JP2016062928A - 半導体装置の製造装置と半導体装置の製造方法 - Google Patents
半導体装置の製造装置と半導体装置の製造方法 Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
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- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68318—Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
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- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68318—Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
- H01L2221/68322—Auxiliary support including means facilitating the selective separation of some of a plurality of devices from the auxiliary support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
- H01L2221/68336—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding involving stretching of the auxiliary support post dicing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68363—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68368—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
Abstract
Description
本実施形態の半導体装置の製造装置100は、プレート部10と、フレーム部20と、テープ部30と、シールリング40とを有する。
図2に示すように、フレーム部20の形状は、リング状であり、第1フレーム21および第2フレーム22のそれぞれの形状は、同様のリング状を有する。例えば、フレーム部20の外径は296mmであり、内径は250mmであり、厚さは1.2mmである。プレート部10と同様に、フレーム部20として減圧に耐えられる材料が用いられ、例えばステンレス鋼が用いられる。
図4(a)〜図4(c)は、本実施形態のシールリング40の模式断面図である。
図4(a)、図4(b)および図4(c)のそれぞれは、図4(a)におけるA−A’断面図、B−B’断面図およびC−C’断面図である。
図5に示すように、本製造装置100は、例えば補強板12aと、透明板12bとを有する。透明板12bは、補強板12aと、転写先テープ32との間に設けられている。透明板12bとして、例えばアクリル板が用いられる。
図6(b)は、図6(a)に対する断面図である。
図14は、実施形態の半導体装置の実装面側の模式平面図であり、図13における下面図に対応する。
図16(b)に示すように、例えば、領域115eは発光領域115dに囲まれた島状に形成され、また、領域115eは発光領域115dの外周側に、発光領域115dを連続して囲むように形成されている。発光領域115dの面積は、領域115eの面積よりも広い。
Claims (17)
- 第1面を有する第1テープと、
前記第1面の反対側で前記第1テープを支持する第1支持部と、
前記第1テープの前記第1面に対向する第2面を有する第2テープと、
前記第2面の反対側で前記第2テープを支持する第2支持部と、
前記第1テープと前記第2テープとの間に設けられ、前記第1面および前記第2面側に通じる孔を有するリングと、
を備える半導体装置の製造装置。 - 前記第1テープの外周部に設けられた第1フレームと、
前記第2テープの外周部に設けられた第2フレームと、
をさらに備えた請求項1記載の半導体装置の製造装置。 - 前記リングは、前記第1フレームと前記第1面との間、および前記第2フレームと前記第2面との間に配置される請求項2記載の半導体装置の製造装置。
- 前記リングの厚さは、前記第1フレームと、前記第2フレームと、を重ね合わせた厚さよりも厚い請求項2または3に記載の半導体装置の製造装置。
- 前記リングの前記孔は、
前記リングの厚さ方向に延びる縦孔と、
前記第1面および前記第2面側に通じる横孔と、
前記リングの周方向に延び、前記縦孔と前記横孔とを接続する接続部と、
を有する請求項1〜4のいずれか1つに記載の半導体装置の製造装置。 - 複数の前記横孔が、前記リングの周方向に沿って配置されている請求項5記載の半導体装置の製造装置。
- 前記複数の横孔は、前記リングの周方向に沿って等間隔で配置されている請求項6記載の半導体装置の製造装置。
- 前記第1フレームおよび前記第2フレームのそれぞれは、側面に切れ込み部を有する請求項2記載の半導体装置の製造装置。
- 前記リングは、前記リングの外周部に設けられ、前記リングの厚さよりも薄いサポート部を有する請求項1〜8のいずれか1つに記載の半導体装置の製造装置。
- 前記第2支持部は、
貫通孔を有する補強板と、
前記補強板と前記第2テープとの間に設けられた透明板と、
を有する請求項1〜9のいずれか1つに記載の半導体装置の製造装置。 - 前記第1支持部および前記第2支持部は、ステンレス鋼を含む請求項1〜10のいずれか1つに記載の半導体装置の製造装置。
- 前記リングは、シリコーンを含む請求項1〜11のいずれか1つに記載の半導体装置の製造装置。
- 前記第1フレームおよび前記第2フレームは、ステンレス鋼を含む請求項2記載の半導体装置の製造方法。
- 前記リングの前記孔は、前記第1支持部および前記第1テープに形成された第1貫通孔、または前記第2支持部および前記第2テープに形成された第2貫通孔を介して、前記真空排気部と接続されている請求項1〜13のいずれか1つに記載の半導体装置の製造装置。
- 第1面に半導体素子が貼り付けられた第1テープの前記半導体素子に対して、第2テープの第2面を対向させ、
前記第1面と前記第2面との間の、前記半導体素子を含む空間の周囲をリングで囲み、
前記空間内を排気して、前記半導体素子を前記第2テープの前記第2面に貼り付け、
前記空間内に給気して、前記第1テープの前記第1面から前記半導体層を剥離する半導体装置の製造方法。 - 前記半導体素子は、前記第1面上で分離している複数の半導体チップを有し、
前記複数の半導体チップから間引きされた第1群が、前記第1テープの前記第1面から剥離され、前記第2テープの前記第2面に転写される請求項15記載の半導体装置の製造方法。 - 前記第1群は、前記第1面上で隣り合うそれぞれの前記半導体チップを含まない請求項16記載の半導体装置の製造方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
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JP2014187116A JP6271380B2 (ja) | 2014-09-12 | 2014-09-12 | 半導体装置の製造装置と半導体装置の製造方法 |
TW104106387A TWI651792B (zh) | 2014-09-12 | 2015-02-26 | 半導體裝置之製造裝置及半導體裝置之製造方法 |
US14/634,881 US10170352B2 (en) | 2014-09-12 | 2015-03-01 | Manufacturing apparatus of semiconductor device, and manufacturing method of semiconductor device |
CN201510097047.9A CN105990206B (zh) | 2014-09-12 | 2015-03-04 | 半导体装置的制造装置以及半导体装置的制造方法 |
US16/189,537 US20190080953A1 (en) | 2014-09-12 | 2018-11-13 | Manufacturing apparatus of semiconductor device, and manufacturing method of semiconductor device |
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JP2017191275A Division JP6530460B2 (ja) | 2017-09-29 | 2017-09-29 | 半導体装置 |
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Cited By (2)
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JP7117472B1 (ja) * | 2021-04-30 | 2022-08-12 | 信越エンジニアリング株式会社 | 転写装置及び転写方法 |
JP7304775B2 (ja) | 2019-08-29 | 2023-07-07 | 株式会社ディスコ | ウェーハの加工方法 |
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US9633883B2 (en) | 2015-03-20 | 2017-04-25 | Rohinni, LLC | Apparatus for transfer of semiconductor devices |
US10141215B2 (en) | 2016-11-03 | 2018-11-27 | Rohinni, LLC | Compliant needle for direct transfer of semiconductor devices |
US10471545B2 (en) | 2016-11-23 | 2019-11-12 | Rohinni, LLC | Top-side laser for direct transfer of semiconductor devices |
US10504767B2 (en) | 2016-11-23 | 2019-12-10 | Rohinni, LLC | Direct transfer apparatus for a pattern array of semiconductor device die |
KR102313698B1 (ko) * | 2017-09-01 | 2021-10-15 | 매그나칩 반도체 유한회사 | 유연성 있는 반도체 패키지 및 이의 제조 방법 |
CN107818931B (zh) * | 2017-09-30 | 2021-10-19 | 厦门市三安光电科技有限公司 | 半导体微元件的转移方法及转移装置 |
US10410905B1 (en) | 2018-05-12 | 2019-09-10 | Rohinni, LLC | Method and apparatus for direct transfer of multiple semiconductor devices |
US11094571B2 (en) | 2018-09-28 | 2021-08-17 | Rohinni, LLC | Apparatus to increase transferspeed of semiconductor devices with micro-adjustment |
JP7044978B2 (ja) * | 2019-09-19 | 2022-03-31 | 日亜化学工業株式会社 | 発光装置及び照明装置、並びに、それらの製造方法 |
WO2023163944A1 (en) * | 2022-02-22 | 2023-08-31 | Nanosys, Inc. | Apparatus and method for transferring light-emitting diodes |
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2014
- 2014-09-12 JP JP2014187116A patent/JP6271380B2/ja active Active
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2015
- 2015-02-26 TW TW104106387A patent/TWI651792B/zh active
- 2015-03-01 US US14/634,881 patent/US10170352B2/en active Active
- 2015-03-04 CN CN201510097047.9A patent/CN105990206B/zh active Active
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- 2018-11-13 US US16/189,537 patent/US20190080953A1/en not_active Abandoned
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JP7304775B2 (ja) | 2019-08-29 | 2023-07-07 | 株式会社ディスコ | ウェーハの加工方法 |
JP7117472B1 (ja) * | 2021-04-30 | 2022-08-12 | 信越エンジニアリング株式会社 | 転写装置及び転写方法 |
WO2022230184A1 (ja) * | 2021-04-30 | 2022-11-03 | 信越エンジニアリング株式会社 | 転写装置及び転写方法 |
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TWI651792B (zh) | 2019-02-21 |
TW201611151A (zh) | 2016-03-16 |
US20190080953A1 (en) | 2019-03-14 |
US20160079112A1 (en) | 2016-03-17 |
CN105990206B (zh) | 2019-06-14 |
CN105990206A (zh) | 2016-10-05 |
US10170352B2 (en) | 2019-01-01 |
JP6271380B2 (ja) | 2018-01-31 |
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