JPWO2019082716A1 - エッチング方法 - Google Patents
エッチング方法 Download PDFInfo
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- JPWO2019082716A1 JPWO2019082716A1 JP2019551020A JP2019551020A JPWO2019082716A1 JP WO2019082716 A1 JPWO2019082716 A1 JP WO2019082716A1 JP 2019551020 A JP2019551020 A JP 2019551020A JP 2019551020 A JP2019551020 A JP 2019551020A JP WO2019082716 A1 JPWO2019082716 A1 JP WO2019082716A1
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- 238000000034 method Methods 0.000 title claims abstract description 73
- 238000005530 etching Methods 0.000 title claims abstract description 69
- 239000007789 gas Substances 0.000 claims abstract description 186
- 238000012545 processing Methods 0.000 claims abstract description 49
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 26
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 25
- 239000001301 oxygen Substances 0.000 claims abstract description 19
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 19
- 239000001257 hydrogen Substances 0.000 claims abstract description 16
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 16
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 14
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 12
- 238000004140 cleaning Methods 0.000 claims description 16
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 claims description 12
- 229910002091 carbon monoxide Inorganic materials 0.000 claims description 11
- 230000004888 barrier function Effects 0.000 claims description 9
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 229930195733 hydrocarbon Natural products 0.000 claims description 6
- 150000002430 hydrocarbons Chemical class 0.000 claims description 6
- 239000004215 Carbon black (E152) Substances 0.000 claims description 5
- 239000001569 carbon dioxide Substances 0.000 claims description 4
- 229910002092 carbon dioxide Inorganic materials 0.000 claims description 4
- 229910019236 CoFeB Inorganic materials 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 86
- 230000000052 comparative effect Effects 0.000 description 22
- 238000002474 experimental method Methods 0.000 description 14
- 150000002500 ions Chemical class 0.000 description 11
- 238000002360 preparation method Methods 0.000 description 11
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 10
- -1 hydrogen ions Chemical class 0.000 description 9
- 230000006866 deterioration Effects 0.000 description 7
- 239000011248 coating agent Substances 0.000 description 6
- 238000000576 coating method Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 229910001882 dioxygen Inorganic materials 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 239000003507 refrigerant Substances 0.000 description 4
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 229910017052 cobalt Inorganic materials 0.000 description 3
- 239000010941 cobalt Substances 0.000 description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 150000002431 hydrogen Chemical class 0.000 description 3
- 239000000395 magnesium oxide Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 229910052707 ruthenium Inorganic materials 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000007743 anodising Methods 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 230000005415 magnetization Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910002090 carbon oxide Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
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- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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Abstract
Description
<実験サンプル1の作製における処理条件>
・工程ST1
内部空間の圧力:10[mTorr](1.333[Pa])
第1のガス中のArガスの流量:25[sccm]
第1のガス中の一酸化炭素(CO)ガスの流量:175[sccm]
第1の高周波:60[MHz]、200[W]
第2の高周波:400[kHz]、800[W]
処理時間:5[秒]
・工程ST2
内部空間の圧力:10[mTorr](1.333[Pa])
第2のガス中のArガスの流量:194[sccm]
第2のガス中の酸素(O2)ガスの流量:6[sccm]
第1の高周波:60[MHz]、200[W]
第2の高周波:400[kHz]、800[W]
処理時間:5[秒]
・シーケンスの実行回数:35回
<比較サンプル1の作製における第1及び第2の工程の処理条件>
・第1の工程
内部空間の圧力:10[mTorr](1.333[Pa])
Krガスの流量:170[sccm]
メタン(CH4)ガスの流量:30[sccm]
第1の高周波:60[MHz]、200[W]
第2の高周波:400[kHz]、800[W]
処理時間:5[秒]
・第2の工程
内部空間の圧力:10[mTorr](1.333[Pa])
Neガスの流量:50[sccm]
酸素(O2)ガスの流量:10[sccm]
一酸化炭素(CO)ガスの流量:140[sccm]
第1の高周波:60[MHz]、200[W]
第2の高周波:400[kHz]、800[W]
処理時間:5[秒]
・シーケンスの実行回数:30回
Claims (9)
- 磁気抵抗効果素子の製造において実行される被加工物の多層膜のエッチング方法であって、
前記多層膜は、磁気トンネル接合層を有し、該磁気トンネル接合層は、第1の磁性層及び第2の磁性層、並びに、該第1の磁性層と該第2の磁性層との間に設けられたトンネルバリア層を含み、
該エッチング方法では、チャンバ本体を備えるプラズマ処理装置が用いられ、該チャンバ本体は内部空間を提供し、
該エッチング方法は、
前記内部空間の中に前記被加工物を収容する工程と、
前記内部空間の中で生成された第1のガスのプラズマにより前記多層膜をエッチングする工程であり、前記第1のガスは炭素及び希ガスを含み、水素を含まない、該工程と、
前記内部空間の中で生成された第2のガスのプラズマにより前記多層膜を更にエッチングする工程であり、前記第2のガスは、酸素及び希ガスを含み、炭素及び水素を含まない、該工程と、
を含むエッチング方法。 - 前記第1のガスは、酸素を更に含む、請求項1に記載のエッチング方法。
- 前記第1のガスは、一酸化炭素ガス又は二酸化炭素ガスを含む、請求項2に記載のエッチング方法。
- 第1のガスのプラズマにより前記多層膜をエッチングする前記工程と、第2のガスのプラズマにより前記多層膜を更にエッチングする前記工程とが交互に繰り返される、請求項1〜3の何れか一項に記載のエッチング方法。
- 前記内部空間の中に前記被加工物を収容する前記工程の実行前に、前記内部空間の中で、第3のガスのプラズマを生成する工程を更に含み、
前記第3のガスは、炭素を含むガスと希ガスとを含有する、
請求項1〜4の何れか一項に記載のエッチング方法。 - 前記第3のガスは、前記炭素を含む前記ガスとして、炭化水素を含むガスを含有する、請求項5に記載のエッチング方法。
- 第1のガスのプラズマにより前記多層膜をエッチングする前記工程と、第2のガスのプラズマにより前記多層膜を更にエッチングする前記工程とが実行されることによって前記多層膜がエッチングされた後に、前記内部空間を画成する表面のクリーニングを実行する工程と、
を更に含む、請求項5又は6に記載のエッチング方法。 - 前記多層膜がエッチングされた後、且つ、クリーニングを実行する前記工程の前に、前記被加工物を前記内部空間から搬出する工程、を更に含む、請求項7に記載のエッチング方法。
- 前記第1の磁性層及び前記第2の磁性層の各々はCoFeB層であり、前記トンネルバリア層はMgO層である、請求項1〜8の何れか一項に記載のエッチング方法。
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PCT/JP2018/038367 WO2019082716A1 (ja) | 2017-10-27 | 2018-10-15 | エッチング方法 |
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US (1) | US20200243759A1 (ja) |
JP (1) | JP7001703B2 (ja) |
KR (1) | KR102546091B1 (ja) |
CN (1) | CN111201588A (ja) |
TW (1) | TW201923895A (ja) |
WO (1) | WO2019082716A1 (ja) |
Citations (5)
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---|---|---|---|---|
JP2013051227A (ja) * | 2011-08-30 | 2013-03-14 | Hitachi High-Technologies Corp | プラズマエッチング方法 |
JP2014112664A (ja) * | 2012-10-30 | 2014-06-19 | Tokyo Electron Ltd | エッチング処理方法及び基板処理装置 |
JP2014183184A (ja) * | 2013-03-19 | 2014-09-29 | Tokyo Electron Ltd | コバルト及びパラジウムを含む膜をエッチングする方法 |
JP2016046470A (ja) * | 2014-08-26 | 2016-04-04 | 東京エレクトロン株式会社 | 被処理体をエッチングする方法 |
JP2016164955A (ja) * | 2015-03-06 | 2016-09-08 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
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US5952060A (en) * | 1996-06-14 | 1999-09-14 | Applied Materials, Inc. | Use of carbon-based films in extending the lifetime of substrate processing system components |
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JP2013051227A (ja) * | 2011-08-30 | 2013-03-14 | Hitachi High-Technologies Corp | プラズマエッチング方法 |
JP2014112664A (ja) * | 2012-10-30 | 2014-06-19 | Tokyo Electron Ltd | エッチング処理方法及び基板処理装置 |
JP2014183184A (ja) * | 2013-03-19 | 2014-09-29 | Tokyo Electron Ltd | コバルト及びパラジウムを含む膜をエッチングする方法 |
JP2016046470A (ja) * | 2014-08-26 | 2016-04-04 | 東京エレクトロン株式会社 | 被処理体をエッチングする方法 |
JP2016164955A (ja) * | 2015-03-06 | 2016-09-08 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
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KR102546091B1 (ko) | 2023-06-22 |
KR20200067881A (ko) | 2020-06-12 |
CN111201588A (zh) | 2020-05-26 |
TW201923895A (zh) | 2019-06-16 |
JP7001703B2 (ja) | 2022-01-20 |
US20200243759A1 (en) | 2020-07-30 |
WO2019082716A1 (ja) | 2019-05-02 |
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