JP2016062647A - 透明導電膜、これを用いた装置または太陽電池、及び透明導電膜の製造方法 - Google Patents
透明導電膜、これを用いた装置または太陽電池、及び透明導電膜の製造方法 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 8
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 75
- 239000001257 hydrogen Substances 0.000 claims abstract description 64
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 64
- 229910052684 Cerium Inorganic materials 0.000 claims abstract description 36
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 claims abstract description 36
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims abstract description 28
- 229910003437 indium oxide Inorganic materials 0.000 claims abstract description 27
- 229910052747 lanthanoid Inorganic materials 0.000 claims abstract description 6
- 150000002602 lanthanoids Chemical class 0.000 claims abstract description 6
- 239000013078 crystal Substances 0.000 claims description 109
- 239000000203 mixture Substances 0.000 claims description 30
- 239000010408 film Substances 0.000 description 114
- 238000000137 annealing Methods 0.000 description 87
- 230000000052 comparative effect Effects 0.000 description 82
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 80
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 59
- 239000001301 oxygen Substances 0.000 description 59
- 229910052760 oxygen Inorganic materials 0.000 description 59
- 229910052786 argon Inorganic materials 0.000 description 40
- 239000000843 powder Substances 0.000 description 23
- 239000000758 substrate Substances 0.000 description 17
- 230000008020 evaporation Effects 0.000 description 12
- 238000001704 evaporation Methods 0.000 description 12
- 238000001878 scanning electron micrograph Methods 0.000 description 10
- 239000012535 impurity Substances 0.000 description 9
- 238000010438 heat treatment Methods 0.000 description 6
- 239000007789 gas Substances 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000000969 carrier Substances 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 229910052738 indium Inorganic materials 0.000 description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 229910001882 dioxygen Inorganic materials 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005401 electroluminescence Methods 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000005355 Hall effect Effects 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229920001903 high density polyethylene Polymers 0.000 description 1
- 239000004700 high-density polyethylene Substances 0.000 description 1
- 238000004949 mass spectrometry Methods 0.000 description 1
- 238000001819 mass spectrum Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000013081 microcrystal Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
- H01B5/14—Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/14—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
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- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/26—Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode
- H05B33/28—Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode of translucent electrodes
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Abstract
Description
そこで、本発明は、セリウムの濃度及び成長雰囲気中の水素源の分圧を適切に調整することにより、高いホール移動度となる透明導電膜を提供することを目的とする。
上記構成により、透明導電膜の結晶性を高めることができる。
上記構成により、結晶粒界散乱の影響を低減して、高いホール移動度を有する透明導電膜を備えた装置となる。
上記構成により、結晶粒界散乱の影響を低減して、高いホール移動度を有する透明導電膜を備えた太陽電池となる。
CeO2粉末を3wt%含むIn2O3粉末の焼結体を蒸発源とし、かつ水素源の分圧が8.2×10−4Paとなるように水素ガスを供給し、アルゴンに対する酸素の導入比を7.5%〜15%の範囲で変化させて一連の透明導電膜12を成膜した。その後、それぞれ大気中において200℃で30分アニールした。
[実施例2]
実施例1に類似するが、CeO2粉末を2wt%含むIn2O3粉末の焼結体を用いた点で実施例1と相違する。
[実施例3]
実施例1に類似するが、CeO2粉末を1wt%含むIn2O3粉末の焼結体を用いた点で実施例1と相違する。
[比較例1]
実施例1に類似するが、水素ガスを供給しない点で実施例1に相違する。ただし、分圧が4.0×10−4Paとなる水素源が成長雰囲気のバックグラウンドとして存在する。
[比較例2]
実施例1に類似するが、水素源の分圧が9.4×10−4Paとなるように水素ガスを供給した点で相違する。
[比較例3]
実施例1に類似するが、水素源の分圧が1.0×10−3Paとなるように水素ガスを供給した点で相違する。
[比較例4]
実施例1に類似するが、水素源の分圧が1.2×10−3Paとなるように水素ガスを供給した点で相違する。
[比較例5]
実施例1に類似するが、CeO2粉末を含有しない(CeO2粉末の含有量が0wt%)In2O3粉末の焼結体を用いた点で実施例1と相違する。
[比較例6]
実施例1に類似するが、CeO2粉末を含有しないIn2O3粉末の焼結体を用いた点、及び水素源の分圧が1.2×10−3Paとなるように水素ガスを供給した点で実施例1と相違する。
前述のように、実施例1において、ホール移動度は、図1,2に示すように、酸素導入比が9%以上で、120cm2/(V・s)以上の値を維持している。また図19に示すように、実施例1のプロットデータは、イオン化不純物散乱に起因する曲線μI上に並んでおり、ホール移動度が粒界散乱の影響をほとんど受けていいないと考えられる。
Claims (6)
- 水素及びランタノイド系元素を含有する酸化インジウムの多結晶構造からなる透明導電膜であって、ホール移動度が120cm2/(V・s)以上であることを特徴とする透明導電膜。
- 酸化インジウムの多結晶構造からなる透明導電膜であって、
前記多結晶構造を構成する多数の島状結晶と、
互いに隣接する前記島状結晶の間を埋めるように配置されたバッファー結晶と、を有し、
前記バッファー結晶は、
前記バッファー結晶に接続する第1の島状結晶から前記バッファー結晶を経由して前記バッファー結晶に接続する第2の島状結晶に向かうにつれて、前記第1の島状結晶の結晶構造から前記第2の島状結晶の結晶構造へ連続的に変化する結晶構造を有していることを特徴とする透明導電膜。 - セリウムを含有し、その原子組成百分率が0.23%以上であることを特徴とする請求項2に記載の透明導電膜。
- 請求項1乃至3のいずれか1項に記載の透明導電膜を有することを特徴とする装置。
- 請求項1乃至3のいずれか1項に記載の透明導電膜を有することを特徴とする太陽電池。
- 水素及びランタノイド系元素を含有する酸化インジウムの多結晶構造からなる透明導電膜の製造方法であって、
前記透明導電膜のキャリア密度とホール移動度との関係が、前記透明導電膜における結晶粒界散乱の影響を排除したキャリア密度とホール移動度との関係にほぼ一致するように、前記透明導電膜の成長雰囲気の水素源の分圧を調整することを特徴とする透明導電膜の製造方法。
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JP2014186841A JP6037239B2 (ja) | 2014-09-12 | 2014-09-12 | 透明導電膜、これを用いた装置または太陽電池、及び透明導電膜の製造方法 |
PCT/JP2015/073214 WO2016039097A1 (ja) | 2014-09-12 | 2015-08-19 | 透明導電膜、これを用いた装置または太陽電池、及び透明導電膜の製造方法 |
TW104128818A TWI676996B (zh) | 2014-09-12 | 2015-09-01 | 透明導電膜、使用此之裝置或太陽能電池及透明導電膜之製造方法 |
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JP2014186841A JP6037239B2 (ja) | 2014-09-12 | 2014-09-12 | 透明導電膜、これを用いた装置または太陽電池、及び透明導電膜の製造方法 |
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JP6037239B2 JP6037239B2 (ja) | 2016-12-07 |
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CN108350567B (zh) * | 2016-08-25 | 2019-06-14 | 株式会社爱发科 | 成膜装置及成膜方法以及太阳能电池的制造方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08245220A (ja) * | 1994-06-10 | 1996-09-24 | Hoya Corp | 導電性酸化物およびそれを用いた電極 |
WO2011034143A1 (ja) * | 2009-09-17 | 2011-03-24 | 三洋電機株式会社 | 透明導電膜及びこれを備えた装置 |
WO2011115177A1 (ja) * | 2010-03-19 | 2011-09-22 | 住友金属鉱山株式会社 | 透明導電膜 |
JP2012253315A (ja) * | 2010-12-28 | 2012-12-20 | Idemitsu Kosan Co Ltd | 酸化物半導体薄膜層を有する積層構造及び薄膜トランジスタ |
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WO2009081677A1 (ja) * | 2007-12-25 | 2009-07-02 | Idemitsu Kosan Co., Ltd. | 酸化スズ-酸化マグネシウム系スパッタリングターゲット及び透明半導体膜 |
JP2014095099A (ja) * | 2012-11-07 | 2014-05-22 | Sumitomo Metal Mining Co Ltd | 透明導電膜積層体及びその製造方法、並びに薄膜太陽電池及びその製造方法 |
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Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08245220A (ja) * | 1994-06-10 | 1996-09-24 | Hoya Corp | 導電性酸化物およびそれを用いた電極 |
WO2011034143A1 (ja) * | 2009-09-17 | 2011-03-24 | 三洋電機株式会社 | 透明導電膜及びこれを備えた装置 |
WO2011115177A1 (ja) * | 2010-03-19 | 2011-09-22 | 住友金属鉱山株式会社 | 透明導電膜 |
JP2012253315A (ja) * | 2010-12-28 | 2012-12-20 | Idemitsu Kosan Co Ltd | 酸化物半導体薄膜層を有する積層構造及び薄膜トランジスタ |
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TWI676996B (zh) | 2019-11-11 |
WO2016039097A1 (ja) | 2016-03-17 |
JP6037239B2 (ja) | 2016-12-07 |
TW201626405A (zh) | 2016-07-16 |
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