JP2015523917A - シリコンオキシカーバイド層を含む複合材料、及び複合材料を形成する方法 - Google Patents
シリコンオキシカーバイド層を含む複合材料、及び複合材料を形成する方法 Download PDFInfo
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- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
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- C09D179/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/453—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating passing the reaction gases through burners or torches, e.g. atmospheric pressure CVD
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
- Y10T428/263—Coating layer not in excess of 5 mils thick or equivalent
- Y10T428/264—Up to 3 mils
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Abstract
Description
本出願は、2012年4月30日に出願された米国仮特許出願第61/640,293号の利益を主張するものであり、この仮特許出願の内容全体が、本明細書において参照されることにより本明細書に組み込まれる。
Claims (31)
- ポリマー基板と、そして熱酸化バリア皮膜と、を備え、該熱酸化バリア皮膜は、約100〜約900nmの厚さを有し、かつ前記ポリマー基板の少なくとも1つの表面を被覆するシリコンオキシカーバイド(SOC)層を含む、複合材料。
- 前記SOC層は、大気プラズマ堆積により形成される、請求項1に記載の複合材料。
- 前記SOC層は、約3%〜約50%の範囲の炭素含有量を含む、請求項2に記載の複合材料。
- 前記SOC層は、約3%〜約50%の範囲のシリコン含有量を含む、請求項2に記載の複合材料。
- 前記SOC層は、約3%〜約50%の範囲の酸素含有量を含む、請求項2に記載の複合材料。
- 前記SOC層は、前記ポリマー基板への酸素拡散を低減する、請求項2に記載の複合材料。
- 前記複合材料は、同じ前記ポリマー基板を備え、かつ前記SOC層を含まない複合材料と比較して、約5.0%未満の重量減少の熱酸化安定性(TOS)を有する、請求項6に記載の複合材料。
- 前記複合材料は、同じ前記ポリマー基板を備え、かつ前記SOC層を含まない複合材料と比較して、約2.0%未満の重量減少の熱酸化安定性(TOS)を有する、請求項6に記載の複合材料。
- 前記ポリマー基板は、ポリイミド、エポキシ、ビスマレイミド、及びシアン酸エステルから選択されるポリマーマトリックスを含む、請求項2に記載の複合材料。
- 前記ポリマー基板はポリイミドマトリックスを含む、請求項2に記載の複合材料。
- (i)ポリマー基板と;(ii)約100〜約900nmの厚さを有し、かつ前記ポリマー基板の少なくとも1つの表面を被覆するシリコンオキシカーバイド(SOC)層を含む接着促進層と;そして(iii)前記接着促進層の上に堆積し、かつ前記接着促進層の略全体を覆う酸素バリア層(OBL)と、を備える、複合材料。
- 前記SOC層は、大気プラズマ堆積により形成される、請求項11に記載の複合材料。
- 前記SOC層は、約3%〜約30%の範囲の炭素含有量;約10%〜約50%の範囲のシリコン含有量;及び約10%〜約50%の範囲の酸素含有量を含む、請求項11に記載の複合材料。
- 前記OBLは、前記ポリマー基板への酸素拡散を低減し、前記OBLは、金属材料、セラミック材料、または金属材料及びセラミック材料の組み合わせを含む、請求項11又は12に記載の複合材料。
- 前記接着促進層は、同じ前記ポリマー基板の上に直接堆積する同じ前記OBLの接合強度と比較して、前記ポリマー基板に対する前記OBLの接合強度を向上させる、請求項11又は12に記載の複合材料。
- 前記複合材料は、前記ポリマー基板と前記SOC層との間の第1接合強度、及び前記SOC層と前記OBLとの間の第2接合強度を有し、前記第1接合強度及び前記第2接合強度はそれぞれ、同じ前記OBLと同じ前記ポリマー基板との直接間の比較強度のものよりも大きい、請求項15に記載の複合材料。
- 前記複合材料は、約2.0%未満重量減少の熱酸化安定性(TOS)を有する、請求項11又は12に記載の複合材料。
- 前記ポリマー基板は、ポリイミド、エポキシ、ビスマレイミド、及びシアン酸エステルから選択されるポリマーマトリックスを含む、請求項11又は12に記載の複合材料。
- 前記ポリマー基板はポリイミドマトリックスを含む、請求項11又は12に記載の複合材料。
- 複合材料を形成する方法であって、前記方法は:約100〜約900nmの厚さを有するシリコンオキシカーバイド(SOC)層を含む熱酸化バリア皮膜を、ポリマー基板の少なくとも1つの表面に堆積させる工程を含む、方法。
- 前記堆積させる工程は、前記SOC層の、大気プラズマ堆積(APDP)による堆積を含む、請求項20に記載の方法。
- 前記APDPは、前記SOC層の化学前駆体の使用を含み、該化学前駆体は、シラン、有機シラン、またはシラン及び有機シランの組み合わせを含む、請求項21に記載の方法。
- 前記APDPは、前記SOC層の化学前駆体の使用を含み、該化学前駆体は、テトラメチルシクロテトラシロキサン、オクタメチルシクロテトラシロキサン、またはテトラメチルシクロテトラシロキサン及びオクタメチルシクロテトラシロキサンの組み合わせを含む、請求項21に記載の方法。
- 前記SOC層は、前記ポリマー基板への酸素拡散を阻止する、請求項20又は21に記載の方法。
- 前記複合材料は、同じ前記ポリマー基板を備え、かつ前記SOC層を含まない複合材料と比較して、約2.0%未満の重量減少の熱酸化安定性(TOS)を有する、請求項24に記載の方法。
- 複合材料を形成する方法であって、前記方法は:(i)約100〜約900nmの厚さを有するシリコンオキシカーバイド(SOC)層を含む接着促進層を、ポリマー基板の少なくとも1つの表面に堆積させる工程と;そして(ii)酸素バリア層(OBL)を、前記接着促進層の略全体を覆うように堆積させる工程とを含む、方法。
- 前記SOC層を堆積させる工程は、前記SOC層の、大気プラズマ堆積(APDP)による堆積を含む、請求項26に記載の方法。
- 前記APDPは、前記SOC層の化学前駆体の使用を含み、該化学前駆体は、シラン、有機シラン、またはシラン及び有機シランの組み合わせを含む、請求項27に記載の方法。
- 前記APDPは、前記SOC層の化学前駆体の使用を含み、該化学前駆体は、テトラメチルシクロテトラシロキサン、オクタメチルシクロテトラシロキサン、またはテトラメチルシクロテトラシロキサン及びオクタメチルシクロテトラシロキサンの組み合わせを含む、請求項27に記載の方法。
- 前記OBLは、前記ポリマー基板への酸素拡散を低減し、前記OBLは、金属材料、セラミック材料、または金属材料及びセラミック材料の組み合わせを含む、請求項26又は27に記載の方法。
- 前記接着促進層は、同じ前記ポリマー基板の上に直接堆積する同じ前記OBLの接合強度と比較して、前記ポリマー基板に対する前記OBLの接合強度を向上させる、請求項26又は27に記載の方法。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
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US201261640293P | 2012-04-30 | 2012-04-30 | |
US61/640,293 | 2012-04-30 | ||
US13/833,686 US10787591B2 (en) | 2012-04-30 | 2013-03-15 | Composites including silicon-oxy-carbide layers and methods of making the same |
US13/833,686 | 2013-03-15 | ||
PCT/US2013/034435 WO2014007894A2 (en) | 2012-04-30 | 2013-03-28 | Composites including silicon-oxy-carbide layers and methods of making the same |
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JP2018159930A Division JP2019022984A (ja) | 2012-04-30 | 2018-08-29 | シリコンオキシカーバイド層を含む複合材料、及び複合材料を形成する方法 |
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JP2015523917A5 JP2015523917A5 (ja) | 2016-05-19 |
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JP2018159930A Pending JP2019022984A (ja) | 2012-04-30 | 2018-08-29 | シリコンオキシカーバイド層を含む複合材料、及び複合材料を形成する方法 |
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EP (2) | EP2844783B1 (ja) |
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AU (1) | AU2013287214B2 (ja) |
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JP2017201692A (ja) * | 2016-05-06 | 2017-11-09 | エーエスエム アイピー ホールディング ビー.ブイ. | SiOC薄膜の形成 |
US10991573B2 (en) | 2017-12-04 | 2021-04-27 | Asm Ip Holding B.V. | Uniform deposition of SiOC on dielectric and metal surfaces |
US11107673B2 (en) | 2015-11-12 | 2021-08-31 | Asm Ip Holding B.V. | Formation of SiOCN thin films |
US11158500B2 (en) | 2017-05-05 | 2021-10-26 | Asm Ip Holding B.V. | Plasma enhanced deposition processes for controlled formation of oxygen containing thin films |
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US10847529B2 (en) | 2017-04-13 | 2020-11-24 | Asm Ip Holding B.V. | Substrate processing method and device manufactured by the same |
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US10787591B2 (en) | 2020-09-29 |
JP2019022984A (ja) | 2019-02-14 |
EP2844783A2 (en) | 2015-03-11 |
AU2013287214B2 (en) | 2016-04-14 |
WO2014007894A2 (en) | 2014-01-09 |
EP3428311B1 (en) | 2022-05-04 |
WO2014007894A3 (en) | 2014-03-20 |
EP3428311A1 (en) | 2019-01-16 |
AU2013287214A1 (en) | 2014-08-28 |
EP2844783B1 (en) | 2018-08-15 |
JP6421114B2 (ja) | 2018-11-07 |
US20130288044A1 (en) | 2013-10-31 |
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