CN112485296B - 基于单壁碳纳米管的自供能气体传感器的制备方法 - Google Patents
基于单壁碳纳米管的自供能气体传感器的制备方法 Download PDFInfo
- Publication number
- CN112485296B CN112485296B CN201910857326.9A CN201910857326A CN112485296B CN 112485296 B CN112485296 B CN 112485296B CN 201910857326 A CN201910857326 A CN 201910857326A CN 112485296 B CN112485296 B CN 112485296B
- Authority
- CN
- China
- Prior art keywords
- self
- gas sensor
- carbon nanotube
- walled carbon
- powered
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000002109 single walled nanotube Substances 0.000 title claims abstract description 53
- 238000002360 preparation method Methods 0.000 title claims abstract description 17
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 32
- 239000002041 carbon nanotube Substances 0.000 claims abstract description 27
- 229910021393 carbon nanotube Inorganic materials 0.000 claims abstract description 27
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 24
- 239000010703 silicon Substances 0.000 claims abstract description 23
- 238000000034 method Methods 0.000 claims abstract description 15
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910052709 silver Inorganic materials 0.000 claims abstract description 11
- 239000004332 silver Substances 0.000 claims abstract description 11
- 239000007772 electrode material Substances 0.000 claims abstract description 9
- 229910052751 metal Inorganic materials 0.000 claims abstract description 7
- 239000002184 metal Substances 0.000 claims abstract description 7
- 229910052755 nonmetal Inorganic materials 0.000 claims abstract description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 5
- 239000003054 catalyst Substances 0.000 claims abstract description 5
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 5
- 229910052802 copper Inorganic materials 0.000 claims abstract description 5
- 239000010949 copper Substances 0.000 claims abstract description 5
- 238000009713 electroplating Methods 0.000 claims abstract description 5
- 238000007667 floating Methods 0.000 claims abstract description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910052737 gold Inorganic materials 0.000 claims abstract description 5
- 239000010931 gold Substances 0.000 claims abstract description 5
- 229910021389 graphene Inorganic materials 0.000 claims abstract description 5
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 5
- 238000002207 thermal evaporation Methods 0.000 claims abstract description 5
- 239000000758 substrate Substances 0.000 claims description 29
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 24
- 238000005286 illumination Methods 0.000 claims description 17
- 230000004044 response Effects 0.000 claims description 12
- 239000002238 carbon nanotube film Substances 0.000 claims description 9
- 239000012528 membrane Substances 0.000 claims description 8
- -1 polyethylene terephthalate Polymers 0.000 claims description 8
- 239000004205 dimethyl polysiloxane Substances 0.000 claims description 5
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 claims description 5
- 229920000139 polyethylene terephthalate Polymers 0.000 claims description 5
- 239000005020 polyethylene terephthalate Substances 0.000 claims description 5
- 239000004642 Polyimide Substances 0.000 claims description 4
- 238000005520 cutting process Methods 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 4
- 239000011112 polyethylene naphthalate Substances 0.000 claims description 4
- 229920001721 polyimide Polymers 0.000 claims description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 3
- 239000002131 composite material Substances 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 3
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 claims description 3
- 239000010408 film Substances 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 claims description 2
- 238000005516 engineering process Methods 0.000 abstract description 9
- 238000005265 energy consumption Methods 0.000 abstract description 5
- 238000013461 design Methods 0.000 abstract description 4
- 239000011159 matrix material Substances 0.000 abstract description 3
- 150000002739 metals Chemical class 0.000 abstract description 3
- 150000002843 nonmetals Chemical class 0.000 abstract description 3
- 229910044991 metal oxide Inorganic materials 0.000 abstract description 2
- 150000004706 metal oxides Chemical class 0.000 abstract description 2
- 239000007789 gas Substances 0.000 description 74
- 238000012360 testing method Methods 0.000 description 11
- 230000009286 beneficial effect Effects 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- JCXJVPUVTGWSNB-UHFFFAOYSA-N nitrogen dioxide Inorganic materials O=[N]=O JCXJVPUVTGWSNB-UHFFFAOYSA-N 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000000084 colloidal system Substances 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000011056 performance test Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000011084 recovery Methods 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- MGWGWNFMUOTEHG-UHFFFAOYSA-N 4-(3,5-dimethylphenyl)-1,3-thiazol-2-amine Chemical compound CC1=CC(C)=CC(C=2N=C(N)SC=2)=C1 MGWGWNFMUOTEHG-UHFFFAOYSA-N 0.000 description 1
- 229910000807 Ga alloy Inorganic materials 0.000 description 1
- 241000790101 Myriopus Species 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 239000002360 explosive Substances 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 239000005543 nano-size silicon particle Substances 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000004304 visual acuity Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic System
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
- H01L31/074—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a heterojunction with an element of Group IV of the Periodic System, e.g. ITO/Si, GaAs/Si or CdTe/Si solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Abstract
本发明涉及气体传感器技术,具体为一种基于单壁碳纳米管的自供能气体传感器的制备方法。利用浮动催化剂化学气相沉积法制备并收集高质量单壁碳纳米管薄膜,直接转移担载于柔性透明基体上,以单壁碳纳米管作为气体敏感元件,以单壁碳纳米管薄膜/硅异质结制备太阳能光伏电池,再将电极材料,如:铜、金、银、铝等金属或碳纳米管、石墨烯、ITO等非金属,以磁控溅射、热蒸发、电镀、银胶等方式连接,即完成基于单壁碳纳米管的自供能气体传感器的组装。本发明实现了小而轻、高性能自供能气体传感器的制备,并可进一步通过优化设计集成柔性可弯折的自供能气体传感器,突破了目前金属氧化物气体传感器在柔性、重量、能耗、供能等方面的局限性。
Description
技术领域
本发明涉及气体传感器技术,具体为一种利用单壁碳纳米管柔性透明薄膜构建高性能气体传感器、及单壁碳纳米管薄膜/硅异质结太阳能光伏电池构建(含柔性)自供能气体传感器的制备方法。
背景技术
近年来,随着科技的迅速发展,传感器技术无论在精度和广度上已取得快速进步。然而,传统的传感器仍难以满足IoT(Internet of Things)物联网技术提出的巨大需求,新型传感器技术亟待取得突破。自供能传感器就是一种新兴的传感技术。
按供能方式可以将微型传感器分为两种:有源和无源传感器。尽管有源传感器由电源或者电路供电,控制处理灵活方便,已广泛应用当今社会;但对于需长期监测、不能提供电源或电池难以更换、易燃易爆、深空探测等危险环境中的应用,则需要采用无源传感器。此外,由于物联网技术万物互联,节点数量极多,分布范围极广,电池的更换也难以实现。因此,传感器若能自供能,则具有巨大的应用前景,目前也是国内外研究的热点之一。
单壁碳纳米管具有优异的力学、光学性能、弹道输运特性、很好柔韧性及较低的密度,对外界环境变化敏感等,是一种理想的柔性气体敏感材料(文献1.Meyyappan,M.Small,2016,12(16):2118-2129.文献2.Schroeder V,Savagatrup S,He M,et al.Chemicalreviews,2018,119(1):599-663.)。为此,人们开发了多种碳纳米管气体传感器。相比于传统气体传感器,碳纳米管气体传感器具有轻质、小型、柔性、低能耗等特点;单壁碳纳米管(含柔性)气体传感器所需的工作电压很低,低至可在0.1V正常工作。(文献3.Feng X,IrleS,Witek H,et al.Journal of the American Chemical Society,2005,127(30):10533-10538.文献4.Ammu S,Dua V,Agnihotra S R,et al.Journal of the American ChemicalSociety,2012,134(10):4553-4556.文献5.Xiao M,Liang S,Han J,et al.ACS sensors,2018,3(4):749-756.)。此外,随着碳纳米管薄膜光电性能的提升和器件结构的改进,碳纳米管/硅异质结太阳能电池的转换效率已达10%~17%。(文献6.Hu X G,Hou P X,Liu C,et al.Nano energy,2018,50:521-527.文献7.Cui K,Qian Y,Jeon I,et al.AdvancedEnergy Materials,2017,7(18):1700449.文献8.Wang F,Kozawa D,Miyauchi Y,etal.Nature communications,2015,6:6305.)。这种转化效率的碳纳米管/硅异质结太阳能电池能够提供0.5~0.6V的电压;因此,碳纳米管/硅异质结太阳能电池完全能够提供碳纳米管柔性气体传感器稳定工作所需的电压。然而,目前尚无将此两种技术结合的报道。
发明内容
本发明的目的在于提供一种基于单壁碳纳米管的自供能气体传感器的制备方法,在单壁碳纳米管薄膜气体传感器的小型化、稳定持久、便携式、低功耗、室温下使用、高灵敏度等特性的基础上,首次实现了自供能模式。在光照条件下,自供能模块可实现稳定的电源供给,无需外加电源即可使用,有利于其在深空探测等极端环境下的应用,可节约人力成本,也能降低能源的消耗,有利于节能减排。
本发明的技术方案是:
一种基于单壁碳纳米管的自供能气体传感器的制备方法,利用单壁碳纳米管薄膜作为气体敏感材料与基体构建气体传感单元,同时利用单壁碳纳米管薄膜与硅构建的异质结太阳能光伏电池自供能单元作为供电系统,利用电极材料将两部分连接,即获得供电、传感一体化的气体传感器。
所述的基于单壁碳纳米管的自供能气体传感器的制备方法,单壁碳纳米管薄膜为采用浮动催化剂化学气相沉积法制备的直接收集在滤膜上的薄膜宏观体,再经压印转移至基体上,形成单壁碳纳米管/基体复合膜,即构建出基于单壁碳纳米管的气体传感单元。
所述的基于单壁碳纳米管的自供能气体传感器的制备方法,基体为刚性基体或者柔性、透明基体,刚性基体包括但不限于硅片、玻璃片或电路板,柔性、透明基体包括但不限于聚对苯二甲酸乙二酯薄膜、聚萘二甲酸乙二醇酯、聚二甲基硅氧烷或聚酰亚胺。
所述的基于单壁碳纳米管的自供能气体传感器的制备方法,单壁碳纳米管薄膜/硅异质结太阳能光伏电池的制备方法如下:首先将沉积于滤膜上的碳纳米管透明导电薄膜裁剪成需要的尺寸;再将其直接转移至硅基体上,滴加无水乙醇,使碳纳米管透明导电薄膜与硅基体紧密接触;然后制备上电极和下电极,即得太阳能光伏电池自供能单元,在光照条件下稳定提供输出电压。
所述的基于单壁碳纳米管的自供能气体传感器的制备方法,将气体传感单元裁减成需要的尺寸,利用电极材料将气体传感单元与太阳能光伏电池自供能单元,以磁控溅射、热蒸发、电镀或银胶方式连接,即完成基于单壁碳纳米管的自供能气体传感器的组装。
所述的基于单壁碳纳米管的自供能气体传感器的制备方法,电极材料为金属或非金属,金属包括但不限于铜、金、银或铝,非金属包括但不限于碳纳米管、石墨烯或ITO。
所述的基于单壁碳纳米管的自供能气体传感器的制备方法,在光照条件下,该自供能气体传感器集成的基于碳纳米管薄膜的太阳能光伏电池模块输出供气体传感器工作的稳定电压,无需其他外接电源可使传感器正常工作。
所述的基于单壁碳纳米管的自供能气体传感器的制备方法,该自供能气体传感器检测ppm甚至ppb量级的气体,响应时间在10秒以内。
所述的基于单壁碳纳米管的自供能气体传感器的制备方法,该自供能气体传感器进行大角度0~180°、无限次弯折时,不影响传感器性能。
本发明的设计思想是:
利用单壁碳纳米管薄膜/硅异质结(含柔性)太阳能光伏电池作为自供能组件,与基于单壁碳纳米管的柔性传感器组件集成为自供能气体传感器;在光照条件下,太阳能光伏电池为传感器提供稳定的电源,驱动传感器正常工作。
本发明的优点及有益效果是:
1.在光照条件下,基于碳纳米管的自供能气体传感器无需外电源;单壁碳纳米管薄膜/硅异质结太阳能光伏电池直接将光能转化为电能,驱动传感器工作,效果不弱于甚至优于外接电源供电。
2.本发明方法适用于不同材质的基体,如:硅片、石英玻璃等刚性基体,亦适用于PET、PEN、PDMS等柔性基体,使集成系统升级为柔性器件,有应用于可穿戴器件领域的潜力。
3.本发明集成的基于单壁碳纳米管薄膜/硅异质结的太阳能光伏电池能够提供0.5~0.6V的稳定电压,可稳定驱动气体传感部件正常工作。
4.本发明方法简便、洁净、器件集成过程简单,易于量产。
5.本发明传感器还具有结构简单、功耗极低(μW级别)、可批量生产、成本低等众多优点,且便于组合为阵列结构,更好的提高其对多种气体的分辨能力。
6.本发明传感器在光照条件下,集成的基于碳纳米管薄膜的太阳能光伏电池模块输出供气体传感器工作的稳定电压,无需其他外接电源即可使传感器正常工作。
附图说明
图1.自供能气体传感器的结构示意图。
图2.单壁碳纳米管自供能气体传感器的光学照片。
图3.在光照等条件下,单壁碳纳米管自供能气体传感器对NO2气体的响应性能测试曲线。图中,横坐标time代表时间(s),纵坐标current代表电流(A)。
图4.无光照等条件下,利用外加电源,传感器对NO2气体的响应性能测试曲线。图中,横坐标time代表时间(s),纵坐标current代表电流(A)。
具体实施方式
在具体实施过程中,本发明利用浮动催化剂化学气相沉积法制备并收集高质量单壁碳纳米管薄膜,直接转移担载于柔性透明基体上,以单壁碳纳米管(CNT)作为气体敏感元件,以单壁碳纳米管薄膜/硅异质结制备太阳能光伏电池,再将电极材料,如:铜、金、银、铝等金属或碳纳米管、石墨烯、氧化铟锡(ITO)等非金属,以磁控溅射、热蒸发、电镀、银胶等方式连接,即完成基于单壁碳纳米管的自供能气体传感器的组装。
如图1所示,自供能气体传感器的结构示意图,它包括气体传感单元(传感器模块)、太阳能光伏电池自供能单元(自供能模块)以及两单元的连接部分,下面分别详细阐述。
基于碳纳米管的气体传感单元的构建:将浮动催化剂化学气相沉积法制备得到的沉积在微孔滤膜(本发明中,微孔滤膜可以为普通水系/有机混合纤维微孔滤膜其技术指标如下:直径30mm~70mm,平均孔径0.45μm)上的碳纳米管薄膜,通过压印转移方法转移到基体上,基体可以是硅片、玻璃片、电路板等刚性基体或者柔性、透明基体(包括但不限于聚对苯二甲酸乙二酯薄膜(PET)、聚萘二甲酸乙二醇酯(PEN)、聚二甲基硅氧烷(PDMS)、聚酰亚胺(PI)等),碳纳米管薄膜的厚度可根据透光率确定,透光率为60~98%,基体厚度为200μm~1000μm。从而,形成碳纳米管/基体复合膜,即构建出基于碳纳米管的气体传感单元(含柔性)。本发明中,“含柔性”是指基于结合柔性自供能单元和柔性气体传感器单元升级成为柔性自供能气体传感器。
基于碳纳米管的太阳能光伏电池自供能单元的构建:首先将沉积于微孔滤膜上的高质量(如:高透明导电性、G/D比大于100)碳纳米管透明导电薄膜裁剪成合适尺寸;再将碳纳米管透明导电薄膜转移至硅基体(含柔性)上,滴加无水乙醇,使碳纳米管薄膜与硅基体紧密接触;然后,制备上电极(如:银胶)和下电极(如:铟镓合金),即得单壁碳纳米管薄膜/硅异质结太阳能光伏电池自供能单元,在光照等条件下可稳定提供输出电压。
基于碳纳米管的(含柔性)自供能气体传感器的构建:如图2所示,将上述两个基本单元:气体传感单元、太阳能光伏电池自供能单元,利用电极材料,如:铜、金、银、铝等金属或碳纳米管、石墨烯、ITO等非金属,以磁控溅射、热蒸发、电镀、银胶等方式连接为一个基本的(含柔性)自供能的气体传感器单元,而且可集成两个以上气体传感器单元并构成传感器阵列。
本发明通过优化器件结构,利用柔性薄膜硅和其他柔性透明基底,可分别构建基于单壁碳纳米管薄膜/硅异质结的柔性太阳能光伏电池和基于单壁碳纳米管的柔性透明传感器组件,并照上述方式集成即可获得基于单壁碳纳米管的柔性自供能气体传感器,该传感器组件可进行大角度0~180°、无限次弯折,且不影响传感器性能。
下面,通过实施例进一步详述本发明。
实施例1:利用气体传感器测试系统,将上述制备得到的自供能气体传感器放入透明的传感器测试系统内。在光照条件下,不施加外加电源,测试本发明自供能气体传感器对100ppm NO2的响应性能。
该自供能传感器在光照条件下,直接将光能转换为电能,驱动传感器组件工作,得到了不弱于甚至优于外加电源的响应性能曲线(图3),对比外加电源的条件,该集成的自供能气体传感器有着更明显的响应幅值,更快的响应时间和回复时间,以及极弱的曲线偏移,更接近理想的方波曲线。
实施例2:利用气体传感器测试系统,将制备的柔性自供能传感器放入透明的传感器测试系统内。在光照条件下,不施加外加电源,测试本发明自供能气体传感器对100ppmNH3的响应性能。
该柔性自供能传感器在光照条件下,直接将光能转换为电能,驱动传感器组件工作,得到了与实施例1类似的的曲线,区别则是实施例1在100ppm的NO2气氛下,电流增大;而实施例2中,当传感器暴露在100ppm的NH3气氛下,电流减小。
实施例3:利用气体传感器测试系统,将制备得到的传感器放入透明的传感器测试系统腔体内。在光照等条件下,不施加外加电源,测试本发明自供能气体传感器对100ppmO2的响应性能。
该柔性自供能传感器在光照条件下,直接将光能转换为电能,驱动传感器组件工作,得到了与实施例1类似的响应曲线。
比较例1:利用气体传感器测试系统,将上述制备得到的传感器放入透明的传感器测试系统腔体内。在不施加外加电源和黑暗条件下,测试本发明自供能气体传感器对100ppm NO2的响应性能。实验结果表明,没有输出的电流信号。
比较例2:利用气体传感器测试系统,将上述制备得到的传感器放入透明的传感器测试系统腔体内。利用外加电源,测试本发明自供能气体传感器对100ppm NO2的响应性能测试曲线,见图4。
从电流时间曲线上可以看到,在外加0.1V电压的条件下,传感器对100ppm的二氧化氮气体有着较好的响应值,较快的响应时间和回复时间,但却存在着一个较大幅度的曲线偏移。
实施例结果表明,本发明将基于碳纳米管的低能耗气体传感器和基于碳纳米管的太阳能光伏电池相结合,提出、设计一种自供能传感器,实现了传感器自供能一体化。此外,通过进一步的器件结构设计优化,可实现基于碳纳米管的柔性自供能传感器一体化。本发明实现了小而轻、高性能自供能气体传感器的制备,并可进一步通过优化设计集成柔性可弯折的自供能气体传感器,突破了目前金属氧化物气体传感器在柔性、重量、能耗、供能等方面的局限性。
本发明并不局限于上述的实施例,并非为对本发明的范围进行限定,涉及在本发明思路下,本领域工程技术人员对本方案做出的各种变型及改进,均应属于本发明的权利要求的保护。
Claims (5)
1.一种基于单壁碳纳米管的自供能气体传感器的制备方法,其特征在于,利用单壁碳纳米管薄膜作为气体敏感材料与基体构建气体传感单元,同时利用单壁碳纳米管薄膜与硅构建的异质结太阳能光伏电池自供能单元作为供电系统,利用电极材料将两部分连接,即获得供电、传感一体化的气体传感器;
单壁碳纳米管薄膜为采用浮动催化剂化学气相沉积法制备的直接收集在滤膜上的薄膜宏观体,再经压印转移至基体上,形成单壁碳纳米管/基体复合膜,即构建出基于单壁碳纳米管的气体传感单元;
单壁碳纳米管薄膜/硅异质结太阳能光伏电池的制备方法如下:首先将沉积于滤膜上的碳纳米管透明导电薄膜裁剪成需要的尺寸;再将其直接转移至硅基体上,滴加无水乙醇,使碳纳米管透明导电薄膜与硅基体紧密接触;然后制备上电极和下电极,即得太阳能光伏电池自供能单元,在光照条件下稳定提供输出电压;
该自供能气体传感器检测ppm甚至ppb量级的气体,响应时间在10秒以内;
该自供能气体传感器进行大角度0~180°、无限次弯折时,不影响传感器性能。
2.按照权利要求1所述的基于单壁碳纳米管的自供能气体传感器的制备方法,其特征在于,基体为刚性基体或者柔性、透明基体,刚性基体包括但不限于硅片、玻璃片或电路板,柔性、透明基体包括但不限于聚对苯二甲酸乙二酯薄膜、聚萘二甲酸乙二醇酯、聚二甲基硅氧烷或聚酰亚胺。
3.按照权利要求1至2之一所述的基于单壁碳纳米管的自供能气体传感器的制备方法,其特征在于,将气体传感单元裁减成需要的尺寸,利用电极材料将气体传感单元与太阳能光伏电池自供能单元,以磁控溅射、热蒸发、电镀或银胶方式连接,即完成基于单壁碳纳米管的自供能气体传感器的组装。
4.按照权利要求3所述的基于单壁碳纳米管的自供能气体传感器的制备方法,其特征在于,电极材料为金属或非金属,金属包括但不限于铜、金、银或铝,非金属包括但不限于碳纳米管、石墨烯或ITO。
5.按照权利要求1所述的基于单壁碳纳米管的自供能气体传感器的制备方法,其特征在于,在光照条件下,该自供能气体传感器集成的基于碳纳米管薄膜的太阳能光伏电池模块输出供气体传感器工作的稳定电压,无需其他外接电源可使传感器正常工作。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201910857326.9A CN112485296B (zh) | 2019-09-11 | 2019-09-11 | 基于单壁碳纳米管的自供能气体传感器的制备方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201910857326.9A CN112485296B (zh) | 2019-09-11 | 2019-09-11 | 基于单壁碳纳米管的自供能气体传感器的制备方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN112485296A CN112485296A (zh) | 2021-03-12 |
CN112485296B true CN112485296B (zh) | 2022-04-05 |
Family
ID=74920540
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201910857326.9A Active CN112485296B (zh) | 2019-09-11 | 2019-09-11 | 基于单壁碳纳米管的自供能气体传感器的制备方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN112485296B (zh) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN115520855A (zh) * | 2022-09-20 | 2022-12-27 | 中国科学院金属研究所 | 一种对单壁碳纳米管薄膜进行高效、可控氮掺杂的方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104677879A (zh) * | 2015-02-11 | 2015-06-03 | 中国科学院金属研究所 | 一种基于半导体性单壁碳纳米管的柔性、透明气体传感器 |
CN105489386A (zh) * | 2016-01-13 | 2016-04-13 | 肖白玉 | 一种具有快速检测气体功能的太阳能电池边框 |
JP2016090510A (ja) * | 2014-11-10 | 2016-05-23 | 富士通株式会社 | ガスセンサ及びその製造方法 |
CN110165011A (zh) * | 2018-02-13 | 2019-08-23 | 中国科学院金属研究所 | 一种无损转移碳纳米管薄膜制备异质结太阳能电池的方法 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6683783B1 (en) * | 1997-03-07 | 2004-01-27 | William Marsh Rice University | Carbon fibers formed from single-wall carbon nanotubes |
-
2019
- 2019-09-11 CN CN201910857326.9A patent/CN112485296B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016090510A (ja) * | 2014-11-10 | 2016-05-23 | 富士通株式会社 | ガスセンサ及びその製造方法 |
CN104677879A (zh) * | 2015-02-11 | 2015-06-03 | 中国科学院金属研究所 | 一种基于半导体性单壁碳纳米管的柔性、透明气体传感器 |
CN105489386A (zh) * | 2016-01-13 | 2016-04-13 | 肖白玉 | 一种具有快速检测气体功能的太阳能电池边框 |
CN110165011A (zh) * | 2018-02-13 | 2019-08-23 | 中国科学院金属研究所 | 一种无损转移碳纳米管薄膜制备异质结太阳能电池的方法 |
Non-Patent Citations (1)
Title |
---|
金属催化剂控制生长单壁碳纳米管研究进展;吉忠海 等;《金属学报》;20181130;第56卷(第11期);1665-1682 * |
Also Published As
Publication number | Publication date |
---|---|
CN112485296A (zh) | 2021-03-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Tang et al. | Recent progress in power generation from water/liquid droplet interaction with solid surfaces | |
Tulliani et al. | Carbon-based materials for humidity sensing: A short review | |
Stanford et al. | Laser-induced graphene for flexible and embeddable gas sensors | |
Zhong et al. | A self-powered flexibly-arranged gas monitoring system with evaporating rainwater as fuel for building atmosphere big data | |
Chen et al. | Foldable all‐solid‐state supercapacitors integrated with photodetectors | |
Zhang et al. | A lightweight polymer solar cell textile that functions when illuminated from either side | |
Han et al. | Carbon nanotube based humidity sensor on cellulose paper | |
Chen et al. | Surface effects on optical and electrical properties of ZnO nanostructures | |
Jiao et al. | Emerging hydrovoltaic technology based on carbon black and porous carbon materials: A mini review | |
Hu et al. | Wearable power source: a newfangled feasibility for perovskite photovoltaics | |
Cao et al. | Tandem structure of aligned carbon nanotubes on Au and its solar thermal absorption | |
Zhao et al. | Facile primary battery-based humidity sensor for multifunctional application | |
Demir et al. | Humidity sensing properties of CdS nanoparticles synthesized by chemical bath deposition method | |
CN112485296B (zh) | 基于单壁碳纳米管的自供能气体传感器的制备方法 | |
Zhang et al. | Voltage distribution in porous carbon black films induced by water evaporation | |
CN102097218A (zh) | 一种量子点敏化太阳能电池 | |
Yuen et al. | A fully-flexible solution-processed autonomous glucose indicator | |
Falco et al. | Low-cost gas sensing: Dynamic self-compensation of humidity in cnt-based devices | |
Li et al. | Carbon nano thorn arrays based water/cold resisted nanogenerator for wind energy harvesting and speed sensing | |
Gao et al. | 2D Graphene‐Based Macroscopic Assemblies for Micro‐Supercapacitors | |
Zheng et al. | Materials for evaporation‐driven hydrovoltaic technology | |
Jia et al. | Carbon nanotube-silicon nanowire heterojunction solar cells with gas-dependent photovoltaic performances and their application in self-powered NO 2 detecting | |
Zhang et al. | Laser processing of crumpled porous graphene/MXene nanocomposites for a standalone gas sensing system | |
CN111505062B (zh) | 一种基于有机-无机异质结的光伏自驱动柔性气体传感器及其制备方法 | |
CN101556257A (zh) | 直热式碳纳米管气体传感器及敏感膜的制备方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant |