JP2015532611A5 - - Google Patents

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Publication number
JP2015532611A5
JP2015532611A5 JP2015523587A JP2015523587A JP2015532611A5 JP 2015532611 A5 JP2015532611 A5 JP 2015532611A5 JP 2015523587 A JP2015523587 A JP 2015523587A JP 2015523587 A JP2015523587 A JP 2015523587A JP 2015532611 A5 JP2015532611 A5 JP 2015532611A5
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Japan
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solution
alcohol
layer
colloidal
metal
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JP2015523587A
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Japanese (ja)
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JP2015532611A (ja
JP6312668B2 (ja
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Priority claimed from FR1257242A external-priority patent/FR2993792B1/fr
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JP2015523587A 2012-07-26 2013-07-04 非晶質粒子のコロイド溶液の調製方法 Active JP6312668B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR1257242A FR2993792B1 (fr) 2012-07-26 2012-07-26 Film de chalcogenure(s) metallique(s) cristallise(s) a gros grains, solution colloidale de particules amorphes et procedes de preparation.
FR1257242 2012-07-26
PCT/FR2013/051597 WO2014016489A2 (fr) 2012-07-26 2013-07-04 Film de chalcogenure(s) metallique(s) cristallise(s) a gros grains, solution colloïdale de particules amorphes et procedes de preparation

Related Child Applications (1)

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JP2018052441A Division JP6629374B2 (ja) 2012-07-26 2018-03-20 粗大粒結晶化金属カルコゲニド膜、非晶質粒子のコロイド溶液および調製方法

Publications (3)

Publication Number Publication Date
JP2015532611A JP2015532611A (ja) 2015-11-12
JP2015532611A5 true JP2015532611A5 (enExample) 2016-04-21
JP6312668B2 JP6312668B2 (ja) 2018-04-18

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ID=47501354

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JP2015523587A Active JP6312668B2 (ja) 2012-07-26 2013-07-04 非晶質粒子のコロイド溶液の調製方法
JP2018052441A Expired - Fee Related JP6629374B2 (ja) 2012-07-26 2018-03-20 粗大粒結晶化金属カルコゲニド膜、非晶質粒子のコロイド溶液および調製方法

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JP2018052441A Expired - Fee Related JP6629374B2 (ja) 2012-07-26 2018-03-20 粗大粒結晶化金属カルコゲニド膜、非晶質粒子のコロイド溶液および調製方法

Country Status (5)

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US (3) US9731262B2 (enExample)
EP (1) EP2877277B1 (enExample)
JP (2) JP6312668B2 (enExample)
FR (1) FR2993792B1 (enExample)
WO (1) WO2014016489A2 (enExample)

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CN104028285A (zh) * 2014-05-17 2014-09-10 北京工业大学 Cu2ZnSnS4/La2Ti2O7异质结光催化复合材料的制备方法
FR3022074B1 (fr) 2014-06-05 2018-02-16 Imra Europe Sas Procede de preparation de couche mince d'absorbeur a base de sulfure(s) et seleniures(s) de cuivre, zinc et etain, couche mince recuite et dispositif photovoltaique obtenus.
US10888836B2 (en) * 2014-07-25 2021-01-12 Chemical and Metal Technologies LLC Extraction of target materials using CZTS sorbent
US10730012B2 (en) * 2014-07-25 2020-08-04 Chemical and Metal Technologies LLC Extraction of target materials using CZTS sorbent
US10283357B2 (en) * 2014-12-01 2019-05-07 The University Of Chicago Compositionally matched molecular solders for semiconductors
US9825214B1 (en) * 2016-06-22 2017-11-21 Mainstream Engineering Corporation Films and the like produced from particles by processing with electron beams, and a method for production thereof
US11167262B2 (en) * 2017-09-29 2021-11-09 Korea Institute Of Science And Technology Amorphous nanostructure composed of inorganic polymer and method for manufacturing the same
WO2019066466A1 (ko) * 2017-09-29 2019-04-04 한국과학기술연구원 무기 고분자로 이루어진 비정질 나노구조체 및 그 제조방법
KR102432093B1 (ko) * 2017-10-20 2022-08-16 한국과학기술연구원 무기 고분자로 이루어진 비정질 나노구조체 및 그 제조방법
KR102458627B1 (ko) * 2018-08-21 2022-10-25 한국과학기술연구원 비정질 나노구조체를 이용하여 제조된 프랙탈 형상의 합금 나노구조체 및 그 제조방법
KR102407233B1 (ko) 2018-08-21 2022-06-10 한국과학기술연구원 지지체의 나노 사이즈 기공 내에 나노입자가 고르게 분산된 복합체 및 이의 제조방법
CN111474142B (zh) * 2020-05-21 2021-08-03 中南大学 一种利用近红外1550nm激光器检测微塑料浓度的方法
CN113321555A (zh) * 2021-07-05 2021-08-31 多农多收技术研究(江苏)有限公司 一种可以有效阻止粮食作物对土壤中镉吸收的药剂及方法
CN115108581B (zh) * 2022-07-05 2024-03-15 许昌学院 一种常温制备铜锌锡硫纳米晶的化学方法
CN115231608B (zh) * 2022-07-06 2024-03-15 许昌学院 一种常温制备多元硫化物纳米晶的化学方法
KR102671502B1 (ko) * 2022-11-28 2024-05-30 전남대학교산학협력단 이중 버퍼층을 구비하는 박막 태양전지 및 이의 제조방법
WO2024242138A1 (ja) * 2023-05-25 2024-11-28 カルコジェニック株式会社 SnS分散液及びその製造方法

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US6126740A (en) * 1995-09-29 2000-10-03 Midwest Research Institute Solution synthesis of mixed-metal chalcogenide nanoparticles and spray deposition of precursor films
JP2005032475A (ja) 2003-07-08 2005-02-03 Sharp Corp 有機色素を光増感剤とする半導体薄膜電極、それを用いた色素増感型光電変換素子および光電気化学太陽電池
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FR3001467B1 (fr) * 2013-01-29 2016-05-13 Imra Europe Sas Procede de preparation de couche mince d'absorbeur a base de sulfure(s) de cuivre, zinc et etain, couche mince recuite et dispositif photovoltaique obtenu

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