JP2015529009A - 物理的気相成長法による窒化アルミニウムの緩衝及び活性層 - Google Patents
物理的気相成長法による窒化アルミニウムの緩衝及び活性層 Download PDFInfo
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- JP2015529009A JP2015529009A JP2015520613A JP2015520613A JP2015529009A JP 2015529009 A JP2015529009 A JP 2015529009A JP 2015520613 A JP2015520613 A JP 2015520613A JP 2015520613 A JP2015520613 A JP 2015520613A JP 2015529009 A JP2015529009 A JP 2015529009A
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
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Abstract
Description
Claims (16)
- デバイスを製造するための方法であって:
第1の処理チャンバの中の1以上の基板のうちの1つの表面を処理すること;
前記第1の処理チャンバから、制御された環境の中にある第2の処理チャンバに、前記1以上の基板を移送すること;及び
処理領域を画定する1以上の壁を有する前記第2の処理チャンバの中の前記1以上の基板上に窒化アルミニウムの層を形成することを含み、前記窒化アルミニウムの層を形成することは:
前記処理領域と接触する表面を有するターゲットにバイアスをかけることであって、前記ターゲットはアルミニウムを含む、バイアスをかけること;
窒素を含む第1のガスを前記処理領域の中に流すこと;及び
第2のガスを前記処理領域の中に流すことであって、前記第2のガスはアルゴン、クリプトン、又はネオンを含む、前記処理領域の中に流すことを含み、かつ
前記ターゲットにバイアスをかけることは、前記1以上の基板上に前記窒化アルミニウムの層のN‐面成長を促進するように構成される、方法。 - 前記窒化アルミニウムの層を形成することはさらに、基板支持体の上に配置される前記1以上の基板上に電位を生成するために、電極にバイアスをかけることを含む、請求項1に記載の方法。
- 前記電極にバイアスをかけることは、前記ターゲットにバイアスをかける前に生じる第1の期間において前記電極にバイアスをかけることを含む、請求項2に記載の方法。
- 前記電極にバイアスをかけることは、前記1以上の基板上において、約−1000ボルトから約+500ボルトの間から変化する浮遊電位を生成することを含む、請求項2に記載の方法。
- 前記1以上の基板のうちの前記1つの表面を処理することは、前記1以上の基板を脱気すること、又は前記1以上の基板のうちの前記1つの表面をスパッタエッチングすることを含み、
前記ターゲットにバイアスをかけることは、約500ワットから約20キロワットの間の電力において、パルス状のDC信号又はRF信号を送ることを含み、かつ
前記電極にバイアスをかけることは、前記1以上の基板上において、約−1000ボルトから約+500ボルトの間から変化する浮遊電位を生成することを含み、かつ前記方法はさらに:
前記ターゲットにバイアスをかける前に、前記1以上の基板を摂氏約200度から摂氏約1000度の間の温度まで加熱すること;
前記ターゲットにバイアスをかけている間に、処理を伴って、約0.1ミリトールから200ミリトールの間で圧力を制御すること;及び
約0.2オングストローム/秒から約20オングストローム/秒の間の堆積速度において、AlN層を堆積することを含む、請求項2に記載の方法。 - 前記電極にバイアスをかけることは、前記ターゲットにバイアスをかけている間に、前記1以上の基板上に浮遊電位を生成することを含む、請求項2に記載の方法。
- 前記第2の処理チャンバから、第3の処理チャンバに、前記1以上の基板を移送すること;及び
前記第3の処理チャンバの中の前記窒化アルミニウムの層の上に、III族‐窒化物の層を形成することをさらに含み、前記III族‐窒化物の層を形成することは:
金属を含む前駆体及び窒素を含むガスを、前記1以上の基板の各々の表面に送ることを含む、請求項1に記載の方法。 - 前記III族‐窒化物の層は、AlN、InN、GaN、AlGaN、InGaN、又はInAlGaNを備える、請求項7に記載の方法。
- 前記ターゲットはさらに、アルミニウム、及びII族、IV族、又はVI族の要素を含む、請求項1に記載の方法。
- デバイスを製造するための方法であって:
第1の処理チャンバの中の1以上の基板のうちの1つの表面を処理すること;
前記第1の処理チャンバから、制御された環境の中にある第2の処理チャンバに、前記1以上の基板を移送すること;及び
処理領域を画定する1以上の壁を有する前記第2の処理チャンバの中の前記1以上の基板上に窒化アルミニウムの層を形成することを含み、前記窒化アルミニウムの層を形成することは:
前記処理領域と接触する表面を有するターゲットにバイアスをかけることであって、前記ターゲットはアルミニウムを含む、バイアスをかけること;
窒素を含む第1のガスを前記処理領域の中に流すこと;及び
第2のガスを前記処理領域の中に流すことであって、前記第2のガスはアルゴン、クリプトン、又はネオンを含む、前記処理領域の中に流すことを含み、かつ
前記ターゲットにバイアスをかけることは、前記1以上の基板上に前記窒化アルミニウムの層のAl‐面成長を促進するように構成される、方法。 - 前記窒化アルミニウムの層を形成することはさらに、基板支持体の上に配置される前記1以上の基板上に電位を生成するために、電極にバイアスをかけることを含む、請求項10に記載の方法。
- 前記電極にバイアスをかけることは、前記ターゲットにバイアスをかける前に生じる第1の期間において前記電極にバイアスをかけることを含む、請求項11に記載の方法。
- 前記電極にバイアスをかけることは、前記1以上の基板上において、約−1000ボルトから約+500ボルトの間から変化する浮遊電位を生成することを含む、請求項11に記載の方法。
- 前記1以上の基板のうちの前記1つの表面を処理することは、前記1以上の基板を脱気すること、又は前記1以上の基板のうちの前記1つの表面をスパッタエッチングすることを含み、
前記ターゲットにバイアスをかけることは、約500ワットから約20キロワットの間の電力において、パルス状のDC信号又はRF信号を送ることを含み、かつ
前記電極にバイアスをかけることは、前記1以上の基板上において、約−1000ボルトから約+500ボルトの間から変化する浮遊電位を生成することを含み、かつ前記方法はさらに、
前記ターゲットにバイアスをかける前に、前記1以上の基板を摂氏約200度から摂氏約1000度の間の温度まで加熱すること;
前記ターゲットにバイアスをかけている間に、処理を伴って、約0.1ミリトールから200ミリトールの間で圧力を制御すること;及び
約0.2オングストローム/秒から約20オングストローム/秒の間の堆積速度において、AlN層を堆積することを含む、請求項11に記載の方法。 - 前記第2の処理チャンバから、第3の処理チャンバに、前記1以上の基板を移送すること;及び
前記第3の処理チャンバの中の前記窒化アルミニウムの層の上に、III族‐窒化物の層を形成することを含み、前記III族‐窒化物の層を形成することは:
金属を含む前駆体及び窒素を含むガスを、前記1以上の基板の各々の表面に送ることを含む、請求項10に記載の方法。 - デバイスを形成するための装置であって:
アルミニウムを含むターゲット;
窒素を含むガス源;
アルゴン、クリプトン、及びネオンから成るグループから選ばれるガスを送るように適合されるプロセスガス源;
前記ターゲットに対して、約500ワットから約20キロワットの間の電力において、パルス状のDC信号又はRF信号を提供するように構成される第1の電源;
基板を支持する表面を有する基板支持体に結合される電極;及び
前記基板を支持する表面の上に配置される1以上の基板上に、約−1000ボルトから約+500ボルトの間の浮遊電位を生成するように構成される第2の電源を備える、第1の処理チャンバを備える、第1のクラスタを備える、装置。
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WO2014008162A1 (en) | 2014-01-09 |
US10109481B2 (en) | 2018-10-23 |
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KR102317822B1 (ko) | 2021-10-25 |
KR20200119918A (ko) | 2020-10-20 |
JP6272850B2 (ja) | 2018-01-31 |
US20150348773A1 (en) | 2015-12-03 |
CN107354428B (zh) | 2020-10-20 |
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