JP2016005003A - 太陽電池の後処理装置 - Google Patents
太陽電池の後処理装置 Download PDFInfo
- Publication number
- JP2016005003A JP2016005003A JP2015122140A JP2015122140A JP2016005003A JP 2016005003 A JP2016005003 A JP 2016005003A JP 2015122140 A JP2015122140 A JP 2015122140A JP 2015122140 A JP2015122140 A JP 2015122140A JP 2016005003 A JP2016005003 A JP 2016005003A
- Authority
- JP
- Japan
- Prior art keywords
- solar cell
- region
- semiconductor substrate
- main
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000012805 post-processing Methods 0.000 title claims abstract description 119
- 239000004065 semiconductor Substances 0.000 claims abstract description 240
- 239000000758 substrate Substances 0.000 claims abstract description 226
- 238000010438 heat treatment Methods 0.000 claims abstract description 51
- 238000000034 method Methods 0.000 claims description 160
- 230000008569 process Effects 0.000 claims description 112
- 238000001816 cooling Methods 0.000 claims description 71
- 230000000630 rising effect Effects 0.000 claims description 64
- 230000001965 increasing effect Effects 0.000 claims description 22
- 238000005192 partition Methods 0.000 claims description 21
- 238000000638 solvent extraction Methods 0.000 claims description 2
- 238000012545 processing Methods 0.000 abstract description 49
- 229910052739 hydrogen Inorganic materials 0.000 description 137
- 239000001257 hydrogen Substances 0.000 description 137
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 101
- 238000002161 passivation Methods 0.000 description 79
- 239000010410 layer Substances 0.000 description 72
- 150000002431 hydrogen Chemical class 0.000 description 37
- 239000002019 doping agent Substances 0.000 description 36
- 238000004519 manufacturing process Methods 0.000 description 36
- 239000000463 material Substances 0.000 description 32
- 238000010304 firing Methods 0.000 description 31
- 238000009792 diffusion process Methods 0.000 description 30
- 238000012986 modification Methods 0.000 description 24
- 230000004048 modification Effects 0.000 description 24
- 239000013078 crystal Substances 0.000 description 22
- 230000000694 effects Effects 0.000 description 22
- 230000002829 reductive effect Effects 0.000 description 19
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 17
- 229910052796 boron Inorganic materials 0.000 description 17
- 238000006243 chemical reaction Methods 0.000 description 13
- 239000000126 substance Substances 0.000 description 11
- 239000000969 carrier Substances 0.000 description 10
- 238000010586 diagram Methods 0.000 description 10
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- 230000007423 decrease Effects 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 230000007547 defect Effects 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 239000011810 insulating material Substances 0.000 description 5
- 230000005855 radiation Effects 0.000 description 5
- 230000006798 recombination Effects 0.000 description 5
- 238000005215 recombination Methods 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 230000014509 gene expression Effects 0.000 description 4
- 229910052736 halogen Inorganic materials 0.000 description 4
- 150000002367 halogens Chemical class 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 229910052738 indium Inorganic materials 0.000 description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 229910052787 antimony Inorganic materials 0.000 description 3
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 3
- 229910052797 bismuth Inorganic materials 0.000 description 3
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 229910021478 group 5 element Inorganic materials 0.000 description 3
- 230000002452 interceptive effect Effects 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- -1 ITO Chemical compound 0.000 description 2
- 229910004012 SiCx Inorganic materials 0.000 description 2
- 229910004205 SiNX Inorganic materials 0.000 description 2
- 229910020286 SiOxNy Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000010924 continuous production Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 230000020169 heat generation Effects 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 230000000670 limiting effect Effects 0.000 description 2
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 230000005641 tunneling Effects 0.000 description 2
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 239000002041 carbon nanotube Substances 0.000 description 1
- 229910021393 carbon nanotube Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000003245 coal Substances 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/024—Arrangements for cooling, heating, ventilating or temperature compensation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/6776—Continuous loading and unloading into and out of a processing chamber, e.g. transporting belts within processing chambers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1864—Annealing
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/0033—Heating devices using lamps
- H05B3/0038—Heating devices using lamps for industrial applications
- H05B3/0047—Heating devices using lamps for industrial applications for semiconductor manufacture
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Photovoltaic Devices (AREA)
Abstract
【解決手段】太陽電池の後処理装置200は、半導体基板を含む太陽電池100に光を提供しながら熱処理する太陽電池の後処理装置であって、処理装置のメイン領域220は、半導体基板に熱を提供する第1熱源部224と、半導体基板に光を提供する光源部222とを有し、光源部222は、プラズマライティングシステム(plasma lighting system、PLS)で構成される光源を含む。
【選択図】図12
Description
Claims (20)
- 半導体基板を含む太陽電池に光を提供しながら熱処理するメイン区間を含む後処理ステップを行う太陽電池の後処理装置であって、
前記メイン区間を行うメイン領域を含み、
前記メイン領域に、前記半導体基板に熱を提供する第1熱源部と、前記半導体基板に光を提供する光源部とが位置し、
前記光源部が、プラズマライティングシステム(plasma lighting system:PLS)で構成される光源を含む、太陽電池の後処理装置。 - 前記光源によって前記半導体基板に提供される光の波長範囲が600nm〜1000nmである、請求項1に記載の太陽電池の後処理装置。
- 前記光源において、光が放出される面に位置したカバー基板は、ベース基板と、前記ベース基板上に位置し、屈折率が異なる酸化物を含む複数の層とを含む、請求項1に記載の太陽電池の後処理装置。
- 前記光源部と前記第1熱源部とが、互いに離れた位置で前記半導体基板に光及び熱を提供する、請求項1に記載の太陽電池の後処理装置。
- 前記メイン区間の前に行われ、前記半導体基板を予熱する昇温区間を行う昇温領域を含み、
前記昇温領域に、前記半導体基板を予熱する第2熱源部が位置する、請求項1に記載の太陽電池の後処理装置。 - 前記昇温領域の入口部分に位置し、前記第2熱源部と反対の側に位置する追加熱源部をさらに含む、請求項5に記載の太陽電池の後処理装置。
- 前記メイン区間の後に行われ、前記半導体基板を冷却する冷却区間を行う冷却領域を含む、請求項1に記載の太陽電池の後処理装置。
- 前記メイン区間の前に行われ、前記半導体基板を予熱する昇温区間を行う昇温領域と、
前記メイン区間の後に行われる冷却区間を行う冷却領域と、
前記太陽電池が載せられ、前記昇温領域、前記メイン領域及び前記冷却領域を通過するコンベヤベルトと、
を含み、
前記昇温区間、前記メイン区間及び前記冷却区間がインライン(in−line)工程によって行われる、請求項1に記載の太陽電池の後処理装置。 - 前記昇温領域と前記メイン領域との間、そして、前記メイン領域と前記冷却領域との間のうちの少なくとも1つに、これらを区画する隔壁部が位置する、請求項8に記載の太陽電池の後処理装置。
- 前記昇温領域及び前記冷却領域のうちの少なくとも1つは、前記メイン領域に隣接して位置する追加光源をさらに含む、請求項8に記載の太陽電池の後処理装置。
- 前記昇温領域の入口部分、前記昇温領域と前記メイン領域との間、前記メイン領域と前記冷却領域との間、そして、冷却領域の出口部分のうちの少なくとも1つに位置するエアカーテン部材をさらに含む、請求項8に記載の太陽電池の後処理装置。
- 前記メイン区間の前に行われ、前記半導体基板を予熱する昇温区間を行う昇温領域と、
前記メイン区間の後に行われる冷却区間を行う冷却領域と、
を含み、
前記昇温領域、前記メイン領域及び前記冷却領域は、バッチ(batch)構造を有して、前記太陽電池が静止した状態で工程が行われる、請求項1に記載の太陽電池の後処理装置。 - 前記太陽電池は、コンベヤベルトまたは作業台上に載せられ、
前記コンベヤベルトまたは作業台がメッシュ構造を有する、請求項1に記載の太陽電池の後処理装置。 - 半導体基板を含む太陽電池に光を提供しながら熱処理するメイン区間を含む後処理ステップを行う太陽電池の後処理装置であって、
前記メイン区間を行うメイン領域を含み、
前記メイン領域に、前記半導体基板に熱を提供する第1熱源部と、前記半導体基板に光を提供する光源部とが位置し、
前記光源部と前記第1熱源部とが、互いに離れた位置で前記半導体基板に光及び熱を提供する、太陽電池の後処理装置。 - 前記光源部が前記光源を複数個備え、
前記第1熱源部が前記熱源を複数個備え、
前記複数個の光源が互いに隣接して位置し、
前記複数個の熱源が互いに隣接して位置し、
前記複数個の光源と前記複数個の熱源とが互いに離隔して位置する、請求項15に記載の太陽電池の後処理装置。 - 前記光源部が前記半導体基板の一側に位置し、
前記第1熱源部が前記半導体基板の他側に位置する、請求項15に記載の太陽電池の後処理装置。 - 前記光源部が前記半導体基板の上側に位置し、
前記第1熱源部が前記太陽電池の下側に位置する、請求項17に記載の太陽電池の後処理装置。 - 半導体基板を含む太陽電池に光を提供しながら熱処理するメイン区間を含む後処理ステップを行う太陽電池の後処理装置であって、
前記メイン区間を行うメイン領域と、
前記メイン区間の前に行われ、前記半導体基板を予熱する昇温区間を行う昇温領域と、
前記メイン区間の後に行われ、前記半導体基板を冷却する冷却区間を行う冷却領域と、
を含み、
前記メイン領域に、前記半導体基板に熱を提供する第1熱源部と、前記半導体基板に光を提供する光源部とが位置し、
前記昇温領域に、前記半導体基板を予熱する第2熱源部が位置する、太陽電池の後処理装置。 - 前記昇温区間、前記メイン区間及び前記冷却区間がインライン(in−line)工程によって行われるか、または、
前記昇温領域、前記メイン領域及び前記冷却領域のうちの少なくとも1つがバッチ(batch)構造を有する、請求項19に記載の太陽電池の後処理装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020140073575A KR20150144585A (ko) | 2014-06-17 | 2014-06-17 | 태양 전지의 후처리 장치 |
KR10-2014-0073575 | 2014-06-17 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2016005003A true JP2016005003A (ja) | 2016-01-12 |
JP6139600B2 JP6139600B2 (ja) | 2017-05-31 |
Family
ID=53432932
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015122140A Active JP6139600B2 (ja) | 2014-06-17 | 2015-06-17 | 太陽電池の後処理装置 |
Country Status (5)
Country | Link |
---|---|
US (2) | US10109511B2 (ja) |
EP (1) | EP2958153B1 (ja) |
JP (1) | JP6139600B2 (ja) |
KR (1) | KR20150144585A (ja) |
CN (1) | CN105185865B (ja) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016028418A (ja) * | 2014-07-03 | 2016-02-25 | 中美▲せき▼晶製品股▲ふん▼有限公司 | 光起電装置の光誘起劣化を抑止するための方法および装置 |
WO2017163498A1 (ja) * | 2016-03-23 | 2017-09-28 | 三菱電機株式会社 | 太陽電池、および、太陽電池の製造方法 |
JP2017208519A (ja) * | 2016-05-16 | 2017-11-24 | ▲ゆ▼晶能源科技股▲分▼有限公司Gintech Energy Corporation | 太陽電池水素化方法及びその装置 |
JP2018057263A (ja) * | 2016-05-16 | 2018-04-05 | ▲ゆ▼晶能源科技股▲分▼有限公司Gintech Energy Corporation | ポータブル型太陽電池モジュール効率回復装置 |
JP2020509600A (ja) * | 2017-03-03 | 2020-03-26 | 広東愛旭科技股▲フン▼有限公司 | P型perc両面太陽電池及びそのモジュール、システムと製造方法 |
JP2020509601A (ja) * | 2017-03-03 | 2020-03-26 | 広東愛旭科技股▲フン▼有限公司 | P型perc両面太陽電池及びそのモジュール、システムと製造方法 |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9780252B2 (en) * | 2014-10-17 | 2017-10-03 | Tp Solar, Inc. | Method and apparatus for reduction of solar cell LID |
US10443941B2 (en) * | 2015-05-20 | 2019-10-15 | Illinois Tool Works Inc. | Light annealing in a cooling chamber of a firing furnace |
KR102591880B1 (ko) * | 2015-12-18 | 2023-10-24 | 상라오 징코 솔라 테크놀러지 디벨롭먼트 컴퍼니, 리미티드 | 태양 전지의 제조 방법 |
US9947825B2 (en) * | 2015-12-18 | 2018-04-17 | Lg Electronics Inc. | Method of manufacturing solar cell |
KR101821394B1 (ko) * | 2016-01-14 | 2018-01-23 | 엘지전자 주식회사 | 태양전지 |
CN108604619A (zh) * | 2016-02-22 | 2018-09-28 | 应用材料意大利有限公司 | 用于处理太阳能电池基板的设备、用于处理太阳能电池基板的系统和用于处理太阳能电池基板的方法 |
KR101912772B1 (ko) * | 2016-12-26 | 2019-01-14 | 주식회사 한화 | 광기전력 소자 제조 장치 및 제조 방법 |
TW202023063A (zh) * | 2018-10-24 | 2020-06-16 | 澳洲商新南創新私人有限公司 | 改良異質接面太陽能電池的效能的方法 |
DE102019111061A1 (de) * | 2019-04-29 | 2020-10-29 | Meyer Burger (Germany) Gmbh | Herstellungsverfahren von Silizium-Heterojunction-Solarzellen mit Stabilisierungsschritt und Fertigungslinienabschnitt für den Stabilisierungsschritt |
KR20230038183A (ko) | 2020-07-10 | 2023-03-17 | 아데어 파마슈티컬스 인코포레이티드 | 팽윤성 경구 제약 조성물 |
DE102021004175B3 (de) * | 2021-08-13 | 2022-12-01 | Singulus Technologies Aktiengesellschaft | Abstandsvorrichtung für Heizsystem zum Aufheizen von großflächigen Substraten, Heizsystem und Aufheizverfahren |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006185974A (ja) * | 2004-12-27 | 2006-07-13 | Kyocera Corp | 焼成炉、及びこれを用いた被処理体の焼成方法、並びに太陽電池素子の製造方法 |
US20070069659A1 (en) * | 2005-09-23 | 2007-03-29 | Lg Electronics Inc. | High temperature operation type electrodeless bulb of plasma lighting systems and plasma lighting system having the same |
JP2013530514A (ja) * | 2010-04-26 | 2013-07-25 | 株式会社テラセミコン | インライン基板処理装置 |
WO2013173867A1 (en) * | 2012-05-21 | 2013-11-28 | Newsouth Innovations Pty Limited | Advanced hydrogenation of silicon solar cells |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5750427A (en) * | 1980-09-12 | 1982-03-24 | Ushio Inc | Annealing device and annealing method |
US20010031229A1 (en) * | 1998-10-20 | 2001-10-18 | Spjut Reed E. | UV-enhanced, in-line, infrared phosphorous diffusion furnace |
KR100613674B1 (ko) | 1999-05-14 | 2006-08-21 | 동경 엘렉트론 주식회사 | 웨이퍼 처리 장치 및 처리 방법 |
US6594446B2 (en) * | 2000-12-04 | 2003-07-15 | Vortek Industries Ltd. | Heat-treating methods and systems |
KR100492606B1 (ko) | 2002-12-30 | 2005-06-03 | 엘지전자 주식회사 | 무전극 조명기기의 배광 장치 |
US7220936B2 (en) | 2004-07-30 | 2007-05-22 | Ut-Battelle, Llc | Pulse thermal processing of functional materials using directed plasma arc |
US7102141B2 (en) | 2004-09-28 | 2006-09-05 | Intel Corporation | Flash lamp annealing apparatus to generate electromagnetic radiation having selective wavelengths |
WO2006128247A1 (en) * | 2005-06-03 | 2006-12-07 | Csg Solar Ag | Method and apparatus for hydrogenation of thin film silicon on glass |
DE102006047472A1 (de) * | 2006-10-05 | 2008-04-10 | Fhr Anlagenbau Gmbh | Verfahren und Vorrichtung zur oberflächennahen Behandlung von flächigen Substraten |
US8410712B2 (en) * | 2008-07-09 | 2013-04-02 | Ncc Nano, Llc | Method and apparatus for curing thin films on low-temperature substrates at high speeds |
KR101002661B1 (ko) * | 2008-08-12 | 2010-12-20 | 삼성모바일디스플레이주식회사 | 인라인 열처리 설비 및 이를 사용한 기판 열처리 방법 |
KR101055037B1 (ko) | 2010-01-18 | 2011-08-05 | 엘지이노텍 주식회사 | 라이트 유닛 및 이를 구비한 디스플레이 장치 |
US8907258B2 (en) | 2010-04-08 | 2014-12-09 | Ncc Nano, Llc | Apparatus for providing transient thermal profile processing on a moving substrate |
KR101137700B1 (ko) | 2010-09-01 | 2012-04-25 | 주성엔지니어링(주) | 박막형 태양전지의 제조 장치 및 제조 방법 |
TWI435391B (zh) | 2010-09-16 | 2014-04-21 | Dainippon Screen Mfg | 閃光熱處理裝置 |
US20130189635A1 (en) * | 2012-01-25 | 2013-07-25 | First Solar, Inc. | Method and apparatus providing separate modules for processing a substrate |
US20130257270A1 (en) * | 2012-04-03 | 2013-10-03 | Nanometrics Incorporated | Plasma lamp ignition source |
KR101335161B1 (ko) | 2012-06-18 | 2013-11-29 | (주)원우시스템즈 | 개량된 태양전지 품질 측정 방법 및 장치 |
CN202808935U (zh) | 2012-09-21 | 2013-03-20 | 蚌埠玻璃工业设计研究院 | 一种改善非晶硅薄膜光致衰退效应的装置 |
US20140213016A1 (en) * | 2013-01-30 | 2014-07-31 | Applied Materials, Inc. | In situ silicon surface pre-clean for high performance passivation of silicon solar cells |
-
2014
- 2014-06-17 KR KR1020140073575A patent/KR20150144585A/ko active Application Filing
-
2015
- 2015-06-16 US US14/741,286 patent/US10109511B2/en active Active
- 2015-06-16 EP EP15001779.6A patent/EP2958153B1/en active Active
- 2015-06-17 JP JP2015122140A patent/JP6139600B2/ja active Active
- 2015-06-17 CN CN201510481460.5A patent/CN105185865B/zh active Active
-
2018
- 2018-09-28 US US16/146,958 patent/US20190035655A1/en not_active Abandoned
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006185974A (ja) * | 2004-12-27 | 2006-07-13 | Kyocera Corp | 焼成炉、及びこれを用いた被処理体の焼成方法、並びに太陽電池素子の製造方法 |
US20070069659A1 (en) * | 2005-09-23 | 2007-03-29 | Lg Electronics Inc. | High temperature operation type electrodeless bulb of plasma lighting systems and plasma lighting system having the same |
JP2013530514A (ja) * | 2010-04-26 | 2013-07-25 | 株式会社テラセミコン | インライン基板処理装置 |
WO2013173867A1 (en) * | 2012-05-21 | 2013-11-28 | Newsouth Innovations Pty Limited | Advanced hydrogenation of silicon solar cells |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016028418A (ja) * | 2014-07-03 | 2016-02-25 | 中美▲せき▼晶製品股▲ふん▼有限公司 | 光起電装置の光誘起劣化を抑止するための方法および装置 |
WO2017163498A1 (ja) * | 2016-03-23 | 2017-09-28 | 三菱電機株式会社 | 太陽電池、および、太陽電池の製造方法 |
JP6257847B1 (ja) * | 2016-03-23 | 2018-01-10 | 三菱電機株式会社 | 太陽電池の製造方法 |
JP2017208519A (ja) * | 2016-05-16 | 2017-11-24 | ▲ゆ▼晶能源科技股▲分▼有限公司Gintech Energy Corporation | 太陽電池水素化方法及びその装置 |
JP2018057263A (ja) * | 2016-05-16 | 2018-04-05 | ▲ゆ▼晶能源科技股▲分▼有限公司Gintech Energy Corporation | ポータブル型太陽電池モジュール効率回復装置 |
JP2020509600A (ja) * | 2017-03-03 | 2020-03-26 | 広東愛旭科技股▲フン▼有限公司 | P型perc両面太陽電池及びそのモジュール、システムと製造方法 |
JP2020509601A (ja) * | 2017-03-03 | 2020-03-26 | 広東愛旭科技股▲フン▼有限公司 | P型perc両面太陽電池及びそのモジュール、システムと製造方法 |
JP7023975B2 (ja) | 2017-03-03 | 2022-02-22 | 広東愛旭科技有限公司 | P型perc両面太陽電池及びそのモジュール、システムと製造方法 |
JP7023974B2 (ja) | 2017-03-03 | 2022-02-22 | 広東愛旭科技有限公司 | P型perc両面太陽電池及びそのモジュール、システムと製造方法 |
Also Published As
Publication number | Publication date |
---|---|
JP6139600B2 (ja) | 2017-05-31 |
EP2958153B1 (en) | 2019-08-07 |
EP2958153A1 (en) | 2015-12-23 |
US20190035655A1 (en) | 2019-01-31 |
CN105185865A (zh) | 2015-12-23 |
US20150364351A1 (en) | 2015-12-17 |
CN105185865B (zh) | 2017-06-23 |
KR20150144585A (ko) | 2015-12-28 |
US10109511B2 (en) | 2018-10-23 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6139600B2 (ja) | 太陽電池の後処理装置 | |
US10249776B2 (en) | Heterojunction solar cell and manufacturing method thereof | |
JP6219886B2 (ja) | 太陽電池の製造方法 | |
TWI595673B (zh) | 用以減少太陽能電池的光致衰退的方法及設備 | |
US10461213B2 (en) | Method of manufacturing solar cell | |
KR102323753B1 (ko) | 광 소결 장치 | |
KR20090078275A (ko) | 요철 형태의 절연막을 포함하는 태양전지 및 그 제조방법 | |
KR101864275B1 (ko) | 태양 전지의 후처리 장치 | |
KR102591880B1 (ko) | 태양 전지의 제조 방법 | |
TWI631717B (zh) | High photoelectric conversion efficiency solar cell manufacturing method and high photoelectric conversion efficiency solar cell | |
JP3255903B2 (ja) | 堆積膜形成方法および堆積膜形成装置 | |
JP2002289553A (ja) | 薄膜半導体素子の製造方法 | |
TW202335313A (zh) | 太陽能電池的處理及製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20160420 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20160510 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20160810 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20161107 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20170328 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20170427 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6139600 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
S533 | Written request for registration of change of name |
Free format text: JAPANESE INTERMEDIATE CODE: R313533 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |