JP2016020001A - 金属部材およびその表面加工方法、半導体装置およびその製造方法、複合成形体 - Google Patents
金属部材およびその表面加工方法、半導体装置およびその製造方法、複合成形体 Download PDFInfo
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- JP2016020001A JP2016020001A JP2014210764A JP2014210764A JP2016020001A JP 2016020001 A JP2016020001 A JP 2016020001A JP 2014210764 A JP2014210764 A JP 2014210764A JP 2014210764 A JP2014210764 A JP 2014210764A JP 2016020001 A JP2016020001 A JP 2016020001A
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- thin film
- metal thin
- metal
- semiconductor device
- laser beam
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Abstract
Description
本発明の第1実施形態について図1〜図5を参照して説明する。本実施形態では、金属部材と樹脂部材の複合成形体の一例として、金属部材であるリードフレーム2と樹脂部材であるモールド樹脂4とを有する半導体装置1について説明する。
本発明の第2実施形態について図12、図13を参照して説明する。本実施形態は、第1実施形態に対して、複数の溝22bの代わりに別の複数の溝22dを形成したものであり、その他に関しては第1実施形態と同様であるため、ここでは説明を省略する。
本発明は上記した実施形態に限定されるものではなく、特許請求の範囲に記載した範囲内において適宜変更が可能である。
21 基材
21a 基材の表面
22 金属薄膜
22a 金属薄膜の表面
22b 溝
22c 微細凹凸
3 ICチップ
4 モールド樹脂
5 ICチップ接続用部材
Claims (13)
- 導電性金属材料よりなる基材(21)の表面(21a)に金属薄膜(22)が設けられた金属部材(2)の表面加工方法であって、
前記金属薄膜は、Ni、Au、Pd、Agのうちの少なくとも一つを主成分とする材料で構成されており、
前記金属薄膜の表面(22a)に対して、エネルギー密度が100J/cm2以下であるパルス発振のレーザービームを、パルス幅を1μ秒以下として照射することにより前記金属薄膜の表面を溶融または蒸発させる溶融工程と、
前記溶融工程の後に、前記金属薄膜の表面を凝固させることで、前記金属薄膜の表面を粗面化する凝固工程と、を有することを特徴とする金属部材の表面加工方法。 - 前記金属薄膜の表面に対する法線の方向から見て前記金属薄膜の表面における直線上の異なる複数の位置に前記レーザービームの光源を配置して、前記金属薄膜の表面における前記直線上の複数の位置に前記レーザービームを照射することにより、前記金属薄膜の表面を粗面化することを特徴とする請求項1に記載の金属部材の表面加工方法。
- 前記金属薄膜の表面に対する法線の方向から見て前記金属薄膜の表面における前記直線上に沿って前記レーザービームの光源を移動させていくことにより、前記直線上の複数の位置に前記レーザービームを順に照射することを特徴とする請求項2に記載の金属部材の表面加工方法。
- 前記金属薄膜の表面における前記直線を複数とし、該複数の前記直線それぞれを互いに平行にすることを特徴とする請求項2または請求項3に記載の金属部材の表面加工方法。
- 前記基材と、前記基材の表面上に形成された前記金属薄膜と、を有する構成とされたリードフレーム(2)と、
前記金属薄膜の表面に搭載されたICチップ(3)と、
前記ICチップを被覆するように、かつ、前記金属薄膜の表面に接触するように設けられたモールド樹脂(4)と、を有する半導体装置の製造方法であって、
前記金属薄膜の表面のうち前記モールド樹脂と接触する部分を、請求項1ないし請求項4のいずれか一つに記載の金属部材の表面加工方法を用いて粗面化することを特徴とする半導体装置の製造方法。 - 導電性金属材料よりなる基材(21)と、前記基材の表面(21a)上に形成された金属薄膜(22)と、を有する構成とされたリードフレーム(2)と、
前記金属薄膜の表面(22a)に搭載されたICチップ(3)と、
前記ICチップを被覆するように、かつ、前記金属薄膜の表面に接触するように設けられたモールド樹脂(4)と、を有する半導体装置であって、
前記金属薄膜は、Ni、Au、Pd、Agのうちの少なくとも一つを主成分とする材料で構成されており、
前記金属薄膜の表面のうち前記モールド樹脂と接触する部分において、前記基材の表面に対する法線の方向から見て直線状に伸びるように形成された、幅が5〜300μmの溝(22b、22d)が設けられており、
前記溝の周囲には、凸部(22ca)が複数形成され、各前記凸部の平均高さが1〜500nm、各前記凸部の平均幅が1〜300nm、各前記凸部間の平均間隔が1〜300nmのサイズである微細凹凸(22c)が形成されていることを特徴とする半導体装置。 - 前記溝の内部において前記微細凹凸が形成されていることを特徴とする請求項6に記載の半導体装置。
- 前記微細凹凸が、前記金属薄膜の材料が酸化して形成された酸化物、もしくは、前記金属薄膜の材料と前記基材の材料との合金により構成されていることを特徴とする請求項6または請求項7に記載の半導体装置。
- 導電性金属材料よりなる基材(21)と、前記基材の表面(21a)上に形成された金属薄膜(22)と、を有する構成とされた金属部材(2)と、
前記金属薄膜の表面(22a)にはんだ(5)を介して接合させられた電子部品(3)と、を有する複合成形体であって、
前記金属薄膜は、Ni、Au、Pd、Agのうちの少なくとも一つを主成分とする材料で構成されており、
前記金属薄膜の表面のうち前記はんだが配置された領域の周囲における少なくとも一部において、レーザービームが照射されたことによって形成された、幅が5〜300μmの溝(22b、22d)が設けられると共に、前記溝の周囲には、複数の凸部(22ca)が形成され、前記複数の凸部の平均高さが1〜500nm、前記複数の平均幅が1〜300nm、前記複数の凸部間の平均間隔が1〜300nmのサイズである微細凹凸(22c)が形成されていることを特徴とする複合成形体。 - 前記金属薄膜の表面のうち前記はんだが配置された領域の周囲における全周に亘って、前記溝および前記微細凹凸が形成されていることを特徴とする請求項9に記載の複合成形体。
- 導電性金属材料よりなる基材(21)と、前記基材の表面(21a)上に形成された金属薄膜(22)と、を有する構成とされたリードフレーム(2)と、
前記金属薄膜の表面(22a)にはんだ(5)を介して接合させられたICチップ(3)と、
前記ICチップを被覆するように、かつ、前記金属薄膜の表面に接触するように設けられたモールド樹脂(4)と、を有する半導体装置であって、
前記金属薄膜は、Ni、Au、Pd、Agのうちの少なくとも一つを主成分とする材料で構成されており、
前記金属薄膜の表面のうち前記モールド樹脂と接触する部分および前記金属薄膜の表面のうち前記はんだが配置された領域の周囲における少なくとも一部において、レーザービームが照射されたことによって形成された、幅が5〜300μmの溝(22b、22d)が設けられると共に、前記溝の周囲には、複数の凸部(22ca)が形成され、前記複数の凸部の平均高さが1〜500nm、前記複数の凸部の平均幅が1〜300nm、前記複数の凸部間の平均間隔が1〜300nmのサイズである微細凹凸(22c)が形成されていることを特徴とする半導体装置。 - 前記金属薄膜の表面のうち前記はんだが配置された領域の周囲における全周に亘って、前記溝および前記微細凹凸が形成されていることを特徴とする請求項11に記載の半導体装置。
- 前記金属薄膜の表面における前記直線を複数とし、該複数の前記直線の各直線で構成される照射範囲が接して形成されるように前記レーザービームを照射していくことで前記溝を形成することを特徴とする請求項2または3に記載の金属部材の表面加工方法。
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JP7154529B2 (ja) | 2017-12-13 | 2022-10-18 | 株式会社デンソー | 金属部材および当該金属部材を用いた半導体素子、樹脂金属複合体、半導体装置、異種金属複合体並びに当該金属部材の製造方法 |
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EP3950211A1 (en) | 2020-08-03 | 2022-02-09 | Toyota Jidosha Kabushiki Kaisha | Metal member and manufacturing method for metal member |
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CN105722633B (zh) | 2017-08-15 |
WO2015087482A1 (ja) | 2015-06-18 |
US20160207148A1 (en) | 2016-07-21 |
JP5983700B2 (ja) | 2016-09-06 |
US9517532B2 (en) | 2016-12-13 |
CN105722633A (zh) | 2016-06-29 |
DE112014005600T5 (de) | 2016-09-08 |
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