JP2015535142A - エピタキシャル成長用サセプタ及びエピタキシャル成長装置 - Google Patents
エピタキシャル成長用サセプタ及びエピタキシャル成長装置 Download PDFInfo
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- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
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- C—CHEMISTRY; METALLURGY
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
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- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
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- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
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- C30B25/165—Controlling or regulating the flow of the reactive gases
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- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
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Abstract
Description
比較例1は、図4においてサセプタのポケットの高さHがウェハ結晶の各方向で全て一定に形成されている場合であり、ウェハに対するエピ層の蒸着工程を行った後、ウェハエッジ部に対するエピ層の厚さを測定したものである。
図6は、比較例2に従ってサセプタにガス調節部材が形成される領域を示した平面図である。
実施例は、第1ガス調節部材が形成されるHigher領域と第2ガス調節部材が形成されるLower領域を第3ガス調節部材が形成されるBuffer領域を基準に非対称的に形成する方法について説明する。
Claims (13)
- チャンバー内でウェハとソースガスとを反応させてエピタキシャル層を成長させたエピタキシャルウェハを製造するためのサセプタであって、
前記ウェハが配置される開口部が形成されたポケットと、
前記ウェハが支持されるレッジ部と、
前記サセプタの開口部上面の外周部に形成されるガス調節部材と、を含み、
前記ガス調節部材は、
前記ウェハの<110>結晶方向に対向する所定の領域に形成される第1ガス調節部材と、
前記ウェハの<100>結晶方向に対向する所定の領域に形成される第2ガス調節部材と、
前記第1ガス調節部材と前記第2ガス調節部材との間に形成される第3ガス調節部材と、を含み、
前記第1ガス調節部材と前記第2ガス調節部材及び前記第3ガス調節部材は、前記ウェハの円周に沿って形成される領域の大きさが互いに異なるように形成され、
前記第1、第2及び第3ガス調節部材は、ガスの流量を変化させるために、ウェハの中心方向からサセプタ方向への傾斜度が互いに異なるように形成されることを特徴とする、エピタキシャル成長用サセプタ。 - 前記第1ガス調節部材及び前記第2ガス調節部材は、前記第3ガス調節部材を中心にその領域の大きさがそれぞれ非対称的に形成されることを特徴とする、請求項1に記載のエピタキシャル成長用サセプタ。
- 前記第1ガス調節部材は、ウェハエッジ部のエピ層の厚さが相対的に厚く蒸着される領域に形成され、ウェハの<110>結晶方向を中心に0〜5度を有するようにサセプタ上に形成されることを特徴とする、請求項1に記載のエピタキシャル成長用サセプタ。
- 前記第3ガス調節部材は、ウェハエッジ部のエピ層の厚さが増加または減少する領域に形成され、前記第1ガス調節部材の両側に2.5〜17.5度の範囲で形成されることを特徴とする、請求項1に記載のエピタキシャル成長用サセプタ。
- 第2ガス調節部材は、ウェハエッジ部のエピ層の厚さが相対的に薄く蒸着される領域に形成され、ウェハの<110>結晶方向を中心に55〜80度を有するようにサセプタ上に形成されることを特徴とする、請求項1に記載のエピタキシャル成長用サセプタ。
- 前記第1、第2及び第3ガス調節部材は、ガスの流量を変化させるために、サセプタ上で互いに異なる高さで形成されることを特徴とする、請求項1に記載のエピタキシャル成長用サセプタ。
- 前記第1及び第2ガス調節部材は、ウェハの結晶方向に応じて90度を周期に前記サセプタ上に形成されることを特徴とする、請求項1に記載のエピタキシャル成長用サセプタ。
- 前記第1ガス調節部材は、ガスの流量を減少させるために所定の厚さを有するシリコン蒸着膜であり、前記第2ガス調節部材は、ガスの流量を増加させるために所定の厚さを有するシリコン蒸着膜であることを特徴とする、請求項1に記載のエピタキシャル成長用サセプタ。
- 前記第1ガス調節部材は、ガスの流量を減少させるために、ウェハの中心方向からサセプタ方向に傾斜した形状の構造物であることを特徴とする、請求項1に記載のエピタキシャル成長用サセプタ。
- 前記第2ガス調節部材は、ガスの流量を増加させるために、サセプタ方向からウェハの中心方向に傾斜した形状の構造物であることを特徴とする、請求項1に記載のエピタキシャル成長用サセプタ。
- 前記第1ガス調節部材及び第2ガス調節部材は、ガスの流量を減少させるために、ウェハの中心方向からサセプタ方向に傾斜した形状の構造物であり、第1ガス調節部材の傾斜度は第2ガス調節部材の傾斜度よりも大きいことを特徴とする、請求項1に記載のエピタキシャル成長用サセプタ。
- チャンバー内でウェハとソースガスとを反応させてエピタキシャル層を成長させたエピタキシャルウェハを製造するためのサセプタであって、
前記ウェハが配置される開口部が形成されたポケットと、
前記ウェハが支持されるレッジ部と、
前記サセプタの開口部上面の外周部に形成されるガス調節部材と、を含み、
前記ガス調節部材は、
前記ウェハの<110>結晶方向に対向する所定の領域に形成される第1ガス調節部材と、
前記ウェハの<100>結晶方向に対向する所定の領域に第2ガス調節部材と、
前記第1ガス調節部材と前記第2ガス調節部材との間に形成される第3ガス調節部材と、を含み、
前記第1ガス調節部材と前記第2ガス調節部材及び前記第3ガス調節部材は、前記ウェハの円周に沿って形成される領域の大きさが互いに異なるように形成されることを特徴とする、エピタキシャル成長用サセプタ。 - 請求項1乃至12のいずれか一項に記載のエピタキシャル成長用サセプタを含むことを特徴とする、エピタキシャル成長装置。
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KR10-2012-0114743 | 2012-10-16 | ||
KR20120114743 | 2012-10-16 | ||
KR20130121572A KR101496572B1 (ko) | 2012-10-16 | 2013-10-11 | 에피택셜 성장용 서셉터 및 에피택셜 성장방법 |
KR10-2013-0121572 | 2013-10-11 | ||
PCT/KR2013/009261 WO2014062002A1 (ko) | 2012-10-16 | 2013-10-16 | 에피택셜 성장용 서셉터 및 에피택셜 성장방법 |
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Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6256576B1 (ja) * | 2016-11-17 | 2018-01-10 | 株式会社Sumco | エピタキシャルウェーハ及びその製造方法 |
JP2018060929A (ja) * | 2016-10-06 | 2018-04-12 | クアーズテック株式会社 | サセプタ |
WO2019043865A1 (ja) * | 2017-08-31 | 2019-03-07 | 株式会社Sumco | サセプタ、エピタキシャル成長装置、エピタキシャルシリコンウェーハの製造方法、ならびにエピタキシャルシリコンウェーハ |
JP2019102635A (ja) * | 2017-12-01 | 2019-06-24 | 株式会社Sumco | 半導体ウェーハの載置位置測定方法および半導体エピタキシャルウェーハの製造方法 |
JP2019523991A (ja) * | 2016-06-09 | 2019-08-29 | ジルトロニック アクチエンゲゼルシャフトSiltronic AG | 半導体ウェハを保持するためのサセプタ、半導体ウェハの表面上にエピタキシャル層を堆積する方法、およびエピタキシャル層を有する半導体ウェハ |
WO2020137171A1 (ja) * | 2018-12-27 | 2020-07-02 | 株式会社Sumco | 気相成長装置及びこれに用いられるキャリア |
JP2021034410A (ja) * | 2019-08-15 | 2021-03-01 | 信越半導体株式会社 | エピタキシャル成長用サセプタ、エピタキシャルウェーハの製造装置及びエピタキシャルウェーハの製造方法 |
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US10316412B2 (en) | 2012-04-18 | 2019-06-11 | Veeco Instruments Inc. | Wafter carrier for chemical vapor deposition systems |
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WO2014062002A1 (ko) | 2014-04-24 |
JP6092403B2 (ja) | 2017-03-08 |
US20150275395A1 (en) | 2015-10-01 |
DE112013005951T5 (de) | 2015-09-24 |
CN104756244A (zh) | 2015-07-01 |
KR20140049474A (ko) | 2014-04-25 |
KR101496572B1 (ko) | 2015-02-26 |
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