JP2016028418A - 光起電装置の光誘起劣化を抑止するための方法および装置 - Google Patents
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Abstract
Description
通常の光起電装置およびさらに高効率光起電装置の光誘起劣化もより効果的に抑止することが有用である、方法を提供することである。
光起電装置2は、光源12から発せられ、かつ300nm以上の波長を有する光を用いて周囲光の不在下で光起電装置2を加熱する照明処理にかけられる。
光起電装置2の温度は、光起電装置2のアニーリング温度を上回り、かつ好ましくは600℃を下回って少なくとも0.5分間維持される。照明される光起電装置2が、ホウ素をドープした酸素含有シリコン基板であるとき、光起電装置2の温度は、230℃を上回って、好ましくは600℃を下回って、より好ましくは230℃から577℃で維持される。光起電装置2の温度が577℃より高いとき、光起電装置2は、ひどく損傷される。
光起電装置2の温度は、ステップb)が実行されるとき、センサを用いて検出される。センサによって検出された光起電装置2の温度が、230℃から577℃の範囲外に降下するとき、維持するステップ(すなわち、ステップb))は、熱調節によって補助される。詳細には、センサによって検出された光起電装置2の温度が、230℃より低いとき、熱調節は、熱加熱によって実施される。センサによって検出された光起電装置2の温度が、577℃より高いとき、熱調節は、冷却によって実施される。
Claims (17)
- 光起電装置(2)の光誘起劣化を抑止するための方法であって、
a)前記光起電装置(2)を、300nm以上の波長を有する光を使用して周囲光の不在下で前記光起電装置(2)を加熱する照明処理にかけるステップと、
b) 前記光起電装置(2)の温度を、前記光起電装置(2)のアニール温度を上回って少なくとも0.5分間維持するステップとを有することを特徴とする、方法。 - 前記光起電装置(2)の温度が、600℃を下回って維持されることを特徴とする、請求項1に記載の方法。
- 前記維持するステップが、熱調節によって補助されることを特徴とする、請求項2の記載の方法。
- 前記熱調節が、熱加熱、冷却、またはそれらの組み合わせによって実施されることを特徴とする、請求項3に記載の方法。
- さらに、前記ステップ(b)が実行されるとき、センサ(14)を用いて前記光起電装置(2)の温度を検出することを特徴とする、請求項1に記載の方法。
- 前記光起電装置(2)が、ホウ素をドープした酸素含有シリコン基板であり、前記アニーリング温度が、230℃であることを特徴とする、請求項1に記載の方法。
- 前記光起電装置(2)の温度が、230℃から577℃までの範囲内で維持されることを特徴とする、請求項6に記載の方法。
- 前記照明処理用の光が、450nmから1000nmの範囲の波長を有することを特徴とする、請求項6に記載の方法。
- 前記光起電装置(2)が、少なくとも0.5サンの光強度を有する光照明された表面(20)を含むことを特徴とする、請求項1に記載の方法。
- 前記光強度が、0.9サンから5サンの範囲であることを特徴とする、請求項9に記載の方法。
- 前記照明処理用の光が、赤外線ランプ、ハロゲンランプ、半導体発光装置、有機発光装置またはそれらの組み合わせから発せられることを特徴とする、請求項1に記載の方法。
- 前記光起電装置(2)が、ホウ素をドープした酸素含有シリコン基板、またはホウ素−ガリウムをドープした酸素含有シリコン基板であることを特徴とする、請求項1に記載の方法。
- 光起電装置(2)の光誘起劣化を抑止するための装置(1)であって、
長手方向に沿って延びる天井壁(101)と、前記天井壁(101)から離間された基部壁(102)と、前記天井壁(101)と前記基部壁(102)との間に配設された周囲壁(103)とを有して室(104)を画定する、ハウジング(10)であって、前記周囲壁(103)が、入口ポート(105)と、前記長手方向に前記入口ポート(105)の反対側の出口ポート(106)とを有する、ハウジング(10)と、
前記天井壁(101)上に装着され、照明光のビームを下方向に発するように構成された光源(12)と、
前記光起電装置(2)を運ぶための搬送セグメント(11’)を有する搬送装置(11)であって、前記搬送セグメント(11’)が、前記光起電装置(2)が前記照明光のビームによって照明されることを可能にするために、前記入口ポート(105)から前記出口ポート(106)まで通り、前記基部壁(102)に対して平行にかつ近位にある走行ルートに沿って延びるように構成される、搬送装置(11)と、
前記室(104)内に装着されて、前記光起電装置(2)の温度を検出する温度センサ(14)と、
前記光起電装置(2)の温度を調節するための熱調節装置(15)と、
前記光源(12)によって発せられた光および前記熱調節装置(15)を、前記温度センサ(14)によって検出された温度に基づいて制御するように構成された制御装置(18)とを有すること特徴とする、装置(1)。 - 前記光源(12)が、赤外線ランプ、ハロゲンランプ、半導体発光装置、有機発光装置またはそれらの組み合わせを含むことを特徴とする、請求項13に記載の装置(1)。
- 前記熱調節装置(15)が、冷却装置(16)を含むことを特徴とする、請求項13に記載の装置(1)。
- 前記熱調節装置(15)が、熱加熱装置(19)を含むことを特徴とする、請求項13に記載の装置(1)。
- 前記熱調節装置(15)が、さらに、熱加熱装置(19)を含むことを特徴とする、請求項15に記載の装置(1)。
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JPH02168616A (ja) * | 1988-09-30 | 1990-06-28 | Kanegafuchi Chem Ind Co Ltd | 薄膜非晶質半導体装置 |
US20100243036A1 (en) * | 2006-03-21 | 2010-09-30 | Universitat Konstanz | Method for Fabricating a Photovolataic Element with Stabilised Efficiency |
WO2014041261A1 (fr) * | 2012-09-14 | 2014-03-20 | Commissariat A L'energie Atomique Et Aux Energies Alternatives (C.E.A.) | Dispositif et procédé de restauration des cellules solaires à base de silicium avec transducteur ultrason |
WO2014041260A1 (fr) * | 2012-09-14 | 2014-03-20 | Commissariat à l'Energie Atomique et aux Energies Alternatives | Dispositif et procede de restauration de cellules solaires photo voltaiques a base de silicium |
JP2016005003A (ja) * | 2014-06-17 | 2016-01-12 | エルジー エレクトロニクス インコーポレイティド | 太陽電池の後処理装置 |
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CN102460698A (zh) * | 2009-06-05 | 2012-05-16 | 欧瑞康太阳能股份公司(特吕巴赫) | 用于制造薄膜光伏转换器设备的方法 |
US9634165B2 (en) * | 2009-11-02 | 2017-04-25 | International Business Machines Corporation | Regeneration method for restoring photovoltaic cell efficiency |
CN105340085B (zh) * | 2013-06-26 | 2018-07-06 | 康斯坦茨大学 | 用于生产具有稳定效率的光伏元件的方法和设备 |
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2015
- 2015-07-01 US US14/789,637 patent/US20160005915A1/en not_active Abandoned
- 2015-07-02 EP EP15175125.2A patent/EP2963692A1/en not_active Withdrawn
- 2015-07-02 MY MYPI2015702170A patent/MY176344A/en unknown
- 2015-07-02 CN CN201510381615.8A patent/CN105322054B/zh not_active Expired - Fee Related
- 2015-07-02 SG SG10201505276XA patent/SG10201505276XA/en unknown
- 2015-07-02 JP JP2015133702A patent/JP2016028418A/ja active Pending
- 2015-07-02 KR KR1020150094603A patent/KR20160004951A/ko active Search and Examination
Patent Citations (5)
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JPH02168616A (ja) * | 1988-09-30 | 1990-06-28 | Kanegafuchi Chem Ind Co Ltd | 薄膜非晶質半導体装置 |
US20100243036A1 (en) * | 2006-03-21 | 2010-09-30 | Universitat Konstanz | Method for Fabricating a Photovolataic Element with Stabilised Efficiency |
WO2014041261A1 (fr) * | 2012-09-14 | 2014-03-20 | Commissariat A L'energie Atomique Et Aux Energies Alternatives (C.E.A.) | Dispositif et procédé de restauration des cellules solaires à base de silicium avec transducteur ultrason |
WO2014041260A1 (fr) * | 2012-09-14 | 2014-03-20 | Commissariat à l'Energie Atomique et aux Energies Alternatives | Dispositif et procede de restauration de cellules solaires photo voltaiques a base de silicium |
JP2016005003A (ja) * | 2014-06-17 | 2016-01-12 | エルジー エレクトロニクス インコーポレイティド | 太陽電池の後処理装置 |
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Publication number | Priority date | Publication date | Assignee | Title |
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JP2017208519A (ja) * | 2016-05-16 | 2017-11-24 | ▲ゆ▼晶能源科技股▲分▼有限公司Gintech Energy Corporation | 太陽電池水素化方法及びその装置 |
JP2020509602A (ja) * | 2017-03-03 | 2020-03-26 | 広東愛旭科技股▲フン▼有限公司 | P型perc両面太陽電池、並びにそのモジュール、システムおよび製造方法 |
JP7023976B2 (ja) | 2017-03-03 | 2022-02-22 | 広東愛旭科技有限公司 | P型perc両面太陽電池の製造方法 |
Also Published As
Publication number | Publication date |
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EP2963692A1 (en) | 2016-01-06 |
US20160005915A1 (en) | 2016-01-07 |
MY176344A (en) | 2020-07-29 |
CN105322054B (zh) | 2017-05-24 |
KR20160004951A (ko) | 2016-01-13 |
SG10201505276XA (en) | 2016-02-26 |
CN105322054A (zh) | 2016-02-10 |
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