JP6312668B2 - 非晶質粒子のコロイド溶液の調製方法 - Google Patents

非晶質粒子のコロイド溶液の調製方法 Download PDF

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JP6312668B2
JP6312668B2 JP2015523587A JP2015523587A JP6312668B2 JP 6312668 B2 JP6312668 B2 JP 6312668B2 JP 2015523587 A JP2015523587 A JP 2015523587A JP 2015523587 A JP2015523587 A JP 2015523587A JP 6312668 B2 JP6312668 B2 JP 6312668B2
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solution
alcohol
metal
colloidal
colloid
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JP2015532611A5 (enExample
JP2015532611A (ja
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ボーデ、ステファン
ショーン、クリストフ
クッカロ、ヤン
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J13/00—Colloid chemistry, e.g. the production of colloidal materials or their solutions, not otherwise provided for; Making microcapsules or microballoons
    • B01J13/0004—Preparation of sols
    • B01J13/0008—Sols of inorganic materials in water
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
    • B01F23/00—Mixing according to the phases to be mixed, e.g. dispersing or emulsifying
    • B01F23/50—Mixing liquids with solids
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J13/00—Colloid chemistry, e.g. the production of colloidal materials or their solutions, not otherwise provided for; Making microcapsules or microballoons
    • B01J13/0004—Preparation of sols
    • B01J13/0008—Sols of inorganic materials in water
    • B01J13/0013—Sols of inorganic materials in water from a precipitate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J13/00—Colloid chemistry, e.g. the production of colloidal materials or their solutions, not otherwise provided for; Making microcapsules or microballoons
    • B01J13/0004—Preparation of sols
    • B01J13/0008—Sols of inorganic materials in water
    • B01J13/0017—Sols of inorganic materials in water by extraction of ions from aqueous solutions
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J13/00—Colloid chemistry, e.g. the production of colloidal materials or their solutions, not otherwise provided for; Making microcapsules or microballoons
    • B01J13/0004—Preparation of sols
    • B01J13/0026—Preparation of sols containing a liquid organic phase
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J13/00—Colloid chemistry, e.g. the production of colloidal materials or their solutions, not otherwise provided for; Making microcapsules or microballoons
    • B01J13/0004—Preparation of sols
    • B01J13/0039—Post treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/125—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/123—Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/128—Active materials comprising only Group I-II-IV-VI kesterite materials, e.g. Cu2ZnSnSe4 or Cu2ZnSnS4
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
    • H10F77/164—Polycrystalline semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/543—Solar cells from Group II-VI materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Dispersion Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Inorganic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Composite Materials (AREA)
  • Materials Engineering (AREA)
  • Photovoltaic Devices (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Colloid Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP2015523587A 2012-07-26 2013-07-04 非晶質粒子のコロイド溶液の調製方法 Active JP6312668B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR1257242A FR2993792B1 (fr) 2012-07-26 2012-07-26 Film de chalcogenure(s) metallique(s) cristallise(s) a gros grains, solution colloidale de particules amorphes et procedes de preparation.
FR1257242 2012-07-26
PCT/FR2013/051597 WO2014016489A2 (fr) 2012-07-26 2013-07-04 Film de chalcogenure(s) metallique(s) cristallise(s) a gros grains, solution colloïdale de particules amorphes et procedes de preparation

Related Child Applications (1)

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JP2018052441A Division JP6629374B2 (ja) 2012-07-26 2018-03-20 粗大粒結晶化金属カルコゲニド膜、非晶質粒子のコロイド溶液および調製方法

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JP2015532611A JP2015532611A (ja) 2015-11-12
JP2015532611A5 JP2015532611A5 (enExample) 2016-04-21
JP6312668B2 true JP6312668B2 (ja) 2018-04-18

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JP2015523587A Active JP6312668B2 (ja) 2012-07-26 2013-07-04 非晶質粒子のコロイド溶液の調製方法
JP2018052441A Expired - Fee Related JP6629374B2 (ja) 2012-07-26 2018-03-20 粗大粒結晶化金属カルコゲニド膜、非晶質粒子のコロイド溶液および調製方法

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US (3) US9731262B2 (enExample)
EP (1) EP2877277B1 (enExample)
JP (2) JP6312668B2 (enExample)
FR (1) FR2993792B1 (enExample)
WO (1) WO2014016489A2 (enExample)

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CN104028285A (zh) * 2014-05-17 2014-09-10 北京工业大学 Cu2ZnSnS4/La2Ti2O7异质结光催化复合材料的制备方法
FR3022074B1 (fr) 2014-06-05 2018-02-16 Imra Europe Sas Procede de preparation de couche mince d'absorbeur a base de sulfure(s) et seleniures(s) de cuivre, zinc et etain, couche mince recuite et dispositif photovoltaique obtenus.
US10888836B2 (en) * 2014-07-25 2021-01-12 Chemical and Metal Technologies LLC Extraction of target materials using CZTS sorbent
US10730012B2 (en) * 2014-07-25 2020-08-04 Chemical and Metal Technologies LLC Extraction of target materials using CZTS sorbent
US10283357B2 (en) * 2014-12-01 2019-05-07 The University Of Chicago Compositionally matched molecular solders for semiconductors
US9825214B1 (en) * 2016-06-22 2017-11-21 Mainstream Engineering Corporation Films and the like produced from particles by processing with electron beams, and a method for production thereof
US11167262B2 (en) * 2017-09-29 2021-11-09 Korea Institute Of Science And Technology Amorphous nanostructure composed of inorganic polymer and method for manufacturing the same
WO2019066466A1 (ko) * 2017-09-29 2019-04-04 한국과학기술연구원 무기 고분자로 이루어진 비정질 나노구조체 및 그 제조방법
KR102432093B1 (ko) * 2017-10-20 2022-08-16 한국과학기술연구원 무기 고분자로 이루어진 비정질 나노구조체 및 그 제조방법
KR102458627B1 (ko) * 2018-08-21 2022-10-25 한국과학기술연구원 비정질 나노구조체를 이용하여 제조된 프랙탈 형상의 합금 나노구조체 및 그 제조방법
KR102407233B1 (ko) 2018-08-21 2022-06-10 한국과학기술연구원 지지체의 나노 사이즈 기공 내에 나노입자가 고르게 분산된 복합체 및 이의 제조방법
CN111474142B (zh) * 2020-05-21 2021-08-03 中南大学 一种利用近红外1550nm激光器检测微塑料浓度的方法
CN113321555A (zh) * 2021-07-05 2021-08-31 多农多收技术研究(江苏)有限公司 一种可以有效阻止粮食作物对土壤中镉吸收的药剂及方法
CN115108581B (zh) * 2022-07-05 2024-03-15 许昌学院 一种常温制备铜锌锡硫纳米晶的化学方法
CN115231608B (zh) * 2022-07-06 2024-03-15 许昌学院 一种常温制备多元硫化物纳米晶的化学方法
KR102671502B1 (ko) * 2022-11-28 2024-05-30 전남대학교산학협력단 이중 버퍼층을 구비하는 박막 태양전지 및 이의 제조방법
WO2024242138A1 (ja) * 2023-05-25 2024-11-28 カルコジェニック株式会社 ＳｎＳ分散液及びその製造方法

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Also Published As

Publication number Publication date
US20170320037A1 (en) 2017-11-09
FR2993792B1 (fr) 2017-09-15
JP2018113471A (ja) 2018-07-19
US9731262B2 (en) 2017-08-15
EP2877277A2 (fr) 2015-06-03
JP2015532611A (ja) 2015-11-12
US20200215509A1 (en) 2020-07-09
WO2014016489A2 (fr) 2014-01-30
FR2993792A1 (fr) 2014-01-31
WO2014016489A3 (fr) 2014-09-12
US10632441B2 (en) 2020-04-28
US20150194548A1 (en) 2015-07-09
JP6629374B2 (ja) 2020-01-15
EP2877277B1 (fr) 2020-10-14

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