JP2016046470A - 被処理体をエッチングする方法 - Google Patents
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- 238000005530 etching Methods 0.000 title claims abstract description 45
- 239000007789 gas Substances 0.000 claims abstract description 141
- 230000005291 magnetic effect Effects 0.000 claims abstract description 60
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 11
- 238000012545 processing Methods 0.000 claims description 86
- 239000001307 helium Substances 0.000 claims description 22
- 229910052734 helium Inorganic materials 0.000 claims description 22
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 22
- 229910052754 neon Inorganic materials 0.000 claims description 19
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 claims description 17
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 16
- 229910052756 noble gas Inorganic materials 0.000 claims description 12
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 10
- 229910052743 krypton Inorganic materials 0.000 claims description 10
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 claims description 9
- 229910019236 CoFeB Inorganic materials 0.000 claims description 5
- 229910052786 argon Inorganic materials 0.000 claims description 5
- 229910052724 xenon Inorganic materials 0.000 claims description 5
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 claims description 5
- 229910018979 CoPt Inorganic materials 0.000 claims 1
- 230000008569 process Effects 0.000 abstract description 18
- 239000012212 insulator Substances 0.000 abstract description 3
- 239000011261 inert gas Substances 0.000 abstract 3
- 230000015556 catabolic process Effects 0.000 abstract 1
- 238000006731 degradation reaction Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 98
- 229910052715 tantalum Inorganic materials 0.000 description 11
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 11
- 238000012546 transfer Methods 0.000 description 11
- 230000000052 comparative effect Effects 0.000 description 8
- 239000003507 refrigerant Substances 0.000 description 6
- 230000006870 function Effects 0.000 description 5
- 230000005415 magnetization Effects 0.000 description 5
- IGOJMROYPFZEOR-UHFFFAOYSA-N manganese platinum Chemical compound [Mn].[Pt] IGOJMROYPFZEOR-UHFFFAOYSA-N 0.000 description 5
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 4
- GUBSQCSIIDQXLB-UHFFFAOYSA-N cobalt platinum Chemical compound [Co].[Pt].[Pt].[Pt] GUBSQCSIIDQXLB-UHFFFAOYSA-N 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 229910052707 ruthenium Inorganic materials 0.000 description 4
- 239000003302 ferromagnetic material Substances 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 2
- 239000002885 antiferromagnetic material Substances 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 229910002091 carbon monoxide Inorganic materials 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- -1 hydrogen ions Chemical class 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000000696 magnetic material Substances 0.000 description 2
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- 238000005259 measurement Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910052723 transition metal Inorganic materials 0.000 description 2
- 150000003624 transition metals Chemical class 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
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Abstract
【解決手段】 一実施形態では、下部電極と、該下部電極上に設けられる多層膜であり、第1の磁性層、第2の磁性層、及び第1の磁性層と第2の磁性層との間に介在する絶縁層を含む該多層膜と、を含む被処理体をマスクを介してエッチングする方法が提供される。この方法は、第1の希ガス、及び、該第1の希ガスよりも大きい原子番号を有する第2の希ガスを含み、且つ、水素ガスを含まない第1の処理ガスのプラズマに被処理体を晒す工程を含む。
【選択図】図1
Description
まず、方法MTの工程ST1の有効性について評価した。実験例1では、第1の処理ガスのプラズマを用いてマスクMKを介して多層膜MLをエッチングした。比較実験例1では、窒素(N2)ガス及びネオンガスのプラズマを用いてマスクMKを介して多層膜MLをエッチングした。そして、実験例1及び比較実験例1でエッチングされた多層膜MLの側壁面の垂直性を評価した。実験例1及び比較実験例1の処理条件は以下の通りとした。
・処理容器12内圧力:10mTorr(1.333Pa)
・プラズマ生成用高周波電力:200W
・高周波バイアス電力:800W
・クリプトンガスの流量:85sccm
・メタンガスの流量:15sccm
・ヘリウムガスの流量:100sccm
・被処理体温度:10℃
・処理容器12内圧力:10mTorr(1.333Pa)
・プラズマ生成用高周波電力:200W
・高周波バイアス電力:800W
・窒素ガスの流量:50sccm
・ネオンガスの流量:150sccm
・被処理体温度:10℃
・比較実験例1で得られた多層膜MLの角度:29.84°
次に、方法MTの工程ST2の有効性について評価した。実験例2では、図4に示すように、工程ST1によって多層膜MLが下部電極102の表面までエッチングされた被処理体Wに対して第2のガスのプラズマを用いてオーバーエッチングを行った。そして、エッチング時間に対する上層114の膜厚MH、及び、多層膜MLの幅CDの変化を評価した。なお、図5に示すように、膜厚MHはオーバーエッチングを行った後に残った上層114の厚みであり、幅CDはオーバーエッチングを行った後の多層膜MLの底部の幅である。実験例2が実施される前の上層114の膜厚MHは61nmであり、多層膜MLの幅CDは76nmであった。また、実験例2の処理条件は以下の通りとした。
・処理容器12内圧力:10mTorr(1.333Pa)
・プラズマ生成用高周波電力:200W
・高周波バイアス電力:800W
・メタンガスの流量:15sccm
・一酸化炭素(CO)ガスの流量:43sccm
・ネオンガスの流量:85sccm
・ヘリウムガスの流量:57sccm
・被処理体温度:10℃
Claims (8)
- 下部電極と、該下部電極上に設けられる多層膜であり、第1の磁性層、第2の磁性層、及び前記第1の磁性層と前記第2の磁性層との間に介在する絶縁層を含む該多層膜と、を含む被処理体をマスクを介してエッチングする方法であって、
第1の希ガス、及び、該第1の希ガスよりも大きい原子番号を有する第2の希ガスを含み、且つ、水素ガスを含まない第1の処理ガスのプラズマに前記被処理体を晒す工程を含む、方法。 - ヘリウム及びネオンを含む第2の処理ガスのプラズマに前記被処理体を晒す工程であり、前記第1の処理ガスのプラズマに前記被処理体を晒す工程によって、前記多層膜がエッチングされて前記下部電極の表面が露出した後に行われる、該工程を更に含む、
請求項1に記載の方法。 - 前記第1の処理ガス及び前記第2の処理ガスは、メタンガスを更に含む、
請求項2に記載の方法。 - 前記多層膜は、前記下部電極と前記第1の磁性層との間に設けられる固定層を更に含む、
請求項1〜3の何れか一項に記載の方法。 - 前記第1の磁性層及び前記第2の磁性層は、CoFeBから構成され、
前記絶縁層は、MgOから構成され、
前記固定層は、CoPtから構成される、
請求項4に記載の方法。 - 前記マスクは、Taを含む、
請求項1〜5の何れか一項に記載の方法。 - 前記第1の希ガスは、ヘリウム又はネオンであり、
前記第2の希ガスは、アルゴン、クリプトン、キセノンのうち何れか1つである、
請求項1〜6の何れか一項に記載の方法。 - 前記第1の希ガスは、ヘリウムであり、
前記第2の希ガスは、クリプトンである、
請求項1〜7の何れか一項に記載の方法。
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JP2014171686A JP6285322B2 (ja) | 2014-08-26 | 2014-08-26 | 被処理体をエッチングする方法 |
US15/327,434 US9947864B2 (en) | 2014-08-26 | 2015-08-06 | Method for etching object to be processed |
PCT/JP2015/072378 WO2016031520A1 (ja) | 2014-08-26 | 2015-08-06 | 被処理体をエッチングする方法 |
KR1020177001874A KR102365473B1 (ko) | 2014-08-26 | 2015-08-06 | 피처리체를 에칭하는 방법 |
TW104127594A TWI644357B (zh) | 2014-08-26 | 2015-08-25 | 被處理體之蝕刻方法 |
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Cited By (3)
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CN108231575A (zh) * | 2016-12-22 | 2018-06-29 | 东京毅力科创株式会社 | 蚀刻方法 |
WO2018131215A1 (ja) * | 2017-09-21 | 2018-07-19 | 株式会社日立ハイテクノロジーズ | 磁気トンネル接合素子の製造方法および誘導結合型プラズマ処理装置 |
WO2019082716A1 (ja) * | 2017-10-27 | 2019-05-02 | 東京エレクトロン株式会社 | エッチング方法 |
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TWI644357B (zh) | 2018-12-11 |
WO2016031520A1 (ja) | 2016-03-03 |
KR20170048321A (ko) | 2017-05-08 |
US20170200886A1 (en) | 2017-07-13 |
US9947864B2 (en) | 2018-04-17 |
KR102365473B1 (ko) | 2022-02-21 |
TW201620036A (zh) | 2016-06-01 |
JP6285322B2 (ja) | 2018-02-28 |
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