JP2015524619A - 増幅広域チューナブル短共振器レーザ - Google Patents

増幅広域チューナブル短共振器レーザ Download PDF

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JP2015524619A
JP2015524619A JP2015524490A JP2015524490A JP2015524619A JP 2015524619 A JP2015524619 A JP 2015524619A JP 2015524490 A JP2015524490 A JP 2015524490A JP 2015524490 A JP2015524490 A JP 2015524490A JP 2015524619 A JP2015524619 A JP 2015524619A
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tunable
amplification
input
tunable laser
laser source
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JP2015524619A5 (enExample
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ケーブル、アレックス、エズラ
ジャヤラマン、ヴィジャイシェカー
ポッドセッド、ベンジャミン、ミッシェル
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ソルラブス、インコーポレイテッド
プラエビウム リサーチ、インコーポレイテッド
プラエビウム リサーチ、インコーポレイテッド
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    • HELECTRICITY
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    • H01S5/00Semiconductor lasers
    • H01S5/06Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
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    • H01S5/0683Stabilisation of laser output parameters by monitoring the optical output parameters
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    • H01S3/10007Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating in optical amplifiers
    • H01S3/10015Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating in optical amplifiers by monitoring or controlling, e.g. attenuating, the input signal
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    • H01S3/105Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the mutual position or the reflecting properties of the reflectors of the cavity, e.g. by controlling the cavity length
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    • H01S3/10Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/13Stabilisation of laser output parameters, e.g. frequency or amplitude
    • H01S3/139Stabilisation of laser output parameters, e.g. frequency or amplitude by controlling the mutual position or the reflecting properties of the reflectors of the cavity, e.g. by controlling the cavity length
    • H01S3/1396Stabilisation of laser output parameters, e.g. frequency or amplitude by controlling the mutual position or the reflecting properties of the reflectors of the cavity, e.g. by controlling the cavity length by using two modes present, e.g. Zeeman splitting
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    • H01S5/183Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
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    • H01S5/34Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
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    • H01S5/343Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34306Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000nm, e.g. InP based 1300 and 1500nm lasers
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    • H01S5/343Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34313Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
    • GPHYSICS
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    • G01N21/25Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
    • G01N21/31Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
    • G01N21/39Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using tunable lasers
    • G01N2021/396Type of laser source
    • G01N2021/399Diode laser
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  • Physics & Mathematics (AREA)
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  • Semiconductor Lasers (AREA)
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  • Radiology & Medical Imaging (AREA)
  • Lasers (AREA)
  • Mechanical Light Control Or Optical Switches (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
  • Optical Integrated Circuits (AREA)
JP2015524490A 2012-07-27 2013-07-26 増幅広域チューナブル短共振器レーザ Pending JP2015524619A (ja)

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US201261676712P 2012-07-27 2012-07-27
US61/676,712 2012-07-27
PCT/US2013/052411 WO2014018939A2 (en) 2012-07-27 2013-07-26 Amplified widely tunable short cavity laser

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JP2015524619A true JP2015524619A (ja) 2015-08-24
JP2015524619A5 JP2015524619A5 (enExample) 2016-09-08

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JP2015524494A Expired - Fee Related JP6328112B2 (ja) 2012-07-27 2013-07-26 Memsチューナブル短共振器レーザ
JP2015524495A Expired - Fee Related JP6297557B2 (ja) 2012-07-27 2013-07-26 量子井戸チューナブル短共振器レーザ
JP2015524493A Expired - Fee Related JP6419696B2 (ja) 2012-07-27 2013-07-26 チューナブル短共振器レーザ感知器
JP2015524491A Pending JP2015523736A (ja) 2012-07-27 2013-07-26 偏波安定広域チューナブル短共振器レーザ

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