グラフェン・ダイヤモンド積層体 |
Non-Patent Citations (2)
Title |
---|
BING HUANG ET AL.: "Adsorption of Gas Molecules on Graphene Nanoribbons and Its Implication for Nanoscale Molecule Senso", J.PHYS.CHEM. C, vol. 112, JPN6018019279, 2008, pages 13442 - 13446, ISSN: 0003808331 * |
HIDEYUKI JIPPO ET AL.: "First-principles study of edge-modified armchair graphene nanoribbons", 第44回フラーレン・ナノチューブ・グラフェン総合シンポジウム 講演要旨集, JPN6018019282, 2013, pages 135 - 2, ISSN: 0003808330 * |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2017227561A (ja) * | 2016-06-23 | 2017-12-28 | 富士通株式会社 | ガスセンサ及びその使用方法 |
CN106525917A (zh) * | 2016-11-24 | 2017-03-22 | 北京无线电计量测试研究所 | 一种碳纳米管CuCl复合膜制剂、一氧化碳传感器和制作方法 |
JP2018155579A (ja) * | 2017-03-17 | 2018-10-04 | Tdk株式会社 | 弾性波センサ |
US10636539B2 (en) | 2017-06-16 | 2020-04-28 | Fujitsu Limited | Compound, compound fabrication method, and graphene nanoribbon fabrication method |
EP3702326A1 (en) | 2019-02-28 | 2020-09-02 | Fujitsu Limited | Compound, nanoribbon, and semiconductor device |
US11401291B2 (en) | 2019-02-28 | 2022-08-02 | Fujitsu Limited | Compound, nanoribbon, and semiconductor device |
US11702438B2 (en) | 2019-02-28 | 2023-07-18 | Fujitsu Limited | Compound, nanoribbon, and semiconductor device |
CN112485296A (zh) * | 2019-09-11 | 2021-03-12 | 中国科学院金属研究所 | 基于单壁碳纳米管的自供能气体传感器的制备方法 |
CN112485296B (zh) * | 2019-09-11 | 2022-04-05 | 中国科学院金属研究所 | 基于单壁碳纳米管的自供能气体传感器的制备方法 |
Also Published As
Publication number | Publication date |
---|---|
JP6394301B2 (ja) | 2018-09-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6394301B2 (ja) | ガスセンサ及びその製造方法 | |
Zheng et al. | MoS2 Van der Waals p–n junctions enabling highly selective room‐temperature NO2 sensor | |
Lu et al. | Reduced graphene oxide for room-temperature gas sensors | |
Choi et al. | Dual functional sensing mechanism in SnO2–ZnO core–shell nanowires | |
Gong et al. | Rapid selective etching of PMMA residues from transferred graphene by carbon dioxide | |
US9537157B2 (en) | Nanodevices for generating power from molecules and batteryless sensing | |
Kwon et al. | Reversible and irreversible responses of defect-engineered graphene-based electrolyte-gated pH sensors | |
Kiriakidis et al. | Ultra-low gas sensing utilizing metal oxide thin films | |
KR20150117945A (ko) | 환원 그래핀 산화물 기반 바이오 센서 및 이를 이용한 바이오 물질 검출 방법 | |
KR20150142269A (ko) | 그래핀 나노리본의 제조방법 및 이에 의해 제조된 나노리본을 포함하는 센서 | |
JP2010019688A (ja) | 化学物質センシング素子、化学物質センシング装置、及び、化学物質センシング素子の製造方法 | |
JP2016047777A (ja) | グラフェン薄膜の製造方法、並びにグラフェン薄膜を備えた電子素子およびセンサ | |
Mackenzie et al. | Batch fabrication of nanopatterned graphene devices via nanoimprint lithography | |
JP2014218386A (ja) | グラフェン膜、電子装置、及び電子装置の製造方法 | |
Karaagac et al. | Enhanced field ionization enabled by metal induced surface states on semiconductor nanotips | |
Li et al. | Humidity sensing properties of morphology-controlled ordered silicon nanopillar | |
JP2015101499A (ja) | グラフェン膜、電子装置、及び電子装置の製造方法 | |
JP2016151456A (ja) | ガスセンサ及びその製造方法 | |
KR100895258B1 (ko) | 탄소나노튜브를 이용한 가스센서 및 그 작동방법 | |
Kaur et al. | Selective H2S detection by CuO functionalized ZnO nanotetrapods at room temperature | |
KR101889175B1 (ko) | Au, Pt 및 Pd 금속입자로 기능화된 ZnO 나노선의 상온 감응 특성을 이용한 가스센서 및 그 제조 방법 | |
Noh et al. | Improving graphene gas sensors via a synergistic effect of top nanocatalysts and bottom cellulose assembled using a modified filtration technique | |
Lee et al. | Role of graphene quantum dots with discrete band gaps on SnO 2 nanodomes for NO 2 gas sensors with an ultralow detection limit | |
Zhong et al. | Temperature dependent carrier mobility in graphene: effect of Pd nanoparticle functionalization and hydrogenation | |
KR20150097145A (ko) | 유연소재 히터를 포함하는 그래핀 가스센서 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20170704 |
|
RD03 | Notification of appointment of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7423 Effective date: 20180215 |
|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20180220 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20180523 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20180605 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20180711 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20180731 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20180813 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6394301 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
LAPS | Cancellation because of no payment of annual fees |